Sei sulla pagina 1di 24

Microcomputer Peripheral LSIs

MN1380 Series
CMOS LSIs for Voltage Detection

Overview Pin Assignment


The MN1380 series are elements that monitor the power
supply voltage supplied to microcomputers and other LSI
systems and issue reset signals for initializing the system
after the power is first applied or for preventing runaway
23
operation when the supply voltage fluctuates.

ue e/
MN1380 - R
There is a choice of three output types: CMOS output,
N-channel open drain output, and inverted CMOS out-
put. There are also three package types: M, TO-92, and a

tin nc
mini type for surface mounting.

d
Choose the ideal element for your application from the
series' wide selection of detection ranks (17 ranks between 3 2 1
2.0 and 4.9 volts), output types, and package types.

n.
M type package
on na

io
Features

at
Three-pin element requiring no adjustment

m
Wide selection of detection ranks (17 ranks between

or
2.0 and 4.9 volts)

f
en in
Highly precise detection voltage 1381
sc te

c/ st
Detection voltage with hysteresis characteristic 23R
t/s ate
∆VD = 50 mV for ranks C to K
ne t l
∆VD = 100 mV for ranks L to U
c. u

Low current consumption: IDD = 1µA (typ.) for VDD


Di ain

ni bo

=5V
so a

Low fluctuation in detection voltage with tempera- 1 2 3


na RL

ture (typ. 1 mV/˚C) TO-92 type package


pa U

Wide selection of output types: CMOS output, N-


:// g

channel open drain output, and inverted CMOS


tp in

output
M

ht llow

2
Wide selection of package types: M, TO-92, and a
o

mini type for surface mounting.


tf

LCR
si

Applications
vi
e

Battery checkers 1 3
s
ea

Power outage detectors 1=OUT


Pl

Level discriminators 2=VDD


3=VSS
Memory backup systems Mini type package
Microcomputer reset circuits
Reset circuits for other electronic circuits

SAG00003CEM 1
MN1380 Series Microcomputer Peripheral LSIs

MN1380 Series Naming Conventions

The MN1380 series offers a wide selection of detection ranks, output types, package types, and packaging. All
combinations use the following naming conventions. When ordering, be sure to give the correct part number using
these naming conventions.

MN13801–R (TA)
Winding direction for tape packaging
(TA) ...... Tape packaging for TO-92 type package
(TX) ...... Embossed tape packing for mini type package

ue e/
(TW) ..... Embossed tape packing for mini type package
For further details, see the package specifications.

tin nc
Detection voltage rank (C to U)

d
Output type:
Blank ········ CMOS output

n.
1 ················ N-channel open drain output
on na

io
2 ················ inverted CMOS output

at
m
or
Package:

f
en in
0 ················ M type package
sc te

c/ st
1 ················ TO-92 type package
t/s ate
2 ················ Mini type package
ne t l
c. u
Di ain

ni bo

Matsushita Electronics Corporation MN1380 series of voltage detection CMOS


so a

LSIs with low current consumptions


na RL
pa U

(Example)
:// g
tp in

MN13821–R (TW)
M

ht llow

Embossed tape packaging


o
tf
si

R rank (detection voltage of 4.0 to 4.3 V)


vi
s e

N-channel open drain output


ea
Pl

Mini type package

MN1380 series of voltage detection CMOS LSIs with low current consumption

Minimum Packaging Unit

Bulk (M and TO-92 types) ·············· 1,000


Magazine (Mini type) ······················ 50
Taping (Mini and TO-92 types) ······· 3,000

2
Microcomputer Peripheral LSIs MN1380 Series

Series Lineup
Output Package M type Package TO-92 type Package Mini type Package
CMOS output MN1380 MN1381 MN1382
N-channel open drain output MN13801 MN13811 MN13821
Inverted CMOS output MN13802 MN13812 MN13822

Detection Ranks (on Voltage)


