Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
Professor
University of Tehran
Faculty of Engineering
Department of Electrical & Computer Eng.
North Kargar Ave.Tehran, Iran
Phone: (+9821) 61114329, (+980912 147 3209
Fax: (+9821) 88692457
P.O.Box: 14395-515 Tehran Iran
E mail: mfathi@ut.ac.ir
Green card holder
Date: Aug 2017
Ph.D.: Electrical Engineering, Colorado State University, Ft. Collins,Colorado, U.S.A
Education M.Sc.: Electrical Engineering, Colorado State University, Ft. Collins,Colorado, U.S.A
Publications
Book Chapter
Journal Papers
69. Farrokh Payam and M. Fathipour, “Effect of Tip Mass on Modal Flexural
Sensitivity of Rectangular AFM Cantilevers to Surface Stiffness Variation”
Imaging and Microscopy, 2011 DOI: 10.1007/s13369-013-6682-2
70. V. Fathipour, S. Fathipour, M. Fathipour and M. A. Malakotian, “Device
Simulation of a Novel Strained Silicon Channel RF LDMOS Microelectronic
Engineering”, Elsevier, vol 94, p. 29-32, 2012.
71. M. Noei, M. Moradinasab and M. Fathipour, “A Computational Study of Balistic
Graphene Nanoribbon Field Effect Transistors”, Physica E, Elsevier 2011. DOI:
10.1016/j.physe.2011.12.018.
72. A. Yazdanpanah, M. Pourfath, M. Fathipour, H. Kosina and S. Selberherr, “Device
Performance of Graphene Nanoribbon Field Effect Transistors in the Presence of
Line-Edge Roughness”, IEEE Transactions on Electron Devices. Vol. 59, Issue 12,
pp. 3527-3532, 2012.
73. A. Yazdanpanah, M. Pourfath, M. Fathipour, H. Kosina and S. Selberherr, “A
Numerical Study of Line-Edge Roughness Scattering in Graphene Nano-Ribbons”,
IEEE Transactions on Electron Devices, Vol. 59, No 2, P433-440. 2012.
74. F. Karimi, H. Ghanatian and M. Fathipour, “The Impact of Structural Parameters
on the Electrical Characteristics of Silicon NanoWire Transistor Based on NEGF
Corresponding”, Journal of Nanoscience and Nantechnology. J. of Nanoscience
and Nanotechnology Vol. 12, pp 1-5, 2012.
75. R. Hosseini, M. Fathipour and R. Faez, “Performance Evaluation of Source
Hetrojunction Strained Channel GAA Nanowire Transistor “, Modern Physics
Letter B, Vol 26, No 12, P 1250076-1, 1250076-13, 2012.
76. M. Moradinasab, H. Nematian, M. Pourfath, M. Fathipour and H. Kosina,
“Analytical Models of Appriximations for Wave Functions and Energy Dispersion
in Zigzag Graphene Nanoribbons”, J. of Applied Physics, No. 111, P 1-10, 2012.
77. M. A. Malakoutian and M. Fathipour, “Investigation of the Carrier Concentration
and Laser Peak Intensity on the Terahertz Pulse Generated by Photoconductive
Antennas Based On LT-GaAs” Majlesi J. of Telecommunication Devices, Vol. 1,
No 1, 2012.
78. R. Hosseini, M. Fathipour and R. Faez, “A Comparative Study of NEGF and
DDMS Models in the GAA Silicon Nanowire Transistor, Int. J. of Electronics, Vol
99, Issue9, 2012. DOI: 10.1080/00207217.2012.669709.
79. V. Fathipour, S. Fathipour, M. Fathipour and M. A. Malakootian, “Device
simulation of a novel strained silicon channel RF LDMOS”,J Microelectronic
Engineering,Vol. 94, pp 29-32, 2012. DOI:10.1016/j.mee.2011.12.014
80. M. Moradinasab and M. Fathipour, “A Compact Model for Current-Voltage in
Doped Carbon Nanotube Field Effect Transistors”, J. of Iranian Association of
Electrical and Electronics Engineers, Vol. 8, N0 2, 2011.
81. A. Yazdanpanah, M. Pourfath, M. Fathipour, H. Kosina and S. Selberher, “An
Analytical Model for Line-Edge Roughness Limited Mobility of Graphene
Nanoribbons” IEEE Transactions on Electron Devices, Vol 58, No11, 2011. DOI:
10.1109/TED.2011.2163719
82. A. Farrokh Payam, M. Fathipour, “A Capillary Force Model for Interaction
between Two Spheres” Particuology, Elsevier, Vol 9, pp 381-386, 2011.
