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98(上) 1
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Y-Driver IC
TFT-LCD
TFT-LCD
Connector
1280*(3)*1024
Connector
LVDS LVDS Timing 1280*(3)*1024
LVDS Timing
Receiver
Receiver Controller
Controller Pixels
Pixels
+5V G1024
D1 D3840
4 CCFL
DC/DC
DC/DC Gamma
X-Driver IC
Converter
Converter Correction
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Driving Circuits of TFT- LCD Module Gate Driver IC
• Example • Also called scan driver or row driver
• Function
– Read in start signal
– Progressively turn on pixel TFTs on each gate line
– Turn off TFT during pixel holding period
• Design consideration
– RC delay of bus line (for large-size panel)
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G1
Out1 Out2 Out3 Outn
G2
To Display Area
S/R frequency : 10k~75kHz , Output voltage range : > 12V Gate driver 1 Gate driver 2
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Key Specifications Package of Driver IC
• Channel number
(240,256,264,270,300,308…)
• Max. operation frequency (200KHz, 500KHz)
• 2 level or 3 level driving
• Operation voltage
– digital : 5V, 3.3V
– analog : VGG>20V, VEE<-10V
• Package (TCP, COG, COF)
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Channel Number vs. Resolution Power On/Off Sequence
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φ φ
IN OUT
φ φ
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Shift Register Shift Register – Latch 1
/CLK CLK
• Latch W X
G1
CLK /CLK
– Basic memory
SP(L)
element N1 N2
logic inverter
– Bistable circuit G2
Y Z
S1 S2 US 6,157,361
SHARP
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Inverter Type
Vcc Vpp
Vdd
T1 P1 P2
T2 N1 N2
¾ With both transistors of the inverters turned on, a current path from the supply voltage
US 6,724,361 B1 to ground is present, resulting in undesirable power consumption.
Ref : Low Power Digital VLSI Design, A. Bellaouar, M. Elmasry
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Level Shifter – Example 2 Output Buffer
Vdd Vdd
Vdd Vdd
Latch Type
P3 P4
M3 M6
Vout
Vcc Vcc
IN OUT
M2 M5
P1 Vcc N3 P2 N4 Vcc
INPUT /INPUT
Vin OUTPUT
M1 M4
N1 N2
US 4,486,670
INTERSIL GND GND Area ratio = e (2.7) ~ 3
GND GND
¾ This circuit overcomes the problem of direct power consumption by using a latch.
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Vd 1 Vd 2 Vd 3
Vg, N-2
Vpixel
TFT
Cst
Vg, N-1 CLC
Vg, N
~10us ~10us
1 frame ~16ms
•First pulse is for precharge
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Three-level Capacitive Coupling Driving
(C. C. Driving) Three-level C. C. Driving
• Cst on gate
3-level ΔV 1 = Vghl ×
Cgd
Clc + Cst + Cgd + Cds Considerpreviouscase,
Scan line n
Vgc 0.05× 25
Cgd Vghl ΔV 2 = Vgc ×
Cst ΔVgd = = 1.47V
Clc + Cst + Cgd + Cds 0.4 + 0.4 + 0.05
Cgd 0.05
Vgc = ΔVghl × = 25 = 2.778
Clc Cst Cgd Cs + Cgd 0.4 + 0.05
Cds ΔV 3 = Vgc ×
Vcom Clc + Cst + Cgd + Cds
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Four-level C. C. Driving Four-level C. C. Driving
• Cs on Gate with 4-Level Driving Scheme
ΔV1 = (Vg + (Ve−))×
Cgd
ΔV 4 = (Vg − (Ve+))×
Cgd
Black(+)
(Cst + CLC + Cgd) (Cst + CLC + Cgd)
Cst Cst Black(+)
ΔV 2 = (Ve+) × ΔV 5 = (Ve−) ×
(Cst + CLC + Cgd) (Cst + CLC + Cgd)
Positive Driving
Positive Driving
Cgd Cgd
ΔV 3 = (Ve−) × ΔV 6 = (Ve+) ×
(Cst + CLC + Cgd) (Cst + CLC + Cgd) Data White(+) Data White(+)
Center White(-) Center White(-)
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3-level
driving
X/V X/V V V
4-level
driving
X/V X/V X X
Vcom AC/DC
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Gate-Driver In Panel Ch4. Driving Circuits Design of A-Si TFT
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Comparison of Analog Data Driver LAAT Driver Architecture
For a-Si TFT-LCDs
SISO SIPO CLK, DIO S/R S/R S/R S/R S/R S/R S/R S/R
1 phase 1 phase
Video in Sample Sample Sample Sample Sample Sample Sample Sample
Circuits complexity
lowest higher
Hold Hold Hold Hold Hold Hold Hold Hold
Pixel charging time TVL / Pix-H TVL Driver IC
Buffer Buffer Buffer Buffer Buffer Buffer Buffer Buffer
Sample time TVL / Pix-H TVL / Pix-H
Pixel Pixel Pixel Pixel Pixel Pixel Pixel Pixel
1 2 3 4 5 6 7 8
S/R frequency 1/(TVL / Pix-H ) 1/(TVL / Pix-H)
Array Pixel Pixel Pixel Pixel Pixel Pixel Pixel Pixel
Reformed video
needed
No No
All video signals stored in A latches are written to B latches simultaneously in each horizontal
scanning period. Features: (1) has sufficient charging capability; (2) very difficult to achieve good
TVL :vertical line time, Pix-H :horizontal pixel number uniformity of output voltages of the analog buffer.
