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Microelectronic Circuits, Seventh Edition Sedra/Smith Copyright © 2015 by Oxford University Press
Basic MOSFET current source (current mirror)
𝐼𝐼𝑂𝑂 𝑊𝑊⁄𝐿𝐿 2
=
𝐼𝐼𝑅𝑅𝑅𝑅𝑅𝑅 𝑊𝑊⁄𝐿𝐿 1
𝑉𝑉𝐴𝐴𝐴 1
𝑟𝑟𝑜𝑜𝑜 = =
Figure 8.2 Basic MOSFET current mirror.
𝐼𝐼𝑂𝑂 𝜆𝜆2 𝐼𝐼𝑂𝑂
2) (in other words) 𝐼𝐼𝑂𝑂 slightly depends on 𝑉𝑉𝑂𝑂
Microelectronic Circuits, Seventh Edition Sedra/Smith Copyright © 2015 by Oxford University Press
BJT current mirror
Figure 8.7 The basic BJT current mirror. Figure 8.9 A simple BJT current source.
Microelectronic Circuits, Seventh Edition Sedra/Smith Copyright © 2015 by Oxford University Press
BJT current mirror
𝐼𝐼𝐶𝐶 2
𝐼𝐼𝑅𝑅𝑅𝑅𝑅𝑅 = 𝐼𝐼𝐶𝐶 + 2 = 𝐼𝐼𝐶𝐶 1 +
𝛽𝛽 𝛽𝛽
𝐼𝐼𝑂𝑂 1 2
= ≈1−
𝐼𝐼𝑅𝑅𝑅𝑅𝑅𝑅 ⁄
1 + 2 𝛽𝛽 𝛽𝛽
2
𝐼𝐼𝑅𝑅𝑅𝑅𝑅𝑅 = 𝐼𝐼𝑂𝑂 1+
𝛽𝛽 𝛽𝛽 + 1
2
𝐼𝐼𝑂𝑂 ≈ 1 − 2 𝐼𝐼𝑅𝑅𝑅𝑅𝑅𝑅
𝛽𝛽
Microelectronic Circuits, Seventh Edition Sedra/Smith Copyright © 2015 by Oxford University Press
BJT Wilson mirror
2
𝐼𝐼𝑂𝑂 ≈ 1 − 2 𝐼𝐼𝑅𝑅𝑅𝑅𝑅𝑅
𝛽𝛽
output resistance
𝑟𝑟02
Figure 8.13
Figure 8.15 (a) The CS amplifier with the current-source load implemented with a p-channel MOSFET Q2;
(b) the circuit with Q2 replaced with its large-signal model; and (c) small-signal equivalent circuit of the amplifier.
CS amplifier with current mirror as active load
𝑅𝑅𝑖𝑖 = ∞
1
𝐴𝐴𝑣𝑣 = 𝑔𝑔𝑚𝑚𝑚 + 𝑟𝑟𝑜𝑜𝑜 ∥ 𝑟𝑟𝑜𝑜𝑜
𝑟𝑟𝑜𝑜𝑜
≈ 𝑔𝑔𝑚𝑚𝑚 𝑟𝑟𝑜𝑜𝑜 ∥ 𝑟𝑟𝑜𝑜𝑜
1 𝑟𝑟𝑜𝑜𝑜
𝑅𝑅𝑖𝑖 ≈ 1+
𝑔𝑔𝑚𝑚𝑚 𝑟𝑟𝑜𝑜𝑜
Figure P8.55
Source follower with active load
𝑅𝑅𝑖𝑖 ≈ ∞
𝑔𝑔𝑚𝑚𝑚
𝐴𝐴𝑣𝑣 = ≈1
𝑔𝑔𝑚𝑚𝑚 + 1⁄𝑟𝑟𝑜𝑜𝑜 + 1⁄𝑟𝑟𝑜𝑜𝑜
1 1
𝑅𝑅𝑜𝑜 = ∥ 𝑟𝑟𝑜𝑜𝑜 ∥ 𝑟𝑟𝑜𝑜𝑜 ≈
Figure 8.45 (a) A source follower biased with a
𝑔𝑔𝑚𝑚𝑚 𝑔𝑔𝑚𝑚𝑚
current mirror Q2−Q3 and with the body terminal
indicated. Note that the source cannot be connected
to the body and thus the body effect should be Actually, the body effect is important, then
1 1
taken into account. (b) Equivalent circuit.
