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Abstract: This study proposes new third-order quadrature oscillator that provides several voltage and current
outputs simultaneously. The circuit uses differential voltage current conveyors and grounded components,
enjoys non-interactive frequency control and can be made resistor-less by using voltage-controlled differential
voltage current conveyors. Non-ideal study and parasitic effects are also considered and their effects are
discussed. The proposed theory is verified through PSPICE by good results.
IET Circuits Devices Syst., 2009, Vol. 3, Iss. 4, pp. 153– 160 153
doi: 10.1049/iet-cds.2009.0072 & The Institution of Engineering and Technology 2009
www.ietdl.org
3 Proposed circuit The new quadrature oscillator based on DVCC uses the
The DVCC symbol and its CMOS implementation are same scheme as recently reported for third-order oscillator
[9]. It employs a new DVCC-based low-pass biquad filter
shown in Fig. 1; the same is characterised by the following
port relationship and the well-known inverting integrator, realised using
DVCC in closed loop. The resulting circuit is shown in
Fig. 2. Here, B/A realises the low-pass biquad filter function
Vx ¼ Vy1 Vy2 ; Iy1 ¼ Iy2 ¼ 0; Iz þ ¼ Ix ; Iz ¼ Ix
whereas; C/B realises the inverting integrator function.
(1) With closed loop, C ¼ A, and the system characteristic
154 IET Circuits Devices Syst., 2009, Vol. 3, Iss. 4, pp. 153– 160
& The Institution of Engineering and Technology 2009 doi: 10.1049/iet-cds.2009.0072
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It is evident from (4) that in all seven outputs are 4 Parasitics’ study
obtained. Two quadrature voltages in the form of V4 and The effect of DVCC parasitics on the performance of new
V5 and three quadrature outputs with a progressive phase quadrature oscillator is considered. The various ports of
shift of 908, in the form of V1 , V2 and V3 are obtained. It DVCC are characterised by parasitic capacitances. These
is quite worth noting that the voltage outputs unlike the can be denoted as CY1,2 , CX and CZ for various ports;
available current outputs do not appear at appropriate suffices referring to the respective port. In the proposed
(low) impedance level. The two current outputs are circuit topology, external capacitors are connected at either
available at desired high impedance level and also exhibit Y or Z terminals; moreover a number of Y and Z terminals
a quadrature relationship. The various outputs generated are connected together in many cases. Therefore the
have their relative amplitudes, decided by k1 – 3 . By parasitic capacitances at these ports actually merge with the
designing the circuits for ‘k1 – 3 ¼ 1’, all the outputs would external capacitors by way of appearing in shunt with them.
posses equal amplitudes. The effective values of the capacitors thus become
IET Circuits Devices Syst., 2009, Vol. 3, Iss. 4, pp. 153– 160 155
doi: 10.1049/iet-cds.2009.0072 & The Institution of Engineering and Technology 2009
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depending on the technology, their effects would be open circuited as a good approximation. As far as
negligible, as the external capacitors used in the design are Z-terminal resistance (Rz) is concerned, it depends on the
expected to be larger in comparison to the parasitic ones. It output resistance (shunt combination) of the two MOS
is further to be noted that the X terminal parasitic transistors, forming the output stage (for instance, M8 and
capacitances do affect the circuit’s performance, but is not M12 for Zþ stage). This in turn is bias current dependent
to be seen as a drawback as most of the current conveyors besides being also a function of channel length modulation
based circuits actually are based on the use of resistors at X (1/l ) parameter. The inclusion of Rz , which is in order of
terminals. Such a topology is so popular because of the 100s of kV, results in deviations in the characteristic
advantage of terminating X terminals with resistors. The equation of the oscillator circuit. However, for real device
intrinsic X-terminal resistance (low for second-generation simulations, these effects are very much a part and parcel of
current conveyors; DVCC falls in the same category) the simulated circuit. The discrepancy and errors are to be
merges with external resistors in all such topologies. given in the section presenting the results.