Detection Voltage for Drop in Power Supply Voltage (VDL) Detection Voltage Hysteresis Width (∆VD)
Rank Unit Unit
min max min max
C 2.0 2.2

ue e/
D 2.1 2.3
E 2.2 2.4
V 50 300 mV
F 2.3 2.5

tin nc
d
G 2.4 2.6
H 2.5 2.7
J 2.6 2.9
V 50 300 mV

n.
K 2.8 3.1
on na

io
L 3.0 3.3

at
M 3.2 3.5

m
or
N 3.4 3.7

f
en in
P 3.6 3.9
sc te

c/ st
Q 3.8 4.1 V 100 300 mV
R 4.0 4.3
t/s ate
ne t l
S 4.2 4.5
c. u
Di ain

T 4.4 4.7
ni bo

U 4.6 4.9
so a
na RL
pa U
:// g
tp in
M

ht llow
o
tf
si
vi
s e
ea
Pl

3
MN1380 Series Microcomputer Peripheral LSIs

Block Diagram

2
VDD

Voltage +
Reference 1 Comparator

*1 1
Level Converter Output Circuit OUT
+

ue e/
Voltage Comparator
Reference 2 –
3
VSS

tin nc
d
Note *1: Circuits vary slightly depending on the output type (CMOS output, N-channel open drain output, or inverted CMOS

n.
output)
on na

io
at
Pin Descriptions

m
or
Pin No. Symbol Function Description

f
1 OUT Reset signal output pin

en in
2 VDD Power supply pin
sc te

c/ st
3 VSS Ground pin t/s ate
ne t l
c. u
Di ain

ni bo
so a
na RL
pa U
:// g
tp in
M

ht llow
o
tf
si
vi
s e
ea
Pl

4
Microcomputer Peripheral LSIs MN1380 Series

Absolute Maximum Ratings VSS=0V, Ta=25˚C


Parameter Symbol Rating Unit
Power supply voltage VDD 7.0 V
Output voltage VO – 0.3 to VDD +0.3 V
Operating ambient temperature Ta –20 to +70 ˚C
Storage temperature Tstg –55 to +125 ˚C

Recommended Operating Conditions VSS=0V, Ta=25˚C


Parameter Symbol Conditions min typ max Unit
VDD See Figures 1 and 4. 1.5 6.0 V

ue e/
Power supply
voltage

Electrical Characteristics

tin nc
d
1) DC Characteristics VSS=0V, Ta=–20˚C to +70˚C
Parameter Symbol Conditions min typ max Unit
Power supply current IDD VDD = 5 V *1
1 5 µA

n.
Load resistance = 10 kW
on na

io
Detection voltage for drop

at
VDL *2 *2 V

m
in power supply voltage *2 Ta=25˚C

or
Detection voltage hysteresis See Figures 1 and 4.
∆VD *2 *2

f
mV

en in
width *2
sc te

c/ st
"H" level output voltage VOH CMOS output IOH=– 40µA 0.8VDD VDD
t/s ate
Inverted VDD=1.8V VDD V
0.8
ne t l

CMOS output IOH=– 0.5mA –1.5


c. u
Di ain

ni bo

"L" level output voltage VOL N-channel open VDD=1.8V VSS 0.4
so a

drain output IOL=0.7mA


V
na RL

Inverted VDD=6.0V VSS 0.6


pa U

CMOS output IOH=0.3mA


:// g
tp in

Notes
M

ht llow

*1: This includes the output pin's leakage current.


*2: For particulars, see the detection voltage rank table.
o
tf
si
vi
s e
ea
Pl

5
MN1380 Series Microcomputer Peripheral LSIs

Electrical Characteristics (continued)


2) AC Characteristics VSS=0V, Ta=25˚C
Allowable Value (typ)
Parameter Symbol Conditions MN1380 MN13801 MN13802 Unit
MN1381 MN13811 MN13812
Rank MN1382 MN13821 MN13822
C
D
E 3.0 2.5 230.0
F

