Irfb3306Pbf Irfs3306Pbf Irfsl3306Pbf: V 60V R Typ. 3.3M: Max. 4.2M I 160A C I 120A

IRFB3306PbF
IRFS3306PbF
IRFSL3306PbF
Applications HEXFET® Power MOSFET
l High Efficiency Synchronous Rectification in SMPS D VDSS 60V
l Uninterruptible Power Supply
RDS(on) typ. 3.3m:
4.2m:
l High Speed Power Switching
l Hard Switched and High Frequency Circuits
max.
G ID (Silicon Limited) 160A c
Benefits
l Improved Gate, Avalanche and Dynamic dV/dt S ID (Package Limited) 120A
Ruggedness
l Fully Characterized Capacitance and Avalanche D D
D
SOA
l Enhanced body diode dV/dt and dI/dt Capability
S
l Lead-Free D
S D D
S
G G G
l RoHS Compliant, Halogen-Free
TO-220AB D2Pak TO-262
IRFB3306PbF IRFS3306PbF IRFSL3306PbF
G D S
Gate Drain Source
Standard Pack
Base Part Number Package Type Orderable Part Number
Form Quantity
IRFB3306PbF TO-220 Tube 50 IRFB3306PbF
IRFSL3306PbF TO-262 Tube 50 IRFSL3306PbF
Tube 50 IRFS3306PbF
IRFS3306PbF D2Pak Tape and Reel Left 800 IRFS3306TRLPbF
Tape and Reel Right 800 IRFS3306TRRPbF
Absolute Maximum Ratings

Symbol Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 160c
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V (Silicon Limited) 110c
A
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Wire Bond Limited) 120
IDM Pulsed Drain Current d 620
PD @TC = 25°C Maximum Power Dissipation 230 W
Linear Derating Factor 1.5 W/°C
VGS Gate-to-Source Voltage ± 20 V
dv/dt Peak Diode Recovery f 14 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range
°C
Soldering Temperature, for 10 seconds 300
(1.6mm from case)
Mounting torque, 6-32 or M3 screw x
10lb in (1.1N m) x
Avalanche Characteristics
EAS (Thermally limited) Single Pulse Avalanche Energy e 184 mJ
IAR Avalanche Current d See Fig. 14, 15, 22a, 22b, A
EAR Repetitive Avalanche Energy g mJ
Thermal Resistance
Symbol Parameter Typ. Max. Units
RθJC Junction-to-Case k ––– 0.65
RθCS Case-to-Sink, Flat Greased Surface , TO-220 0.50 –––
RθJA Junction-to-Ambient, TO-220 k ––– 62
°C/W
RθJA Junction-to-Ambient (PCB Mount) , D2Pak jk ––– 40
1 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback April 24, 2014
IRFB3306PbF/IRFS3306PbF/IRFSL3306PbF
Static @ TJ = 25°C (unless otherwise specified)

Symbol Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 60 ––– ––– V VGS = 0V, ID = 250μA
ΔV(BR)DSS/ΔTJ Breakdown Voltage Temp. Coefficient ––– 0.07 ––– V/°C Reference to 25°C, ID = 5mA d
RDS(on) Static Drain-to-Source On-Resistance ––– 3.3 4.2 mΩ VGS = 10V, ID = 75A g
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS, ID = 150μA
IDSS Drain-to-Source Leakage Current ––– ––– 20 μA VDS = 60V, VGS = 0V
––– ––– 250 VDS = 48V, VGS = 0V, TJ = 125°C
IGSS Gate-to-Source Forward Leakage ––– ––– 100 nA VGS = 20V
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
RG Internal Gate Resistance ––– 0.7 ––– Ω
Dynamic @ TJ = 25°C (unless otherwise specified)
gfs Forward Transconductance 230 ––– ––– S VDS = 50V, ID = 75A
Qg Total Gate Charge ––– 85 120 nC ID = 75A
Qgs Gate-to-Source Charge ––– 20 ––– VDS =30V
Qgd Gate-to-Drain ("Miller") Charge ––– 26 VGS = 10V g
Qsync Total Gate Charge Sync. (Qg - Qgd) ––– 59 ––– ID = 75A, VDS =0V, VGS = 10V
td(on) Turn-On Delay Time ––– 15 ––– ns VDD = 30V
tr Rise Time ––– 76 ––– ID = 75A
td(off) Turn-Off Delay Time ––– 40 ––– RG = 2.7Ω
tf Fall Time ––– 77 ––– VGS = 10V g
Ciss Input Capacitance ––– 4520 ––– pF VGS = 0V
Coss Output Capacitance ––– 500 ––– VDS = 50V
Crss Reverse Transfer Capacitance ––– 250 ––– ƒ = 1.0MHz, See Fig. 5
Coss eff. (ER) Effective Output Capacitance (Energy Related) ––– 720 ––– VGS = 0V, VDS = 0V to 48V i, See Fig. 11
Coss eff. (TR) Effective Output Capacitance (Time Related) ––– h 880 ––– VGS = 0V, VDS = 0V to 48V h
Diode Characteristics
IS Continuous Source Current ––– ––– 160 c A MOSFET symbol D
(Body Diode) showing the