Actually, this feature is further utilised to derive active-C
networks by getting rid of resistors; these circuits benefit
from resistor-less realisation with the added advantage of 5 Non-ideal analysis
electronic tuning [7, 9, 10]. Coming back to the proposed A practical DVCC like any other active element can be
circuit, X-terminal resistance (Rx) merger with external characterised by non-ideal transfer gains. Thus the defining
ones increases the effective value of external resistors equation for DVCC gets modified to
(R i0 ¼ Ri þ Rx; i ¼ 1 – 3). As a result of the effective
capacitances and effective resistances, a certain discrepancy Vx ¼ b1 Vy1 b2 Vy2 ; Iy1 ¼ Iy2 ¼ 0; Izþ ¼ a1 Ix ;
would be expected in the simulated FO from the designed
value. The discrepancy will theoretically yield the actual Iz ¼ a2 Ix (7)
FO, in deficit to the designed value. Now taking the
above-discussed parasitics, the modified expressions for FO The voltage transfer gains b1 from Y1 to X, and b2 from Y2 to
and CO are given as X deviate from unity by voltage transfer errors. Similarly, the
current transfer gains a1 (from X to Zþ) and a2 (from X to
1 Z2) deviate from unity by the current transfer errors. These
FO : fo ¼ pffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffiffi ; CO : R20 C10 ¼ R30 C30 (6)
2p R10 R30 C20 C30 errors are expected to be quite low for an integrated DVCC,
thus making voltage and current transfer gains to approach
In (6) the effective capacitors and resistors are the ones as
given in (5) and discussed above, respectively. Table 3 Device dimensions used in simulation
It may be pointed out here that a second-generation Transistors L, mm W, mm
current conveyor (DVCC is its differential input version) is
M1, M2, M3, M4 1 1.6
characterised by port Y and port Z parasitic resistances, Ry
and Rz , respectively. Since, Y is the voltage input terminal, M5, M6 1 8
it offers high input resistance (Ry); similarly, Z is the
M9, M10 1 29
output current terminal and shows high output resistance
(Rz). For the present case, where DVCC is used, Y M7, M8, M13, M14, M15 1 20
terminals are the gates of the MOS transistors, and hence
M11, M12, M16, M17, M18 1 90
show an extremely high input impedance to be considered
NMOS
LEVEL ¼ 3, UO ¼ 460.5, TOX ¼ 1.0 1028 TPG ¼ 1, VTO ¼ 0.62, JS ¼ 1.8 1026, XJ ¼ 0.15 1026, RS ¼ 417,
RSH ¼ 2.73, LD ¼ 0.04 1026, ETA ¼ 0, VMAX ¼ 130 103, NSUB ¼ 1.71 1017, PB ¼ 0.761, PHI ¼ 0.905,
THETA ¼ 0.129, GAMMA ¼ 0.69, KAPPA ¼ 0.1, AF ¼ 1, WD ¼ 0.11 1026, CJ ¼ 76.4 1025, MJ ¼ 0.357,
CJSW ¼ 5.68 10210, MJSW ¼ 0.302, CGSO ¼ 1.38 10210, CGDO ¼ 1.38 10210, CGBO ¼ 3.45 10210,
KF ¼ 3.07 10228, DELTA ¼ 0.42, NFS ¼ 1.2 1011
PMOS
LEVEL ¼ 3, UO ¼ 100, TOX ¼ 1.0 1028, TPG ¼ 1, VTO ¼ 20.58, JS ¼ 0.38 1026, XJ ¼ 0.1 1026, RS ¼ 866,
RSH ¼ 1.81, LD ¼ 0.03 1026, ETA ¼ 0, VMAX ¼ 113 103, NSUB ¼ 2.08 1017, PB ¼ 0.991, PHI ¼ 0.905,
THETA ¼ 0.120, GAMMA ¼ 0.76, KAPPA ¼ 2, AF ¼ 1, WD ¼ 0.14 1026, CJ ¼ 85 1025, MJ ¼ 0.429,
CJSW ¼ 4.67 10210, MJSW ¼ 0.631, CGSO ¼ 1.38 10210, CGDO ¼ 1.38 10210, CGBO ¼ 3.45 10210,
KF ¼ 1.08 10229, DELTA ¼ 0.81, NFS ¼ 0.52 1011
156 IET Circuits Devices Syst., 2009, Vol. 3, Iss. 4, pp. 153– 160
& The Institution of Engineering and Technology 2009 doi: 10.1049/iet-cds.2009.0072
www.ietdl.org
unity at working frequencies. However, as frequently circuit is analysed and found to modify the characteristic
emphasised in literature these gains are frequency equation.
dependent with a first-order roll-off at high frequency. It
has been confirmed that their values remain unity up to
100 MHz for the parameters to be used in this work a12 b22 2 a11 b12 b21 a a b b b
s3 þ s þ s þ 11 13 11 12 23 ¼ 0 ð8Þ
(Tables 1 and 2). However, their effect on the proposed R2 C1 R 1 R 2 C1 C2 R1 R2 R3 C1 C2 C3
IET Circuits Devices Syst., 2009, Vol. 3, Iss. 4, pp. 153– 160 157
doi: 10.1049/iet-cds.2009.0072 & The Institution of Engineering and Technology 2009
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1 1
FO FO (10)
SR1,R3,C2,C3 ¼ ; Sa11,a13,a12,b11,b12,b23,b22 ¼
2 2
Equation (10) shows that the sensitivity figures are within 0.5
Figure 7 Phase error (between V1 and V2) as a function of FO
in magnitude, ensuring good sensitivity performance.
