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ABSTRACT junctions [1], [2] and one conductive island [3]. If the
Single Electron Transistor (SET) is an advanced charging energy associated with adding the electrons to the
technology for future low power VLSI devices. SET has island is overcome then only electrons can tunnel onto the
high integration density and a low power consumption island [4].
device. While building logic circuits that comprise only of
SETs, it is observed that the gate voltage at the input must 1.1.1 Orthodox Theory
be higher than the power supply of SET for better The ‘Orthodox’ theory of single-electron tunneling,
switching characteristics. This limitation of SET in the describes an important charging effect such as Coulomb
power and gate supply voltages makes it practically blockade and Coulomb oscillation [5]. Later this theory
inappropriate to build circuits. An approach to overcome revised by Likharev [6]. The orthodox theory makes the
this problem, hybridization of SET and CMOS transistor is following approximations:
implemented. In this paper, different types of hybrid SET-
MOS circuits are designed such as inverter and NAND gate 1. The quantization of electronic energy inside the
and by using above two circuits, 2:4 hybrid SET-MOS conductors is ignored, i.e. the electron energy
decoder is designed and implemented. All the circuits are spectrum is treated as continuous.
verified by means of PSpice simulation software version
16.5. 2. Time for electron tunneling through the barrier is
Keywords: Single Electron Transistor (SET), CMOS, assumed to be negligibly small (Tt ~ 10-15 s) in
Coulomb Blockade, Orthodox Theory, Hybrid SET-MOS, comparison with other time scales (including the
Decoder, Pspice interval between neighboring tunneling events).
Tunnel Tunnel
Source barrier barrier Drain
e e
island
(a)
Tunnel Tunnel
barrier barrier
Potential
energy
island island drain
x
(b)
Fig. 1: The single-island, double tunnel junction system (a) Schematic diagram, (b) The potential energy across the system, at
zero bias
VGS
Gate
Island CG
Source Drain
CS VDS CD IDS
where h is Planck’s constant and RQ is the quantum Fig. 3: The basic circuit of the basic inverter
resistance.
M1
𝐹 = ̅̅̅̅̅
𝐴. 𝐵
VG1
Fig. 7: Output waveform of SET-CMOS inverter
A
CG1 CG2
VDD
VG1 M2
B M1
CG1 CG2
A VOUT
Fig. 5: 2-Input NAND gate using SET and NMOS pull-up VDD B
stage CG1 CG2
VD VDD
D CG2 CG1
M1
Fig. 8: Proposed circuit diagram of hybrid SET-CMOS
VOUT NAND gate
VI
N
VD CL
D
CG1 CG2
VDD
VDD D9
CG1 CG2 VDD
CG1 CG2
VDD VDD
CG2 CG1
VDD
V1
VDD VDD
CG1 CG2
VDD D10
CG1 CG2 VDD
CG1 CG2
VDD
VDD
CG2 CG1
VDD
V3
VDD VDD
CG1 CG2
VDD D11
CG1 CG2 VDD
CG1 CG2
VDD
CG2 CG1
VDD
VDD
VDD D12
CG1 CG2 VDD
CG1 CG2
VDD
CG2 CG1