ISM Pulsed Source Current ––– ––– 620 A integral reverse G
(Body Diode) d p-n junction diode.

S
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 75A, VGS = 0V g
trr Reverse Recovery Time ––– 31 ns TJ = 25°C VR = 51V,
––– 35 TJ = 125°C IF = 75A
Qrr Reverse Recovery Charge ––– 34 nC TJ = 25°C di/dt = 100A/μs g
––– 45 TJ = 125°C
IRRM Reverse Recovery Current ––– 1.9 ––– A TJ = 25°C
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Calculated continuous current based on maximum allowable junction ISD ≤ 75A, di/dt ≤ 1400A/μs, VDD ≤ V(BR)DSS, TJ ≤ 175°C.
temperature. Bond wire current limit is 120A. Note that current Pulse width ≤ 400μs; duty cycle ≤ 2%.
limitations arising from heating of the device leads may occur with Coss eff. (TR) is a fixed capacitance that gives the same charging time
some lead mounting arrangements. as Coss while VDS is rising from 0 to 80% VDSS .
Repetitive rating; pulse width limited by max. junction Coss eff. (ER) is a fixed capacitance that gives the same energy as
temperature. Coss while VDS is rising from 0 to 80% VDSS.
Limited by TJmax, starting TJ = 25°C, L = 0.04mH When mounted on 1" square PCB (FR-4 or G-10 Material). For recom
RG = 25Ω, IAS = 96A, VGS =10V. Part not recommended for use mended footprint and soldering techniques refer to application note #AN-994.
above this value. Rθ is measured at TJ approximately 90°C
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
ID, Drain-to-Source Current (A)

8.0V 8.0V
6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
4.8V 4.8V
BOTTOM 4.5V BOTTOM 4.5V
100 100
4.5V
4.5V
≤ 60μs PULSE WIDTH ≤ 60μs PULSE WIDTH

Tj = 25°C Tj = 175°C
10 10
0.1 1 10 100 0.1 1 10 100
VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)
Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.5
ID = 75A
RDS(on) , Drain-to-Source On Resistance

VGS = 10V
ID, Drain-to-Source Current(Α)
100 2.0
TJ = 175°C
(Normalized)
10 1.5
TJ = 25°C
1
1.0
VDS = 25V
≤ 60μs PULSE WIDTH
0.1
0.5
2.0 3.0 4.0 5.0 6.0 7.0 8.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
VGS, Gate-to-Source Voltage (V)
TJ , Junction Temperature (°C)
Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature
8000 20
VGS = 0V, f = 1 MHZ ID= 75A
Ciss = Cgs + Cgd, Cds SHORTED
VDS = 48V
VGS, Gate-to-Source Voltage (V)
Crss = Cgd
16 VDS= 30V
6000 Coss = Cds + Cgd
VDS= 12V
C, Capacitance (pF)
Ciss 12
4000
8
2000 4
Coss
Crss
0
0
0 20 40 60 80 100 120 140
1 10 100
QG Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance vs. Drain-to-Source Voltage Fig 6. Typical Gate Charge vs. Gate-to-Source Voltage
1000 10000
OPERATION IN THIS AREA
LIMITED BY R DS (on)

