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TRANSISTOR
( BJT )
Short history
1904
The Vacuum tube diode was
introduced by J. A. Fleming
Ip Ip
VP VP
CATHODE CATHODE
VAC VAC
REVERSE BIAS
FORWARD BIAS
1906- TRIODE
Lee de Forest
added a third
element called the
control grid to the
vacuum tube,
resulting in the first
amplifier, the triode
TRIODE ELEMENTS
PLATE
CONTROL GRID
VPK
VGK CATHODE
VAC
at_Ip_constant
Vg
Vp
2. Plate Resistance= is the ratio of the change in
plate voltage (Vp) to the change of plate current
(Ip) at a constant grid voltage (Vg).
Vp
rP @Vg constant
Ip
3. Transconductance (gm) = is the ratio of the
change of plate current (Ip) to the change in grid
voltage (Vg) at a constant plate voltage (Vp)
Ip
gm @Vp constant
Vg
3 TRIODE PARAMETERS
RELATION
rP gm
Early 1930’s
Understanding of BJT 13
Transistor is a three terminal solid
state device which is capable of
AMPLIFYING SIGNALS
Bipolar Junction Transistor
technically described B as
JBipolar Junction
T Transistor
“Bipolar “ because they use two
“Bi
different
means two
types of semiconductor
materials namely N type and P type
1. N type & 2. p type
and because they use opposite
polarity biasing voltage
Junction?
FET
BJT is usually termed as a 3
terminal current controlled
device
WHY?
The Bipolar junction transistor consist of two
back to back P-N junctions manufactured in
a single of a semiconductor crystal.
Three region:
Emitter
Base
Collector
Emitter – it is more heavily doped than any of the
other regions because its main function is to
supply majority charge carries (either electrons or
holes) to the base.
Base – it forms the middle section of the transistor.
It is very thin (10-6m) as compared to either the
emitter or collector and is very lightly-doped.
Collector – its main function (as indicated by its
name) is to collect majority charge carries coming
from the emitter and passing through the base.
Two types of transistor
1.
2.
PNP Pointing iN NPN Not Pointing iN
Construction for
PNP & NPN
0.15
E C
0.001
P N P N P N
Basic operation
P N N P
The collector is the The base is very The emitter is
largest and is
connected to the heat thin lightly doped small and heavily
sink doped
Base–Collector is reverse
bias. 99% 0f the carriers
Base-emitter is forward
injected Into the base
bias
region are swept to the
collector
A PNP transistor
Emitter (p) Base (n) Collector (p)
Hole flow
_
+
A forward – biased P-N junction is
basically a low resistance path for
current flow. Conversely , a reverse –
biased P-N junction represents a high
resistance path
Three transistor currents
IC
C
B
IE = IC + IB
IB
β = IC / IB
α - common base ,
E
short circuit amplification
IE
factor
α = IC / IE
β - common – emitter,
forward–current amplification
factor
Note
The collector current , IC , is always much
larger than the base current
Typically , IC is between 49 and 300 times
greater than IB
Examples
1.The collector current is 1.2 mA when the
base current is 24 micro ampere. What is
the current gain , , of the transistor
2.The of a certain BJT is known to be
approximately 180. How much base
current is required in order to have 18 mA
of collector current
Example
3. Suppose you measure the base
current for a certain BJT and find it is
15 A. The corresponding collector
current is 2mA. What is the dc
current gain , , of the BJT if it is an
NPN transistor ? If it is a PNP
transistor ?
Transistor Amplifying Action
IE IC
P N P
IB
Vin=200mV RL= 5kΩ
Ri=20Ω Ro=100k Ω
TRANS ISTOR
Hence TRANSISTOR
Amplified Output
Note:
Value of β 20 to 100
Basic features of Common Emitter
Amplifiers
1.The input signal is introduced into the
base circuit, and the output is taken
from the collector circuit ( the emitter
is common to the input and output)
2.The input circuit is low impedance .
Typically , the input impedance is in
the range of 25 to 5 k
3.The output circuit is medium to high
impedance , approximately 50 to
50k.
4.Current gain is always greater than 1
5.There is 180 degrees phase reversal
between the input and output signals
Common Collector
Input Output
=/(1-)
DC BIASING of BJT
To use the devices for amplification of
voltages or current , or as a control
elements, it is necessary to bias the
device
Therefore, the reason for Biasing:
To turn the device ON and place it in
operation in the region of its
characteristics where the device
operates most linearly
IMPORTANT BIASING RULE
PNP transistor, both collector and base are
negative with respect to the emitter (N of
negative being the same as the middle letter
of PNP) collector is more negative than
base.
NPN transistor, both collector and base are
positive with respect to the emitter (P of
Positive being the same as the middle letter
of NPN) collector is more positive than the
base
Two transistor Characteristic Curves:
1. Input Characteristic Curve
– Plot of Iin vs Vin at various values of Vout
regardless of its configuration
N
E CUT – OFF REGION
Basic uses of BJT
1.Switching
2.Amplifying
3.Impedance matching
Types of BJT biasing ckts.
