Reverse Recovery in P-N Junction Rectifier Diode

In a forward-biased diode, majority carriers from the p- and n-layers

cross the junction to become the minority carriers on the other side. The
corresponding forward drop (VF) is small, as mentioned earlier. At this
condition, the p- and n-layers near the junction remain saturated with minority
carriers.

If the device is open circuited, the carriers die by a recombination

process, which takes a fairly long time. Normally, a reverse dc voltage (VR) is
applied to turn off the device, as shown in Figure 1. At time t = t0, the reverse
voltage is applied when the current goes down linearly because series-circuit
inductance L (di/dt = - VR / L). During the interval from t1 to t2, the current is
negative and the minority carriers sweep out across the junction, but the

Figure 1. Reverse recovery of a p-n rectifier diode

excess carrier concentration keeps the junction saturated, and therefore, the
same negative slope is maintained. The conduction drop decreases from t0 to
t2 due to the reduction of ohmic drop. After t2, the device sustains voltage and
the steady-state voltage appears a little after t3. From t2 to t3, the reverse
current falls quickly partly due to sweeping out and partly by recombination.
For t > t3 a negligibly small reverse leakage current flows through the diode.
The fast decay of negative current creates an inductive drop that adds to the
reverse voltage VR as shown. Owing to the difficulty of exactly locating the
point t3 at which the reverse current ceases to flow, it is conventionally taken
as the time at which the reverse current reaches 25% of its maximum value
Irrm. The reverse recovery time trr = t3 – t1 and the corresponding recovery
charge Qrr (shown by the shaded area) that are affected by the recombination
process are important parameters of a diode. For rectification of alternating
voltage, the value of trr must be small in comparison to the negative voltage
duration of the supply waveform. This is an important consideration for the
selection of a rectifier for high frequency operation. The abruptness by which
the recovery current falls to zero determines the peak voltage boost Vrrm,
which is usually larger than VR. The voltage may be destructive and can be
softened by an external network, known as a snubber, connected in parallel
with the diode.

To simplify calculations, the reverse recovery current waveform is often

simplified by two straight-line segments. During the interval from t1 to t2 (length
tA = t2 – t1) the reverse current is assumed to rise linearly from 0 to Irrm. During
the next interval from t2 to t3 (length tB = t3 – t2) it is assumed to decrease
linearly to 0. Under this assumption, the reverse recovery charge is given by

Qrr = ½ ( tA + tB) Irrm = ½ trr Irrm

The ratio tB / tA, termed as the softness factor, S is indicative of the

abruptness (or softness) of the recovery process. Smaller the value of S,
larger is the value of the overshoot voltage Vrrm compared to the applied
reverse voltage VR. If S ¢ 1, the diode is said to be an abrupt recovery diode.
On the other hand, if S /1, the diode is said to be a soft recovery diode. In
the latter variety the additional voltage stress due to reverse recovery is less
pronounced. Such diodes are preferred in high frequency rectification
applications.

The instantaneous power dissipation pD in the diode, specially in the

interval from t 2 to t3 , is of special importance. Since the diode terminal voltage
and terminal current are both negative in this interval, pD is positive here and
has a large peak. The integral of pD in this interval, εrr represents the energy
that is converted to heat in every reverse recovery. Corresponding to an ac
supply frequency of f, the average power loss due to reverse recovery Prr(av) is
therefore given by
Prr(av) = f εrr
It can be recalled here that the average forward conduction loss in a
diode is independent of frequency. Under the assumption that other losses in
a diode are negligible, the reverse recovery loss may become a predominant
loss at high frequencies and this may become a major factor in selection of a
rectifier diode at high frequencies. At low frequencies up to a few hundred
hertz, the reverse recovery time and reverse recovery loss are of no
importance.

Semiconductor junction diodes are usually classified under two types:

Standard or slow-recovery (or General purpose) diodes for which trr value is
not specified. The other type is the fast-recovery type where trr and Qrr are
reduced by minority carrier lifetime control that enhances the recombination
process. The reverse recovery time of such diodes is usually less than 500
ns. By using advanced techniques, diodes with trr < 100 ns can also be
fabricated. Such diodes are termed as ultra-fast recovery diodes and are used
in high frequency (> 200 kHz) power converter applications.