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Max. Frequency of Shift Registers Digital Data Driver
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receiver
Sample Sample Sample Sample sample
circuits Data
Data
complex simple in
Reg. Reg. Reg. Reg. reg.
complexity
Hold Hold Hold Hold Hold
noise immunity high low Latch Signal
Reg. Reg. Reg. Reg. Reg. Digital Part
gamma Yes No Level Level Level Level Level Analog Part
correction Shifter Shifter Shifter Shifter Shifter Level Shifter
CLK
POL
DIO1
Positive
DIO2
Odd outputs
High-Z High-Z
Data latch P1 P2 P3 P4 P5 P127 P128 P129 P130 P131 P132 P133
Even outputs Negative
High-Z
Tst Tst
Invalid Driver 1 Driver 2
Output load condition : 1K 1K 1K 1K 1K
Output
1st 384 Outputs 2nd 384 Outputs
15P 15P 15P 15P 15P
for 1~128 Pixel for 129~256 Pixel
Vcom
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Resolution vs. Max. Frequency D/A Converter
Frame rate 60 Hz 60 Hz 75 Hz 75 Hz
• Fundamentals of Data Converter
Pixel Horizontal Pixel Horizontal
frequency period frequency period
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• Offset error Where bi is 1 or 0, i.e. binary, bn-1 is the MSB, and b0 is the LSB
• Gain error
• Accuracy
資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002. 資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫. 林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
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Idea D/A Converter (cont') Idea D/A Converter (cont')
• Analog output Vout is related to Bin through an • An ideal 2-bit DAC example:
analog reference, VRef Input-output transfer curve. In
1. Vout and VRef may be voltage, current, or charge. general, the maximum value of
2. We assume here that they are voltage (for simplicity) Vout is not VRef but rather
-n
VRef(1-2 ) or equivalently, VRef-
3. Definitions:
VLSB.
⎛b b b b ⎞
Vout = V ref ⎜ n −1 1 + n −2 2 + L + n1−1 + 0n ⎟ = V ref × Bin ,
⎝ 2 2 2 2 ⎠
• A multiplying DAC (MDAC) is realized by simply
V ref allowing the reference signal, VREF, to be a varying
V LSB = , where VLSB is defined as the voltage changes
2N when one LSB changes. input signal along with BIN. Such an arrangement results
in Vout being proportional to the multiplication of the input
• 1 LSB = 1/2N unitless definition.
資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
signals, BIN and VRef.
林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
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資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002. 資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫. 林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
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Offset Error Gain Error
• Offset error is in units of LSBs. • Gain error is the difference at the full-scale value between
the ideal and actual when the offset error has been
• Offset error is the output that occurs for the input reduced to zero.
code that should produce zero output.
• Gain error is in units of LSBs.
