Date:

I. 3. INPUT AND OUTPUT CHARACTERISTICS OF TRANSISTOR IN

COMMON BASE CONFIGURATION
OBJECTIVES:
1. To Plot Input and Output Static Characteristics of a given Transistor in C.B Configuration.
2. To Calculate the Dynamic I/P Impedance, Dynamic O/P Impedance, αdc & αac of Transistor.

APPARATUS REQUIRED:
1. Bread board – 1No
2. Transistor (BC107) - 1No.
3. Resistors 1k Ω – 2 No
4. Digital Multimeters – 2No.s
5. Dual Channel Regulated Power Supply (0-30V) – 1No.
6. Connecting wires

CIRCUIT DIAGRAM:

Fig. 1. Circuit arrangement for Input Characteristics

Fig 2. Circuit arrangement for Output Characteristics

THEORY:
Transistor is a three terminal [emitter(E), base(B) and collector(C)], three region
(emitter, base and collector) and two junction [emitter (JE) and collector (JC)] solid state
semiconductor device. Transistor consists of a Si or Ge crystal, in which a layer of one type of
semiconductor is sandwiched between two layers of opposite type. Accordingly transistors are of
two types. Which are p-n-p and n-p-n. Middle region is called base(B) and outer regions are
called emitter(E) and collector(C).
Physical Properties: Emitter size is in between Base and Collector. Base is very thin(i.e
µm).Collector has largest size compared to other regions.
Electrical Properties: Emitter is heavily doped. Base is very lightly doped. Collector is doped
in between Emitter and Base.
Symbols:

n-p-n p-n-p
In both transistors, the arrow head on emitter terminal specifies the conventional
direction of emitter current (IE) when emitter junction (JE) is forward biased. The circle in the
symbol specifies metal or plastic case, in which semiconductor sandwich is hermetically sealed
against moisture.
Functions of Emitter, Base and Collector:
Emitter function is to emit or supply large no. of majority carriers to the base. The
requirements to fulfill this function is, Emitter is heavily doped and JE is always forward biased.
Base function is to pass most of the injected carriers (from emitter) to the collector. The
requirements to fulfill this function is, base is very thin and lightly doped.(i.e width of base is
very small in comparison to diffusion length of carriers injected into the base from emitter ).
Hence a very few injected carriers are lost in the base, through recombinations and almost all
injected carriers will reach the JC. Collector function is to collect the majority carriers supplied
by the emitter and passing through base. The requirements to fulfill this function is, JC is reverse
biased. During the operation of transistor, large heat is produced particularly at JC as carriers
lose their energy while they crossing the JC and this loss of energy will appears in the form of
heat. Hence collector region is physically larger than emitter and base, to dissipate more power.
I/P Characteristics of C.B. transistor:
In CB configuration, the base is common to both input (emitter) and output (collector).
(i.e base terminal is connected to the ground from a.c. point of view). The circuit arrangement for
plotting static I/O characteristics shown in Fig.1. I/P characteristic is a curve drawn between i/p
voltage (VEB) verses i/p current (IE) at a constant o/p independent variable (VCB) shown in Fig.3.
For VEB less than cut-in voltage, IE is extremely small. VBE,cut-in = 0.1 V (for Ge) and 0.5 V (for
Si). At cut-in voltage, IE is start to increase. For VEB greater than cut-in voltage, IE increases
rapidly with small increase in VEB. This shows that, dynamic i/p resistance (ri) of C.B transistor
is very poor. Typical values of ri is in between 20Ω -50 Ω. With an increase in VCB, IE increases
for a fixed value of VEB, due to early effect. Which results i/p curves are shifted left shown in
fig.3.With an increase of collector voltage (VCB), the space-charge width at the JC increases and
the effective base width WB decreases. Which results, recombination within base region reduces
and majority carrier concentration gradient at JE increases and hence IE increases. This
phenomenon is known as “Early effect”.

O/P Characteristics of C.B. transistor:

The circuit arrangement for plotting static O/P characteristics shown in Fig.2. O/P characteristic
is a curve drawn between o/p voltage (VCB) verses o/p current (IC) at a constant i/p independent
variable (IE) shown in Fig.4. O/P characteristics are divided into three basic regions.(i.e active,
saturation and cut-off).
Active Region: It is the area to the right of the ordinate VCB = 0 and above IE =0, in which JE is
forward biased and JC is reverse biased. In this region, IC is almost independent of VCB, but
depends upon IE. As IE increases, IC also increases (i.e i/p current controls the o/p current). Hence
transistor is current operated device. However, for a fixed IE, IC increases very little (0.5%), with
an increase of VCB , due to early effect. This shows that, dynamic o/p resistance (r o) of C.B
transistor is largest compared to other configurations. Typical value is 1 MΩ. As o/p
characteristics are almost flat(i.e similar to a constant current source), o/p section of transistor in
C.B configuration acts as a constant current source. If VCB exceeds VCB, max, breakdown occurs
in the transistor at JE, is commonly known as punch-through or reach-through effect. At a
particular value of VCB depletion width spreads into the base such that effective base width is
zero and VCB penetrate the base(i.e. large VCB appears across JE). Which results breakdown of JE
occurs and large IE flows. This breakdown is known as punch-through or reach-through.
 Saturation Region: It is the area to the left of the ordinate VCB = 0, in which both JE and JC
are forward biased. When VCB approaches to 0 V, JC becomes forward biased. As JE is already
forward biased, transistor enters into saturation region. Now, collector supplies hole current from
collector to base across JC to the emitter. This hole current is in a direction opposite to the
original hole current flows from E to C through B, due to forward biasing of JE.
As a result, magnitude of net hole current drops rapidly for a small change in VCB. As IC does not
depend upon IE in this region, hence the name saturation.

