Q 1. Which of the following statements does not represent ohm's law?

A. current / potential difference = constant

B. potential difference / current = constant
C. potential difference = current x resistance
D. current = resistance x potential difference

Q 2. The potential difference required to pass a current 0.2 A in a wire of

resistance 20Ω is ____.
A. 100 V
B. 4 V
C. .01 V
D. 40 V

Q 3. Three resistors 2 Ω , 3 Ω and 4 Ω are connected so that the equivalent

resistance is 9 Ω . The resistors are connected _________.
A. all in series
B. all in parallel
C. 2 Ω and 3 Ω in parallel and the combination in series with 4 Ω
D. 2 Ω and 3 Ω in series and the combination in parallel to 4 Ω

Q 4. A zener diode works on the principle of

a) tunneling of charge carriers across the junction
b) termionic emission
c) diffusion of charge carriers across the junction
d) hopping of charge carriers across the junction

Q 5. A property of semiconductors that is important for high-temperature application

is
a) high carrier mobilities
b) high conductivity
c) wide energy gap
d) high diffusion rate

Q 6.The device used for measuring potential difference is known as _____________.

A. potentiometer
B. ammeter
C. galvanometer
D. voltmeter

Q 7. The free electrons of a metal _____________.

A. do not collide with each other
B. are free to escape through the surface
C. are free to fall into the nuclei
D. are free to move anywhere in the metal
Q 8. "FET" is a type of transistor, Its full name is ________ Effect Transistor...?

A. Field
B. Factor
C. Flash
D. Force

Q 9. In a simple DC circuit with a constant voltage, where the resistance increases

current will:

A. decrease.
B. stop.
C. increase.
D. remain constant

Q 10. A path between two or more points along which an electrical current can be
carried is called as:

A. network.
B. relay.
C. circuit.
D. loop

Q 11. The formula for electrical current is:

A. Voltage / Resistance.
B. Resistance * Voltage.
C. Voltage + Resistance.
D. Resistance / Voltage.
Q 12. Electric current is the flow of which of the following?
A. Neutrons
B. Photons
C. Electrons
D. Quarks

Q 13. How does the total current relate to the individual currents in each
branch of a parallel circuit?

A. It equals the average of each branch current

B. It decreases as more parallel branches are added to the circuit
C. It equals the sum of the currents through each branch (Kirchoff's
Current Law)
D. It is the sum of the reciprocal of each individual voltage drop

Q 14. What are the 2 terminals of a diode called?

A. Anode and Cathode
B. Drain and Source
C. Pentode and Triode
D. Gate and Drain

Q 15. Which device can be used to store charge?

A. Diode
B. Capacitor
C. Resistor
D. Transistor

Q 16. In a series Circuit combination

A. Current is same through all resistors.

B. Voltage is same through all the resistors.
C. both A & B.
D. None of the above

Q 17. In an intrinsic semiconductor, the number of holes

A. Equals the number of free electrons.

B. is greater than the number of free electrons.
C. is less than the number of free electrons.
D. None of the above.

Q 18. An external voltage source is applied to a p-type semiconductor. If the left end
of a crystal is positive,which way do the majority carriers flow?

A. Left
B. Right
C. Neither
D. impossible to say.

Q 19. Electrons are minority carriers in which type of semiconductor?

A. Extrinsic
B. Intrinsic
C. P-type
D. n-type

Q 20. what kind of device is a diode

A. Bilateral
B. Linear
C. Non linear
D. Unipolar
Q 21. with a half –wave rectified voltage across the load resistor, load current flows
for what part of cycle?

A. 0 degrees
B. 90 degrees
C. 180 degrees
D. 360 degrees

Q 22. how many diodes are required for bridge rectifier

A. 2 diodes
B. 1 diode
C. 4 diodes
D. None

Q 23. If N1/N2=4, and the primary voltage is 120 V, what is the secondary voltage?

A. 0V
B. 30V
C. 60V
D. 480V

Q 24. This Symbol is of

A. Diode
B. Schottky diode
C. Zener Diode
D. Tunnel diode

Q 25. If ND and NA are donor and acceptor concentration respectively and ND> NA,
then net impurity concentration is

a) ND-NA
b) ND+NA
c) NA-NA
d) ND and NA

Q 26. When a semiconductor is doped, its electrical conductivity:

a) Increases
b) decreases in the direct ratio of doped material.
c) decreases in the inverse ratio of doped material
d) remain unaltered
Q 27. In a series Circuit combination
A. Current is same through all resistors.
B. Voltage is same through all the resistors.
C. both A & B.
D. None of the above.

Q 28. When a voltage is applied to an intrinsic semiconductor that is at room

temperature
a) electrons move to the positive terminal and holes move to the negative
terminal
b) holes mov e to the positive terminal and electrons move to the negative
terminal.
c) both holes and electrons move to the positive terminal.
d) both holes and electrons move to the negative terminal.

