UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR

PNP EXPITAXIAL SILICON

TRANSISTOR

DESCRIPTION
The UTC D45H2 is a general purpose power application
and switching.

FEATURE 1
*Low Collector-Emitter Saturation Voltage
VCE(sat)=-1v(MAX)@-15A
*Fast Switching Speeds

TO-220

1:BASE 2:COLLECTOR 3:EMITTER

ABSOLUTE MAXIMUM RATINGS(Ta=25°C)

PARAMETER SYMBOL VALUE UNIT
Collector to Emitter Voltage VCEO -30 V
Emitter To Base Voltage VEBO -5 V
Collector Current(DC) IC -10 A
Collector Dissipation(Tc=25°C) Pc 50 W
Collector Dissipation(Ta=25°C) Pc 1.67 W
Junction Temperature Tj 150 °C
Storage Temperature Tstg -55 ~ +150 °C
*PW<=10mS,Duty Cycle<=50%

ELECTRICAL CHARACTERISTICS(Ta=25°C)
PARAMETER SYMBOL TEST CONDITIONS MIN TYP MAX UNIT
Collector Cutoff Current ICES VCE=Rated ; VCEO,VEB=0 -10 µA
Emitter Cutoff current IEBO VEB=-5V,Ic=0 1 µA
Collector Emitter Saturation VCE(SAT) IC=-10A,IB=-0.1A -1 V
Voltage
Base Emitter Saturation Voltage VBE(SAT) IC=-10A,IB=-1A -1.5 V
DC Current Gain hFE1 IC=-10A,VCE=-1V 100
Current Gain Bandwidth Product FT VCE=-10V,IC=-0.5A 40 MHZ
Output Capacitance CCB VCB=-10V,f=1MHZ 230 PF
Turn On Time ton Ic=-5A,IB=-0.5A 135 nS
Storage Time tstg IB=-0.5A 500 nS
Fall Time tf 100 nS

UTC UNISONIC TECHNOLOGIES CO. LTD 1

QW-R203-003,B
UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR
TYPICAL CHARACTERISTION
DC CURRENT GAIN
100
POWER DERATING VCE = 1V
50
POWER DISSIPATION, P D (WATTS)

TJ = 25℃
45 80

DC CURRENT GAIN, h FE
40
35
30 60
25
20 40
15
10
5 20
0
0 25 50 75 100 125 150
TEMPERATURE, Tc (℃) 0.01 0.05 0.1 0.2 0.5 1 2 5 10
COLLECTOR CURRENT, I C (AMP)

DC CURRENT GAIN "ON" VOLTAGES

200 5.0
VCE = 1V TJ = 25℃
TJ = 25℃
2.0
160
VBE(sat)@IC/IB =10
DC CURRENT CAIN, h FE

1.0
VOLTAGE, V (VOLTS)

0.5
120

0.2
80 VCE(sat)@IC/IB =10
0.1

0.05
40

0 0.01
0.01 0.05 0.1 0.2 0.5 1 2 5 10 0.1 0.2 0.5 1.0 2.0 5.0 10 20
COLLECTOR CURRENT, I C (AMP) COLLECTOR CURRENT, I C (AMP)

FORWARD BIAS SAFE OPERATING AREA

TC<70℃
20 Duty Cycle<50%
COLLECTOR CURRENT, I C (Amp)

10

5.0

2.0 DC

1.0
1μs
0.5 10μs
D45H1,2 100μs
D45H4,5
0.2 D45H7,8,9 1ms
D45H10,11,12
0.1
1 2 5 10 20 50 100
COLLECTOR EMITTER VOLTAGE, V CE (VOLTS)

UTC UNISONIC TECHNOLOGIES CO. LTD 2

QW-R203-003,B
UTC D45H2 PNP EXPITAXIAL SILICON TRANSISTOR

UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.

UTC UNISONIC TECHNOLOGIES CO. LTD 3

QW-R203-003,B