ISD, Reverse Drain Current (A)
1000
100
TJ = 175°C
1msec 100μsec
100
10
TJ = 25°C
10msec
10
1
1 Tc = 25°C
Tj = 175°C DC
VGS = 0V Single Pulse
0.1 0.1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 0.1 1 10 100
VSD, Source-to-Drain Voltage (V) VDS, Drain-toSource Voltage (V)
Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area
Forward Voltage
V(BR)DSS , Drain-to-Source Breakdown Voltage

180 80
ID = 5mA
160
Limited By Package
140
ID, Drain Current (A)
120 70
100
80
60 60
40
20
0 50
25 50 75 100 125 150 175 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
T C , Case Temperature (°C) TJ , Junction Temperature (°C)

Fig 9. Maximum Drain Current vs. Fig 10. Drain-to-Source Breakdown Voltage
Case Temperature
1.5 800
EAS, Single Pulse Avalanche Energy (mJ)
I D
TOP 13A
18A
600 BOTTOM 96A
1.0
Energy (μJ)
400
0.5
200
0.0 0
0 10 20 30 40 50 60 25 50 75 100 125 150 175
VDS, Drain-to-Source Voltage (V) Starting TJ, Junction Temperature (°C)
Fig 11. Typical COSS Stored Energy Fig 12. Maximum Avalanche Energy Vs. DrainCurrent
D = 0.50
0.20
Thermal Response ( ZthJC )
0.1
0.10
0.05
0.02
0.01 R1 R2
0.01
τJ
R1 R2
Ri (°C/W) τι (sec)
τC
τJ
τ1
τ1
τ2 0.249761 0.00028
τ2
Ci= τi/Ri 0.400239 0.005548

0.001 SINGLE PULSE C
( THERMAL RESPONSE )
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.0001
1E-006 1E-005 0.0001 0.001 0.01 0.1
t1 , Rectangular Pulse Duration (sec)
Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

100
Duty Cycle = Single Pulse Allowed avalanche Current vs avalanche
pulsewidth, tav, assuming ΔTj = 150°C and
0.01 Tstart =25°C (Single Pulse)
Avalanche Current (A)
0.05
10 0.10
Allowed avalanche Current vs avalanche

pulsewidth, tav, assuming ΔΤ j = 25°C and
Tstart = 150°C.
1
1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 1.0E-01
tav (sec)
Fig 14. Typical Avalanche Current vs.Pulsewidth

200 Notes on Repetitive Avalanche Curves , Figures 14, 15:
TOP Single Pulse (For further info, see AN-1005 at www.irf.com)
BOTTOM 1% Duty Cycle 1. Avalanche failures assumption:
ID = 96A
EAR , Avalanche Energy (mJ)
160 Purely a thermal phenomenon and failure occurs at a temperature far in

excess of Tjmax. This is validated for every part type.
2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded.
3. Equation below based on circuit and waveforms shown in Figures 16a, 16b.
120
4. PD (ave) = Average power dissipation per single avalanche pulse.
5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase
during avalanche).
80 6. Iav = Allowable avalanche current.
7. ΔT = Allowable rise in junction temperature, not to exceed Tjmax (assumed as
25°C in Figure 14, 15).
40 tav = Average time in avalanche.
D = Duty cycle in avalanche = tav ·f
ZthJC(D, tav) = Transient thermal resistance, see Figures 13)
0
25 50 75 100 125 150 175 PD (ave) = 1/2 ( 1.3·BV·Iav) = DT/ ZthJC
Iav = 2DT/ [1.3·BV·Zth]
Starting TJ , Junction Temperature (°C)
EAS (AR) = PD (ave)·tav
Fig 15. Maximum Avalanche Energy vs. Temperature
4.5 16
ID = 1.0A
VGS(th) Gate threshold Voltage (V)
4.0 ID = 1.0mA
ID = 250μA 12
3.5
ID = 150μA
IRRM - (A)
3.0
8
2.5
2.0 IF = 30A
4
VR = 51V
1.5 TJ = 125°C
TJ = 25°C
1.0 0
-75 -50 -25 0 25 50 75 100 125 150 175 100 200 300 400 500 600 700 800 900 1000
TJ , Temperature ( °C ) dif / dt - (A / μs)
Fig 16. Threshold Voltage Vs. Temperature Fig. 17 - Typical Recovery Current vs. dif/dt
16 350
300
12
250
QRR - (nC)
IRRM - (A)
200
8
150
IF = 45A 100 IF = 30A