ue e/
G
See H
Reset release time tOH Figures J 3.0 3.0 100.0 µs

tin nc
2 and 3. K

d
L
M
N

n.
on na

io
P

at
Q 2.0 4.0 30.0

m
or
R

f
S

en in
sc te

c/ st
C t/s ate
ne t l
D
c. u

E 250.0 160.0 3.0


Di ain

ni bo

F
so a
na RL

G
See H
pa U

Reset time tOL Figures J 115.0 100.0 3.0 µs


:// g
tp in

2 and 3. K
M

ht llow

L
o

M
tf

N
si
vi

P
e

Q 15.0 35.0 3.0


s
ea

R
Pl

S
T

6
Microcomputer Peripheral LSIs MN1380 Series

Description of Operation

VDD

VDH
VDL

1.5V

ue e/
0V
t
CMOS output, N-channel MN1380/1381/1382

tin nc
open drain output MN13801/13811/13821
VOUT

d
tOH tOH

n.
on na

io
at
tOL tOL

m
or
0V

f
t

en in
Inverted CMOS
sc te

c/ st
output Figure MN13802/13812/13822
VOUT t/s ate
ne t l

tOL
c. u
Di ain

ni bo

tOL
so a
na RL

tOH tOH
pa U
:// g

0V
tp in

t
M

ht llow

Figure 1. Description of Operation


o
tf
si
vi
e

Notes
s

1: Output cannot be specified for power supply voltages under 1.5 V because operation is not guaranteed for that range.
ea

2: VDL: Detection voltage for drop in power supply voltage


Pl

VDH: Detection voltage for rise in power supply voltage


tOL : Time lag between the time that the power supply voltage reaches the detection voltage (VDL or VDH) and the time that the
output pin (OUT) goes to "L" level.
tOH : Time lag between the time that the power supply voltage reaches the detection voltage (VDL or VDH) and the time that
the output pin (OUT) goes to "H" level.
3: These characteristics for the N-channel open drain output are when a load resistor is connected between the OUT and VDD
pins.

7
MN1380 Series Microcomputer Peripheral LSIs

Description for Measuring the Output Characteristics

VDD
6.0V

ue e/
1.6V

0V
t
6.0V

tin nc
CMOS output, N-channel

d
open drain output

MN1380/1381/1382
MN13801/13811/13821

n.
on na

io
tOH

at
1.5V

m
tOL

or
1.0V

f
en in
0V
sc te

c/ st
t
Inverted CMOS output MN13802/13812/13822
t/s ate
ne t l
6.0V
c. u
Di ain

ni bo
so a
na RL

1.6V tOH
1.5V
pa U
:// g

tOH
tp in

1.0V
M

ht llow

0V
o

t
tf
si
vi

Figure 2. Description chart of Measuring the Output Characteristics


s e
ea
Pl

100kΩ Switch: Connect when measuring


N-channel open drain output
(MN13801/MN13811/MN13821)

VDD MN1380 Series


100pF
VOUT

Figure 3. Circuit for Measuring the Output Characteristics

8
Microcomputer Peripheral LSIs MN1380 Series

Description for Measuring the I/O Characteristics

VOUT

CMOS output, N-channel


open drain output

MN1380/1381/1382
MN13801/13811/13821

ue e/
tin nc
d
∆VD

n.
on na

io
at
Operation indeterminate

m
or
0

f
0 1.5V VDD

en in
VDL VDH
sc te

c/ st
VOUT
Inverted CMOS output
t/s ate
ne t l

MN13802/13812/13822
c. u
Di ain

ni bo
so a
na RL
pa U
:// g
tp in

∆VD
M

ht llow
o
tf
si
vi

Operation
e

indeterminate
s

0
ea

0 1.5V VDD
Pl

VDL VDH

Figure 4. Description chart for Measuring the I/O Characteristics

Notes
1: Output cannot be specified for power supply voltages under 1.5 V because operation is not guaranteed for that range.
2: VDL: Detection voltage for drop in power supply voltage
VDH: Detection voltage for rise in power supply voltage
3: These characteristics for the N-channel open drain output are when a load resistor is connected between the OUT and VDD pins.

9
MN1380 Series Microcomputer Peripheral LSIs

Application Circuit Example

Connect resistors, capacitors, and the like only to the output pin on the MN1380 series element. Note that connect-
ing them to the Power source pins changes VDH, VDL, and ∆VD.

