ICs for TV

AN7522
Dual 3-W BTL audio power amplifier

■ Overview
AN7522 is an audio power amplifier IC for the stereo system. In the BTL (balanced transformerless) method, fewer
external parts and easier design for applications are required.

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■ Features
• 3-W output (8 Ω) with supply voltage of 8 V
• On-chip standby function

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• On-chip volume function

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■ Applications
• Televisions, audio equipment, personal computers, and active speakers

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■ Package
• HSIP012-P-0000E

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■ Block Diagram

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10 a
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GND 11

12
VCC 1

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Volumeic
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Ch.2 output

(Ch.2 output)

Ch.2 output
GND
(Ch.1 output)
MaCh.1 output

Ch.1 output

Standby
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Publication date: June 2006 SDB00117AEB 1

 AN7522

■ Pin Descriptions
Pin No. Descriptions Pin No. Descriptions
1 Supply voltage 7 Ground (input)
2 Ch.1 + output 8 Ch.2 input
3 Ground (output ch.1) 9 Volume (max. volume if this pin is open.)
4 Ch.1 − output 10 Ch.2 − output
5 Standby (standby state if this pin is open.) 11 Ground (output ch.2)

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6 Ch.1 input 12 Ch.2 + output

■ Absolute Maximum Ratings

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Parameter Symbol Rating Unit

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Supply voltage VCC 14 V

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Supply current ICC 2.0 A
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Power dissipation *3 PD 1.92 W

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Operating ambient temperature *1 Topr −25 to +70 °C

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−55 to +150 °C

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Storage temperature *1 Tstg

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Note) *1: Except for the operating ambient temperature and storage temperature, all ratings are for Ta = 25°C.
*2: At no signal.
.se ng ntin tin ty e ty ur
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*3: The power dissipation shown is the value for Ta = 70°C.

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■ Recommended Operating Range

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Parameter Symbol Range Unit

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Supply voltage VCC 3.5 to 13.5
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■ Electrical Characteristics at VCC = 8.0 V, RL = 8 Ω, f = 1 kHz, Ta = 25°C ± 2°C

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Parameter Symbol Conditions Min Typ Max Unit

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VIN = 0 mV, Vol. = 0 V 

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Quiescent circuit current ICQ 45 100 mA

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VIN = 0 mV, Vol. = 0 V  µA

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Standby current ISTB 1 10

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Output noise voltage * VNO Rg = 10 kΩ, Vol. = 0 V  0.10 0.4 mV[rms]

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Voltage gain GV PO = 0.5 W, Vol. = 1.25 V 31 33 35 dB

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Total harmonic distortion THD PO = 0.5 W, Vol. = 1.25 V  0.10 0.5 %

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Maximum output power PO1 THD = 10%, Vol. = 1.25 V 2.4 3.0  W
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Ripple rejection ratio * RR Rg = 10 kΩ, Vol. = 0 V, 30 50  dB

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VR = 1 V[rms], fR = 120 Hz
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Output offset voltage VOFF Rg = 10 kΩ, Vol. = 0 V −250 0 250 mV

Volume attenuation rate * Att PO = 0.5 W, Vol. = 0 V 70 85  dB
Channel balance 1 CB1 PO = 0.5 W, Vol. = 1.25 V −1 0 1 dB
Channel balance 2 CB2 PO = 0.5 W, Vol. = 0.6 V −3 0 3 dB
Intermediate voltage gain GVM PO = 0.5 W, Vol. = 0.6 V 20.5 23.5 26.5 dB
Channel crosstalk CT PO = 0.5 W, Vol. = 1.25 V 40 55  dB
Note) *: In measuring, the filter for the range of 15 Hz to 30 kHz (12 dB/OCT) is used.