Cut-off Region: It is the area to the right of and below the IE = 0 characteristics, in which both
JE and JC are reverse biased. By making i/p terminal (E) open (i.e IE=0), JE becomes reverse
biased (by contact potential) and with reverse voltage at JC, C.B. transistor operates in cut-off
region. In this region, IC = ICBO =ICO. Typically ICO is µ.A (for Ge) and n.A (for Si).In n-p-n
transistor, this current is contributed by thermally generated minority carriers (i.e electrons form
B to C and holes from C to B) drift across JC. These carriers will contribute a part of IC called
Collector reverse current (ICBO or ICO). However thermally generated minority carriers in emitter
region (i.e holes) after crossing the JE, will not cross JC (i..e as reverse biased, JC will oppose the
majority carriers) and will not contribute any ICO.

C.B. Transistor Parameters:

IC
i) Dc Current Gain ( αdc ) =
IE (typical value is 0.98)
 IC I I
ii) AC Current Gain ( αac ) =  C 2 C1
 IE I E 2  I E1 (at V --> constant)
CB
iii) Expression for IC = -α IE + Ico
PROCEDURE:
Input characteristics:
1. Make the Connections as per the Circuit Diagram (Fig.1)
2. At First Set the Voltage VCB constant (i.e VCB = 5V), by varying the Supply Voltage VCC.
3. Now, Vary the Supply Voltage (VEE ) in Steps and Note Down the values of IE and VEB at
each Step using DMM.
4. Tabulate the values of IE and VEB.
5. Repeat the above steps 2,3 and 4 for VCB = 10V and 15V.
6. From the Tabulated Values of IE and VEB, Plot the Input Characteristics.(i.e., VEB Vs IE at
constant VCB)
7. At Suitable Operating Point on the I/P Characteristic Curve , Calculate
Dynamic I/P Impedance of the Transistor as per following expression
 VEB V  VEB1
ri   EB 2
 IE I E 2  I E1 (at VCB = Constant)

Output characteristics:
1. Make the Connections as per the Circuit Diagram (Fig.2)
2. At First Set the Current IE Constant (i.e IE = 2 m.A), by Varying the Supply Voltage VEE
3. Now, Vary the Supply Voltage VCC in steps and Note Down the values of IC and VCB at each
step using DMM.
4. Tabulate the values of IC and VCB.
5. Repeat the above steps 2,3 and 4 for IE = 4 m.A and 6 m.A.
6. From the values of IC and VCB, Plot the Output Characteristics.(i.e., VCB Vs IC at constant IE).
7. At Suitable Operating Point on the O/P Characteristic Curve , Calculate
Dynamic O/P Impedance, αdc & αac of the Transistor as per following expressions

 VCB V  VCB1
ro   CB 2
 IC I C 2  I C1 ( at IE = Constant)
OBSERVATION TABLE:

Input Characteristics Output Characteristics

VCB = 5V VCB = 10V IE = 2 m.A IE = 4 m.A
VEB IE VEB IE VCB IC VCB IC
(V) (m.A) (V) (m.A) (V) (m.A) (V) (m.A)
EXPECTED GRAPH:

Fig.3. I/P Characteristics Fig.4. O/P Characteristics

CALCULATIONS:
From I/P Characteristics
 VEB V  VEB1
1. Dynamic I/P Resistance ri   EB 2 
 IE I E 2  I E1 (at VCB = V)
From O/P Characteristics
 VCB V  VCB1
1. Dynamic O/P Resistance ro   CB 2 
 IC I C 2  I C1 ( at IE = m.A)
IC
2. DC Current Gain ( αdc ) = 
IE

 IC I I
3. AC Current Gain ( αac ) =  C 2 C1 
 IE I E 2  I E1 (at VCB = V)

RESULT:

 Input Characteristics for various Output Voltages and Output Characteristics for various
Input Currents are plotted for the given Transistor in CB Configuration.

 From the Characteristics following Parameters are Calculated

I/P Impedance = ( ri ) =
O/P Impedance = ( ro ) =
DC Current Gain ( αdc ) =
AC Current Gain ( αac ) =
Pre-Lab Work:

1. What is the origin of the word transistor?

2. Draw the symbols for p-n-p and n-p-n transistors
3. What is the significance of arrow head in emitter lead?
4. Name the junctions of a CB transistor.
5. Why base width is very thin compared to emitter and collector Regions?
6. Why collector region is wide compared to emitter and base?
7. Why emitter is heavily doped compared to other regions?
8. Why base is lightly doped compared to other regions?
9. Can we interchange the functions of emitter and collector in a p-n-p transistor?
10. What are the merits of transistors compared to thermionic tubes?
11. What are the limitations of transistors?
12. List out the configurations in which transistor is used.
13. Why n-p-n and p-n-p transistors are known as bi-polar junction transistors?
14. How can the leads of a BJT are identified?
15. Explain the Transistor operation?
16. Why Base Current is usually much smaller than Emitter and Collector Current?
17. What are I/P and O/P Characteristics?
18. Draw the input and output characteristics of the transistor in CB configuration?
19. Identify various regions in output characteristics?
20. Specify the biasing conditions required for active, saturation & cut-off regions.
21. What is early effect?
22. What is punch-through effect?
23. How CB transistor acts as a constant current source
24. How transistor is current operated device?
25. How a CB transistor is cut-ff ?
26. Which current is carried out in CB transistor when it is cut-off? Give it's value.
27. Give the expression for collector current in CB transistor.
28. Which breakdown will takes place in CB transistor? And when will it takes place?
29. Give typical values of dynamic input and output impedances of CB transistor?
30. Define α(alpha)? What is the range of α?
31. Why current gain of a transistor in CB is lowest?
32. List out the Merits and Demerits and applications of a Transistor in CB Configuration