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Terminology:
Now for the ideal case, in the saturation region, IDS becomes independent of VDS i.e. in the saturation region channel is
pinched off at the drain end and a further increase in VDS has no effect on the channel’s shape.
But in practice increase in VDS does affect the channel. In the saturation region, when VDS increases, the channel pinch-off
point is moved slightly away from the drain, towards the source as the drain electron field “pushes” it back. The reverse bias
depletion region widens and the effective channel length decreases by an amount of ∆L for an increase in VDS.
Thus the channel no longer “touches” the drain and acquires an asymmetrical shape that is thinner at the drain end. This
phenomenon is known as channel length modulation.
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4/22/2018 Channel Length Modulation in MOSFET (VLSI Design) – Buzztech
Thus channel length modulation can be defined as the change or reduction in length of the channel (L) due to
increase in the drain to source voltage (VDS) in the saturation region.
In large devices, this effect is negligible but for shorter devices ∆L/L becomes important. Also in the saturation region due to
channel length modulation, IDS increases with increase in VDS and also increases with the decrease in channel length L.
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To account for the dependence of ID on VDS in the saturation region, replace L by L – ∆L. We know that in the saturation
region, drain to source current (IDS = ID) is given by:
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4/22/2018 Channel Length Modulation in MOSFET (VLSI Design) – Buzztech
Assuming
OR
therefore,
where,
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