2 SDB00117AEB
 AN7522

■ Terminal Equivalent Circuits at VCC = 8 V

Pin No. Pin name Equivalent circuit Voltage
1 VCC  8V
2 Ch.1 + output pin VCC 3.6 V
(at no signal)

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200 Ω
50 Ω 2

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800 Ω 20 kΩ

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3 GND 0V

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Ch.1 − output pin

4
.se ng ntin tin ty e ty ur VCC 3.6 V
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(at no signal)

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200 Ω
50 Ω 4
on es
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1/2 VCC
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800 Ω 20 kΩ
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5 Standby pin 0 V or 5 V
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VCC
(Standby off at
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30 kΩ To the
supply 5 V.
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shock sound
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Standby at 0.4 V
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VRF less or open.)

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(≈ VCC)
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5 10 kΩ
200 Ω
2 kΩ 50 kΩ
12 kΩ 1/2 VCC
33 kΩ 10 kΩ
To the constant
5 kΩ current circuit

SDB00117AEB 3
 AN7522

■ Terminal Equivalent Circuits at VCC = 8 V (continued)

Pin No. Pin name Equivalent circuit Voltage
6 Ch.1 input pin VREF1 (1.4 V) 1.4 V
VCC (Input circuit
50 µA 50 µA 100 µA bias voltage is
30 kΩ output.)

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1 kΩ
6

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1 kΩ 1 kΩ 500 Ω

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7 GND 0V

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8 Ch.2 input pin 1.4 V
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VREF1 (1.4 V)
VCC .se ng ntin tin ty e ty ur (Input circuit
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bias voltage is
50 µA 50 µA 100 µA

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30 kΩ output.)
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1 kΩ

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8 on es
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1 kΩ 1 kΩ 500 Ω
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9 Volume pin VCC Supply to

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0 V to 1.25 V
50 µA
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1 kΩ
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9 12 kΩ
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4 SDB00117AEB
 AN7522

■ Terminal Equivalent Circuits at VCC = 8 V (continued)

Pin No. Pin name Equivalent circuit Voltage
10 Ch.2 − output pin 3.6 V
VCC
(at no signal)

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200 Ω
50 Ω 10

1/2 VCC

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800 Ω 20 kΩ

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11 GND 0V

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11

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12 Ch.2 + output pin 3.6 V
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VCC
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200 Ω
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on es 50 Ω 12
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1/2 VCC
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800 Ω 20 kΩ
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■ Usage Notes
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• Please avoid the short-circuits to VCC , ground, or load short-circuit.

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• Please connect the cooling fin with the GND potential.

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• The thermal shutdown circuit operates at about Tj = 150°C. However, the thermal shutdown circuit is reset
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automatically if the temperature drops.

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• Please carefully design the heat radiation especially when you take out high power at high VCC .
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• Please connect only the ground of signal with the signal GND of the amplifier in the previous stage.

SDB00117AEB 5
 AN7522

■ Technical Data
• PD  Ta curves of HSIP012-P-0000A
PD  Ta
13
Independent IC
12 without a heat sink
5°C/W heat sink Rthj-a = 41.7°C/W
11

10

Power dissipation PD (mW)

9

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8

7 10°C/W heat sink

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5

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4 20°C/W heat sink

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3

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1

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0
0 25 50 70 75 100 125 150

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Ambient temperature Ta (°C)
• Main characteristics

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PO  VCC .se ng ntin tin ty e ty ur ICQ , ISTB  VCC

8 70 10.0
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f = 1 kHz
THD = 10% 9.0

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7 60
RL = 8 Ω, 16 Ω
Di ain

Quiescent circuit current ICQ (mA)

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400 Hz HPF 8.0

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Standby current ISTB (µA)
6 30 kHz LPF
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Output power PO (W)

Both ch. input 7.0

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Rg = 10 kΩ ICQ

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5
VSTB = 5 V

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6.0
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40

ic. t in
Vol. = 1.25 V
4 5.0
on es
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30
4.0
M

RL = 8 Ω
as lat
3
Both ch. input
di

Ch.2 (8 Ω) Rg = 10 kΩ 3.0
e

20
ue

2 VSTB = 0 V/5 V
Vol. = 0 V 2.0
Ch.1, Ch.2 (16 Ω)
tin

Ch.1 (8 Ω)
p

1 10 ISTB
on

1.0
isc

0 0 0.0
0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14
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Supply voltage VCC (V) Supply voltage VCC (V)