Sample Circuit 1 Sample Circuit 2

ue e/
VDD VDD

OUT R OUT

tin nc
d
MN1380 MN1380
Series Series

C C

n.
on na

io
at
m
f or
en in
sc te

c/ st
Select the values of R and C to match the application.
t/s ate
ne t l
c. u
Di ain

ni bo
so a
na RL
pa U
:// g
tp in
M

ht llow
o
tf
si
vi
s e
ea
Pl

10
Microcomputer Peripheral LSIs MN1380 Series

Package Dimensions (Unit: mm)

M type package

6.9
1.5 2.5
1.5 1.0

1.0

ue e/
0.4

4.5
tin nc
d
0.7R

4.1

n.
on na

io
at
0.85 0.55±0.1 0.45±0.1

m
1.25

f or
en in
2.5±0.5 2.5±0.5
1.25
sc te

c/ st
t/s ate
ne t l
c. u
Di ain

ni bo
1.25

1 2 3
so a
na RL
pa U
:// g
tp in
M

ht llow
o
tf
si
vi

Note) The package will be changed to lead-free type (M3A). See the new package dimensions section later of this datasheet.
s e
ea
Pl

11
MN1380 Series Microcomputer Peripheral LSIs

Package Dimensions (Unit: mm)(continued)

TO-92 type package

5.0±0.2 4.0±0.2

5.1±0.2

ue e/
tin nc
d
13.5±0.5

n.
on na

io
at
m
f or
en in
sc te

c/ st
t/s ate
+0.2
0.45 -0.1
ne t l
c. u

2.54±0.15 2.3±0.2
Di ain

ni bo

1 2 3
so a
na RL
pa U
:// g
tp in
M

ht llow
o
tf
si
vi

Note) The package will be changed to lead-free type (SSIP003-P-0000S). See the new package dimensions section later of this
e

datasheet.
s
ea
Pl

12
Microcomputer Peripheral LSIs MN1380 Series

Package Dimensions (Unit: mm)(continued)

Mini type package

+0.2
2.8 -0.3
+0.25
0.65±0.15 1.5 -0.05 0.65±0.15

0.5

ue e/ 0.4 -0.05
+0.1
0.95
1.9±0.2

2.9 -0.05
+0.2
tin nc
d
0.95
1.45

n.
0.5

on na

io
at
m
f or
en in
-0.05
+0.1

+0.2
-0.1
sc te

c/ st
0.16

ni bo 0.8
c. 0 to 0.1u 1.1
t/s ate
ne t l
Di ain

0.4±0.2 0.1 to 0.3


so a
na RL
pa U
:// g
tp in
M

ht llow
o
tf
si
vi

Note) The package will be changed to lead-free type (MINI-3DC). See the new package dimensions section later of this
e

datasheet.
s
ea
Pl

13
MN1380 Series Microcomputer Peripheral LSIs

Reference Characteristics

The following characteristics curves represent results from a specific sample therefore they do not guarantee the
characteristics for the final product.

1.4

1.2

1.0 VSS OUT

ue e/
0.8
IDD(µA )

VDD

tin nc
0.6 A

d
0.4 V

n.
0.2
on na

io
at
0

m
0 1.0 2.0 3.0 4.0 5.0 6.0 7.0

or
VDD(V)

f
en in
sc te

c/ st
Figure 5.a. IDD vs. VDD Characteristic (Rank Q)
t/s ate
Figure 5.b. Measurement Circuit
ne t l
c. u
Di ain

ni bo
so a
na RL

2.0
pa U
:// g
tp in
M

ht llow

VSS OUT
o

1.5
tf
si
IDD(µA )

VDD
vi
e

A
s
ea

1.0
Pl

5V

0.5
–40 –20 0 20 40 60 80

Ambient temperature, Ta (˚C)

Figure 6.a. IDD Temperature Characteristic (Rank Q) Figure 6.b. Measurement Circuit

14
Microcomputer Peripheral LSIs MN1380 Series

Reference Characteristics (continued)

4.8

4.6

4.4 VSS OUT

4.2
VDH

ue e/
VDD V
VDL,VDH(V)

4.0
VDL

3.8
V

tin nc
d
3.6

3.4

n.
–40 –20 0 20 40 60 80
on na

io
Temperature Ta(˚C)

at
m
f or
en in
Figure 7.a. VDL/VDH Temperature Characteristic (Rank Q) Figure 7.b. Measurement Circuit
sc te

c/ st
t/s ate
ne t l
c. u
Di ain

ni bo

0.3
so a
na RL

0.25
pa U
:// g

VSS OUT
tp in

0.2
M

ht llow

VDD V
0.15
o
∆VD(V)

tf
si

0.1
vi

V
s e
ea

0.05
Pl

0
–40 –20 0 20 40 60 80
Ambient temperature, Ta (˚C)

