Ec 2003

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GATE SOLVED PAPER - EC

2003
Q. 1-30 Carry One Mark Each

Q. 1 The minimum number of equations required to analyze the circuit shown in the
figure is
et
.n
ng
ri
ee
(A) 3
(C) 6
in (B) 4
(D) 7
Sol. 1
ng
Hence (B) is correct option.
ye
Number of loops = b - n + 1
= minimum number of equation
as
Number of branches = b = 8
Number of nodes = n = 5
.E
Minimum number of equation
= 8-5+1 = 4
Q. 2 w
A source of angular frequency 1 rad/sec has a source impedance consisting
w
of 1 W resistance in series with 1 H inductance. The load that will obtain the
w
maximum power transfer is
(A) 1 W resistance
(B) 1 W resistance in parallel with 1 H inductance
(C) 1 W resistance in series with 1 F capacitor
(D) 1 W resistance in parallel with 1 F capacitor
Sol. 2 For maximum power transfer
ZL = ZS* = Rs - jXs
Thus ZL = 1 - 1j
Hence (C) is correct option.
Q. 3 A series RLC circuit has a resonance frequency of 1 kHz and a quality factor
Q = 100 . If each of R, L and C is doubled from its original value, the new Q of
the circuit is
(A) 25 (B) 50
(C) 100 (D) 200
Sol. 3 Hence (B) is correct option.
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GATE SOLVED PAPER - EC 2003
Q = 1 L
R C
When R, L and C are doubled,
Q' = 1 2L = 1 L =Q
2R 2C 2R C 2
Thus Q' = 100 = 50
2
t
The Laplace transform of i (t) is given by
Q. 4
I (s) =
e 2
s (1 + s)
n
(A) 0
g.
At t " 3, The value of i (t) tends to
(B) 1
(C) 2
in (D) 3
Sol. 4
er
From the Final value theorem we have
e
lim i (t) = lim sI (s) = lim s 2 = lim 2 =2
s " 0 s (1 + s) s " 0 (1 + s)
n
t"3 s"0
gi
Hence (C) is correct answer
The differential equation for the current i (t) in the circuit of the figure is
n
Q. 5
ye
as
.E
w
2 2
(A) 2 d 2i + 2 di + i (t) = sin t (B) d 2i + 2 di + 2i (t) = cos t
dt dt dt dt
w2
(C) 2 d 2i + 2 di + i (t) = cos t
2
(D) d 2i + 2 di + 2i (t) = sin t
wdt dt dt dt
Sol. 5 Applying KVL we get,
di (t) 1
sin t = Ri (t) + L + # i (t) dt
dt C
di (t)
or sin t = 2i (t) + 2 + # i (t) dt
dt
Differentiating with respect to t , we get
2di (t) 2d2 i (t)
cos t = + + i (t)
dt dt2
Q. 6 n -type silicon is obtained by doping silicon with
(A) Germanium (B) Aluminium
(C) Boron (D) Phosphorus
Sol. 6 Pentavalent make n -type semiconductor and phosphorous is pentavalent.
Hence option (D) is correct.
Q. 7 The Bandgap of silicon at 300 K is
(A) 1.36 eV (B) 1.10 eV
(C) 0.80 eV (D) 0.67 eV

Sol. 7 Hence option (B) is correct.

For silicon at 0 K Eg0 = 1.21 eV
At any temperature
EgT = Eg0 - 3.6 # 10 -4 T
At T = 300 K,
Eg300 = 1.21 - 3.6 # 10 - 4 # 300 = 1.1 eV
This is standard value, that must be remembered.
Q. 8 The intrinsic carrier concentration of silicon sample at 300 K is 1.5 # 1016 /m 3
. If after doping, the number of majority carriers is 5 # 1020 /m 3 , the minority
carrier density is
(A) 4.50 # 1011/m 3
et (B) 3.333 # 10 4 /m 3
(C) 5.00 # 1020 /m 3

.n (D) 3.00 # 10 - 5 /m 3
Sol. 8 By Mass action law
ng
ri
np = ni2
2
e
16
p = ni = 1.5 # 10 # 120.5 # 1016 = 4.5 # 1011
n
e
5 # 10
n
Hence option (A) is correct.
Q. 9
gi
Choose proper substitutes for X and Y to make the following statement correct
Tunnel diode and Avalanche photo diode are operated in X bias ad Y bias
respectively
en
(A) X: reverse, Y: reverse (B) X: reverse, Y: forward
sy
(C) X: forward, Y: reverse (D) X: forward, Y: forward
a
.E
Sol. 9 Tunnel diode shows the negative characteristics in forward bias. It is used in
forward bias.
w
Avalanche photo diode is used in reverse bias.
Hence option (C) is correct.
Q. 10 w
For an n - channel enhancement type MOSFET, if the source is connected at a
w
higher potential than that of the bulk (i.e. VSB > 0 ), the threshold voltage VT of
the MOSFET will
(A) remain unchanged (B) decrease
(C) change polarity (D) increase
Sol. 10 Hence option (D) is correct.
Q. 11 Choose the correct match for input resistance of various amplifier configurations
shown below :
Configuration Input resistance
CB : Common Base LO : Low
CC : Common Collector MO : Moderate
CE : Common Emitter HI : High
(A) CB - LO, CC - MO, CE - HI
(B) CB - LO, CC - HI, CE - MO
(C) CB - MO, CC - HI, CE - LO
(D) CB - HI, CC - LO, CE - MO

Sol. 11 For the different combinations the table is as follows
CE CE CC CB
Ai High High Unity
Av High Unity High
Ri Medium High Low
Ro Medium Low High
et
Q. 12
.n
The circuit shown in the figure is best described as a
ng
ri
ee
(A) bridge rectifier (B) ring modulator
in
(C) frequency discriminator (D) voltage double
Sol. 12
doubler. ng
This circuit having two diode and capacitor pair in parallel, works as voltage
ye
Hence (D) is correct option.
Q. 13
as
If the input to the ideal comparators shown in the figure is a sinusoidal signal
of 8 V (peak to peak) without any DC component, then the output of the
.E
comparators has a duty cycle of
w
w
w
(A) 1/2
(C) 1/6
(B) 1/3
(D) 1/2
Sol. 13 If the input is sinusoidal signal of 8 V (peak to peak) then
Vi = 4 sin wt
The output of comparator will be high when input is higher than Vref = 2 V and
will be low when input is lower than Vref = 2 V. Thus the waveform for input is
shown below

From fig, first crossover is at wt1 and second crossover is at wt2 where
4 sin wt1 = 2V
Thus wt1 = sin - 1 1 = p
2 6
wt2 = p - = pp 5
6 6
5p p
-6
Duty Cycle = 6 =1
2p 3
Thus the output of comparators has a duty cycle of 1 .
3
Q. 14
et
If the differential voltage gain and the common mode voltage gain of a
n
differential amplifier are 48 dB and 2 dB respectively, then common mode
rejection ratio is
(A) 23 dB
g. (B) 25 dB
(C) 46 dB
in (D) 50 dB
Sol. 14
er
CMMR = Ad
ne Ac
or
gi
20 log CMMR = 20 log Ad - 20 log Ac
= 48 - 2 = 46 dB
n
Where Ad "Differential Voltage Gain
e
Q. 15
sy
and AC " Common Mode Voltage Gain
Generally, the gain of a transistor amplifier falls at high frequencies due to the
a
(A) internal capacitances of the device
.E
(B) coupling capacitor at the input
(C) skin effect
w
(D) coupling capacitor at the output
Sol. 15 w
The gain of amplifier is
w Ai =
- gm
gb + jwC
Thus the gain of a transistor amplifier falls at high frequencies due to the
internal capacitance that are diffusion capacitance and transition capacitance.
Q. 16 The number of distinct Boolean expressions of 4 variables is
(A) 16 (B) 256
(C) 1023 (D) 65536
Sol. 16 The number of distinct boolean expression of n variable is 22n . Thus
22 = 216 = 65536
4
Hence (D) is correct answer.