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PO , THD  VIN PC , ICC  PO

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10 100 3.5 1.8

VCC = 8 V
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Both ch. input

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f = 1 kHz Rg = 10 kΩ
RL = 8 Ω VSTB = 5 V
Ma

1.6
Vol. = 1.25 V 3.0 PC (8 Ω)
Total harmonic distortion THD (%)

400 Hz HPF
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30 kHz LPF 1.4

Power consumption PC (W)
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1 10
Supply current ICC (A)

2.5
Output power PO (W)

Pl

ICC (8 Ω) 1.2
THD
(ch.1, 100 kHz) THD 2.0
(ch.2, 100 kHz) PC (16 Ω) 1.0
0.1 1
1.5 0.8
THD (ch.2, 10 kHz) VCC = 8 V Both ch. input
f = 1 kHz Rg = 10 kΩ 0.6
THD (ch.1, 10 kHz)
1.0 RL = 8 Ω, 16 Ω VSTB = 5 V
0.01 0.1
PO (ch.1) ICC (16 Ω) 400 Hz HPF Vol. = 1.25 V 0.4
THD THD (ch.2, 1 kHz) 30 kHz LPF
(ch.1, 1 kHz) 0.5
0.2
PO (ch.2)
0.001 0.01 0.0 0.0
1 10 100 1 000 0.0 1.0 2.0 3.0 4.0 5.0

Input voltage VIN (mV[rms]) Output power (1-ch) PO (W)

6 SDB00117AEB
 AN7522

■ Technical Data (continued)

• Main characteristics (continued)
GV , PO  f THD  f
35 2.0 10
VCC = 8 V Both ch. input
34 GV (ch.1) 1.8 PO = 0.5 W Rg = 10 kΩ

Total harmonic distortion THD (%)

RL = 8 Ω VSTB = 5 V
33 1.6 400 Hz HPF Vol. = 1.25 V
GV (ch.2) 30 kHz LPF
Voltage gain GV (dB)

Output power PO (W)

32 1.4
1
GV(ch.1)
31 1.2

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30 1.0
GV(ch.2)
29 0.8 Ch.2
VCC = 8 V Both ch. input 0.1

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28 f = 1 kHz Rg = 10 kΩ 0.6
RL = 8 Ω VSTB = 5 V

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Ch.1

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400 Hz HPF Vol. = 1.25 V 0.4

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27
30 kHz LPF

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26 0.2

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25 0.0 0.01
10 100 1 000 10 000 100 000 10 100 1 000 10 000 100 000
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Frequency f (Hz) Frequency f (Hz)

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GV , THD  VCC RR  VCC

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35 1.0 80

34 0.9
.se ng ntin tin ty e ty ur Ch.1, Ch.2
GV (ch.1)
70
Total harmonic distortion THD (%)

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33 0.8
Ripple rejection ratio RR (dB)

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GV (ch.2) 60
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Voltage gain GV (dB)

RL = 8 Ω Vol. = 0 V/1.25 V

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32 0.7
PO = 0.5 W 30 kHz LPF VRIPPLE = 0.5 V[rms]

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f = 1 kHz 50 Rg = 10kΩ fRIPPLE = 120 Hz
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31 0.6
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RL = 8 Ω
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VSTB = 5 V
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400 Hz HPF

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30 0.5 40

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30 kHz LPF

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Ch.2 (vol.-max.)
29 Both ch. input 0.4
30
Rg = 10 kΩ
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28 VSTB = 5 V 0.3
M

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Vol. = 1.25 V 20
di

27 THD (ch.1) 0.2

e

Ch.1 (vol.-max.)
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26 0.1 10
THD (ch.2)
tin
p

25 0.0 0
on

0 2 4 6 8 10 12 14 0 2 4 6 8 10 12 14
isc

Supply voltage VCC (V) Spply voltage VCC (V)

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RR  VRIPPLE RR  fRIPPLE
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Ch.1, Ch.2 Ch.1

70
Ma

70
se
Ripple rejection ratio RR (dB)
Ripple rejection ratio RR (dB)