Q29. If a small amount of antimony is added to germanium

a) the resistance is increased
b) the germanium will be a p-type semiconductor
c) the antimony becomes an acceptor impurity.
d) there will be more free electrons then holes in the semiconductor

Q30. The energy required to break a covalent bond in a semiconductor

a) is equal to leV
b) is equal to the width of the forbidden gap
c) is greater in germanium than in silicon
d) is same in germanium and silicon

Q31. Capacitance pf a reverse-biased p-n junction

a) depends mainly on the reverse saturation current
b) increase as the reverse bias is increased
c) increases as the reverse bias is decreased
d) makes the p-n junction more effective at high frequencies

Q32. ICBO is the current that flows when a specified de voltage is applied
a) in the forward direction to gthe emitter junction with the collector open-
circulated
b) in the reverse direction to the emitter junction with the collector open-
circuited
c) in the forward direction to the collector junction with the emitter
open-cicuited
d) in the reverse direction to the collector junction with the emitter open-
circuited.
Q33. Which device can be used to store charge?
A. Diode
B. Capacitor
C. Resistor
D. Transistor

Q34. Thermal runway in a transistor biased in the active region is due to

a) heating of a transistor
b) changes in β which increases with temperature
c) base emitter voltage V(BE) which decreases with rise in temperature
d) change in reverse collector saturation current due to rise in
temperature

Q35. In a simple DC circuit with a constant voltage, where the resistance

increases current will:
A. decrease.
B. stop.
C. increase.
D. remain constant

Q 36. A path between two or more points along which an electrical current can
be carried is called a:

A. network.
B. relay.
C. circuit.
D. loop

Q 37. The formula for electrical current is:

A. Voltage / Resistance.
B. Resistance * Voltage.
C. Voltage + Resistance.
D. Resistance / Voltage.

Q 38. Electric current is the flow of which of the following?

A. Neutrons
B. Photons
C. Electrons
D. Quarks

Q39. Which of the following is an example of a series-parallel circuit.

A. c.
B. D.

Q 40. What are the 2 terminals of a diode called?

A. Anode and Cathode
B. Drain and Source
C. Pentode and Triode
D. Gate and Drain
 2 marks question

41. Find the equivalent resistance across the terminal A-B

A.2Ω
B. 12Ω
C. 4Ω
D. 6Ω

42. Determine I in the following circuit

A.2A
B. 4/3 A
C. 2/3 A
D. 6A

43. Determine the current & power in 10Ω resistor.

A.10A, 1000W
B. 5A, 250W
C. 1A, 100W
D. 4A, 160W
44. The KVL equation for the given network is

A. I1R1+I2R2+I3R3+I4R4= E1-E2-E3
B. I1R1+I2R2+I3R3+I4R4= E1-E2
C. I1R1+I2R2+I3R3+I4R4= E1+E2+E3
D. I1R1+I2R2+I3R3= E1-E2-E3

45. Which one is the nodal equation for the network(A)

A.

B.

C. None of the above.

D. Cannot be solved

46. A transistor has a collector current of 10mA and a base current of 40µA. What is
the current gain of the transistor?
A. 150
B. 250
C. 400
D. 200
47. In the figure,

A. 6 Ω , 3 Ω and 9 Ω are in series

B. 9 Ω and 6 Ω are in parallel and the combination is in series with 3 W
C. 3 Ω , 6 Ω and 9 Ω are in parallel
D. 3 Ω , 6 Ω are in parallel and 9 Ω is in series

Q 48. The resistance across AB is

A. 4 Ω
B. 1 Ω
C. 2 Ω
D. .5 Ω

Q49. In a p-type silicon sample, the hole concentration is 2.25x10(15)/Cm(3). if the

intrinsic carrier concentration is 1.5x10(10)/Cm(3), the electron concentration is
a) zero
b) 10(10)/Cm(3)
d) 10(5)/Cm(3)
e) 1.5x10(25)Cm(3)

Q 50. if ά = 0.995,I(E)= 10mA and I(CO)= 0.5(U)A, the I(CE)) will be

a) 25(U)A
b) 100(U)A
c) 10.1(m)A
d) 10.5(m)A
Q 51. In an unbiased pn junction, zero current implies that
a) the potential barrier has disappeared
b) number of holes diffusing from p-side to n-side equals the number of electrons
diffusing from n-side to p-side
c) no carriers cross the junction
d) total current crossing the junction from p-side to n-side equals the total
current crossing the junction from n-side to p-side

Q 52. How does the total current relate to the individual currents in each
branch of a parallel circuit?

A. It equals the average of each branch current

B. It decreases as more parallel branches are added to the circuit
C. It equals the sum of the currents through each branch (Kirchoff's
Current Law)
D. It is the sum of the reciprocal of each individual voltage drop

Q53. When determining the common-emitter current gain by making small changes in
direct currents, the collector voltage is held constant so that
a) the transistor will not be burned out
b) the change in emitter current will be due to a change in collector
current
c) the output resistance will be high
d) the change in collector current will be due to a change in base
current

Q 54. In an intrinsic semiconductor, Fermi level represents the energy level with
probality of its occupation of
a) 0%
b) 25%
c) 50%
d) 100%

Q 55.