83. F. Karimi, M. Fathipour and R. Hosseini, “A Quantum Mechanical Transport
Approac to Simulation of QG Silicon Nanowire Transistor,” Nanoscience and
Nanotechnology, Vol 11, No 11, P 10476-10479, 2011.
84. S. Azimi, M. Mehran, A. Amini, A. Vali, S. Mohajerzadeh and M. Fathipour
“Formation of Three-Dimensional and Nanowall Structures on Silicon Using a
Hydrogen-Assisted High Aspect Ratio Etching” Journal of Vac. Sci. and
Technology, Vol. 28, P 1125-1131, 2010.
Conference Papers:
1. S. S. Taheri Otaghsara, M. Fathipour and B. Azizollah Ganji, “The new structure of
microship capillary electrophorosis with gated injection and high velocity,
resolution and efficiency”, ICE 2017.
2. 3. S. S. Taheri Otaghsara, B. Azizollah Ganji, M. Fathipour and S. Amoutsar”,
Simulation of cross-form geometry and gated injection in electrophoresis
microchannels by comsol”, 4th national & 2th International Conference on Applied
Research in Electrical, Mechanical& Mechatronics Engineering, 2017.
3. S. S. Taheri Otaghsara, B. Azizollah Ganji and M. Fathipour “ The new structure of
micro-channel in electrophoresis with low separation time and high resoulution and
efficiency,” 25th ICEE 2017.
4. M. Alidoosty, H. Zare and M. Fathipour, “The Effect of Insulators Permittivity and
Scaling on the SOI Based MOS Optical Modulators” ICEE 2017, accepted.
5. S. Taheri, B. A. Ganji and M. Fathipour, “A new Microchannel Design for foot
Seperation, High Resoltion High Efficiency”, ICEE 2017, (accepted for
publication).
6. M. Bashirpour, S. Ghorbani, M. R. Kolahdouz, M. Neshat, H. Hajhosseini, M.
Mansouree and M. Fathipour, “Simulation and Fabrication of Photoconductive
Antenna onLTG-GaAs for Terahertz Radiation” doi:10.1364/ACPC.2016.AS2E.4
2016.
7. M. Bashirpour, J. Poursafar, M. R. Kolahdouz, M. Neshat, H. Hajhosseini and M.
Fathipour, “Terahertz photoconductive antenna on LT-GaAs power improvement by
use of nano-plasmonic structure”, EMRS 2016. Accepted.
8. M. Mousavi and M. Fathipour, “A contactless conductivity detector for detection of
biomolecules and chemical compounds,” microfluidics conference, Feb 2016.
9. M. Iranmanesh and M. Fathipour, “A micro channel network for mixing blood
plasma using a centrifugal microfluidic device”, Microfluidics Conference, Feb
2016.
10. R. Toutouni, A. A. Ebadi, S. Alirezaei and M. Fathipour, “A microfluidics active
valve based on direct electrosmosis”, Microfluidics Conference, Feb 2016.
11. S. Alirezaei, A. A. Ebadi, R. Toutouni and M. Fathipour, “Inners based separation
of blood from plasma in a microfluidic”, Microfluidics Conference, Feb 2016
12. Y. Movassaghi, V. Fathipour, M. Fathipour and H. Mohseni, “Analytical modeling
of shortwave-infrared electron-injection detectors”, SPIE. 2015.
13. D. Adinehloo and M. Fathipour, “Thermally-enhanced spin current in stained
ZGNRs”, ICN 2015, Aug 2015.
14. D. Adinehloo, and M. Fathipour, “Strain engineering of low-buckled two-
dimensional materials based on tight binding approach”, ICN 2015, Aug 2015.
15. Hajian and M. Fathipour, “A new method for measuring electron transport time
constant in Solar Cells” Submitted at the Eighth National Conference on
Clean Renewable and Efficient Energy, Iran, 2015.
16. M.Nayeri, M. Fathipour and A. Yzadanpanah, “Study of optical properties of
single-layer moly bdenum disulfide by tight binding method” ICOP 2016.
17. R. Hekmati, M. Neshat and M. Fathipour, “Investigation of high-and low-k Gate
dielectrics in tuning of grapheme-loaded THz antenna” ICEE 2015 23th Iranian
Con.
18. Z. Kord and M. Fathipour, “Dependence of Selfheating Effect on the Wall Angle in
AlGaN/GaN HEMT with V Shaped Gate”, IEEE 2014.