Figure 8.a. ∆VD Temperature Characteristic (Rank Q) Figure 8.b. Measurement Circuit

15
MN1380 Series Microcomputer Peripheral LSIs

Reference Characteristics (continued)

3
–30˚C
Room temperature
80˚C
VSS OUT
2

ue e/
VDD
IOL(mA)

tin nc
1

d
1.8V
V

n.
on na

io
0
0 0.5 1.0 1.5 2.0 2.5 3.0

at
m
VOL(V)

f or
en in
Figure 9.a. IOL vs. VOL Characteristic Figure 9.b. Measurement Circuit
sc te

c/ st
t/s ate
ne t l
c. u
Di ain

ni bo
so a
na RL

20
–30˚C
pa U

Room temperature
:// g
tp in

15
M

ht llow

80˚C VSS OUT


o
tf

VDD
| IOH | (mA)

10
si
vi

A
e

5V
s
ea

5 V
Pl

0
0 1 2 3 4 5
VOL(V)

Figure 10.a. IOH vs. VOH Characteristic Figure 10.b. Measurement Circuit

16
Microcomputer Peripheral LSIs MN1380 Series

Reference Characteristics (continued)

2.5

2.0

VSS OUT

ue e/
1.5
IOL(mA)

VDD

A
1.0

tin nc
1.8V

d
V
0.5

n.
on na
0

io
–40 –20 0 20 40 60 80

at
Ambient temperature, Ta (˚C)

m
f or
en in
Figure 11.a. IOL vs. Temperature Characteristic Figure 11.b. Measurement Circuit
sc te

c/ st
t/s ate
ne t l
c. u
Di ain

ni bo
so a
na RL

7.0
pa U
:// g

6.5
tp in

VSS OUT
M

ht llow
| IOH | (mA)

6.0
o

VDD
tf
si

A
vi

5.5
e

5V
s

V
ea

5.0
Pl

4.5
–40 –20 0 20 40 60 80
Ambient temperature, Ta (˚C)

Figure 12.a. IOH vs. Temperature Characteristic Figure 12.b. Measurement Circuit

17
MN1380 Series Microcomputer Peripheral LSIs

TO-92 Type Package Taping-Specifications (MN1381/MN13811/MN13812)

∆h1 0 ∆h2
A1
P1 P T

A
H

W2
l1 H1
H0

ue e/
t1
t2
W0

W
d
F1 F2

tin nc
d
Drawing direction P0 øD0

n.
Figure 13. TO-92 Type Package Taping-Dimensions (Ammunition pack)
on na

io
at
m
TO-92 Type Package Taping Dimensions (Ammunition pack)

or
Name Symbol Length (mm) Name Symbol Length (mm)

f
en in
Product height* A 5.3 max Adhesive tape width W0 6.0±0.5
sc te

c/ st
Product width* A1 5.2 max t/s ate Feed hole position W1 9.0±0.5
Product thickness* T 4.2 max Adhesive tape position W2 0.5 max
ne t l

Lead width* d 0.45 +0.15 Distance to top of product H 25.0 max


c. u

– 0.1
Di ain

ni bo

Taped lead length l1 2.0 max Distance to H0 19.0±0.5


so a

Product pitch P 12.7±1.0 bottom of product


na RL

Feed hole pitch P0 12.7±0.3 Lead clinch height H1 16.0±0.5


pa U

Feed hole position P1 6.35±0.5 Feed hole diameter D0 4.0±0.2


:// g

Lead spacing F1, F2 2.5 +0.5 Tape thickness t1 0.7±0.2


tp in

– 0.2
M

ht llow

Product deflection angle ∆h1, ∆h2 2.0 max Total tape thickness t2 1.5 max
Tape width W 18.0 +1.0
o

– 0.5
Note*1: For further details, see the specifications issued separately.
tf
si
vi

25 elements (example)
s e
ea

Leave the space for at


Pl

W H D
least three elements
330 250 41

Unit: mm
B
H

W D

Figure 14. Box Dimensions for TO-92 Type Packages with Ammunition pack

18
Microcomputer Peripheral LSIs MN1380 Series

Embossed Taping Specifications for Mini Type Package (MN1382/MN13821/MN13822)

There is a choice of two orientations, TW and TX, for the product relative to the tape.