Ch.2
60 60
ea

VCC = 8 V VSTB = 5 V
RL = 8 Ω Vol. = 0 V/1.25 V
Pl

50 30 kHz LPF VRIPPLE = 0.5 V[rms] 50

Rg = 10 kΩ fRIPPLE = 120 Hz
40 40
Ch.2 (vol.-max.) Ch.2 (vol.-max.)
30 30
Ch.1 (vol.-max.)
Ch.1 (vol.-max.)
20 20
VCC = 8 V VSTB = 5 V
RL = 8 Ω Vol. = 0 V/1.25 V
10 10
Rg = 10 kΩ VRIPPLE = 0.5 V[rms]

0 0
10 100 1 000 10 000 10 100 1 000 10 000

Power supply ripple voltage VRIPPLE (mV[rms]) Power supply ripple frequency fRIPPLE (Hz)

SDB00117AEB 7
 AN7522

■ Technical Data (continued)

• Main characteristics (continued)
RR  Vol. CT  VCC
80 90
VCC = 8 V VSTB = 5 V
RL = 8 Ω VRIPPLE = 0.5 V[rms]
70 80
30 kHz LPF fRIPPLE = 120 Hz
Rg = 10 kΩ Ch.1
Ripple rejection ratio RR (dB)

60 70

Ch.2

Crosstalk CT (dB)
60
50

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Ch.2 50
40
Ch.1 40
PO = 0.5 W
30
f = 1 kHz
30
RL = 8 Ω

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20 400 Hz HPF

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20

.
30 kHz LPF

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Rg = 10 kΩ
10

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10 VSTB = 5 V
Vol. = 1.25 V

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0 0
0.0 0.5 1.0 1.5 0 2 4 6 8 10 12 14
on na

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Volume voltage Vol. (V) Supply voltage VCC (V)

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ct
CT  VIN CT  f

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90 90

80 Ch.1
.se ng ntin tin ty e ty ur 80
Ch.1
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70 70

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Ch.2

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Crosstalk CT (dB)

Crosstalk CT (dB)

60 60

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50 50
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40 40 Ch.2

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VCC = 8 V VCC = 8 V
f = 1 kHz PO = 0.5 W
on es
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30 30
RL = 8 Ω RL = 8 Ω
M

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400 Hz HPF Rg = 10 kΩ
20 20
30 kHz LPF VSTB = 5 V
di

Rg = 10 kΩ Vol. = 1.25 V
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10 VSTB = 5 V 10
Vol. = 1.25 V
tin
p

0 0
on

10 100 1 000 10 100 1 000 10 000 100 000

isc

Input voltage VIN (mV[rms]) Frequency f (Hz)

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VNO  VCC VNO  Rg

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800 RL = 8 Ω 800
VCC = 8 V
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Rg = 10 kΩ RL = 8 Ω
Din audio filter Din audio filter
Ma

700 700
Output noise voltage VNO (µV[rms])

Output noise voltage VNO (µV[rms])

VSTB = 5 V VSTB = 5 V
se

Vol. = 0 V/1.25 V Vol. = 0 V/1.25 V

600 600
ea
Pl

500 500

400 400 Ch.1 (vol.-max.)

Ch.2 (vol.-max.)
300 300
Ch.2 (vol.-max.)
Ch.1 (vol.-max.)
200 Ch.1 (FLAT) 200 Ch.1 (FLAT), Ch.2 (FLAT)
Ch.1, Ch.2 Ch.2 (FLAT) Ch.1, Ch.2
100 100

0 0
0 2 4 6 8 10 12 14 10 100 1 000 10 000 100 000

Supply voltage VCC (V) Input impedance Rg (Ω)

8 SDB00117AEB
 AN7522

■ Technical Data (continued)

• Main characteristics (continued)
VNO  Vol. ICQ  VSTB
1 200 0.10
VCC = 8 V
RL = 8 Ω
0.09
Rg = 10 kΩ
Output noise voltage VNO (µV[rms])

1 000 Vol. = 0 V

Quiescent circuit current ICQ (A)

