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Description
The Advanced Power MOSFETs from APEC provide the G
D
designer with the best combination of fast switching, S TO-252(H)
ruggedized device design, ultra low on-resistance and
cost-effectiveness.
G
D
S TO-251(J)
Thermal Data
Symbol Parameter Value Units
Rthj-c Thermal Resistance Junction-case Max. 10 ℃/W
Rthj-a Thermal Resistance Junction-ambient Max. 110 ℃/W
Source-Drain Diode
Symbol Parameter Test Conditions Min. Typ. Max. Units
2
VSD Forward On Voltage IS=10A, VGS=0V - - 1.3 V
2
trr Reverse Recovery Time IS=10A, VGS=0V, - 17 - ns
Qrr Reverse Recovery Charge dI/dt=100A/µs - 9 - nC
Notes:
1.Pulse width limited by safe operating area.
2.Pulse width <300us , duty cycle <2%.
2/4
AP9T15GH/J
50 40
o
T C =25 C T C = 150 o C
40 5.0V 5.0V
4.5V 4.5V
ID , Drain Current (A)
30
3.5V 20 3.5V
20
V G =1.5V V G =1.5V
0 0
0 1 2 3 4 5 0 1 2 3 4 5 6
45 1.8
I D =6A
43 I D = 5.2 A 1.6
V G =4.5V
T C =25 o C
Normalized RDS(ON)
RDS(ON) (mΩ )
41 1.4
39 1.2
37 1.0
35 0.8
33 0.6
0 2 4 6 8 10 -50 0 50 100 150
8
1.5
Normalized VGS(th) (V)
T j =150 o C T j =25 o C
IS(A)
1.0
0.5
0 0.0
0 0.2 0.4 0.6 0.8 1 1.2 -50 0 50 100 150
3/4
AP9T15GH/J
f=1.0MHz
14 1000
12
I D =10A
VGS , Gate to Source Voltage (V)
V DS =10V C iss
10
V DS =12V
V DS =16V
8
C (pF)
100
6 C oss
C rss
4
www.DataSheet4U.com
0 10
0 2 4 6 8 10 12 1 5 9 13 17 21 25 29
100 1
Normalized Thermal Response (Rthjc)
100us 0.2
10
ID (A)
0.1
1ms 0.1
0.05
10ms
0.02
1 100ms PDM
0.01 t
DC
T
o
T c =25 C Single Pulse
0.1 0.01
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1
Fig 9. Maximum Safe Operating Area Fig 10. Effective Transient Thermal Impedance
VDS VG
90%
QG
4.5V
QGS QGD
10%
VGS
Fig 11. Switching Time Waveform Fig 12. Gate Charge Waveform
4/4