𝐴𝐴𝑣𝑣 ≈ =
1 + 𝜒𝜒 1 + 𝑔𝑔𝑚𝑚𝑚𝑚𝑚 ⁄𝑔𝑔𝑚𝑚𝑚
Next subject: MOS cascode
More accurately,
𝑔𝑔𝑚𝑚𝑚 + 1/𝑟𝑟𝑜𝑜𝑜
Figure 8.30 (a) A MOS cascode amplifier 𝐺𝐺𝑚𝑚 = 𝑔𝑔
with an ideal current-source load
𝑔𝑔𝑚𝑚𝑚 + 1⁄𝑟𝑟01 + 1⁄𝑟𝑟𝑜𝑜𝑜 𝑚𝑚𝑚
𝑅𝑅𝑜𝑜 = 𝑟𝑟𝑜𝑜𝑜 + 𝑟𝑟𝑜𝑜𝑜 + 𝑔𝑔𝑚𝑚𝑚 𝑟𝑟𝑜𝑜𝑜 𝑟𝑟02
Derivation of output resistance 𝑅𝑅𝑜𝑜 for cascode
Microelectronic Circuits, Seventh Edition Sedra/Smith Copyright © 2015 by Oxford University Press
MOS cascode with cascode current source
Impossible to double-cascode
because 𝑅𝑅𝑜𝑜 would still be the same
(though can double-cascode with
MOSFET in BiCMOS technology)
Figure 8.37 (a) A BJT cascode amplifier Needs “good” current source
with an ideal current-source load; (otherwise significantly less 𝐴𝐴𝑣𝑣 )
BJT cascode with cascode current source
Figure P8.81
Microelectronic Circuits, Seventh Edition Sedra/Smith Copyright © 2015 by Oxford University Press
Next subject: improved current mirrors
𝐼𝐼𝑅𝑅𝑅𝑅𝑅𝑅
𝑉𝑉𝐵𝐵𝐵𝐵𝐵 − 𝑉𝑉𝐵𝐵𝐵𝐵𝐵 = 𝑉𝑉𝑇𝑇 ln
𝐼𝐼𝑂𝑂
𝐼𝐼𝑅𝑅𝑅𝑅𝑅𝑅
𝐼𝐼𝑂𝑂 𝑅𝑅𝐸𝐸 = 𝑉𝑉𝑇𝑇 ln
𝐼𝐼𝑂𝑂
𝑅𝑅𝑜𝑜 = 𝑟𝑟0 [1 + 𝑔𝑔𝑚𝑚 (𝑅𝑅𝐸𝐸 ∥ 𝑟𝑟𝜋𝜋 )]
Figure 8.44 (a) CC–CE amplifier; (b) CD–CS amplifier; (c) CD–CE amplifier.
(a) CC-CE: increases 𝑅𝑅𝑖𝑖 (due to emitter follower), makes faster (not obvious)
(b) The same with MOS. Faster (no improvement of 𝑅𝑅𝑖𝑖 )
(c) The same in BiCMOS: better 𝑅𝑅𝑖𝑖 than in (a), better 𝑔𝑔𝑚𝑚 than in (b)
Darlington configuration Sziklai pair (compound,
complementary Darlington)
npn
npn pnp
𝛽𝛽 = 𝛽𝛽1 𝛽𝛽2
𝛽𝛽 = 𝛽𝛽1 𝛽𝛽2
Figure 8.48 (a) A CC–CB amplifier. (b) Another version of the CC–CB circuit with Q2
implemented using a pnp transistor. (c) The MOSFET version of the circuit in (a).
(a) CC-CB: fast because of CB, while large 𝑅𝑅𝑖𝑖 because of the follower
(b) The same with pnp BJT for CB
(c) MOSFET version of (a)