6 Simulation results
The proposed third-order quadrature oscillator was next
simulated using PSPICE, an industry standard tool for
evaluating the performance of circuits. The DVCC
implementation of Fig. 1 was used with MIETEC 0.5 m
CMOS parameters and aspect ratio as listed in Tables 2
and 3. The circuit was designed using equal capacitors of
value 100 pF, R1 ¼ R3 ¼ 2 kV and R2 ¼ 1.8 kV (to obtain
sustained oscillations). The theoretical FO using this
design was 796 kHz. The simulated FO was found to be
795 kHz, which is very close to the theoretical value and
only 0.1% in error. The results for the five voltage outputs
and two current outputs are shown in Fig. 4. The Fourier
spectrum of the outputs of Fig. 4 are shown in Fig. 5, each
output enjoying a total harmonic distortion (THD) of less
than 1%. A low THD along with good accuracy of the FO
is a justifying feature for the third-order oscillator [7]. To
further support the circuit’s practical utility, R1 was varied Figure 8 X–Y plot showing quadrature current property
so as to vary the FO. The FO tuning through R1 is shown
in Fig. 6. Both theoretical and simulated FO is found to outputs, namely, V1 and V2 was further measured through
closely match; the discrepancy (deficit) in simulated simulations (output file of Fourier analysis) and the error
frequency being the result of various parasitics discussed in calculated. The results are shown in Fig. 7, which show
Sections 4 and 5. The phase of two of the quadrature little phase error (deviation from 90º phase shift). The
158 IET Circuits Devices Syst., 2009, Vol. 3, Iss. 4, pp. 153– 160
& The Institution of Engineering and Technology 2009 doi: 10.1049/iet-cds.2009.0072
www.ietdl.org
quadrature relationship is further verified through the X – Y [8] GUPTA S.S., SENANI R.: ‘Realization of current mode SRCOs
plot (circle) of the two current outputs as shown in Fig. 8. using all grounded passive elements’, Frequenz, 2003, 57,
pp. 26– 37
7 Conclusion [9] MAHESHWARI S., KHAN I.A.: ‘Current controlled third order
quadrature oscillator’, IEE Proc. Circuits Devices Syst.,
A new third-order quadrature oscillator circuit based on 2005, 152, pp. 605– 607
DVCC and grounded passive component is presented. The
circuit provides a number of quadrature voltages and [10] KESKIN A.U., BIOLEK D.: ‘Current mode quadrature oscillator
current outputs. Frequency of the oscillator can be varied using current differencing transconductance amplifier’, IEE
independent of (without affecting) the CO. Non-ideality Proc. Circuits Devices Syst., 2006, 153, pp. 214–218
aspects and parasitic effects are also studied. Another new
resistor-less circuit can be derived from the proposed [11] GUPTA S.S., SENANI R.: ‘Grounded capacitor SRCOs using a
oscillator, with the added advantage of limited electronic single differential difference complementary current
control. The proposed circuit is verified through PSPICE feedback amplifier’, IEE Proc. Circuits Devices Syst., 2005,
simulations with promising results. The active-C oscillator 152, pp. 38– 48
derived from the proposed active-RC oscillator is a topic of
further investigation using voltage-controlled DVCC with [12] MAHESHWARI S., KHAN I.A.: ‘Novel voltage/current mode
better Rx linearity. translinear-C quadrature oscillator’, J. Active Passive
Electron. Devices, 2007, 2, pp. 235 – 239
IET Circuits Devices Syst., 2009, Vol. 3, Iss. 4, pp. 153– 160 159
doi: 10.1049/iet-cds.2009.0072 & The Institution of Engineering and Technology 2009
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[23] KUMAR V., KESKIN A.U., PAL K.: ‘DVCC based single element [25] KUMNGERN M., DEJHAN K.: ‘DDCC based quadrature
controlled oscillators using all grounded components and oscillators with grounded capacitors and resistors’, Active
simultaneous current voltage mode outputs’, Frequenz., Passive Electron. Compon., 2009, doi: 10.1155/2009/
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[24] MAHESHWARI S.: ‘A canonical voltage controlled VM-APS [26] MAHESHWARI S.: ‘High output impedance current-mode
with a grounded capacitor’, Circuits Syst. Signal Process., all-pass sections with two grounded passive components’,
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160 IET Circuits Devices Syst., 2009, Vol. 3, Iss. 4, pp. 153– 160
& The Institution of Engineering and Technology 2009 doi: 10.1049/iet-cds.2009.0072