Q. 17 The minimum number of comparators required to build an 8-bits flash ADC is
(A) 8 (B) 63
(C) 255 (D) 256

Sol. 17 In the flash analog to digital converter, the no. of comparators is equal to 2n - 1,
where n is no. of bit.s
So, 2n - 1 = 28 - 1 = 255
Hence (C) is correct answer.
Q. 18 The output of the 74 series of GATE of TTL gates is taken from a BJT in
(A) totem pole and common collector configuration
(B) either totem pole or open collector configuration
et
(C) common base configuration
n
(D) common collector configuration
.
Sol. 18
ng
When output of the 74 series gate of TTL gates is taken from BJT then the
configuration is either totem pole or open collector configuration .
ri
Hence (B) is correct answer.
Q. 19
ee
Without any additional circuitry, an 8:1 MUX can be used to obtain
(A) some but not all Boolean functions of 3 variables
in
(B) all functions of 3 variables but non of 4 variables
ng
(C) all functions of 3 variables and some but not all of 4 variables
(D) all functions of 4 variables
Sol. 19
ye
A 2n: 1 MUX can implement all logic functions of (n + 1) variable without andy
as
additional circuitry. Here n = 3 . Thus a 8 : 1 MUX can implement all logic
functions of 4 variable.
.E
Here (D) is correct answer.
Q. 20 A 0 to 6 counter consists of 3 flip flops and a combination circuit of 2 input
w
gate (s). The common circuit consists of
w
(A) one AND gate (B) one OR gate
(C) one AND gate and one OR gate (D) two AND gates
Sol. 20 w
Counter must be reset when it count 111. This can be implemented by following
circuitry
Hence (D) is correct answer.

Q. 21 The Fourier series expansion of a real periodic signal with fundamental
frequency f0 is given by gp (t) = / cn e j2pf t . It is given that c3 = 3 + j5 . Then
0
c-3 is n =- 3
(A) 5 + j3 (B) - 3 - j5
(C) - 5 + j3 (D) 3 - j5
Sol. 21 Hence (D) is correct answer.
Here C3 = 3 + j5
For real periodic signal
C-k = Ck*
Thus C-3 = Ck = 3 - j5

Q. 22 Let x (t) be the input to a linear, time-invariant system. The required output is
4p (t - 2). The transfer function of the system should be
(A) 4e j4pf (B) 2e-j8pf
(C) 4e-j4pf (D) 2e j8pf
Sol. 22 Hence (C) is correct answer.
y (t) = 4x (t - 2)
Taking Fourier transform we get
Y (e j2pf ) = 4e-j2pf2 X (e j2pf ) Time Shifting property
Y (e j2pf )
or
X (e j2pf )
et
= 4e-4jpf
Thus H (e j2pf
.n ) = 4e -4jpf
Q. 23
ng
A sequence x (n) with the z -transform X (z) = z 4 + z2 - 2z + 2 - 3z-4 is applied
as an input to a linear, time-invariant system with the impulse response
ri
h (n) = 2d (n - 3) where
e
d (n) = )
e
1, n = 0
0, otherwise
(A) - 6
in
The output at n = 4 is
(B) zero
(C) 2
ng (D) - 4
Sol. 23
We have
ye
h (n) = 3d (n - 3)
or
as H (z) = 2z-3
-4
Taking z transform
.E
4 2
X (z) = z + z - 2z + 2 - 3z
Now Y (z) = H (z) X (z)
w = 2z-3 (z 4 + z2 - 2z + 2 - 3z-4)
w = 2 (z + z-1 - 2z-2 + 2z-3 - 3z-7)

Taking inverse z transform we have
w
At n = 4 ,
y (n) = 2[ d (n + 1) + d (n - 1) - 2d (n - 2)+ 2d (n - 3) - 3d (n - 7)]
y (4) = 0
Q. 24 Fig. shows the Nyquist plot of the open-loop transfer function G (s) H (s) of a
system. If G (s) H (s) has one right-hand pole, the closed-loop system is
(A) always stable

(B) unstable with one closed-loop right hand pole
(C) unstable with two closed-loop right hand poles
(D) unstable with three closed-loop right hand poles
Sol. 24 Hence (A) is correct option.
Z = P-N

N " Net encirclement of (- 1 + j0) by Nyquist plot,

P " Number of open loop poles in right hand side of s - plane
Z " Number of closed loop poles in right hand side of s - plane
Here N = 1 and P = 1
Thus Z =0
Hence there are no roots on RH of s -plane and system is always stable.
Q. 25
et
A PD controller is used to compensate a system. Compared to the
uncompensated system, the compensated system has
.n
(A) a higher type number
(C) higher noise amplification
(B) reduced damping
(D) larger transient overshoot
Sol. 25
ng
PD Controller may accentuate noise at higher frequency. It does not effect the type
ri
of system and it increases the damping. It also reduce the maximum overshoot.
e
Q. 26
ne
The input to a coherent detector is DSB-SC signal plus noise. The noise at the
detector output is
gi
(A) the in-phase component (B) the quadrature - component
Sol. 26
(C) zero
en (D) the envelope

The input is a coherent detector is DSB - SC signal plus noise. The noise at the
sy
detector output is the in-phase component as the quadrature component nq (t) of
the noise n (t) is completely rejected by the detector.
a
Hence (A) is correct option.
Q. 27
.E
The noise at the input to an ideal frequency detector is white. The detector
w
is operating above threshold. The power spectral density of the noise at the
output is
w
(A) raised - cosine (B) flat
Sol. 27
w
(C) parabolic (D) Gaussian
The noise at the input to an ideal frequency detector is white. The PSD of noise
at the output is parabolic
Q. 28 At a given probability of error, binary coherent FSK is inferior to binary
coherent PSK by.
(A) 6 dB (B) 3 dB
(C) 2 dB (D) 0 dB
Pe = 1 erfc c Ed
2h m
We have
2
Since Pe of Binary FSK is 3 dB inferior to binary PSK
Q. 29 The unit of 4# H is
(A) Ampere (B) Ampere/meter
(C) Ampere/meter 2 (D) Ampere-meter
Sol. 29 By Maxwells equations
4# H = 2D + J
2t

Thus 4# H has unit of current density J that is A/m2

Hence (C) is correct option
Q. 30 The depth of penetration of electromagnetic wave in a medium having
conductivity s at a frequency of 1 MHz is 25 cm. The depth of penetration at a
frequency of 4 MHz will be
(A) 6.25 dm (B) 12.50 cm
(C) 50.00 cm (D) 100.00 cm
We know that d \ 1
e
ft
Thus d2 =
d1
.n f1
f2
d2 =
ng 1
25
ri 4
e
or d2 = 1 # 25 = 12.5 cm
4
ne
i
Q.31-90 Carry Two Marks Each
g
Q. 31
en
Twelve 1 W resistance are used as edges to form a cube. The resistance between
two diagonally opposite corners of the cube is
(A) 5 W
6
sy (B) 1 W
(C) 6 W
a (D) 3 W
.E
5 2
Sol. 31 For current i there is 3 similar path. So current will be divide in three path
w
w
w
so, we get
Vab - b i # 1l - b i # 1l - b 1 # 1l = 0
3 6 3
Vab = R = 1 + 1 + 1 = 5 W
eq
i 3 6 3 6
Q. 32 The current flowing through the resistance R in the circuit in the figure has the
form P cos 4t where P is

(A) (0.18 + j0.72) (B) (0.46 + j1.90)

(C) - (0.18 + j1.90) (D) - (0.192 + j0.144)
Sol. 32
et
Data are missing in question as L1 &L2 are not given
.n
The circuit for Q. 33 & 34 is given below.
ng
Assume that the switch S is in position 1 for a long time and thrown to position
2 at t = 0 .
ri
ee
in
ng
ye
Q. 33
(A) - V
2R
as
At t = 0+ , the current i1 is
(B) - V
R
.E
(C) - V
4R
(D) zero
Sol. 33
w
Data are missing in question as L1 &L2 are not given
Q. 34
w
I1 (s) and I2 (s) are the Laplace transforms of i1 (t) and i2 (t) respectively. The
w
equations for the loop currents I1 (s) and I2 (s) for the circuit shown in the figure,
after the switch is brought from position 1 to position 2 at t = 0 , are
R + Ls + Cs1 - Ls I1 (s) V
(A) > 1 H= G == G
s
- Ls R + Cs I2 (s) 0
R + Ls + Cs1 - Ls I1 (s) - Vs
(B) > 1 H= G == G
- Ls R + Cs I2 (s) 0
R + Ls + Cs1 - Ls I1 (s) - Vs
(C) > 1 H= G == G
- Ls R + Ls + Cs I2 (s) 0
R + Ls + Cs1 - Cs I1 (s) V
(D) > 1 H= G == G
s
- Ls R + Ls + Cs I2 (s) 0
Sol. 34 At t = 0 - circuit is in steady state. So inductor act as short circuit and capacitor
act as open circuit.