TW Tape feed hole TX Tape feed hole

Drawing Drawing
direction direction

ue e/
(Marking surface on top) (Marking surface on top)

tin nc
Figure 15. TW Orientation Figure 16. TX Orientation

d n.
1.75±0.1

Unit: mm
on na
+0.1

io
ø1.5 -0 4.0±0.1

at
en t in 1.75±0.1
rm
t+0.3±0.1
3.5±0.05

fo
8.0±0.3

c/ 3.3±0.1
A B
sc te

s
t/s ate
ne t l

3.2±0.1
c. u

4.0±0.1
Di ain

ni bo

Product orientation A is labeled TW; orientation B, TX.


so a
na RL

Figure 17. Embossed Taping Dimensions for Mini Type Package


pa U
:// g
tp in
M

ht llow

Unit: mm
o

ø21±0.8
tf
si
vi
s e
ea

ø178±2.0
ø80±1.0
ø13±0.5
Pl

0.5

2±0.5

10±1.5 3,000 packages per reel

Figure 18. Embossed Taping Reel Dimensions for Mini Type Package

19
MN1380 Series Microcomputer Peripheral LSIs

Reliability Testing Results for MN1380 Series


(1) M type package (MN1380/MN13801/MN13802) and TO-92 type package (MN1381/MN13811/MN13812)
Test Subjects Test Conditions Results
Operating lifetime test VDD=5.5V, Ta=125˚C, t=1000hrs 0/15
High-temperature storage test Ta=150˚C, t=1000hrs 0/15
Low-temperature storage test Ta=–65˚C, t=1000hrs 0/15
High-temperature, Ta=85˚C, RH=85%, t=1000hrs 0/15
high-humidity storage test
High-temperature, VDD=5.5V, Ta=85˚C, RH=85%, t=1000hrs 0/15

ue e/
high-humidity bias test
Thermal shock test Ta=150˚C and –65˚C. 0/15
Five minutes at each temperature for ten cycles

tin nc
Temperature cycle test Ta=150˚C and –65˚C. 0/15

d
Thirty minutes at each temperature for ten cycles
Pressure cooker test Two atmospheres for 50 hours at ambient temperature (Ta) of 121˚C 0/15
Soldering test Ambient temperature (Ta) of 230˚C for five seconds 0/15

n.
Solder heat resistance test Ambient temperature (Ta) of 270˚C for ten seconds 0/15
on na

io
at
(2) Mini type package (MN1382/MN13821/MN13822)

m
Test Subjects Test Conditions Results

or
Operating lifetime test VDD=5.5V, Ta=125˚C, t=1000hrs 0/15

f
en in
High-temperature storage test Ta=150˚C, t=1000hrs 0/15
sc te

c/ st
Low-temperature storage test Ta=–65˚C, t=1000hrs t/s ate 0/15
High-temperature, Ta=85˚C, RH=85%, t=1000hrs 0/15
ne t l

high-humidity storage test


c. u
Di ain

ni bo

High-temperature, VDD=5.5V, Ta=85˚C, RH=85%, t=1000hrs 0/15


so a

high-humidity bias test


na RL

Thermal shock test Ta=150˚C and –65˚C. 0/15


pa U

Five minutes at each temperature for ten cycles


:// g
tp in

Temperature cycle test Ta=150˚C and –65˚C. 0/15


M

ht llow

Thirty minutes at each temperature for ten cycles


Pressure cooker test *1 Two atmospheres for 24 hours at ambient temperature (Ta) of 121˚C 0/15
o
tf

Soldering test Ambient temperature (Ta) of 230˚C for five seconds 0/15
si

Solder heat resistance test *1 Ambient temperature (Ta) of 260˚C for five seconds 0/15
vi
s e

Note*1: Note that the testing conditions for the mini package differ from those for the other two packages.
ea
Pl

20
Microcomputer Peripheral LSIs MN1380 Series

New Package Dimensions (Unit: mm)


• M3A (Lead-free package)

6.90±0.10 2.50±0.10
(1.50)
(1.50) (1.00)
R0.90

ue e/
3.50±0.10
1.00±0.10
(0.40)