Ch.2 (FLAT) 0.08
Ch.1 (FLAT)
0.07
800
VCC = 8 V 0.06

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RL = 8 Ω ICQ
600 Rg = 10 kΩ 0.05
Din audio filter
VSTB = 5 V 0.04
400

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0.03

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200 Ch.1, Ch.2 0.02

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0.01

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0.00
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 0 1 2 3 4 5
on na

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Volume voltage Vol. (V) Standby voltage VSTB (V)

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Att  VCC Att  VIN

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100 100
.se ng ntin tin ty e ty ur
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90 90
Volume attenuation Att (dB)

Volume attenuation Att (dB)

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Ch.1
Di ain

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80 80

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Ch.1, Ch.2

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Ch.2
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70 70

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co L a d t ty
pla m d m des

PO = 0.5 W VCC = 8 V
f = 1 kHz
ic. t in f = 1 kHz
on es
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RL = 8 Ω
lan nclu

60 RL = 8 Ω 60
400 Hz HPF 400 Hz HPF
M

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30 kHz LPF 30 kHz LPF

di

50 Rg = 10 kΩ 50 Rg = 10 kΩ
e
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VSTB = 5 V VSTB = 5 V
Vol. = 0 V Vol. = 0 V
tin
p

40 40
on

0 2 4 6 8 10 12 14 1 10 100 1 000
isc

Supply voltage VCC (V) Input voltage VIN (mV[rms])

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Att  f Att  Vol.

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100 0
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95 10
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90
Volume attenuation Att (dB)
Volume attenuation Att (dB)

20
ea

85 Ch.1, Ch.2
30
Pl

Ch.1, Ch.2
80
40
75
50
70 VCC = 8 V
VCC = 8 V
PO = 0.5 W
PO = 0.5 W 60
65 f = 1 kHz
RL = 8 Ω
RL = 8 Ω
Rg = 10 kΩ 70
60 400 Hz HPF
VSTB = 5 V
30 kHz LPF
Vol. = 0 V
55 80 Rg = 10 kΩ
VSTB = 5 V
50 90
10 100 1 000 10 000 100 000 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4

Frequency f (Hz) Volume voltage Vol. (V)

SDB00117AEB 9
 AN7522

■ Technical Data (continued)

• Main characteristics (continued)
THD  Vol. GV  VIN
10 100
VCC = 8 V 400 Hz HPF
PO = 0.5 W 30 kHz LPF
Total harmonic distortion THD (%)

f = 1 kHz Rg = 10 kΩ
RL = 8 Ω VSTB = 5 V

Voltage gain GV (dB)

Ch.1, Ch.2
1

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Ch.1, Ch.2 10
VCC = 8 V Both ch. input
f = 1 kHz Rg = 10 kΩ
RL = 8 Ω VSTB = 5 V
0.1
Vol. = 1.25 V

tin nc
400 Hz HPF
30 kHz LPF

d
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sta
cle
0.01 1
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1 10 100 1 000 10 000
on na

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Volume voltage Vol. (V) Input voltage VIN (mV[rms])

life
• Example of PCB pattern

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GND

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Di ain

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VCC 1 2 3 4 5 6 7 8 9 10 11 12

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Ch.1 out+

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Ch.1 out− ic. t in

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lan nclu

GND (input)
M

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Ch.2 out+ VIN (ch.2)

di

Mute/Volume
e
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Ch.2 out− VIN (ch.1)

tin

Standby
p
on
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■ Application Circuit Example

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10

11

12
1

1.0 µF 1.0 µF

8Ω 8Ω
270 kΩ
68 kΩ

10 kΩ

10 kΩ

470 µF Out 1 10 µF Out 2

VCC Standby VIN1 VIN2 Volume

10 SDB00117AEB
 Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-

ue e/
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.

(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-

tin nc
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product

d
.
Standards in advance to make sure that the latest specifications satisfy your requirements.

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(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute

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maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any

cy
defect which may arise later in your equipment.

life
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

ct
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire

du
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

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(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,
.se ng ntin tin ty e ty ur
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which
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damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.

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(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita

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Electric Industrial Co., Ltd.

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