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Definition:
The Schottky Diode is an solid state diode having a metal semiconductor juncyion,used in fast
switching applications.
The operation relies on the principal that the electrons in the different material have different
potential energy.
N-type semiconductors have higher potential energy than electrons of metals
These diodes are used as rectifier at a single frequency exceeding 300MHz to 20 GHz
The rectifying action is depends on majority carrier only
The potential barrier is set with a constant between a metal and semiconductor
The charge storage problem of PN junction can be minimize or limited in schottky diodes.
RF mixer and detector diode:
The Schottky diode consists of its radio frequency functions owing to its switching speed at the
highest level and top frequency capability. The Schottky barrier diodes come handy for diode
ring mixers with high performance.
The energy band diagram of the N-type semiconductor and metal is show
in the figure
The vacuum level is defined as the energy level of electrons that are
outside the material. The work function is defined as the energy required to
move an electron from Fermi level (EF) to vacuum level (E0).
The work function is different for metal and semiconductor. The work
function of a metal is greater than the work function of a semiconductor.
Therefore, the electrons in the n-type semiconductor have high potential
energy than the electrons in the metal.
The energy levels of the metal and semiconductor are different. The Fermi
level at N-type semiconductor side lies above the metal side.
We know that electrons in the higher energy level have more potential
energy than the electrons in the lower energy level. So the electrons in the
N-type semiconductor have more potential energy than the electrons in the
metal.
The energy band diagram of the metal and n-type semiconductor after
contact is shown in the below figure.
When the metal is joined with the n-type semiconductor, a device is created
known as schottky diode. The built-in-voltage (Vbi) for schottky diode is
given by the difference between the work functions of a metal and n-type
semiconductor.
diode rectifier .
Their current density and low forward voltage drop mean that less