Vout
Eoff ( DAC ) = 0...0
• DACs︰
VLSB ⎛ Vout Vout ⎞
E gain ( DAC ) = ⎜ 1...1 − 0...0 ⎟ − (2 − 1)
N
資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002. 資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
98(上) NCHU / EE / 汪芳興 / fansen@dragon.nchu.edu.tw Page 61 / 195 98(上) NCHU / EE / 汪芳興 / fansen@dragon.nchu.edu.tw Page 62 / 195
林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫. 林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002. 資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫. 林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
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D/A Converter Digital-to-Analog Converters
資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
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資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002. 資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫. 林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
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Decoder-Based DAC Resistor-string DAC
VRef
Vout
–Resistor string switches. R
R
– Folded resistor-string ¾ Extra drain and source
R
capacitance (to GND) is offset
b2
by the reduced switch resistance. R
¾ Larger layout R
¾ Can operate closer to positive Bin = b22-1+b12-2+b02-3
資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
supply voltage. 2N resistors
林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
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林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
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資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
蘇育民, “數位類比轉換器設計與測試之研究,” 暨南國際大學電機工程學系碩士論文, 2004
資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
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蘇育民, “數位類比轉換器設計與測試之研究,” 暨南國際大學電機工程學系碩士論文, 2004
Binary-Weighted (or Binary-Scaled)
Digital-to-Analog Converters
Converter
• Nyquist-rate D/A converters • An appropriate set of signals that are all related in a
binary fashion
• Decoder-based DAC • The binary array of signals might be voltages,
charges, or currents.
• Binary-weighted converters
• Five main types:
• Glitches – Binary-weighted resistor DAC
– Reduced-resistor-ratio ladders
• Thermometer-code DACs – R-2R-based DAC
– Charge-redistribution switched-capacitor DAC
– Current-mode DAC
資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
蘇育民, “數位類比轉換器設計與測試之研究,” 暨南國際大學電機工程學系碩士論文, 2004
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資料來源: Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002, p.624 資料來源: Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002, p.624
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Reduced-resistor-ratio Ladders Reduced-resistor-ratio Ladders (cont’)
• Reduce the large resistor ratios in a binary- • An additional 4R was added such that
weighted array resistance seen to right of the 3R equals R.
• Introduce a series resistor to scale signals in • One-fourth the resistance ratio compared to
portions of the array the binary-weighted case.
– Ex : VA= -1/4VRef • Current ratio has remained unchanged
– Switches must be scaled in size.
• Repeating this procedure recursively, one can
obtain an R-2R ladder.
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• Current ration is
still large→ large
ratio of switch
sizes
資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002. 資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
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資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
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Glitches (cont’) Digital-to-Analog Converters
資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
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資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
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林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
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Examples of DAC 3 R-String DAC
5
• 12 Bit Linear DAC using capacitor coupled adder b1 b1 b2 b2 b3 b3
R/2
R out
R/2
-19
資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
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資料來源:Philip E. Allen, Douglas R. Holberg, ”CMOS analog circuit design”, Oxford, 2002.
林克旯, “ADC及DAC積體電路實作,” MSD聯盟-混合訊號式積體電路設計技術推廣教育計畫.
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Gamma Correction Gamma Correction
T-V curve is non-linear.
10 Gamma Voltage 18 Gamma Voltage
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Output Buffer OP-AMP – An Example
Even
Gamma
-
negative Output
z Wide Dynamic Range (Rail to Rail )
buffer
Voltage DAC N + z Low deviation
(-)
z High driving ability
Positive and negative signals are applied by DAC1 and DAC2 separately. Dynamic range of each DAC is z Low power consumption
reduced to ½ compared with conventional ones.
z Optimum OP AMP. area
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Bias Circuitry
Ref: P. E. Allen, D. R. Holberg, “CMOS Analog Circuit Design,” 2nd Ed., Oxford, 2002 Ref: P. E. Allen, D. R. Holberg, “CMOS Analog Circuit Design,” 2nd Ed., Oxford, 2002
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Model for a Nonideal Op-Amp Classification of Op-Amp
conversion Hierarchy
Analog CircuitNCHU
Ref: P. E. Allen, D. R. Holberg, “CMOS 98(上) / EE / 汪芳興 / fansen@dragon.nchu.edu.tw
Design,” 2nd Ed., Oxford, 2002 Page 109 / 195 98(上) NCHU / EE / 汪芳興 / fansen@dragon.nchu.edu.tw Page 110 / 195
Ref: P. E. Allen, D. R. Holberg, “CMOS Analog Circuit Design,” 2nd Ed., Oxford, 2002 Ref: P. E. Allen, D. R. Holberg, “CMOS Analog Circuit Design,” 2nd Ed., Oxford, 2002
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Model Parameters for a Typical CMOS
Design of Op Amp Bulk Process
– Performance requirement Example Parameter Process description Typical parameter value unit
• Gain ≧70 db symbol n-channel p-channel
• Gain bandwidth ≧5 MHz Threshold voltage V
VT0 0.7±0.15 -0.7±0.15
• Settling time ≦1 us (VBS=0)
• Slew rate ≧5 V/us Transconductance uA/V2
K’ 110.0±10% 50.0±10%
• Input common-mode range, ICMR ≧±1.5 V parameter (in sat.)