4.50±0.10
(1.00)
tin nc 2.25±0.20 2.85±0.20

d
2−R0.70

4.10±0.20

n.
on na
1

io
3

at
0.40+0.10

m
-0.05
(0.85)

f or
en in
0.55±0.10
sc te

c/ st
2.50 2.50 t/s ate
ne t l
c. u
Di ain

ni bo
so a
na RL
pa U
:// g
tp in
M

ht llow
o
tf
si
vi
s e
ea
Pl

21
MN1380 Series Microcomputer Peripheral LSIs

New Package Dimensions (Unit: mm)(continued)


• SSIP003-P-0000S (Lead-free package)

5.00±0.20 4.00±0.20

5.00±0.20
(1.00)

ue e/
(1.00)

tin nc
0.60±0.15 2.30±0.20

d
0.40+0.10
13.30±0.50
0.40±0.10 -0.05

n.
on na

io
at
m
f or
en in
1 3
sc te

c/ st
1.27 1.27
t/s ate
ne t l
c. u
Di ain

ni bo
so a
na RL
pa U
:// g
tp in
M

ht llow
o
tf
si
vi
e
s
ea
Pl

22
Microcomputer Peripheral LSIs MN1380 Series

New Package Dimensions (Unit: mm)(continued)


• MINI-3DC (Lead-free package)

(1.45)
0.40+0.10
-0.05

(0.65)
2

ue e/
+0.25
(0.65)1.50-0.05

tin nc 2.80+0.20
-0.30

d
1 3

n.
0.95 0.95
on na

io
at
1.90+0.20

m
2.90+0.20

or
-0.05

f
en in
sc te

c/ st
+0.10
-0.06
+0.20

+0.30
-0.10

-0.10

t/s ate

0.16
0 to 0.10 1.10
1.20

ne t l
c. u
Di ain

ni bo

Seating plane
so a

0.40±0.20 0.10 to 0.30


na RL
pa U
:// g
tp in
M

ht llow
o
tf
si
vi
se
ea
Pl

23
Request for your special attention and precautions in using the technical information and
semiconductors described in this book
(1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
regulations of the exporting country, especially, those with regard to security export control, must be observed.

(2) The technical information described in this book is intended only to show the main characteristics and application circuit examples
of the products, and no license is granted under any intellectual property right or other right owned by our company or any other
company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other
company which may arise as a result of the use of technical information described in this book.

(3) The products described in this book are intended to be used for standard applications or general electronic equipment (such as office
equipment, communications equipment, measuring instruments and household appliances).
Consult our sales staff in advance for information on the following applications:
– Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support
systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the prod-
ucts may directly jeopardize life or harm the human body.
– Any applications other than the standard applications intended.

ue e/
(4) The products and product specifications described in this book are subject to change without notice for modification and/or im-
provement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product
Standards in advance to make sure that the latest specifications satisfy your requirements.

tin nc
(5) When designing your equipment, comply with the range of absolute maximum rating and the guaranteed operating conditions

d
(operating power supply voltage and operating environment etc.). Especially, please be careful not to exceed the range of absolute
maximum rating on the transient state, such as power-on, power-off and mode-switching. Otherwise, we will not be liable for any
defect which may arise later in your equipment.
Even when the products are used within the guaranteed values, take into the consideration of incidence of break down and failure

n.
mode, possible to occur to semiconductor products. Measures on the systems such as redundant design, arresting the spread of fire
on na

io
or preventing glitch are recommended in order to prevent physical injury, fire, social damages, for example, by using the products.

at
m
(6) Comply with the instructions for use in order to prevent breakdown and characteristics change due to external factors (ESD, EOS,

or
thermal stress and mechanical stress) at the time of handling, mounting or at customer's process. When using products for which

f
en in
damp-proof packing is required, satisfy the conditions, such as shelf life and the elapsed time since first opening the packages.
sc te

c/ st
(7) This book may be not reprinted or reproduced whether wholly or partially, without the prior written permission of Matsushita
t/s ate
Electric Industrial Co., Ltd.
ne t l
c. u
Di ain

ni bo
so a
na RL
pa U
:// g
tp in
M

ht llow
o
tf
si
vi
s e
ea
Pl

Potrebbero piacerti anche