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IRF3710
HEXFET® Power MOSFET
l Advanced Process Technology D
l Ultra Low On-Resistance VDSS = 100V
l Dynamic dv/dt Rating
l 175°C Operating Temperature RDS(on) = 23mΩ
l Fast Switching G
l Fully Avalanche Rated ID = 57A
S
Description
Advanced HEXFET® Power MOSFETs from International Rectifier utilize
advanced processing techniques to achieve extremely low on-resistance
per silicon area. This benefit, combined with the fast switching speed and
ruggedized device design that HEXFET power MOSFETs are well known
for, provides the designer with an extremely efficient and reliable device for
use in a wide variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 0.75
RθCS Case-to-Sink, Flat, Greased Surface 0.50 ––– °C/W
RθJA Junction-to-Ambient ––– 62
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IRF3710
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 100 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.13 ––– V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 23 mΩ VGS = 10V, ID =28A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 250µA
gfs Forward Transconductance 32 ––– ––– S VDS = 25V, ID = 28A
––– ––– 25 VDS = 100V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 80V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 VGS = 20V
IGSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 130 ID = 28A
Qgs Gate-to-Source Charge ––– ––– 26 nC VDS = 80V
Qgd Gate-to-Drain ("Miller") Charge ––– ––– 43 VGS = 10V, See Fig. 6 and 13
td(on) Turn-On Delay Time ––– 12 ––– VDD = 50V
tr Rise Time ––– 58 ––– ID = 28A
ns
td(off) Turn-Off Delay Time ––– 45 ––– RG = 2.5Ω
tf Fall Time ––– 47 ––– VGS = 10V, See Fig. 10
Between lead, D
LD Internal Drain Inductance ––– 4.5 –––
6mm (0.25in.)
nH
from package G
LS Internal Source Inductance ––– 7.5 –––
and center of die contact S
––– ––– 57
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
VSD Diode Forward Voltage ––– ––– 1.2 V TJ = 25°C, IS = 28A, VGS = 0V
trr Reverse Recovery Time ––– 140 220 ns TJ = 25°C, IF = 28A
Qrr Reverse Recovery Charge ––– 670 1010 nC di/dt = 100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by ISD ≤ 28A, di/dt ≤ 380A/µs, VDD ≤ V(BR)DSS,
max. junction temperature. (See fig. 11) TJ ≤ 175°C
Starting TJ = 25°C, L = 0.70mH Pulse width ≤ 400µs; duty cycle ≤ 2%.
RG = 25Ω, IAS = 28A, VGS=10V (See Figure 12)
This is a typical value at device destruction and represents
operation outside rated limits.
This is a calculated value limited to TJ = 175°C .
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IRF3710
1000 1000
VGS VGS
TOP 16V TOP 16V
10V 10V
7.0V 7.0V
ID, Drain-to-Source Current (A)
10 10
3.5V
3.5V
1 1
1000.00 3.0
I D = 57A
2.5
ID, Drain-to-Source Current (Α )
100.00
R DS(on) , Drain-to-Source On Resistance
T J = 175°C 2.0
(Normalized)
10.00 1.5
T J = 25°C 1.0
1.00
0.5
VDS = 15V
20µs PULSE WIDTH V GS = 10V
0.10 0.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
3.0 4.0 5.0 6.0 7.0 8.0 9.0
TJ , Junction Temperature ( °C)
VGS, Gate-to-Source Voltage (V)
100000 12.0
VGS = 0V, f = 1 MHZ ID= 28A
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd 10.0
8.0
Ciss
1000 6.0
Coss
4.0
100 Crss
2.0
10 0.0
1 10 100 0 20 40 60 80 100
VDS, Drain-to-Source Voltage (V) QG Total Gate Charge (nC)
1000.00 1000
OPERATION IN THIS AREA
LIMITED BY R DS(on)
ID, Drain-to-Source Current (A)
ISD, Reverse Drain Current (A)
100.00 100
TJ = 175°C
100µsec
10.00 10
1msec
T J = 25°C
1.00 1 10msec
Tc = 25°C
VGS = 0V Tj = 175°C
Single Pulse
0.10 0.1
0.0 0.5 1.0 1.5 2.0 1 10 100 1000
VSD, Source-toDrain Voltage (V) VDS , Drain-toSource Voltage (V)
60
RD
VDS
50 VGS
D.U.T.
RG
+
40 -VDD
I D , Drain Current (A)
V GS
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
10%
VGS
Fig 9. Maximum Drain Current Vs.
td(on) tr t d(off) tf
Case Temperature
Fig 10b. Switching Time Waveforms
D = 0.50
(Z thJC)
0.20
Thermal Response
0.1 0.10
0.05 P DM
SINGLE PULSE t1
0.02 (THERMAL RESPONSE)
0.01 t2
Notes:
1. Duty factor D = t1/ t 2
2. Peak T J = P DM x Z thJC +TC
0.01
0.00001 0.0001 0.001 0.01 0.1 1
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IRF3710
550
15V ID
TOP 11A
20A
440 BOTTOM 28A
L DRIVER
VDS
110
V(BR)DSS
tp
0
25 50 75 100 125 150 175
Starting T , Junction
J Temperature ( °C)
50KΩ
12V .2µF
QG .3µF
VGS +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
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IRF3710
Peak Diode Recovery dv/dt Test Circuit
+
- +
-
RG • dv/dt controlled by RG +
• ISD controlled by Duty Factor "D" VDD
-
• D.U.T. - Device Under Test
VGS
[VGS=10V ] ***
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
[VDD]
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% [ISD ]
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Visit us at www.irf.com for sales contact information.03/05
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