• Common-mode rejection ratio, CMRR ≧60 db γ Bulk threshold 0.4 0.57 V1/2
• Power-supply rejection ratio, PSRR ≧60 db parameter
• Output voltage swing ≧±1.5 V λ Channel length 0.04(L=1um) 0.05(L=1um) V-1
modulation parameter 0.01(L=2um) 0.01(L=2um)
• Output resistance N/A
• Offset ≦ ± 10 mV Surface potential at V
2|φF| strong inversion
0.7 0.8
• Noise ≦100 nV/√Hz@1 kHz
• Layout area ≦ 5000 x (min. L)2 Model parameters for a typical CMOS bulk process using the simple
model with values based on a 0.8um silicon-gate bulk CMOS n-well
Analog CircuitNCHU
Ref: P. E. Allen, D. R. Holberg, “CMOS 98(上) / EE / 汪芳興 / fansen@dragon.nchu.edu.tw
Design,” 2nd Ed., Oxford, 2002 Page 113 / 195 Analog CircuitNCHU
Ref: P. E. Allen, D. R. Holberg, “CMOS 98(上) / EE / 汪芳興 / fansen@dragon.nchu.edu.tw
Design,” 2nd Ed., Oxford, 2002 Page 114 / 195
Analog CircuitNCHU
Ref: P. E. Allen, D. R. Holberg, “CMOS 98(上) / EE / 汪芳興 / fansen@dragon.nchu.edu.tw
Design,” 2nd Ed., Oxford, 2002 Page 115 / 195 98(上) NCHU / EE / 汪芳興 / fansen@dragon.nchu.edu.tw Page 116 / 195
Frequency and Phase Response (2/3) Frequency and Phase Response (3/3)
• Bode Plots: • Time response of a second-order system
– |A(jω) F(jω)| & Arg[- A(jω) F(jω)] – Large P.M. results in less ‘ringing’ Æ good stability
– P.M. >45° (at least), > 60° (preferable)
Phase Margin
ΦM = Arg[L(jω0dB)]
Analog CircuitNCHU
Ref: P. E. Allen, D. R. Holberg, “CMOS 98(上) / EE / 汪芳興 / fansen@dragon.nchu.edu.tw
Design,” 2nd Ed., Oxford, 2002 Page 117 / 195 Analog CircuitNCHU
Ref: P. E. Allen, D. R. Holberg, “CMOS 98(上) / EE / 汪芳興 / fansen@dragon.nchu.edu.tw
Design,” 2nd Ed., Oxford, 2002 Page 118 / 195
P’1=-1/(RICI)
P’2=-1/(RIICII) CII >> CI, CC
P1= -1/(gmIIRIRIICC)
If F(s)=1 (worst case)
PM << 45°
P2= - gmIICC /(CICII+ CCCII+ CICC) ≒ - gmII/CII
Æneed compensation Z1 = gmII/CC
Ref: P. E. Allen, D. R. Holberg, “CMOS Analog Circuit Design,” 2nd Ed., Oxford, 2002
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Miller Compensation of Op Amp Two Stage Op Amp with Parasitic C
• Root locus plot of the • There are more than two pole due to C1, C2, C3,......