At t = 0 - , i1 (0 -) = i2 (0 -) = 0
vc (0 -) = V
At t = 0+ the circuit is as shown in fig. The voltage across capacitor and
current in inductor can’t be changed instantaneously. Thus
et
At t = 0+ ,
.n i1 = i2 =- V
2R
ng
Q. 35
ri
An input voltage v (t) = 10 2 cos (t + 10c) + 10 5 cos (2t + 10c) V is applied
ee
to a series combination of resistance R = 1 W and an inductance L = 1 H. The
resulting steady-state current i (t) in ampere is
in
(A) 10 cos (t + 55c) + 10 cos (2t + 10c + tan-1 2)
(B) 10 cos (t + 55c) + 10 23 cos (2t + 55c)
ng
(C) 10 cos (t - 35c) + 10 cos (2t + 10c - tan-1 2)
e
(D) 10 cos (t - 35c) + cos (2t - 35c)
3
2
Sol. 35
sy
Hence (C) is correct option
a
v (t) = 10 2 cos (t + 10c) + 10 5 cos (2t + 10c)
1 4444 2 4444 3 1 4444 4 2 4444 43
.E
v1 v2
Thus we get w1 = 1 and w2 = 2
Now
w Z1 = R + jw1 L = 1 + j1
Z2 = R + jw2 L = 1 + j2
w v (t) v (t)
i (t) = 1 + 2
w =
Z1 Z2
10 2 cos (t + 10c) 10 5 cos (2t + 10c)
+
1+j 1 + j2
10 2 cos (t + 10c) 10 5 cos (2t + 10c)
= +
12 + 22 + tan-1 1 12 + 22 tan-1 2
10 2 cos (t + 10c) 10 5 cos (2t + 10c)
= +
2 + tan-1 45c 5 tan-1 2
i (t) = 10 cos (t - 35c) + 10 cos (2t + 10c - tan-1 2)
Q. 36 The driving point impedance Z (s) of a network has the pole-zero locations as
shown in the figure. If Z (0) = 3 , then Z (s) is

3 (s + 3) 2 (s + 3)
(A) 2
(B) 2
s + 2s + 3 s + 2s + 2
3 (s + 3) 2 (s - 3)
(C) (D)
s2 + 2s + 2 s 2 - 2s - 3
Zeros =- 3
et
Pole1 =- 1 + j
Pole 2 =- 1 - j
.n
Z (s) =
K (s + 3)
(s + 1 + j)( s + 1 - j)
ng =
K (s + 3)
=
K (s + 3)
ri (s + 1) 2 - j2 (s + 1) 2 + 1
From problem statement Z (0) w = 0 = 3
2
ee
Thus 3K = 3 and we get K = 2
in 2 (s + 3)
Z (s) = 2
s + 2s + 2
Q. 37
ng
The impedance parameters z11 and z12 of the two-port network in the figure are
ye
as
.E
w
(A) z11 = 2.75 W and z12 = 0.25 W
(C) z11 = 3 W and z12 = 0.25 W
(B) z11 = 3 W and z12 = 0.5 W
(D) z11 = 2.25 W and z12 = 0.5 W
w
w
Sol. 37 Using 3- Y conversion
R1 = 2 # 1 = 2 = 0. 5
2+1+1 4
R2 = 1 # 1 1
= = 0.25
2+1+1 4
R3 = 2 # 1 = 0.5
2+1+1
Now the circuit is as shown in figure below.

Now z11 = V1 = 2 + 0.5 + 0.25 = 2.75

I1 I2 = 0
z12 = R3 = 0.25
Q. 38 An n -type silicon bar 0.1 cm long and 100 mm2 i cross-sectional area has a
majority carrier concentration of 5 # 1020 /m 2 and the carrier mobility is 0.13
m2 /V-s at 300 K. If the charge of an electron is 1.5 # 10 - 19 coulomb, then the
resistance of the bar is
(A) 106 Ohm (B) 10 4 Ohm
(C) 10 - 1 Ohm (D) 10 - 4 Ohm
Sol. 38
et
Hence option (A) is correct.
rl
We that
.n
R = , r = 1 and a = nqun
A s
ng
From above relation we have
1
ri
R =
nqmn A
0.1 # 10 - 2
ee = 20 - 19
5 # 10 # 1.6 # 10 # 0.13 # 100 # 10 - 12
= 106 W
n
The electron concentration in a sample of uniformly doped n -type silicon at 300
Q. 39
gi
K varies linearly from 1017 /cm 3 at x = 0 to 6 # 1016 /cm 3 at x = 2mm . Assume
a situation that electrons are supplied to keep this concentration gradient
en
constant with time. If electronic charge is 1.6 # 10 - 19 coulomb and the diffusion
constant Dn = 35 cm 2 /s, the current density in the silicon, if no electric field is
(A) zero
sy
present, is
(B) -112 A/cm 2
a
(C) +1120 A/cm 2 (D) -1120 A/cm 2
Sol. 39
.E
w dn = 6 # 1016 - 1017
dx 2 # 10 - 4 - 0
w =- 2 # 1020
Now
w Jn = nqme E + Dn q dn
dx
Since no electric field is present, E = 0 and we get
So, Jn = qDn dn
dx
= 1.6 # 10 - 19 # 35 # (- 2 # 1020) =- 1120 A/cm 2
Q. 40 Match items in Group 1 with items in Group 2, most suitably.
Group 1 Group 2
P. LED 1. Heavy doping
Q. Avalanche photo diode 2. Coherent radiation
R. Tunnel diode 3. Spontaneous emission
S. LASER 4. Current gain
(A) P - 1, Q - 2, R - 4, S - 3
(B) P - 2, Q - 3, R - 1, S - 4
(C) P - 3 Q - 4, R - 1, S - 2
(D) P - 2, Q - 1, R - 4, S - 3

Sol. 40 LED works on the principal of spontaneous emission.

In the avalanche photo diode due to the avalanche effect there is large current
gain.
Tunnel diode has very large doping.
LASER diode are used for coherent radiation.
Q. 41 At 300 K, for a diode current of 1 mA, a certain germanium diode requires a
et
forward bias of 0.1435 V, whereas a certain silicon diode requires a forward bias
of 0.718 V. Under the conditions state above, the closest approximation of the
(A) 1
.n
ratio of reverse saturation current in germanium diode to that in silicon diode is
(B) 5
(C) 4 # 10 3
ng (D) 8 # 103
Sol. 41
ri
I = Io è h V - 1j
e
V D1
We know that T
e
si
where h = 1 for germanium and h = 2 silicon. As per question
n
Io è e - 1j = Io è hV - 1j
V V
i
Dsi DGe
hVT
n Ge T
or
ng Io
si
Io
=
VDsi
VDGe
0.718
- 1 = e 2 # 26 # 10 - 1 = 4 103
e hVT
0.1435
e 26 # 10 - 1
-3
#
e
si
-1e hVT -3
Q. 42
sy
A particular green LED emits light of wavelength 5490 Ac. The energy bandgap
of the semiconductor material used there is
a
(Plank’s constant = 6.626 # 10 - 34 J - s )
.E
(A) 2.26 eV (B) 1.98 eV
(C) 1.17 eV (D) 0.74 eV
Sol. 42
w
Hence option (A) is correct
w -34 8
Eg = hc = 6.626 # 10 # -310# 10 = 3.62 J
l
w
54900 # 10
Eg (J) -19
In eV Eg (eV) = = 3.62 # 10-19 = 2.26 eV
e 1.6 # 10
Alternatively
Eg = 1.24 eV = 1.24 = 2.26 eV
l (mm) 5490 # 10-4 mm
Q. 43 When the gate-to-source voltage (VGs) of a MOSFET with threshold voltage of
400 mV, working in saturation is 900 mV, the drain current is observed to be
1 mA. Neglecting the channel width modulation effect and assuming that the
MOSFET is operating at saturation, the drain current for an applied VGS of
1400 mV is
(A) 0.5 mA (B) 2.0 mA
(C) 3.5 mA (D) 4.0 mA
Sol. 43 We know that
ID = K (VGS - VT ) 2
2
Thus ID2 = (VGS2 - VT )
ID1 (VGS1 - VT ) 2
Substituting the values we have