1. Fixed bias circuit
2. Fixed bias circuit with
emitter resistor
3. Beta independent circuit
RB1 RC
FIXED BIAS CIRUIT
EMITTER STABILIZED
RB2 RE
BETA INDEPENDENT
BETA INDEPENDENT
(also called Voltage Divider Bias)
RB1 RC
Vcc
RB2 RE
a. HYBRID MODEL
b. Re MODEL
A. HYBRID MODEL
SMALL SIGNAL ANALYSIS BJT
Io
Iin
BJT Vo
Vi
Vi ==
Vi h I
h11 Iinin
11 + h 12 Vo
Vi
Vi = h11 I in + h1212 V
Voo
IIo0 = hh21
21 Iinin + h 22 Vo
IV
o i =
= h21 I in + hh2222 V
vo
Iin
hi
+
hrVo - hfIin ho
Vo
hybrid
COMMON EMITTER
IIinB
B C
hhiei
+
hreVhrCE
Vo - hfehIfIBin hoeo
VVCE
o
E
hybrid
COMMON EMITTER
BASE
IIinBE
B C
hhieibi
+
h rerb VhrCB
Vo - hIfIBEin
hfefb hob
o
oe
CE VVCE
CB
o
E
hybrid
COMMON EMITTER
COMMON COLLECTOR
IIinBB
B
hhieici C
+
h rerc VhrEC
Vo - hfefchIfIBin hoc
o
oe
CE VVCE
EC
o
E
Simplified Hybrid
hr = 0 hO = 0
Simplified Hybrid
Iin
hi
hfIin Vo
h-parameters Typical Values
CE CB CC
hi 1 k 20 1 k
hr 2.5 X 10-4 3 X 10-4 1
hf 50 - 0.98 -50
ho 25 s 0.5 s 25s
Comparison between three
transistor configuration
CB CE CC
Iin
re Ie=Ic Vo
COMMON BASE
The Re model
Iin
re IB Vo
COMMON EMITTER
LARGE SIGNAL AMPLFIERS
ARE DESIGNED FOR HIGHER
INPUT CURRENT LEVELS AND
OUTPUT POWER LEVEL ( SUCH
AS AN AUDIO AMPLIFIER
SYSTEM)
Classes of Large Signal Amplifier
Operation:
1. Class A
– Ic flows at all times or during 360 of the
input cycle
– Q point is halfway between cut-off &
saturation
2. Class B
– Ic flows at 180 degrees
– When Q point is set at cut-off
3. Class C
– Ic flows for approximately 120 degrees of the
input signal cycle
– When Q point is set below cut-off
Advantages of transistor over
vacuum tubes
smaller and light weight
had no heater requirement
more efficient since less power is
absorbed by the device
instantly available for use requiring no
warm – up period
low operating voltages
POSSIBLE BOARD EXAM
ECE Board Exam November
1996
1. The arrow in the symbol of a
transistor
indicates the direction of
A. electron current in the collector
B. donor ion current
C. electron current in the base
D. hole current in the emitter
ECE Board Exam November
2001
2. What is the greatest danger to a
transistor?
A. Excessive power
B. Excessive resistance
C. Cold
D. static electricity
ECE Board Exam April 1999
3. Name of a semiconductor device that
has three or more elements.
A. Thermistor
B. Transistor
C. Resistor
D. Collector
ECE Board Exam April 1998
4. A transistor acts as __________ when
saturated.
A. open circuit
B. very low resistance
C. very high resistance
D. variable resistance
ECE Board Exam April 1998
5. In semiconductor technology the
characteristic of a transistor in cut-off
refers to a condition when _________.
A. depletion
B. saturation
C. steady
D. cut-off
ECE Board Exam November
1997
11. ______ is the term used to express the
ratio of the change in dc collector
current to a change in base current in a
bipolar transistor.
A. Alpha
B. Delta
C. Gamma
D. Beta
ECE Board Exam March 1996
12. _________ for a transistor to be cut-off
A. Capacity
B. Type of input
C. Type of bias
D. Polarity of source voltage
ECE Board Exam March 1996
14. Common-base (CB) amplifier has
________ compared to common-
emitter and common-collector amplifier.
A. Common transmitter
B. Common collector
C. Common emitter
D. Common base
ECE Board Exam April 2000
18. Percentage of current in an NPN
transistor that reaches the collector.
A. 75 percent
B. 100 percent
C. 98 percent
D. 90 percent
ECE Board Exam November
1995
19. Solve the collector current if base
current is 200 mA and the current gain
is 20.
A. 10 A
B. 4 A
C. 1 A
D. 40 A
ECE Board Exam April 1999
20. Emitter follower is used for _______.
A. current gain
B. impedance matching
C. voltage gain
D. current regulator
ECE Board Exam April 1998
A. collector-base
B. collector
C. base
D. emitter
ECE Board Exam April 1998
A. 30 mA
B. 3 mA
C. 2 mA
D. 1.2 mA
ECE Board Exam November
1995
24. What is the most stable type of
biasing?
A. Current feedback
B. Fixed bias
C. Voltage divider
D. Voltage feedback
ECE Board Exam April 1998
25. A transistor in which n-type and p-
type materials are used is called
______.
A. unijunction
B. TTL
C. bipolar
D. FET
26. ______ is term used to express the
ratio of change in the dc collector current
to a change in emitter current in a bipolar
transistor.
A. Gamma
B. Beta
C. Alpha
D. Delta
ECE Board Exam March 1996
27. ______ is the region in a transistor that
is heavily doped.
A. Collector
B. Ground
C. Base
D. Emitter
28. Reverse saturation current doubles in
value for every what increase in
temperature?
A. 10º C
B. 20 º C
C. 5 º C
D. 15 º C
29. What h is define as the short circuit input
impedance parameter for common base
amplifier.
A. hi
B. hob
C. hie
D. hib
30. The name of the term used to describe the
condition in a transistor when the emitter-
base junction has zero bias or is reversed bias
and there is no collector current.
A. Saturation
B. Cut off
C. Over driven
D. Over load
THE END
THANKS