loop gain F(s)=1 • We will concentrate on two most dominant (small) pole
and the RHP zero. − GI GII − ( gds2 + g ds4 )(gds6 + gds7 )
p1 ≅ =
gmII CC gm6CC
• Bode plots − gmII − gm6
p2 ≅ =
– P2 does not affect the CII C2
magnitude until after
gmI gm2
|AF|<1 z1 ≅ =
– Z1 increases the phase CC CC
shift Unit gain bandwidth:
g mI g m 2
GB ≅ =
CC CC
Analog CircuitNCHU
Ref: P. E. Allen, D. R. Holberg, “CMOS 98(上) / EE / 汪芳興 / fansen@dragon.nchu.edu.tw
Design,” 2nd Ed., Oxford, 2002 Page 121 / 195 Analog CircuitNCHU
Ref: P. E. Allen, D. R. Holberg, “CMOS 98(上) / EE / 汪芳興 / fansen@dragon.nchu.edu.tw
Design,” 2nd Ed., Oxford, 2002 Page 122 / 195
Analog CircuitNCHU
Ref: P. E. Allen, D. R. Holberg, “CMOS 98(上) / EE / 汪芳興 / fansen@dragon.nchu.edu.tw
Design,” 2nd Ed., Oxford, 2002 Page 123 / 195 Analog CircuitNCHU
Ref: P. E. Allen, D. R. Holberg, “CMOS 98(上) / EE / 汪芳興 / fansen@dragon.nchu.edu.tw
Design,” 2nd Ed., Oxford, 2002 Page 124 / 195
Miller Compensation Technique Output Deviation of Buffer
• Z1 (the RHP zero) boosts the loop gain magnitude
while causing the loop phase shift to become VDD Vo,
absolute offset,
more negative. Æ undesirable between chip
• It worsens the stability of the op amp. RII idea voltage
CC
• It comes from the two feedback path. Vout
+
V’’ + M6 Vx,
- idea voltage Vdvo,Output deviation
V’ of gray m
-
• The signals through these two paths Voc,
Output offset
may be equal and opposite and cancel, between chip to V(m, ave),
creating the zero. chip Average output voltage
of gray m
⎛ − g m 6 RII (1 / sCC ) ⎞ ⎛ RII ⎞ − RII ( g m 6 / sCC − 1) IC1 IC2
Vout ( s ) = ⎜⎜ ⎟⎟V '+⎜⎜ ⎟⎟V ' ' = V
⎝ RII + 1 / sCC ⎠ ⎝ RII + 1 / sCC ⎠ RII + 1 / sCC
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Caz +
Channel 381
Channel 383
Channel 382
Channel 384
Height
Channel 1
Channel 3
Channel 2
Channel 4
- 384 channel Gamma
-+ Vo=Vin+Voffset
- Vin source driver resistor
Vin -+ + Voffset
Vo=Vin+Voffset Vcaz=(Vin+Voffset)-Vin
Voffset
Channel 418
Channel 420
Channel 417
Channel 419
420 channel
Channel 2
Channel 4
Channel 1
Channel 3
Phase 2 Gamma
source driver resistor
Caz
-+
Vin + - Vo=Vin+Voffset-Vcaz
Channel 478
Channel 480
Channel 477
Channel 479
Voffset 480 channel
Channel 1
Channel 3
Channel 2
Channel 4
Vo=Vin Gamma
source driver resistor
How Long the Ph1 is enough to sample the correct Voffset?
How Long the Ph2 is enough to charge the pixel voltage?
Layout length/channel < 2 cm / 480 = 41 um
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TSMC HV Process Power Saving mode (1)
Start pulse 1st IC 2nd IC 3rd IC 4th IC 5th IC 6th IC 7th IC 8th IC
LCD Panel
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Charge Sharing Charge Sharing
• Because only half of the charges with positive potential are
recycled, power saving efficiency of the previous charge
sharing is theoretically limited to 50%.
-
Vgmama+ O.P.
DAC P + Odd
Data Output
Charge Sharing
Control signal To data
line
Even
Output
Vgmama- -
O.P.
DAC N +
Data
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Power Consumption
/ IC
4~8mA
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Trend of LCD Source Driver Outline
z 6-bit / 8-bit to 10 bit resolution Ch4. Driving Circuits Design of A-Si TFT
z 384 / 480 to >500 output channels for SXGA+ / – Gate Driving Circuit
WSXGA+ / UXGA / WUXGA panel
– Source Driving Circuit
z TTL to RSDS/mini-LVDS data interface for low power
and EMI issue – LCD-TV Driving Technology
z 10V to 18V for wide-view-angle panel – Small-Size TFT-LCD Driver IC
z Reduced chip size for cost down
– Trends of Digital Interface
z Low power consumption
z TV application
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Composite Video
video Y/C
Decoder De-interlace cable
YCbCr
Display Area
YPbPr Sync TTL/
Sep. ADC LVDS/ HDTV : 1920x1080; 1280x720
Analog Scaler TMDS WXGA : 1366x768/1280x768
RGB
TMDS SDTV : 720x480
Digital Rx
DVI
DC/DC
MCU power
Inverter Back light unit