2
ID2 = (1.4 - 0.4) = 4
ID1 (0.9 - 0.4) 2
or ID2 = 4IDI = 4 mA
Q. 44 If P is Passivation, Q is n -well implant, R is metallization and S is source/
drain diffusion, then the order in which they are carried out in a standard n -
well CMOS fabrication process, is
(A) P - Q - R - S (B) Q - S - R - P
(C) R - P - S - Q (D) S - R - Q - P
Sol. 44
e
(i) n - well implant (Q)t
In n -well CMOS fabrication following are the steps :
.n
(ii) Source drain diffusion (S)
g
(iii) Metalization (R)
n
(iv) Passivation (P)
i
Hence option (B) is correct.
r
Q. 45
ee
An amplifier without feedback has a voltage gain of 50, input resistance of 1 k
W and output resistance of 2.5 kW. The input resistance of the current-shunt
0.2, is
in
negative feedback amplifier using the above amplifier with a feedback factor of
(A) 1 kW
11
ng (B) 1 kW
5
(C) 5 kW
ye (D) 11 kW
Sol. 45
as
We have Ri = 1kW, b = 0.2, A = 50
Thus,
.E Rif = Ri
(1 + Ab)
= 1 kW
11
Q. 46
w
In the amplifier circuit shown in the figure, the values of R1 and R2 are such
w
that the transistor is operating at VCE = 3 V and IC = 1.5 mA when its b is
w
150. For a transistor with b of 200, the operating point (VCE , IC ) is
(A) (2 V, 2 mA) (B) (3 V, 2 mA)

(C) (4 V, 2 mA) (D) (4 V, 1 mA)
Sol. 46 The DC equivalent circuit is shown as below. This is fixed bias circuit operating
in active region.

In first case
t
VCC - IC1 R2 - VCE1 = 0
or
or
ne
6 - 1.5mR2 - 3 = 0
R2 = 2kW
g. IB1 = IC1 = 1.5m = 0.01 mA

b1 150
in
In second case IB2 will we equal to IB1 as there is no in R1.
Thus
er IC2 = b2 IB2 = 200 # 0.01 = 2 mA
e
VCE2 = VCC - IC2 R2 = 6 - 2m # 2 kW = 2 V
n
i
Q. 47
ng
The oscillator circuit shown in the figure has an ideal inverting amplifier. Its
frequency of oscillation (in Hz) is
ye
as
.E
w
(A) w 1 (B) 1
(2pRC)
(C) w
(2p 6 RC)
1
( 6 RC)
(D) 6
(2pRC)
Sol. 47 The given circuit is a R - C phase shift oscillator and frequency of its oscillation
is
f = 1
2p 6 RC
Q. 48 The output voltage of the regulated power supply shown in the figure is
(A) 3 V (B) 6 V
(C) 9 V (D) 12 V

Sol. 48 If we see th figure we find that the voltage at non-inverting terminal is 3 V by the
zener diode and voltage at inverting terminal will be 3 V. Thus Vo can be get by
applying voltage division rule, i.e.
20 V = 3
20 + 40 o
or V0 = 9 V
Q. 49 The action of JFET in its equivalent circuit can best be represented as a
(A) Current controlled current source
(B) Current controlled voltage source
et
(C) Voltage controlled voltage source
n
(D) Voltage controlled current source
.
Sol. 49
ng
For a JFET in active region we have
IDS = IDSS c1 - VGS m
2
ri VP
current source.
ee
From above equation it is clear that the action of a JFET is voltage controlled
n
i
Q. 50
ng
If the op-amp in the figure is ideal, the output voltage Vout will be equal to
ye
as
.E
(A) 1 Vw (B) 6 V
w
(C) 14 V (D) 17 V
Sol. 50 w
The circuit is as shown below
V+ = 8 (3) = 8 kW
1+8 3
8
V+ = V- = V
3
Now applying KCL at inverting terminal we get
V- - 2 + V- - Vo = 0
1 5
or Vo = 6V- - 10

= 6 # 8 - 10 = 6 V
3
Q. 51 Three identical amplifiers with each one having a voltage gain of 50, input
resistance of 1 kW and output resistance of 250 W are cascaded. The opened
circuit voltages gain of the combined amplifier is
(A) 49 dB (B) 51 dB
Sol. 51
(C) 98 dB
et (D) 102 dB
The equivalent circuit of 3 cascade stage is as shown in fig.
.n
ng
ri
ee
in 1k
ng V2 =
1k + 0.25k
1k
50V1 = 40V1
e
Similarly V3 = 50V2 = 40V2
1k + 0.25k
or
sy V3 = 40 # 40V1
a
Vo = 50V3 = 50 # 40 # 40V1
AV = Vo = 50 # 40 # 40 = 8000
.E
or
V1
w
or 20 log AV = 20 log 8000 = 98 dB
Q. 52 w
An ideal sawtooth voltages waveform of frequency of 500 Hz and amplitude 3
w
V is generated by charging a capacitor of 2 mF in every cycle. The charging
requires
(A) Constant voltage source of 3 V for 1 ms
(B) Constant voltage source of 3 V for 2 ms
(C) Constant voltage source of 1 mA for 1 ms
(D) Constant voltage source of 3 mA for 2 ms
Sol. 52 If a constant current is made to flow in a capacitor, the output voltage is integration
of input current and that is sawtooth waveform as below :
t
VC = 1 # idt
C 0
The time period of wave form is
T = 1 = 1 = 2 m sec
f 500
20 # 10
-3
1
6 #
Thus 3= idt
2 # 10 0
or i (2 # 10 - 3 - 0) = 6 # 10 - 6
or i = 3 mA
Thus the charging require 3 mA current source for 2 msec.
Hence (D) is correct option

Q. 53 The circuit in the figure has 4 boxes each described by inputs P, Q, R and
outputs Y, Z with Y = P 5 Q 5 R and Z = RQ + PR + QP
The circuit acts as a
et
.n
(A) 4 bit adder giving P + Q
(B) 4 bit subtractor giving P - Q
g
(C) 4 bit subtractor giving Q-P
n
i
(D) 4 bit adder giving P + Q + R
r
Sol. 53
We have
ee
Y = P5Q5R
in Z = RQ + PR + QP
ng
Here every block is a full subtractor giving P - Q - R where R is borrow. Thus
circuit acts as a 4 bit subtractor giving P - Q .
Q. 54
ye
If the function W, X, Y and Z are as follows
as
W = R + PQ + RS X = PQRS + PQRS + PQRS
Y = RS + PR + PQ + P .Q Z = R + S + PQ + P .Q .R + PQ .S
.E
Then,
(A) W = Z, X = Z (B) W = Z, X = Y
w
(C) W = Y (D) W = Y = Z
Sol. 54
w
Hence (A) is correct answer.
w
W = R + PQ + RS
X = PQRS + PQRS + PQRS
Y = RS + PR + PQ + PQ
= RS + PR $ PQ $ PQ
= RS + (P + R )( P + Q)( P + Q)
= RS + (P + PQ + PR + QR )( P + Q)
= RS + PQ + QR (P + P ) + QR
= RS + PQ + QR
Z = R + S + PQ + PQR + PQS
= R + S + PQ $ PQR $ PQS
= R + S + (P + Q )( P + Q + R)( P + Q + S)
= R + S + PQ + PQ + PQS + PR + PQR
+ PRS + PQ + PQS + PQR + QRS
= R + S + PQ + PQS + PR + PQR + PRS
+ PQS + PQR + QRS