4
VR = 51V VR = 51V
TJ = 125°C 50 TJ = 125°C
TJ = 25°C TJ = 25°C
0 0
100 200 300 400 500 600 700 800 900 1000 100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs) dif / dt - (A / μs)
Fig. 18 - Typical Recovery Current vs. dif/dt Fig. 19 - Typical Stored Charge vs. dif/dt
350
300
250
QRR - (nC)
200
150
100 IF = 45A
VR = 51V
50 TJ = 125°C
TJ = 25°C
0
100 200 300 400 500 600 700 800 900 1000
dif / dt - (A / μs)
Fig. 20 - Typical Stored Charge vs. dif/dt

Driver Gate Drive

P.W.
D.U.T P.W.
Period D=
Period
+
VGS=10V*
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
- • Low Leakage Inductance D.U.T. ISD Waveform
Current Transformer
+
Reverse
Recovery Body Diode Forward
-
+ Current Current
- di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
RG • dv/dt controlled by RG VDD Re-Applied

• Driver same type as D.U.T. + Voltage Body Diode Forward Drop
• I SD controlled by Duty Factor "D" - Inductor Current
Inductor Curent
• D.U.T. - Device Under Test
Ripple ≤ 5% ISD
* VGS = 5V for Logic Level Devices

Fig 21. Peak Diode Recovery dv/dt Test Circuit for N-Channel
HEXFET® Power MOSFETs
V(BR)DSS
15V
tp
L DRIVER
VDS
RG D.U.T +
V
- DD
IAS A
VGS
20V
tp 0.01Ω
I AS
Fig 22a. Unclamped Inductive Test Circuit Fig 22b. Unclamped Inductive Waveforms
LD
VDS VDS
90%
+
VDD -
D.U.T 10%
VGS VGS
Pulse Width < 1μs
Duty Factor < 0.1% td(on) tr td(off) tf
Fig 23a. Switching Time Test Circuit Fig 23b. Switching Time Waveforms
Current Regulator Id
Same Type as D.U.T. Vds
Vgs
50KΩ
12V .2μF
.3μF
+
V
D.U.T. - DS
Vgs(th)
VGS
3mA
IG ID
Current Sampling Resistors Qgs1 Qgs2 Qgd Qgodr
Fig 24a. Gate Charge Test Circuit Fig 24b. Gate Charge Waveform
TO-220AB Package Outline

Dimensions are shown in millimeters (inches)
TO-220AB Part Marking Information
INTERNATIONAL PART NUMBER INTERNATIONAL PART NUMBER

RECTIFIER LOGO RECTIFIER LOGO
ASSEM BLY
IRFB3306
PYWW?
DATE CODE
P = LEAD-FREE
OR ASSEMBLY
IRFB3306
YWWP
DATE CODE
Y = LAST DIGIT OF YEAR
LOT CODE Y = LAST DIGIT OF YEAR LOT CODE WW = WORK WEEK
LC LC WW = WORK WEEK LC LC P = LEAD-FREE
? = ASSEMBLY SITE CODE
TO-220AB packages are not recommended for Surface Mount Application.
Note: For the most current drawing please refer to IR website at: http://www.irf.com/package/
D2Pak Package Outline (Dimensions are shown in millimeters (inches))
D2Pak Part Marking Information
INTERNATIONAL INTERNATIONAL
RECTIFIER LOGO PART NUMBER RECTIFIER LOGO PART NUMBER
ASSEMBLY
FS3306
PYWW?
OR ASSEMBLY
FS3306
YWWP
LOT CODE DATE CODE DATE CODE
LC LC LOT CODE LC LC
P = LEAD-FREE Y = LAST DIGIT OF YEAR
Y = LAST DIGIT OF YEAR WW = WORK WEEK
WW = WORK WEEK P = LEAD-FREE
TO-262 Package Outline (Dimensions are shown in millimeters (inches))
TO-262 Part Marking Information
INTERNATIONAL PART NUMBER INTERNATIONAL PART NUMBER