19. Y. Movassaghi, V. Fathipour, M. Fathipour and H. Mohseni, “Analytical Modeling
and Simulation of Electron Injection Detectors with High Internal Amplification and
Low Noise at Telecom Wavelength”.
20. F. P. Omidvar, J. Karamdel and M. Fathipour, “Optimization of MEMs Neural
Microelectrode Thickness based on Flexibility”,
21. Z. Ahangari and M. Fathipour, “Simulation of Quantum Transport in Double
Schottkey Gate MOSFETs”, ICEE 2014.
22. M. Fathipour, P. Vahdani. Mogadam, M. Masami and H. Ghasri, “Simulation of
Noise in InSb Infra Red Detectors”, ICEE 2014.
23. H. Chenarani and M. Fathipour, “A Novel Structure for En Cut off Frequency and
Output Power in GaAs MESFETs”, ICEE 2014.
24. M. J. Mohammadzamani and M. Fathipour, “AnInvestigation of Highly Scaled III-
Nitride Ga-Face and N-Face HEMTs.
25. H. Agharezaaei, A. A. Orouji and M. Fathipour, “Improvement Breakdown Voltage
of GaN Based HEMT by Optimizing P-Layer Doping in the Barrier Layer”, Iran
Physsics Con. 93.
26. M. Tabatabaei, A. A. Ebadi, M. Mahmoodian, M. Imani, M. Fathipour and P. Zahedi,
“Novel Applications of a Dental Composite in UV and Soft Lithography’, 11th Int
Seminar on Polymer Science and Technology, Oct 2014.
27. P. V. Moghadam, M. Fathipour and G. Abeaiani, “The influence of bulk donor and
acceptor traps on electrical behavior of p+n photodiode based on InSb|, 8th
Symposium on Advances in Science & Technology, 2014.
28. M. Danesh, S. N. Anoushe. M. A Malakoutian and M. Fathipour, “Vandium Doped
Silicon Carbide Simulation for High Voltage Operation”, ISDRS 2013.
29. S. M. Tabatabei, K. Khaliji, M. Fathipour, Y. Abdi and S. Fathipour, A computational
study on ballistic electronic transport in group-IV armchair nanoribbon based field
effect transistors”, ISDRS 2013.
30. M. Fathipour, M. Nikofard and S. Hossieni, “Drift diodes with step recovery”, 5th
Iranian Conference on Electrical and Electronics Engineering, 2014.
31. S. Sharifi, M. Yousefi, M. Fathipour and R. S. Nadoshan,” A comparison study
between nanostructured dye sensitized solarcells with TiO2 and ZnO photo anodes,
Second international conference on new methods in energy storage, 2014.
32. P. V. Moghadam, M. Fathipour and G. Abeani, “The influence of bulk donor and
acceptor traps on electrical behavior of p+n photodiode based on InSb”, 8th sym on
advances in science & technology, 2014.
33. A. A. Ebadi, M. Hajari, M. Mahmoodian, M. Imani, M. Fathipour and P. Zahedi, “A
Novel Photoresist composition based on Multifunctional Methacrylate Monomers
for UV Lithography” IPPI 2014.
34. M. Ghorbanzadeh, M. Fathipour and M. Asad, “Dominanat dark current in InSb base
infera red detector, ICEE 2013.
35. M. Jafai, M. Imani and M. Fathipour, “A Stable and Low Power Bandgap Design
Employing Lubistar Devices in FinFET Technology”, ICEE 2013.
36. M. Jafari, M. Imani and M. Fathipour, “Employing Different Modes of Power Gating
on ARM Processors by 16nm FinFET” ICEE 2013.
37. M. Jafari, M. Imani and M. Fathipour, “A llow power, variability resilient 9T-SRAM
cell operating stable in sub and near-threshold regions using 16nm CMOS
technology” IEEE 2013.
38. M. Kazemi and M. Fathipour, “Stepped Dual Gate (ESDG) LDMOS for Improved
High Voltage Performance”, 4th Power Electronics, Drive Systems and Technologies
Conference, 2013. (Submitted).
39. H. Nematian and M. Fathipour, “AComarative Study on Hydrogen-Passivated and
Boron Nitride-Confined Graphene Superlattice-Based Photodetectors”,
40. M. Tavakoli Bina, M. Kazemi and M. Fathipour, “Stepped Dual Gate (ESDG)
LDMOS for Improved High Voltage Performance”, IEEE 2013.