= R + S + PQ (1 + S) + PR (1 + P ) + PRS
+ PQS + PQR + QRS
= R + S + PQ + PR + PRS + PQS
+ PQR + QRS
= R + S + PQ + PR (1 + Q ) + PQS + QRS
= R + S + PQ + PR + PQS + QRS
Thus W = Z and X = Z
Q. 55
et
A 4 bit ripple counter and a bit synchronous counter are made using flip flops
.n
having a propagation delay of 10 ns each. If the worst case delay in the ripple
counter and the synchronous counter be R and S respectively, then
ng
(A) R = 10 ns, S = 40 ns (B) R = 40 ns, S = 10 ns
ri
(C) R = 10 ns S = 30 ns (D) R = 30 ns, S = 10 ns
Sol. 55
ee
Propagation delay of flip flop is
tpd = 10 nsec
in
Propagation delay of 4 bit ripple counter
ng R = 4tpd = 40 ns
and in synchronous counter all flip-flop are given clock simultaneously, so
ye S = tpd = 10 ns
Q. 56
as
The DTL, TTL, ECL and CMOS famil GATE of digital ICs are compared in
.E
the following 4 columns
w
(P) (Q) (R) (S)
Fanout is minimum DTL DTL TTL CMOS
w
Power consumption is TTL CMOS ECL DTL
w minimum
Propagation delay is CMOS ECL TTL TTL
minimum
The correct column is
(A) P (B) Q
(C) R (D) S
Sol. 56 The DTL has minimum fan out and CMOS has minimum power consumption.
Propagation delay is minimum in ECL.
Q. 57 The circuit shown in the figure is a 4 bit DAC

The input bits 0 and 1 are represented by 0 and 5 V respectively. The OP AMP
t
is ideal, but all the resistance and the 5 v inputs have a tolerance of !10%. The
e
specification (rounded to nearest multiple of 5%) for the tolerance of the DAC is
n
(A) !35% (B) !20%
(C) !10%
g. (D) !5%
Sol. 57
in
erVo =- V1 :R bo + R b1 + R b2 + R b 3D
R 2R 4R 4R
ne
Exact value when V1 = 5 , for maximum output
VoExact =- 5 :1 + 1 + 1 + 1 D =- 9.375
gi
Maximum Vout due to tolerance
2 4 8
en Vo max =- 5.5 :110 + 110 + 110 + 110 D

90 2 # 90 4 # 90 8 # 90
sy =- 12.604
a
Tolerance = 34.44% = 35%
.E
The circuit shown in figure converts
Q. 58
w
w
w
(A) BCD to binary code (B) Binary to excess - 3 code

(C) Excess -3 to gray code (D) Gray to Binary code
Sol. 58 Hence (D) is correct answer.
Let input be 1010; output will be 1101
Let input be 0110; output will be 0100
Thus it convert gray to Binary code.
Q. 59 In the circuit shown in the figure, A is parallel-in, parallel-out 4 bit register,
which loads at the rising edge of the clock C . The input lines are connected to a
4 bit bus, W . Its output acts at input to a 16 # 4 ROM whose output is floating
when the input to a partial table of the contents of the ROM is as follows

Data 0011 1111 0100 1010 1011 1000 0010 1000
Address 0 2 4 6 8 10 11 14
The clock to the register is shown, and the data on the W bus at time t1 is 0110.
The data on the bus at time t2 is
et
.n
ng
ri
ee
in
ng
ye
as
.E
w
w
(A) 1111 (B) 1011
w
(C) 1000 (D) 0010
Sol. 59 After t = t1, at first rising edge of clock, the output of shift register is 0110, which
in input to address line of ROM. At 0110 is applied to register. So at this time
data stroed in ROM at 1010 (10), 1000 will be on bus.
When W has the data 0110 and it is 6 in decimal, and it’s data value at that add
is 1010
then 1010 i.e. 10 is acting as odd, at time t2 and data at that movement is 1000.
Q. 60 In an 8085 microprocessor, the instruction CMP B has been executed while the
content of the accumulator is less than that of register B . As a result
(A) Carry flag will be set but Zero flag will be reset
(B) Carry flag will be rest but Zero flag will be set
(C) Both Carry flag and Zero flag will be rest
(D) Both Carry flag and Zero flag will be set
Sol. 60 CMP B & Compare the accumulator content with context of Register B
If A < R CY is set and zero flag will be reset.

Q. 61 Let X and Y be two statistically independent random variables uniformly

distributed in the ranges (- 1, 1) and (- 2, 1) respectively. Let Z = X + Y . Then
the probability that (z #- 1) is
(A) zero (B) 1
6
(C) 1 (D) 1
3 12
Sol. 61 The pdf of Z will be convolution of pdf of X and pdf of Y as shown below.
z
Now p [Z # z] = #- 3 fZ (z) dz
-2
p [Z #- 2] = #- 3fZ (z) dz
et
= Area [z #- 2]
.n
= 1 # 1 #1 = 1
2 6 12
ng
ri
ee
in
ng
ye
as
.E
w
w
w
Q. 62 Let P be linearity, Q be time-invariance, R be causality and S be stability. A
discrete time system has the input-output relationship,
x (n) n$1
y (n) = *0, n= 0
x (n + 1) n # - 1
where x (n) is the input and y (n) is the output. The above system has the
properties
(A) P, S but not Q, R (B) P, Q, S but not R
(C) P, Q, R, S (D) Q, R, S but not P
Sol. 62 System is non causal because output depends on future value
For n # 1 y (- 1) = x (- 1 + 1) = x (0)
y (n - n0) = x (n - n0 + 1) Time varying
y (n) = x (n + 1) Depends on Future
i.e. y (1) = x (2) None causal

For bounded input, system has bounded output. So it is stable.

y (n) = x (n) for n $ 1
= 0 for n = 0
= x (x + 1) for n #- 1
So system is linear.
Common data for Q 63 & 64 :

et
.n
g
The system under consideration is an RC low-pass filter (RC-LPF) with R = 1 k
n
W and C = 1.0 m F.
ri
Q. 63
ee
Let H (f) denote the frequency response of the RC-LPF. Let f1 be the highest
frequency such that 0 # f # f1
H (f1)
$ 0.95 . Then f1 (in Hz) is
(A) 324.8
in H (0)
(B) 163.9
Sol. 63
(C) 52.2
ng
The frequency response of RC-LPF is
(D) 104.4
ye H (f) = 1
1 + j2pfRC
Now
as H (0) = 1
H (f1)
= 1 $ 0.95
.E
H (0) 1 + 4p2 f12 R2 C2
or 1 + 4p2 f12 R2 C2 # 1.108
or w 4p2 f12 R2 C2 # 0.108
or w 2pf1 RC # 0.329
or w f1 # 0.329
2pRC
or f1 # 0.329
2pRC
or f1 # 0.329
2p1k # 1m
or f1 # 52.2 Hz
Thus f1 max = 52.2 Hz
Q. 64 Let tg (f) be the group delay function of the given RC-LPF and f2 = 100 Hz.
Then tg (f2) in ms, is
(A) 0.717 (B) 7.17
(C) 71.7 (D) 4.505
Sol. 64 Hence (A) is correct answer
H (w) = 1
1 + jwRC
q (w) =- tan-1 wRC

