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experiment
Major Student ID Grade Group Name date Due date
융합전자공학부 2016024666 8 하피주딘 14/5/2018 14/5/2018
1. Theor y
BJT is a type of transistor. It is a three-terminal device constructed of doped semiconductor material and may be used
in amplifying or switching applications. Bipolar transistors are so named because their operation involves both
electrons and holes, as opposed to unipolar transistors, such as field-effect transistors, in which only one carrier type
A junction transistor consists of a silicon crystal in which n type of semiconductor is sandwiched between two p type
semiconductor, is called p-n-p transistor. Alternatively, transistor in which p type semiconductor is sandwiched in
between n type semiconductor is called n-p-n type bipolar junction transistor. Three portions of transistors are known
Small changes in the voltage applied across the base–emitter terminals cause the current that flows between the
emitter and the collector to change significantly. This effect can be used to amplify the input voltage or current. BJTs
o Current flow from emitter can be showed as current tied to two terminals
o Current is controlled by the voltage different between base and emitter, VBE
• Early Assumption
o When VBE < VCE , the base-emitter is forward biased and the base-collector junction is reverse biased.
o With above condition is true, we say that device is in the “forward active region”
• Current Flow
o D1 has current flow but D2 doesn’t, hence this implies that device can’t operate as a voltage-controlled
current source
o
• Improvising the early assumption
o In the forward-biased BE junction, the electron flows from the base to the emitter and holes is injected
from the base to the emitter. Current in emitter is larger than base, hence doping concentration in emitter
o Base region is thin, most of the electron reach the BC depletion region and experience the built-in electric
field
o The electrons are swept into the collector region and absorbed by the power source positive terminal
o Reverse-biased CB junction carries a current because minority carrier are “injected” into its depletion
region
• Collector current
electron at x2
o △n(x1):
o IC:
o Base current supply holes for both reverse injection into emitter and recombination with the electron
o Summarize everything
2. Experiment
1. Set up the circuit like the figure shown in the above picture.
2. In Fig. 4-1, fix V CC at 12V and change V sig from 0 to 12V with 1V steps. Measure V BE , I C and I B and record
4. Base on Table 4-1, determine the current gain α and β in the forward active region and the saturation region,
and record them in Table 4-2. Compare with the device datasheet
5. Fix V sig at 6V and change V CC from 0 to 12V with 1V steps. Measure V CE , I C and I B , and record them in
Multisim Simulation
3. Prediction of result
(1)
Table 10-1
(2)
(3)
Operation Region IB IC IE B a
(4)