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Mansoor Shaukat
IC Design Philosophy
• Introduction!
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IC Design Philosophy
• Introduction :
Mansoor Shaukat
– We have studied discrete–circuit amplifier
configurations.
– The next domain is integrated–circuit amplifiers.
• There is a difference in IC design philosophy.
– Circuits combine MOS and bipolar transistors in a
technology known as BiMOS or BiCMOS.
– Chip-area considerations dictate that while resistors are
to be avoided, constant current sources are readily
available.
• …contd!
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IC Design Philosophy
• Large capacitors are components external to the IC chip but should be used
Mansoor Shaukat
cautiously to keep number of chip terminals small to avoid high cost.
• CMOS process technologies are continuously improving so that devices
with less than 0.1 µm (100 nm) channel length were being produced as of
2003.
• Advantages?
– These require overdrive voltages of only 0.1 volts or even less.
– However, bipolar circuits can still provide much higher output currents.
– Due to reliability under severe environmental conditions, the bipolar circuits are
preferred for applications in the automotive industry.
• By 2014, CMOS process technologies capable of producing devices with a
14 - nm channel length were in use.
• CMOS is the most popular technology for the implementation of digital
systems due to :
• Small size
• Ease of fabrication and
• Low power dissipation
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IC Design Philosophy
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Typical Values of BJT/MOSFET Parameters
• To pack more transistors on a chip, the trend is to reduce the
minimum allowable channel length.
Mansoor Shaukat
• Magnitude of threshold voltage Vt has been decreasing with
decreasing length. Additionally VDD has been reduced from 5 volts
to 1 volt for newer technologies to keep power dissipation as low as
possible.
• With submicron technologies, channel length modulation effect is
very pronounced. As a result V’A has been steadily decreasing
which causes Early voltage VA = V’AL to become very small so
short-channel MOSFETs exhibit low output resistance.
– Because r0 = VA/ID
• Two major MOSFET capacitances are Cgs and Cgd. We see that:
– Shorter devices exhibit much higher operating speeds and wider
amplifier bandwidths.
• …contd!
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Typical values……contd
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Comparison of Important Characteristics
• MOSFET • BJT
Mansoor Shaukat
• Induce a channel vGS > vt where • Forward-bias EBJ vBE >vBEon
vt = 0.5 to 0.7 V where vBEon = 0.5 V
• vDS > (vGS – vt) • Reverse-bias CBJ
• i – v characteristics • i – v characteristics
• iG = 0 • iB = iC/β
• Input resistance (CS) is infinite • Input resistance (CE) rΠ = β/gm
• Transconductance • Transconductance gm=Ic/VT
gm
id
v gs
k n
W
L
VGS Vt
ID
1
k n
W
VGS Vt 1 VV
2 DS
where 1/VA = λ process-technology parameter
2 L A
or 2 ID
gm
V
GS Vt
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Mansoor Shaukat