Antenna
Cable Set-Top Box
Scan driver
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Digital TV System LCD-TV Control IC
• Trumpion-Zipro Chip
Scaler IC
VSB/COFDM MPEG2
Digital Tuner POD/CI
Demodulator Decoder
32MB DDR
SDRAM
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γ−1.8
R1 string V0~V255
switch γ−2.2 DAC Vout
Vref [1:18]
R2 string
γ−2.6
R3 string
Use external Gamma control code to control final Gamma resistance rings
γ−1.8 γ−2.2 γ−2.6
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Over 8-bit Color Depth Overdrive for LCD TV
Conventional Overdrive
Over-8 bit data Gray Level Gray Level
Gn'
new DAC Gn Gn
Vref [1:18] with Vout (over-8 bit resolution)
γ-R string
Ideal Response / Voltage by Driver
Gn-1 Voltage by Driver Gn-1
Actual Response Overdrive Response
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Memory
Read/Write address
Ctrl
Control ckts
Tr+ Tf ≈ 25ms (ON/OFF)
Tr, Tf < 20ms (Gray Level)
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Dynamic Contrast Enhancement Other Technologies
¾ Over-8 bit color depth • 10 bit color depth (source driver IC)
¾ Dynamic gamma correction
– 1.07 billion colors
¾ Dynamic backlight control
• LED backlight
– R, G, B mixed LED BLU
• NTSC ratio > 100%
• R/G/B color sequential method (CF-free)
• Power consumption
• Thin module thickness
brightness
brightness
brightness
2002~2003 2004~2008
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Applications of Small Size Display Small-Size TFT-LCD Driver IC
Source
Controller Controller +
driver
0.25 μm Source driver
0.5 μm Hitachi
Single chip Samsung
奇景
DC/DC Gate DC/DC converter HV 聯詠
TFT
TFT converter driver + gate driver 智寶科技
0.6 μm HV 0.6 μm HV HV
小尺寸TFT-LCD驅動晶片解決方案演進圖
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G176
G175
G177
S395
S394
S396
G2
G1
G0
• Simple IC Sketch for TFT Mobile Phone
S3
S2
S1
:::
:
:
:
VGH
– 2.5V Block:OSC, SRAM, APR, Some Logic VGL (176+2)CH
Gate Driver
Gamma
adjusting
64 396 Channel
Source Driver
Vgoff
GVDD and
– 5V Block:I/O, Source, Regulator, Charge Pump (PWR) VGS
Gate
graylevel
generator
Latch circuit
AVDD
control
– 32/40V Block:Gate, Regulator, Charge Pump (PWR) Address
Built-in GRAM
Power counter 132x18x176 bit
Supply
Circuit
Read / Write
Gate Driver Source Driver Gate Driver Data latch
Timing 18
GAMA64
PWR SRAM SRAM PWR Generator
Index Control
APR register register 18
OSC
Vcom System Interface
VDD 18/16/9/8-bit parallel, 3-pin SPI
18
VDD3
Control
R/W
SPI
Data
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Voltage Setting Voltage Waveforms
VGH(+9 ~ +16.5V)
BT2-0
VGH(+9 ~ +16.5V)
AVDD(+3.5~ +5.5V)
VC2-0 BT2-0 VREG1OUT
VCI(2.5V ~ 3.3V) GVDD(+3.0~ +5.0V)
sn(source output) AVDD(+3.5~ +5.5V)
VCI1 VCOM4-0
VDD(2.0V ~ 3.3V) VRH3-0 VcomH(+3.0~ VREG1OUT) GVDD(+3.0~ +5.0V)
VDV4-0 VDD(2.0V ~ 3.3V)
VcomH(+3.0~ VREG1OUT)
VSS(0V) VCOM
-1 times -1 times VcomL(VCL+0.5 to 1.0V)
VcomL(VCL+0.5 to 1.0V)
VSS(0V)
VCL
VC3=0 VC3=1 VgoffH (~to -5.0V)
VRL3-0 VRL3-0
VgoffH (to -5.0V) Gn (Gate output)
VgoffL(VGL+0.5 to -5V)
VREG2OUT
VgoffL(VGL+0.5 to -5V)
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Standard level for grayscale voltage generator. VcomL O When the Vcom alternation is driven, this pin indicates a low level of Vcom. An internal register can be used to adjust the
GVDD I/O
Connect a capacitor for stabilization. voltage. Connect this pin to a capacitor for stabilization.
When the VCOMG bit is low, the VcomL output stops and a capacitor for stabilization is not needed.
An internal reference power supply for VREG1OUT/VREG2OUT.
VCI I/O Connect VDD when VDD = 2.5 to 3.3 V. VGH O A positive power output pin for gate driver, internal charge-pump circuits, bias circuits, and operational amplifiers. Connect a
Connect a 2.5 to 3.3 V external-voltage power supply when VDD = 2.0 to 2.5 V. capacitor for stabilization.
Connect this pin to VCI3 pin. When not using a charge-pump circuit 2, leave it open.
