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1) Reading Assignment
Streetman: Section of Streetman Chap 8 on MOS
METAL SEMICONDUCTOR
Eo Vacuum
energy level
Eo
Work function
= q
q EC
Ef
Ef
EV
qM is determined qS is determined
by the metal material by the semiconductor material,
the dopant type,
and doping concentration
Professor N Cheung, U.C. Berkeley 3
EE143 F2010 Lecture 22
Eo Eo Eo
semiconductor
M O Si (p-Si)
holes
Charge Distribution
Thickness of accumulation layer ~0
• VSi = Vox = 0
M O S (p-Si)
Charge Distribution
M O S (p-Si)
Depletion
2Si VSi
Layer xd xd
thickness
qN B
qNB
2
qN Bx d qN Bx d
VG VFB Depletion layer
Cox 2s
Note: NBxd is the total (For given VG, can solve for xd)
charge in Si /unit area Vox VSi
Professor N Cheung, U.C. Berkeley 10
EE143 F2010 Lecture 22
- Q'
x=0 x=xo x=0 x=xo x=0 x=xo
=
x=xo + x
x
x=x + x
x
+ x
o d x=x + x
d o d
xdmax
qNB
Q’n
2 s ( 2 F )qN B
VG VT VFB 2 F
C ox
Professor N Cheung, U.C. Berkeley 12
EE143 F2010 Lecture 22
xdmax
qNa
qN B xd max Qn
Vox
C ox Q’n
Qn C ox (VG VT ) electrons
p-Si
Vox =qNaxd/Cox
Vox = [qNaxdmax+Qn]/Cox
VSi = qNaxdmax2/(2s)
Inversion = 2|F|
* For simplicity, dielectric constants assumed to be same for oxide and Si in E-field sketches
Professor N Cheung, U.C. Berkeley 17
EE143 F2010 Lecture 22
Suggested Exercise
C-V Characteristic
C/Cox C/Cox
a e e a
1 1
b b
p-type n-type
substrate c substrate
c
d d
VG VG
VT VT
a) accumulation: Cox
b) flatband: ~Cox (actually a bit less)
c) depletion: Cox in series with the Cdepl
d) threshold: Cox in series with the minimum Cdepl
e) inversion: Cox (with some time delay!)
Professor N Cheung, U.C. Berkeley 25
EE143 F2010 Lecture 22
Q
Q
All frequencies
Accumulation
C = Cox
Q
Q All frequencies
Depletion
1/C = 1/Cox + xd/s
Q Q Q
Q
Inversion
VG
VC
M
O
inversion
electrons n+
n+
depletion
region p-Si
VB
2 s
VSi 2 p VC VB
2
VG VB VFB qN a X d max 1 qN a X d max
C OX 2 s
Professor N Cheung, U.C. Berkeley 28
EE143 F2010 Lecture 22
At threshold: VG – VB = VFB+Vox+VSi
But VSi = 2|p| + (VC - VB ) =>
xdmax is different from no-bias case
2 SiVSi
xd max
qN B
2sqNB(2|F| + VC-VB)
VT -VB = VFB + + 2|F| + VC - VB
Cox
Vox VSi
Professor N Cheung, U.C. Berkeley 29
EE143 F2010 Lecture 22
1 x ox ( x)
xox
Qf
VFB M S
Cox Cox 0 xox
dx
ox (x)
Qf
S
ox (x) due to alkaline
M O
contaminants or trapped
x=0 x = xox charge
Qf due to broken bonds
at
Professor N Cheung, U.C. Berkeley 30
EE143 F2010 Lecture 22
Qi
VT
COX
SiO2 xdmax
Na
Qd
p-Si
Qn
Doping Profile After Implantation
Qd (due to implanted acceptors)
1 M
6 OX & Q f
2 xox
Qn VC
n+ n+
Na 5
3
4 VB
M increases
|VCB| increases
B threshold implant
Xox increases
Xox increases
As or P threshold implant
|VCB| increases
+ Qf or Qox M decreases
2sqNB(2|F| + |VC-VB|) Qi
VT = VFB - - 2|F| + VC -
Cox Cox
* Yes, + sign for VC term but VC (<0) is a negative bias for PMOS because the
inversion holes have to be negatively biased with respect to the n-substrate
to create a reverse biased pn junction.