RECTIFIER LOGO FSL3306
OR RECTIFIER LOGO FSL3306
ASSEMBLY PYWW? ASSEMBLY YWWP DATE CODE
DATE CODE
LOT CODE LOT CODE Y = LAST DIGIT OF YEAR
P = LEAD-FREE
LC LC Y = LAST DIGIT OF YEAR LC LC WW = WORK WEEK
WW = WORK WEEK P = LEAD-FREE
D2Pak Tape & Reel Information
TRR
1.60 (.063)
1.50 (.059)
1.60 (.063)
4.10 (.161)
1.50 (.059) 0.368 (.0145)
3.90 (.153)
0.342 (.0135)
FEED DIRECTION 1.85 (.073) 11.60 (.457)

1.65 (.065) 11.40 (.449) 24.30 (.957)
15.42 (.609)
23.90 (.941)
15.22 (.601)
TRL
1.75 (.069)
10.90 (.429) 1.25 (.049)
10.70 (.421) 4.72 (.136)
16.10 (.634) 4.52 (.178)
15.90 (.626)
FEED DIRECTION
13.50 (.532) 27.40 (1.079)

12.80 (.504) 23.90 (.941)
330.00 60.00 (2.362)

(14.173) MIN.
MAX.
30.40 (1.197)
NOTES : MAX.
1. COMFORMS TO EIA-418. 26.40 (1.039) 4
2. CONTROLLING DIMENSION: MILLIMETER. 24.40 (.961)
3. DIMENSION MEASURED @ HUB.
3
4. INCLUDES FLANGE DISTORTION @ OUTER EDGE.
†
Qualification information
Industrial
Qualification level ††
(per JEDEC JESD47F guidelines)
TO-220 N/A
Moisture Sensitivity Level D2Pak
MS L1
TO-262
RoHS compliant Yes
Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

Applicable version of JEDEC standard at the time of product release.
Revision History
Date Comment
• Updated data sheet with new IR corporate template.
4/24/2014 • Updated package outline & part marking on page 8, 9 & 10.
• Added bullet point in the Benefits "RoHS Compliant, Halogen -Free" on page 1.
IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

To contact International Rectifier, please visit http://www.irf.com/whoto-call/

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IRFB3306PbF

Absolute Maximum Ratings

RθJA Junction-to-Ambient (PCB Mount) , D2Pak jk ––– 40

Static @ TJ = 25°C (unless otherwise specified)

(Body Diode) showing the

(Body Diode) d p-n junction diode.

ID, Drain-to-Source Current (A)

≤ 60μs PULSE WIDTH ≤ 60μs PULSE WIDTH

VDS , Drain-to-Source Voltage (V) VDS , Drain-to-Source Voltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

RDS(on) , Drain-to-Source On Resistance

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance vs. Temperature

ID, Drain-to-Source Current (A)

V(BR)DSS , Drain-to-Source Breakdown Voltage

T C , Case Temperature (°C) TJ , Junction Temperature (°C)

Ci= τi/Ri 0.400239 0.005548

t1 , Rectangular Pulse Duration (sec)

Fig 13. Maximum Effective Transient Thermal Impedance, Junction-to-Case

Allowed avalanche Current vs avalanche

Fig 14. Typical Avalanche Current vs.Pulsewidth

160 Purely a thermal phenomenon and failure occurs at a temperature far in

Fig 15. Maximum Avalanche Energy vs. Temperature

TJ , Temperature ( °C ) dif / dt - (A / μs)

IF = 45A 100 IF = 30A

dif / dt - (A / μs) dif / dt - (A / μs)

Fig. 20 - Typical Stored Charge vs. dif/dt

Driver Gate Drive

RG • dv/dt controlled by RG VDD Re-Applied

* VGS = 5V for Logic Level Devices

TO-220AB Package Outline

TO-220AB Part Marking Information

INTERNATIONAL PART NUMBER INTERNATIONAL PART NUMBER

TO-220AB packages are not recommended for Surface Mount Application.

D2Pak Package Outline (Dimensions are shown in millimeters (inches))

D2Pak Part Marking Information

TO-262 Package Outline (Dimensions are shown in millimeters (inches))

TO-262 Part Marking Information

INTERNATIONAL PART NUMBER INTERNATIONAL PART NUMBER

D2Pak Tape & Reel Information

FEED DIRECTION 1.85 (.073) 11.60 (.457)

13.50 (.532) 27.40 (1.079)

330.00 60.00 (2.362)

 Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/

IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA

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Qualification standards can be found at International Rectifiers web site: http://www.irf.com/product-info/reliability/