VSS - System ground (0V)
VGL O A Negative power output pin for gate driver, bias circuits, and operational amplifiers.
AVSS - System ground level for analog circuit block. Connect a capacitor for stabilization. When internal VGL generator is not used, connect an external-voltage power supply
higher than -15.0 V.
A power supply pin for generating VcomL. When VcomL is higher than VSS, outputs
VCL I/O
VSS level. Vgoff I Power supply pin for off level for gate of TFT.
Connect this pin to VgoffOUT. When VgoffOUT is not used, connect an external-voltage power supply higher than -TBD V.
REGP I/O Input pins for reference voltages of VREG1OUT when the internal reference-voltage generation circuit is not used. Leave
VgoffOUT O An power output pin for gate driver.
these pins open when the internal reference-voltage generation circuit is used.
This pin is a negative voltage for the gate off level. Alternation can be synchronized by M pin. Set the internal register
VREG1OUT O This pin outputs a reference voltage for VREG1 between AVDD and VSS. When the internal reference voltage is not used, according to the structure of the TFT-display retention volume.
the reference voltage can be generated from the voltage of REGP. Connect this pin to a capacitor for stabilization. For the amplitude at the alternation driving, this pin outputs a voltage between VcomH and VcomL with the VgoffL reference
When this pin is not used, leave it open. voltage..
VREG2OUT O This pin outputs a reference voltage for VREG2 between VSS and VGL When the internal reference voltage is not used, the VgoffH O When the Vgoff alternation is driven, this pin indicates a high level of Vgoff. Connect a capacitor for stabilization. When the
reference voltage can be generated from the voltage of REGN. Connect this pin to a capacitor for stabilization. When CAD bit is low, the VgoffH output stops and a capacitor for stabilization is not needed.
this pin is not used, leave it open.
VgoffL O When the Vgoff alternation is driven, this pin indicates a low level of Vgoff. Connect a capacitor for stabilization. An internal
VcomOUT O A power supply for the TFT-display counter electrode. register can be used to adjust the voltage.
The alternating cycle can be set by the M pin. Connect this pin to the TFT-display counter electrode.
This pin is also used as equalizing function: When EQ = “High” period, all source driver’s outputs (S1 to S396) are short to
Vcom level (Hi-z).98(上)
In case of VcomLNCHU
< 0V, equalizing function/ fansen@dragon.nchu.edu.tw
/ EE / 汪芳興 must not be used. (Set EQ bit (R07h) to bePage
“00” 163
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preventing the abnormal function.)
Power Definition (1/2) Power Definition(2/2)
(For the analog circuit) (For the regulator circuit)
Parameter Symbol Min. Typ. Max. Unit Conditions
Symbol Min. Typ. Max. Unit Conditions
AVDD 3.5 - 5.5 V Parameter
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Amplification Amplification C9
register and the micro-adjustment register that determines 8 grayscale levels.
Circuit2 Circuit 1 G VD D GVDD
(Vgoff (GVDD output
amplifier GVDD
adjustment) adjustment)
Vcom G R AM
REGN VcomH MS B L SB
adjustment Amplitude
REGP circuit adjustment
circuit
C1 5 R5 R4 R3 R2 R1 R0 G5 G4 G3 G2 G1 G0 B5 B4 B3 B2 B1 B0
VCI
VCI
Voltage VcomH
VCIOUT output VCOMH
Regulator adjustment P KP 02 PKP 01 PK P00
circuit amplifier
C12
P KP 12 PKP 11 PK P10
VCOMR VCOMOUT
A dj u s t V C O M H
v olt ag e ( w he n P KP 22 PKP 21 PK P20
using an extemal
var ia ble resistor) P o sitive P KP 32 PKP 31 PK P30
Vci1 VcomL p o larity
output
C14 C11- amplifier re g ister P KP 42 PKP 41 PK P40
VCOML
C17 C11+ C10
Charge- VgoffH P KP 52 PKP 51 PK P50
C12- pump amplitude
C18 C12+ circuit 1 adjustment P RP 02 PRP 01 PR P00
C16 AVDD circuit