41. M. Nayeri, M. Fathipour and H. Nematian, “A Proposed Structure for Reducing Bias
Voltages in Nanoscale Impact Ionization MOS Devices”, 2013.
42. M. Jafari, M. Imani and M. Fathipour, “Bottom-up Design of a High Performance
Ultra-Low Power DFT utilizing Multiple-VDD, Multiple-Vth and Gate Sizing”, IEEE
2013.
43. M. Jafari, M. Imani and M. Fathipour, “Design of a switched capacitor sample &
hold circuit using a two stage OTA with 13 ENOB and 40 MS/s in CMOS 0.18µ.
ICEE 2013.
44. S. Sharifi, M. Yousefi, M. Ftahipour and R. Sabaghi. Nadoushan”, Ihe impact of
temperature on the operation of dye sentitized solar cells with TiO2 and ZnO. ICEE
2013.
45. M. H. Bayanli, F. A. Boromand, M. R. Ftoalahi and M. Fathipour, “Quazi 3
dimensional simulation of polymer light emitting diode”, ICEE 2013.
46. M. Fathipour, H. Ghasri, M. Ghorbanzadeh and P. Vadani. Moghadam,
“Investigation of ion implantation for fabrication of In Sb based array photo
detector”, ICEE 2013.
47. T. Afra, S. N. Anouseh, A. Taghinia and M. Fathipour, “A Numerical Study of a New
Four-Layer-Substrate Closing Device”, ICEE 2013.
48. M, Fathipour, “A Switch Capacitor Based Sample & Hold Using a Powerful Two-
Stage OTA with 13 ENOB of ADC and 100 Ms/s in CMOS 45nm”, ICEE 2013.
(Submitted)
49. M. Fathipour, “An Investigation in to the Effect of Gate Length on Electrical
Characteristics of A10.25 Ga 0.75/In0.1GaGa0,9N Pseudomorphic HEMTs”, ICEE
2013. (Submitted).
50. S. M. Moniri, G. Abaeiani and M. Fathipour, “ Particle Counting of Non-
Homogeneous Particles by Laser Scattering”, TCPE 2013
51. M. Fathipour, “An Investigation of Uniformly-Doped and Delta Doped
A10.25Ga0.75N/In0.1Ga0.9N Pseudomorphic HEMTs”, ICEE 2013. (Submitted).
52. M. Zamani, M. Javad, M. Fathipour and M. Ghasemi, “An Investigation in to the
Effect of Gate Length on Electrical Characteristics of Al0.25Ga0.75N/in0.1Ga0,9N
Based HEMT. Physics 91 Con, (submitted).
53. A. Mojab, M. Fathipour, M. A. Malakoutian and M. Ghasemi, “A Compact Model
for Current in High-Frequency High-power LDMOS. Physics 91 Con, (submitted).
54. M. Pournia and M. Fathipour, “A Comprehensive COMSL Model for Surface
Acoustic Wave RFID Tags and Post Processing Method to Analyze the Interrogated
Signals of the Tags”, ISAV 2012
55. M. Noei, H. Taghinejad, M. Taghinejad and M. Fathipour, “Analysis of Bandgap and
Single Atom Vacancies in Graphene Nnaoribbon Quantum Dots Using Density of
States”, ICSE 2012 (accepted).
56. M. Noei, S. M. Tabataei and M. Fathipour, “Uniaxial Strain in Armchair Graphene
Nanoribbons and Graphene Nanoribbon Field Effect Transistors”ICAEE 2012.
(Accepted).
57. M. Ghorbanzadeh, M. Asad, V. Fathipour and M. Fathipour, “The Impact of Fixed
Oxide Charge Density on the Performance of InSb Infrared Focal Plane Arrays”,
MIOMD-XI 2012, USA.
58. A. Haghshenas and M. Fathipour, “Dependence of Self-Heating Effect on Substrate
in AlGaN/GaN HEMT Devices”, ICEE 2012.
59. M. J. Mohammadzamani, S. M. Tabatabaei and M. Fathipour, “Leakage Current
Reduction in Domino Logic”, ICEE 2012.
60. M. Noei, S. M. Tabatabaei and M. Fathipour, “Numerical Analysis of Ballistic
Ultrathin Graphene Nanoribbon Field Effect Transistors”, ICEE 2012.
61. M. Asad, M. Ghorbanzadeh, Gh. Sareminia and M. Fathipour, “Investigation of
Optimum Junction Depth of InSb Infared Phtodiode”, ICEE 2012.