dq (w) RC
tg =- =
dw 1 + w2 R2 C2
= 10-3 = 0.717 ms
1 + 4p # 10 4 # 10-6
2
65 & 66 : X (t) is a random process with a constant mean value of 2 and the auto
correlation function Rxx (t) = 4 (e - 0.2 t + 1).
Q. 65 Let X be the Gaussian random variable obtained by sampling the process at
t = ti and let
a
et
Q (a) = # - 1 e dy
3
2p
x2
2
(A) 1 - Q (0.5) .n
The probability that 6x # 1@ is
(B) Q (0.5)
(C) Q c 1 m
ng (D) 1 - Q c 1 m
Sol. 65
2 2
ri
2 2
We have
ee
RXX (t) = 4 (e - 0.2 t + 1)
n
RXX (0) = 4 (e - 0.2 0 + 1) = 8 = s2
i
or
mean
ng s = 2 2 Given
m =0
Now
ye
P (x # 1) = Fx (1)
as = 1 - Qc
X-m
s m
at x = 1
.E = 1 - Qc 1 - 0 m = 1 - Qc 1 m
2 2 2 2
w
Q. 66
w
Let Y and Z be the random variable obtained by sampling X (t) at t = 2 and
w
t = 4 respectively. Let W = Y - Z . The variance of W is
(A) 13.36 (B) 9.36
(C) 2.64 (D) 8.00
Sol. 66 Hence (C) is correct option.
W = Y-Z
E [W2] = E [Y - Z] 2
= E [Y2] + E [Z2] - 2E [YZ]
= sw2
We have E [X2 (t)] = Rx (10)
= 4 [e - 0.2 0 + 1] = 4 [1 + 1] = 8
E [Y2] = E [X2 (2)] = 8
E [Z2] = E [X2 (4)] = 8
E [YZ] = RXX (2) = 4 [e-0.2 (4 - 2) + 1] = 6.68
E [W2] = sw2 = 8 + 8 - 2 # 6.68 = 2.64

Q. 67 Let x (t) = 2 cos (800p) + cos (1400pt). x (t) is sampled with the rectangular pulse
train shown in the figure. The only spectral components (in kHz) present in the
sampled signal in the frequency range 2.5 kHz to 3.5 kHz are
(A) 2.7, 3.4

et (B) 3.3, 3.6
(C) 2.6, 2.7, 3.3, 3.4, 3.6
.n (D) 2.7, 3.3
Sol. 67
ng
The frequency of pulse train is
ri
f 1- 3 = 1 k Hz
10
ee
The Fourier Series coefficient of given pulse train is
n
-T /2
Cn = 1
#
i
o
Ae-jnw t dt o
To -T /2
g
o
-To /6
# = 1
n Ae-jhw t dt
o
To
e
-To /6
A
y = [e-jw t] --TT //66
o o
To (- jhwo) o
as = A
(- j2pn)
(e-jw t - e jhw T /6)
o o o
.E = A (e jhp/3 - e-jhp/3)
j2pn
or w Cn = A sin ` np j
pn 3
w
From Cn it may be easily seen that 1, 2, 4, 5, 7, harmonics are present and
w
0, 3, 6, 9,.. are absent. Thus p (t) has 1 kHz, 2 kHz, 4 kHz, 5 kHz, 7 kHz,...
frequency component and 3 kHz, 6 kHz.. are absent.
The signal x (t) has the frequency components 0.4 kHz and 0.7 kHz. The
sampled signal of x (t) i.e. x (t)* p (t) will have
1 ! 0.4 and 1 ! 0.7 kHz
2 ! 0.4 and 2 ! 0.7 kHz
4 ! 0.4 and 4 ! 0.7 kHz
Thus in range of 2.5 kHz to 3.5 kHz the frequency present is
2 + 0.7 = 2.7 kHz
4 - 0.7 = 3.3 kHz
Q. 68 The signal flow graph of a system is shown in Fig. below. The transfer function
C (s)/ R (s) of the system is

(A) 6 (B) 6s
s2 + 29s + 6 s2 + 29s + 6
s (s + 2) s (s + 27)
(C) 2 (D) 2
s + 29s + 6 s + 29s + 6
Sol. 68 Mason Gain Formula
Spk 3 k
T (s) =
3
In given SFG there is only forward path and 3 possible loop.
p1 = 1
31 = 1 + 3 + 24 = s + 27
et s s s
L1 = - 2 , L2 = - 24 and L3 = - 3
.n s s s
g
where L1 and L3 are non-touching
n
C (s) p1 3 1
i
This =
R (s) 1 - (loop gain) + pair of non - touching loops
er =
^ s +s27 h
1 - ^ -s3 - 24s - s2 h + -s2 . -s3
= ^
s + 27
s h
e
1 + 29s + s62
s (s + 27)
in = 2
s + 29s + 6
ng
K
Q. 69
located at
ye
The root locus of system G (s) H (s) =
s (s + 2)( s + 3)
has the break-away point
as
(A) (- 0.5, 0)
(C) (- 4, 0)
(B) (- 2.548, 0)
(D) (- 0.784, 0)
Sol. 69 We have
.E
w 1 + G (s) H (s) = 0
K
w
or 1+ =0
s (s + 2)( s + 3)
or
w K =- s (s2 + 5s2 + 6s)
dK =- (3s2 + 10s + 6) = 0
ds
which gives s = - 10 ! 100 - 72 =- 0.784, - 2.548
6
The location of poles on s - plane is
Since breakpoint must lie on root locus so s =- 0.748 is possible.

Q. 70 The approximate Bode magnitude plot of a minimum phase system is shown in
Fig. below. The transfer function of the system is

(s + 0.1) 3 (s + 0.1) 3
(A) 108
et
(s + 10) 2 (s + 100)
(B) 107
(s + 10)( s + 100)
(C)
(s + 0.1) 2
.n
(s + 10) 2 (s + 100)
(D)
(s + 0.1) 3
(s + 10)( s + 100) 2
Sol. 70
ng
The given bode plot is shown below
ri
ee
in
ng
ye
At w = 0.1 change in slope is + 60 dB " 3 zeroes at w = 0.1
as
At w = 10 change in slope is - 40 dB " 2 poles at w = 10
At w = 100 change in slope is - 20 dB " 1 poles at w = 100
.E
K ( 0s.1 + 1) 3
Thus T (s) =
( 10s + 1) 2 ( 100
s
+ 1)
Now
w 20 log10 K = 20
or
w K = 10
w
Thus T (s) = s
10 ( 0s.1 + 1) 3
2 s
( 10 + 1) ( 100 + 1)
=
108 (s + 0.1) 3
(s + 10) 2 (s + 100)
Q. 71 A second-order system has the transfer function

C (s)
= 2 4
R (s) s + 4s + 4
With r (t) as the unit-step function, the response c (t) of the system is
represented by

et
.n
ng
Sol. 71
ri
The characteristics equation is
e
s2 + 4s + 4 = 0
e
Comparing with
in
s2 + 2xwn + wn2 = 0
we get
ng 2xwn = 4 and wn2 = 4
Thus
ye x =1
ts = 4 = 4 = 2
Critically damped
s
xwn 1#2
a
.E
Q. 72 The gain margin and the phase margin of feedback system with
G (s) H (s) = 8
w
are
(s + 100) 3
w
(A) dB, 0c (B) 3, 3
(C) 3, 0c (D) 88.5 dB, 3
Sol. 72 w
Q. 73 The zero-input response of a system given by the state-space equation
xo1 1 0 x1 x1 (0) 1
=xo G = =1 1G=x G and =x (0)G = =0 G is
2 2 2
tet et
(A) = G (B) = G
t t
t
e t
(C) = t G (D) = t G
te te
Sol. 73 We have
xo1 1 0 x1 x1 (0) 1
=xo G = =1 1G=x G and =x (0)G = =0 G
2 2 2
1 0
A == G
1 1
s 0 1 0 s-1 0
(sI - A) = = G - = G = =
0 s 1 1 - 1 s - 1G