P RP 12 PRP 11 PR P10
V0
VCI2 6 6 6
AVDD VgoffH VGOFFH
C21M output V RP0 3 V RP 02 VRP 01 VR P00
V1
C4 C21P
VgoffL amplifier
output C19 V RP1 4 V RP1 3 V RP 12 VRP 11 VR P10 64 g ra ysc ale 6 4 g ra ysca le 64 g rays cale
8 G raysc ale 64
C22M Charge- amplifier VGOFFOUT c o ntro l co ntro l co n tro l
C3 Am p lifie r
C22P pump <R> <G > <B >
C23M circuit 2
C2 C23P L CD d river LC D drive r LCD driver
V 63
VGH P KN02 PK N01 P KN0 0
C1 P KN12 PK N11 P KN1 0
VCI3
VGH VGOFFL
C31M P KN22 PK N21 P KN2 0
C6 C31P
Charge-
p ump C20
∫
VGL C7
Vci4
p o larity
re g ister P KN42 PK N41 P KN4 0
R G B
VC1 VDD
C41-
C5 Charge- VSS P KN52 PK N51 P KN5 0
C41+
VCL
pump VCI LC D
circuit 4 VSS
P RN02 PR N01 P RN0 0
C3 P RN12 PR N11 P RN1 0
A ODD EVEN
• Gate scan mode of NT3911 is set by SM and GS bit. GS • The structure of the grayscale amplifier is shown as below. Determine
TFT
Panel bit determines the scan direction whether the gate driver 8-level (VIN0-VIN7) by the gradient adjuster and the micro adjustment
G1
G175
G175
G176
G176 G2
scans forward or reverse direction. SM bit determines the register. Each level is split by the internal ladder resistance and level
NT3911 method of display division (Even/Odd or Upper/Lower between V0 to V63 is generated.
G1 G2 division drive). Using this function, various connections G r a d ie n t a d ju s t m e n t
r e g is te r
M ic r o a d ju s t m e n t r e g is t e r ( 6 X 3 b i t s )
O s c il la t i o n a d ju s t m e n t
r e g is t e r
B ODD
TFT EVEN
between NT3911 and the liquid crystal panels can be G VDD P R P /N 0
3
P R P /N 1
3
P K P /N 0
3
P K P /N 1
3
P K P /N 2
3
P K P /N 3
3
P K P /N 4
3
P K P /N 4
3
V R P /N 0
4
V R P /N 1
5
Panel
G175 G176
accomplished V IN P /N 0
V0
G1 G175 G176 G2
NT3911
SM GS Scan Mode
8 to 1 V IN P /N 1
V1
s e le c t o r
V2
V3
G1
C
TFT
Panel
0 0 A G1ÆG2ÆG3ÆG4Æ…ÆG173ÆG174ÆG175ÆG176
G175
8 to 1 V IN P /N 2
V8
s e le c t o r
G2 V9
G1ÆG3ÆG5Æ…ÆG173ÆG175
1 0
G1
D
TFT
Panel
C ÆG2ÆG4ÆG6Æ…ÆG174ÆG176
8 to 1
s e le c t o r
V IN P /N 5
V55
V56
G175 V57
G2
G176ÆG174ÆG172Æ…ÆG4ÆG2
8 to 1 V IN P /N 6
V62
G176
1 1 D s e le c to r
ÆG175ÆG173ÆG171Æ…ÆG3ÆG1
G1 G175 G176 G2
NT3911
V IN P /N 7
V63
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Grayscale Voltage
Grayscale Voltage
Grayscale Voltage
Pad size
Dummy Pad
80 80
1,195,239,742
Grayscale Number Grayscale Number Grayscale Number Grayscale Number
a) Gradient adjustment b) Amplitude adjustment c) Reference adjustment d) Micro-adjustment
• NOTES:
• Scribe line included in this chip size (Scribe line: 120um)
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Process Feature for One Chip Driver IC Product Applications
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Gate Driver IC
Gate Driver IC
Salicide Structure
Ò2.5 / 5V Devices Cross Section Sketch LTPS LTPS
A-Si TFT-LCD
TFT-LCD TFT-LCD
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Source : Novatek training material
Outline Interfaces in TFT-LCD Monitor
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TTL vs. LVDS Comparison of TTL,RSDS,and Mini-
LVDS
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– Voffset = 1.2 V R4 R5
R6 R7
– RGB data and clock only G0 G1
• Apply to bus between T-Con and Invalid data G2 G3
G4 G5
source drivers
G6 G7
– Reduce EMI B0 B1
– Reduce power consumption Invalid data B2 B3
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System Diagram :
RSDS Configuration RSDS Features and Benefits
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Mini-LVDS Mini-LVDS
6 bit data,
5 pairs
Data Bus Structure
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Mini-LVDS RSDS vs. Mini-LVDS
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PPDS Protocol Summaries
Technology Trends of Large-Size TFT-LCD Source Driver IC
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Memo