i) A transistor with IB = 100μA & IC = 2mA, Find 2 2 L2 6

Register Number:
a) β of the transistor
b) α of the transistor
12.(B) c) Emitter Current IE
d) If IB changes by 25μA and IC changes by
Year / Sem: I / II Date: 28.04.18
MODEL TEST 0.6mA. Find the new value of β
Duration: 3 hours Max. Marks: 100 ii) Justify transistor as an amplifier. 2 2 L3 7
Subject Code – EC8252 Subject Name – ELECTRONIC DEVICES What is known as metal oxide semiconductor
ANSWER ALL QUESTIONS 13.(A) field effect transistor? Explain its principle of 3 3 L2 13
PART - A (5 x 2= 10) operation in enhancement mode with diagram.
Q.No Question Unit Co# BT M (OR)
1. What is barrier potential? 1 1 L1 2 13.(B) Explain the construction and operation of N –
3 3 L2 13
Channel JFET with suitable diagram.
2. What is avalanche breakdown? 1 1 L1 2 Draw the V-I characteristics of Schottky diode
4 4 L2 13
14.(A) and Explain its operation.
3. Define early effect. 2 2 L1 2 (OR)
Draw the h parameter model of CE Write short notes on 4 4 L2 7
4. 2 2 L1 2
configuration? 14.(B) i) MESFET
Draw the symbol of FINFET and Dual Gate ii) Dual Gate MOSFET. 4 4 L2 6
5. 3 3 L1 2
MOSFTE. Sketch the basic construction and characteristics
5 5 L2 13
6. Compare FET and BJT. 3 3 L1 2 15.(A) for a UJT. Briefly explain the device operation.
(OR)
7. List out the applications of tunnel diode. 4 4 L1 2 i) Explain the construction and operation of 5 5 7
LCD.
8. What is the basic principle behind LDR? 4 4 L1 2 15.(B) L2
ii) Explain the working and characteristics of
5 5 6
DMOS.
9. Sketch the VI characteristics of UJT. 5 5 L1 2
PART - C (1 x15= 15)
10. Write down the significance of Optocoupler. 5 5 L1 2 Q.No Question Unit Co# BT M
Write short notes on 4 4 L2 8
PART - B (5x13= 65)
16.(A) i) Tunnel Diode
Q.No Question Unit Co# BT M
ii) Varacter Diode 4 4 L2 7
Derive the current equation of PN Junction
11.(A) 1 1 L2 13 (OR)
diode.
(OR) 16.(B) Explain the operation of SCR with structural
5 5 L2 15
Describe the construction and working of PN diagram and draw the characteristics of SCR.
junction diode. Explain the forward and reverse M – Marks CO# - Course Outcome BT - Blooms Taxonomy
11.(B) 1 1 L2 13 L1 – Remember L2– Understanding L3 - Apply
characteristics of PN junction diode and obtain
its VI characteristic curve. L4 – Analyze L5 – Evaluate L6 – Create
i) With relevant expressions and sketch, describe 2 2 L2 7
12.(A) the h parameter model.
ii) Describe the working of NPN transistor. 2 2 L2 6
Prepared by HOD
(OR)