(s - 1) 0 1
0
1 > H = > +1 H
-1 s-1
(sI - A) =
(s - 1) 2 + 1 (s - 1)
1
(s - 1) 2 s-1
t
e 0
L-1 [(sI - A) -1] = eAt = = t t G
te e
et 0 1 et
x (t) = eAt # [x (t0)] = = t t G= G = = t G
te e 0 te
Q. 74
et
A DSB-SC signal is to be generated with a carrier frequency fc = 1 MHz using a
non-linear device with the input-output characteristic V0 = a0 vi + a1 vi3 where a0
.n
and a1 are constants. The output of the non-linear device can be filtered by an
ng
appropriate band-pass filter.
Let Vi = Aci cos (2pfi ct) + m (t) is the message signal. Then the value of fci (in
MHz) is
ri
e
(A) 1.0 (B) 0.333
(B) 0.5
ne (D) 3.0
Sol. 74
gi
vi = Ac1 cos (2pfc t) + m (t)
en v0 = ao vi + avi3
v0 = a0 [Ac' cos (2pfc' t) + m (t)] + a1 [Ac' cos (2pfc' t) + m (t)] 3
sy = a0 Ac' cos (2pfc' t) + a0 m (t) + a1 [(Ac' cos 2pfc' t) 3
a + (Ac' cos (2pfc') t) 2 m (t) + 3Ac' cos (2pfc' t) m2 (t) + m3 (t)]
.E
+ 3a1 Ac'2 ;
= a0 Ac' cos (2pfc' t) + a0 m (t) + a1 (Ac' cos 2fc' t) 3
1 + cos (4pfc' t)
Em (t)
w 2
w = 3a1 Ac' cos (2pfc' t) m2 (t) + m3 (t)
w
The term 3a1 Ac' ( cos 42pf t ) m (t) is a DSB-SC signal having carrier frequency 1.
'
c
MHz. Thus 2fc' = 1 MHz or fc' = 0.5 MHz
Common Data for Question 75 & 76 :

Let m (t) = cos [(4p # 103) t] be the message signal &
c (t) = 5 cos [(2p # 106 t)] be the carrier.
Q. 75 c (t) and m (t) are used to generate an AM signal. The modulation index of the
Total sideband power
generated AM signal is 0.5. Then the quantity is
Carrier power
(A) 1 (B) 1
2 4
(C) 1 (D) 1
3 8
Sol. 75 Hence (D) is correct option.
2
PT = Pc c1 + a m
2
2 P (0.5) 2
Psb = Pc a = c
2 2

or Psb = 1
Pc 8
Q. 76 c (t) and m (t) are used to generated an FM signal. If the peak frequency
deviation of the generated FM signal is three times the transmission bandwidth
of the AM signal, then the coefficient of the term cos [2p (1008 # 103 t)] in the
FM signal (in terms of the Bessel coefficients) is
(A) 5J4 (3) (B) 5 J8 (3)
2
5
(C) J8 (4) (D) 5J4 (6)
2
Sol. 76 Hence (D) is correct option.
AM Band width = 2fm
et
.n
Peak frequency deviation = 3 (2fm) = 6fm
6f
ng
Modulation index b = m = 6
fm
/ ri
The FM signal is represented in terms of Bessel function as
3
ee xFM (t) = Ac
n =- 3
Jn (b) cos (wc - nwn) t
wc + nwm = 2p (1008 # 103)
in
2p106 + n4p # 103 = 2p (1008 # 103), n = 4
g
Thus coefficient = 5J4 (6)
n
e
Q. 77 Choose the correct one from among the alternative A, B, C, D after matching an
Group 1
sy
item in Group 1 with most appropriate item in Group 2.
Group 2
a
P. Ring modulator 1. Clock recovery
.E
Q. VCO 2. Demodulation of FM
R. Foster-Seely discriminator 3. Frequency conversion
w
S. Mixer 4. Summing the two inputs
5. Generation of FM
w 6. Generation of DSB-Sc
w
(A) P - 1; Q - 3; R - 2; S - 4
(C) P - 6; Q - 1; R - 3; S - 2
(B) P - 6; Q = 5; R - 2; S - 3
(D) P - 5; Q - 6; R - 1; S - 3
Ring modulation $ Generation of DSB - SC
VCO $ Generation of FM
Foster seely discriminator $ Demodulation of fm
mixer $ frequency conversion
Q. 78 A superheterodyne receiver is to operate in the frequency range 550 kHz - 1650
kHz, with the intermediate frequency of 450 kHz. Let R = Cmax /Cmin denote
the required capacitance ratio of the local oscillator and I denote the image
frequency (in kHz) of the incoming signal. If the receiver is tuned to 700 kHz,
then
(A) R = 4.41, I = 1600 (B) R = 2.10, I - 1150
(C) R = 3.0, I = 600 (D) R = 9.0, I = 1150

fmax = 1650 + 450 = 2100 kHz

fmin = 550 + 450 = 1000 kHz
or f = 1
2p LC
frequency is minimum, capacitance will be maximum
f2
R = Cmax = max = (2.1) 2
Cmin 2
fmin
or
et
R = 4.41
fi = fc + 2fIF = 700 + 2 (455) = 1600 kHz
Q. 79
.n
A sinusoidal signal with peak-to-peak amplitude of 1.536 V is quantized into
(A) 0.768 V
ng
128 levels using a mid-rise uniform quantizer. The quantization-noise power is
(B) 48 # 10 - 6 V2
(B) 12 # 10 - 6 V2
ri (D) 3.072 V
Sol. 79
ee
2mp
in Step size d =
L
= 1.536 = 0.012 V
128
g 2
Quantization Noise power = d =
n 12
(0.012) 2
12
ye = 12 # 10-6 V2
Q. 80
as
If Eb , the energy per bit of a binary digital signal, is 10 - 5 watt-sec and the
one-sided power spectral density of the white noise, N0 = 10 - 6 W/Hz, then the
.E
output SNR of the matched filter is
(A) 26 dB (B) 10 dB
w
(C) 20 dB (D) 13 dB
Sol. 80
w
Eb = 10 - 6 watt-sec
w No = 10 - 5 W/Hz
(SNR) matched filler = Eo

= 106 = .05
N
2
o
2 # 10 - 5
(SNR)dB = 10 log 10 (0.05) = 13 dB
Q. 81 The input to a linear delta modulator having a step-size 3= 0.628 is a sine
wave with frequency fm and peak amplitude Em . If the sampling frequency
fx = 40 kHz, the combination of the sine-wave frequency and the peak
amplitude, where slope overload will take place is
Em fm
(A) 0.3 V 8 kHz
(B) 1.5 V 4 kHz
(C) 1.5 V 2 kHz
(D) 3.0 V 1 kHz
3 fs
For slopeoverload to take place Em $
2pfm
This is satisfied with Em = 1.5 V and fm = 4 kHz

Q. 82 If S represents the carrier synchronization at the receiver and r represents the

bandwidth efficiency, then the correct statement for the coherent binary PSK is
(A) r = 0.5, S is required (B) r = 1.0, S is required
(C) r = 0.5, S is not required (D) r = 1.0, S is not required
If s " carrier synchronization at receiver
r " represents bandwidth efficiency
then for coherent binary PSK r = 0.5 and s is required.
Q. 83 A signal is sampled at 8 kHz and is quantized using 8 - bit uniform quantizer.
with a bit rate of R is

et
Assuming SNRq for a sinusoidal signal, the correct statement for PCM signal
.n
(A) R = 32 kbps, SNRq = 25.8 dB (B) R = 64 kbps, SNRq = 49.8 dB
ng
(C) R = 64 kbps, SNRq = 55.8 dB (D) R = 32 kbps, SNRq = 49.8 dB
Sol. 83
ri
Bit Rate = 8k # 8 = 64 kbps
e
(SNR)q = 1.76 + 6.02n dB
e
n
= 1.76 + 6.02 # 8 = 49.8 dB
Q. 84
gi
Medium 1 has the electrical permittivity e1 = 1.5e0 farad/m and occupies the
region to the left of x = 0 plane. Medium 2 has the electrical permittivity
en
e2 = 2.5e0 farad/m and occupies the region to the right of x = 0 plane. If E1 in
medium 1 is E1 = (2ux - 3uy + 1uz ) volt/m, then E2 in medium 2 is
sy
(A) (2.0ux - 7.5uy + 2.5uz ) volt/m (B) (2.0ux - 2.0uy + 0.6uz ) volt/m
a
(C) (2.0ux - 3.0uy + 1.0uz ) volt/m (D) (2.0ux - 2.0uy + 0.6uz ) volt/m
.E
Sol. 84
We have E1 = 2ux - 3uy + 1uz

w E1t = - 3uy + uy and E1n = 2ux
w
Since for dielectric material at the boundary, tangential component of electric
w
field are equal
E1t =- 3uy + uy = E2t (x = 0 plane)
E1n = 2ux
At the boundary the for normal component of electric field are
D1n = D2n
or e1 E1n = e2 E2n
or 1.5eo 2ux = 2.5eo E2n
or E2n = 3 ux = 1.2ux
2.5
Thus E2 = E2t + E2n =- 3uy + uz + 1.2ux
Q. 85 If the electric field intensity is given by E = (xux + yuy + zuz ) volt/m, the
potential difference between X (2, 0, 0) and Y (1, 2, 3) is
(A) + 1 volt (B) - 1 volt
(C) + 5 volt (D) + 6 volt
Sol. 85 Hence (C) is correct option.