62. A. Elahidoost, M. Fathipour and A. Mojab, “Modeling the Effect of 1 MeV Electron
Irradiation on the Performance Degradation of a Single Junction AlxGa1-xAs/GaAs
Solar Cell”, ICEE 2012.
63. M. S. Feali and M. Fathipour, “Optimization of Microfluidic Fuel Cells Using Active
Control of the Depleton Boundry Layers”, FuelCell 2012.
64. S. Jalili, A. Marouf and M. Fathipour, “Low-Field Phonon Limited Mobility in
Graphene Nanoribbon”, ICNS4 Conference 2012.
65. A. Yazdanpanah and M. Fathipour, “The Effect of Edge Roughness on Transport
Properties of Graphene Nanoribbons”, ICNS4 Conference 2012.
66. A. Yazdanpanah and M. Fathipour, “A Numerical Study of Line-Edge Roughness
Scattering in Graphene Nano-Ribbons”, ICNS4 Conference 2012.
67. M. Nasirifar, A. Mojab and M. Fathipour, “Increasing Breakdown Voltage and
Decreasing Self-Heater SOI-LDMOS Transistors”, ICEE 2012.
68. M. Moradinasab, M. Fathipour, H. K. Taheri, M. Pourfath and H. Kosina, “On the
Role of Stone-Wales Defects on the Performance of Graphene Nanoribbon Photo
Detectors”, Graphene Week 2012.
69. M. Moradinasab and M. Fathipour, “An Improved SPICE AC Model for Nanoscale
MOSFETs with Non-Rectangular Gate”, Spain Conference 2012.
70. A. Mojab and M. Fathipour, “The Effect of Buried Contacts Shading on the
Performance Silicon Solar Cells, ICEE 2012.
71. A. Mojab, M. Fathipour, A. Malakoutian and M. Ghasemi, “A Compact Model for
Current in High-Frequancy High-Power LDMOS Transistors”, Physics 2012.
72. M. Mohammadzamani, M. Fathipour and M. Ghasemi, “An Investigation in to the
Effect of Gate Length on Electrical Characteristics of Al0.25Ga0.75N/In0.1Ga0.9
Based HEMT’, Physics 2012.
73. M, Asad, Gh. Saremi and M. Fathipour, “Investigation of Optimum Junction Depth
of in Sb Infrared Photo”, ICEE 2012.
74. S. M. Tabatabaei, M. Noei and M. Fathipour, “Numerical Analysis of Ballistic
Untrathin Graphene Nanorit”, ICEE 2012.
75. M.Moradinasab, H. Nematian, M. Noei, M. Pourfath, M. Fathipour and H. Kosina,
“Edge Roughness Effects on the Optical Properties Zigzag Garphene Nanoribbons: A
First Principle Study”, IWCE, USA, 2012.
76. H. Nematian, M. Moradinasab, M. Noei, M. Pourfath, M. Fathipour and H.
Kosina,”A Theorical Study of BN-Confined Graphene Nanoribbon Based Resonant
Tunneling Diodes”, IWCE 2012.
77. A. Mojab and M. Fathipour, “The Effect of Buried Contacts Shading on the
Performance of the Solar Cells ICEE 2012.
78. M. Moradinasab, H. Ntmatian, M. Pourfath, M. Fathipour and H. Kosina, “Theorical
Study of Single and Bilayer Graphene Nanoribbons Photodetedtors”, the
Electrochemical Society”, 2012.
79. A. Mojab, M. Fathipour and A. Elahidoust, “The Effect of Buried Contacts Shading
on the Performance Silicon Solar Cells”, Majlesi conference on electrical
engineering, August 2012
80. M. A. Malkoutian and M. Fathipour, “ Investigation of the carrier concentration and
laser peak power on the terahertz pulse generated by photoconductive antennas based
on LT-GaAs”, Majlesi conference on electrical engineering, August 2012
81. R. Hosseini, M. Fathipour, R. Faez and M. Ghalandarzadeh, “Comparison Study of
Circuit Performance in GAA Silicon Nanowire Transistor and DG MOSFET”, Int
Con on MEMS Khoy, 2012.
82. A. Haghshenas and M. Fathipour, “Dependence of Self-Heating Effects on
Passivation Layer in AlGaN/GaN HEMT Devices, ICNS$ 2012.
83. A. Farrokh Payam and M. Fathipour, “Effect of Tip Mass on Modal Flexural
Sensitivity of Rectangular AFM Cantilevers to Surface Stiffness Variation” Multi
frequency Conference, Spain, 2011.