We have E = xux + yuy + zuz

dl = utx dx + uty dy + utz dz
Y
VXY =- # E.dl
X
2 0 0
= #1 xdxutx + #2 ydyutz + #3 zdzuzt
0
2 2 y2 2 0
=-= x + +z G
et 2 1 2 2 2 3
=- 1 [22 - 12 + 02 - 22 + 02 - 32] = 5
2
Q. 86
.n
A uniform plane wave traveling in air is incident on the plane boundary
g
between air and another dielectric medium with er = 4 . The reflection
n
(A) zero
ri
coefficient for the normal incidence, is
(B) 0.5+180c
(B) 0.333+0c
ee (D) 0.333+180c
Sol. 86
in
m
ng h =
Reflection coefficient
e
ye t =
h2 - h1
h2 + h1
as
Substituting values for h1 and h2 we have
.E
mo m0
-
t = eo er
mo
eo
mo
= 1- er = 1 - 4 since er = 4
eo er + eo 1+ er 1+ 4
w = - 1 = 0.333+180c
3
Q. 87
w
If the electric field intensity associated with a uniform plane electromagnetic
w
wave traveling in a perfect dielectric medium is given by E (z, t)
= 10 cos (2p107 t - 0.1pz) V/m, then the velocity of the traveling wave is
(A) 3.00 # 108 m/sec (B) 2.00 # 108 m/sec
(C) 6.28 # 107 m/sec (D) 2.00 # 107 m/sec
We have E (z, t) = 10 cos (2p # 107 t - 0.1pz)
where w = 2p # 107 t
b = 0.1p
7
Phase Velocity u = w = 2p # 10 = 2 # 108 m/s
b 0.1p
Q. 88 A short - circuited stub is shunt connected to a transmission line as shown in
fig. If Z0 = 50 ohm, the admittance Y seen at the junction of the stub and the
transmission line is

et
(A) (0.01 - j0.02) mho
.n (B) (0.02 - j0.01) mho
ng
(C) (0.04 - j0.02) mho (D) (0.02 + j0) mho
i
The fig of transmission line is as shown below .
Sol. 88
We know that
er [Z + jZo tan bl]
Zin = Zo L
[Zo + jZL tan bl]
ne
For line 1, l = l and b = 2p , ZL1 = 100W
2 l
Thus
gi Zin1 = Zo
[ZL + jZo tan p]
[Zo + jZL tan p]
= ZL = 100W
en
For line 2, l = l and b = 2p , ZL2 = 0 (short circuit)
8 l
Thus
sy Zin2 = Zo
[0 + jZo tan p4 ]
[Zo + 0]
= jZo = j50W
a Y = 1 + 1 = 1 + 1 = 0.01 - j0.02
.E Zin1 Zin2 100 j50
w
w
w

Q. 89 A rectangular metal wave guide filled with a dielectric material of relative
permittivity er = 4 has the inside dimensions 3.0 cm # 1.2 cm. The cut-off
frequency for the dominant mode is
(A) 2.5 GHz (B) 5.0 GHz
(C) 10.0 GHz (D) 12.5 GHz

8
u = c = 3 # 10 = 1.5 # 108
e0 2
In rectangular waveguide the dominant mode is TE10 and
fC = v ` m j2 + ` n j2
2 a b
8
1. 5 10 1 2 0 2 1.5 # 108
= ` 0.03 j + ` b j = 0.06 = 2.5 GHz
#
2
Q. 90
et
Two identical antennas are placed in the q = p/2 plane as shown in Fig.
The elements have equal amplitude excitation with 180c polarity difference,
.n
operating at wavelength l. The correct value of the magnitude of the far-zone
resultant electric field strength normalized with that of a single element, both
g
computed for f = 0 , is
n
ri
ee
in
ng
(A) 2 cos b 2ps l
l
(B) 2 sin b 2ps l
l
ye
(C) 2 cos a ps k
l
(D) 2 sin a ps k
l
Sol. 90
as
.E
y
Normalized array factor = 2 cos
2
w y = bd sin q cos f + d
q = 90c,
w d = 2 s,
w f
d
= 45c,
= 180c
y bd sin q cos f + d
Now 2 cos = 2 cos ; E
2 2
= 2 cos 8 2p 2 s cos 45c + 180 B
l. 2 2
p p
= 2 cos 8 + 90cB = 2 sin ` s j
s
l l

Answer Sheet
1. (B) 19. (D) 37. (A) 55. (B) 73. (C)
2. (C) 20. (D) 38. (A) 56. (B) 74. (C)
3. (B) 21. (D) 39. (D) 57. (A) 75. (D)
4. (C) 22. (C) 40. (C) 58. (D) 76. (D)
5. (C) 23. (B) 41. (C) 59. (C) 77. (B)
6. (D) 24. (A) 42. (A) 60. (A) 78. (A)
7.
8.
(B)
(A)
25.
26.
(C)
(A)
et43.
44.
(D)
(B)
61.
62.
(D)
(A)
79.
80.
(C)
(D)
9. (C) 27. (C)
.n 45. (A) 63. (C) 81. (B)
10. (D) 28. (B)
ng 46. (A) 64. (A) 82. (A)

11.
12.
(B)
(D)
29.
30.
(C)
r
(B)i 47.
48.
(A)
(C)
65.
66.
(D)
(C)
83.
84.
(B)
(C)
13. (B) 31.
ee
(A) 49. (B) 67. (D) 85. (C)
n
14. (C) 32. (*) 50. (B) 68. (D) 86. (D)
15. (B) 33.
gi (*) 51. (C) 69. (D) 87. (B)
n
16. (D) 34. (A) 52. (D) 70 (A) 88. (A)
17.
18.
(C)
(B)
35.
36.
ye (C)
(B)
53.
54.
(B)
(A)
71
72
(B)
(B)
89.
90.
(A)
(D)
as
.E
w
w
w

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Q. 1-30 Carry One Mark Each

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Sol. 7 Hence option (B) is correct.

(C) 5.00 # 1020 /m 3

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Sol. 11 For the different combinations the table is as follows

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Hence (D) is correct answer.

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Hence (D) is correct answer.

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w = 2 (z + z-1 - 2z-2 + 2z-3 - 3z-7)

(A) always stable

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N " Net encirclement of (- 1 + j0) by Nyquist plot,

en (D) the envelope

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Thus 4# H has unit of current density J that is A/m2

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(A) (0.18 + j0.72) (B) (0.46 + j1.90)

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Now z11 = V1 = 2 + 0.5 + 0.25 = 2.75

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Sol. 40 LED works on the principal of spontaneous emission.

where h = 1 for germanium and h = 2 silicon. As per question

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(A) (2 V, 2 mA) (B) (3 V, 2 mA)

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g. IB1 = IC1 = 1.5m = 0.01 mA

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en Vo max =- 5.5 :110 + 110 + 110 + 110 D

(A) BCD to binary code (B) Binary to excess - 3 code

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