84. V. Fathipour, M. A. Malakoutian, S. Fathipour and M. Fathipour, “Analysis and
Design of a Novel SHOT LDMOS with Strained Si Channel”, 19th Iranian
Conference on Electrical Engineering ICEE 2011, May 17-19
85. S. Jalili and M. Fathipour, “Low-Field Acoustic Phonon Limited Mobility in GNRs”,
ISDRS 2011, Dec 7-9.
86. S. Rajabi, A. A Orouji, H. Amini and M. Fathipour, “A Novel Power High Electron
Mobility Transistor With Partial Steeped Recess in the Drain Access Region For
Performance Improvement”, ICSCCN 2011.
87. S. Rajabi, A. A Orouji, H. Amini and M. Fathipour, “A Novel Double Field-Plate
Power High Electron Mobility Transistor Based on AlGaN/GaN for Performance
Improvement”, ICSCCN 2011.
88. M. Fathipour, “Compact Modelig of LDMOS Transistor Including Ion Implanted
Channel”, Int Con on Electron Devics and Solid State Circuits, IEEE 2011.
89. P. Fazel. Hamedani, M. Fathipour,A. Taginia and F. Yazdi, “Study the Effect of
Varying the Thickness of Intermediate Band on the Intermediate Band Solar Cells
Efficiency”, ICAEE 2011.
90. A. Taghinia, M. Fathipour, P. Fazel and F. Yazdi, “Comparison of Single Junction
GaAs and Ino2ga0.8N Based Solar Cells at Various Temperatures”, ICAEE 2011
91. Sh. Shahbazi, and M. Fathipour, “A Novel LDMOS Device with Advanced-
RESURF.
92. S. Jalili, A. Marouf and M. Fathipour, “Investigation of Acoustic Phonon Scattering
in Semiconducting Armchair Graphene Nanoribbons”, ICNB 2011, Dec 28-30
93. S. Rajabi, A. A. Orouji, M. Fathipour, “AlGaN/GaN/AlGaN Double –
Heterojunction High Electron Mobility Transistor for Performance Improvement”,
IEEE India ICSCCN 2011, 13-15 Sep 2011,
94. A. Yazdanpanah, M. Pourfath, M. Fathipour, H. Kosina and S. Selberherr, “An
Analytical Model for Line-Edge Roughness Limited Mobility of Graphene
Nanoribbons”, IEEE Transactions on Electron Devices, Vol 58, No 11, November
2011.
95. A. Haghshenas and M. Fathipour, “Investigation of Self-Heating Effects in included
Field Plates Structures in AlGaN/GaNHEMT Devices”, ICNS4 2011.
96. A. Yazdanpanah and M. Fathipour, “The Effect of Edge Roughness on Transport
Properties of Graphene Nanoribbons”, Nano Korea, ICNS4, 2011.
97. R. Hosseini, M. Fathipour and R. Faez, “Channel Length Scaling and the Impact of
Exchange-Correlation Effects on the Performance of GAA SNW Transistor”,
Nanokorea 2011.
98. A. Yazdanpanah, M. Pourfath, M. Fathipour and H. Kosina, “Compact Model for the
Electronic Properties of Edge-Disordered Graphene Nanoribbons”, 12th Int.
Conference on Thermal Mechanical and Multiphysics Simulation and Experiments
in Microelectronics and Microsystems, EuroSimE 2011.
99. M. Pourfath, A. Yazdanpanah, M. Fathipour and H. Kosina,”On the Role of Line-
Edge Roughness on the Diffusion and Localization in GNRs”, IEEE 2011.
100. M. A. Malakoutian and M. Fathipour, “Terahertz Pulse Generation of
Photoconductive Antennas Based on LT-GaAs with Different Carrier Concentration
and Laser Peak Power”, Majlesi Conference, Iran 2011.
101. H. Godazgar, M. K. Moravej Farshi and M. Fathipour, “IMOS Transistor with
Graded Energy Band”, ICEE 2012.
102. V. Fathipour, A. Mojab, M. A. Malakoutian, S. Fathipour and M. Fathipour, “The
Impact of Processes Parameter Variations on the Electrical Characteristics of a
RESURE LDMOS and its Compact Modeling”, ISDRS 2011, IEEE.
103. M. Fathipour, A. Haghshenas and A. Mojab, “Dependence of Self Heating Effect on
Passivation Layer in ALGa/GaN HEMT Devices”, ISDRS 2011, IEEE.