STW20NA50

N - CHANNEL ENHANCEMENT MODE

FAST POWER MOS TRANSISTOR

TYPE VDSS R DS(on) ID

STW20NA50 500 V < 0.27 Ω 20 A

■ TYPICAL RDS(on) = 0.22 Ω

■ ± 30V GATE TO SOURCE VOLTAGE RATING
■ 100% AVALANCHE TESTED
■ REPETITIVE AVALANCHE DATA AT 100oC
■ LOW INTRINSIC CAPACITANCES 3
■ GATE GHARGE MINIMIZED 2
1
■ REDUCED THRESHOLD VOLTAGE SPREAD

DESCRIPTION TO-247
This series of POWER MOSFETS represents the
most advanced high voltage technology. The op-
timized cell layout coupled with a new proprietary
edge termination concur to give the device low
RDS(on) and gate charge, unequalled ruggedness
and superior switching performance.
INTERNAL SCHEMATIC DIAGRAM
APPLICATIONS
■ HIGH CURRENT, HIGH SPEED SWITCHING
■ SWITCH MODE POWER SUPPLIES (SMPS)
■ DC-AC CONVERTERS FOR WELDING
EQUIPMENT AND UNINTERRUPTIBLE
POWER SUPPLIES AND MOTOR DRIVE

ABSOLUTE MAXIMUM RATINGS

Symbol Parameter Value Unit

V DS Drain-source Voltage (V GS = 0) 500 V
V DGR Drain- gate Voltage (R GS = 20 kΩ) 500 V
V GS Gate-source Voltage ± 30 V
ID Drain Current (continuous) at T c = 25 o C 20 A
ID Drain Current (continuous) at T c = 100 o C 12.7 A
I DM (•) Drain Current (pulsed) 80 A
o
P tot Total Dissipation at T c = 25 C 250 W
Derating Factor 2 W/ o C
o
T stg Storage Temperature -65 to 150 C
o
Tj Max. Operating Junction Temperature 150 C
(•) Pulse width limited by safe operating area

December 1996 1/9

STW20NA50

THERMAL DATA
o
R thj-case Thermal Resistance Junction-case Max 0.5 C/W
o
R thj-amb Thermal Resistance Junction-ambient Max 30 C/W
o
R thj-amb Thermal Resistance Case-sink Typ 0.1 C/W
o
Tl Maximum Lead Temperature For Soldering Purpose 300 C

AVALANCHE CHARACTERISTICS

Symbol Parameter Max Value Unit

IA R Avalanche Current, Repetitive or Not-Repetitive 20 A
(pulse width limited by T j max, δ < 1%)
E AS Single Pulse Avalanche Energy 1000 mJ
(starting T j = 25 o C, I D = I AR , V DD = 50 V)
E AR Repetitive Avalanche Energy 8 mJ
(pulse width limited by T j max, δ < 1%)
IA R Avalanche Current, Repetitive or Not-Repetitive 12.7 A
(T c = 100 o C, pulse width limited by T j max, δ < 1%)

ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)

OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V(BR)DSS Drain-source I D = 250 µA VGS = 0 500 V
Breakdown Voltage
I DS S Zero Gate Voltage V DS = Max Rating 25 µA
Drain Current (V GS = 0) V DS = Max Rating x 0.8 T c = 125 o C 250 µA
I GSS Gate-body Leakage V GS = ± 30 V ± 100 nA
Current (V DS = 0)

ON (∗)

Symbol Parameter Test Conditions Min. Typ. Max. Unit

V GS(th) Gate Threshold Voltage V DS = V GS I D = 250 µA 2.25 3 3.75 V
R DS(on) Static Drain-source On V GS = 10V I D = 10 A 0.22 0.27 Ω
Resistance
I D(on) On State Drain Current V DS > I D(on) x R DS(on)max 20 A
V GS = 10 V

DYNAMIC

Symbol Parameter Test Conditions Min. Typ. Max. Unit

gfs (∗) Forward V DS > I D(on) x R DS(on)max ID = 10 A 10 17.5 S
Transconductance
C iss Input Capacitance V DS = 25 V f = 1 MHz VGS = 0 3600 4700 pF
C oss Output Capacitance 490 650 pF
C rss Reverse Transfer 140 180 pF
Capacitance

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 STW20NA50

ELECTRICAL CHARACTERISTICS (continued)

SWITCHING ON

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t d(on) Turn-on Time V DD = 250 V I D = 10 A 30 40 ns
tr Rise Time R G = 4.7 Ω V GS = 10 V 55 75 ns
(see test circuit, figure 3)
(di/dt) on Turn-on Current Slope V DD = 400 V I D = 20 A 160 A/µs
R G = 47 Ω VGS = 10 V
(see test circuit, figure 5)
Qg Total Gate Charge V DD = 400 V ID = 20 A V GS = 10 V 150 195 nC
Q gs Gate-Source Charge 18 nC
Q gd Gate-Drain Charge 72 nC

SWITCHING OFF

Symbol Parameter Test Conditions Min. Typ. Max. Unit

t r(Vof f) Off-voltage Rise Time V DD = 400 V I D = 20 A 40 55 ns
tf Fall Time R G = 4.7 Ω V GS = 10 V 25 35 ns
tc Cross-over Time (see test circuit, figure 5) 75 100 ns

SOURCE DRAIN DIODE

Symbol Parameter Test Conditions Min. Typ. Max. Unit

IS D Source-drain Current 20 A
I SDM (•) Source-drain Current 80 A
(pulsed)
VS D (∗) Forward On Voltage I SD = 20 A V GS = 0 1.6 V
t rr Reverse Recovery I SD = 20 A di/dt = 100 A/µs 610 ns
Time V DD = 100 V T j = 150 o C
Q rr Reverse Recovery (see test circuit, figure 5) 10.1 µC
Charge
I RRM Reverse Recovery 33 A
Current
(∗) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %
(•) Pulse width limited by safe operating area

Safe Operating Areas Thermal Impedance

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STW20NA50

Derating Curve Output Characteristics

Transfer Characteristics Transconductance

Static Drain-source On Resistance Gate Charge vs Gate-source Voltage

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Capacitance Variations Normalized Gate Threshold Voltage vs

Temperature

Normalized On Resistance vs Temperature Turn-on Current Slope

Turn-off Drain-source Voltage Slope Cross-over Time

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Switching Safe Operating Area Accidental Overload Area

Source-drain Diode Forward Characteristics

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 2: Unclamped Inductive Waveforms

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 STW20NA50

Fig. 3: Switching Times Test Circuits For Fig. 4: Gate Charge Test Circuit
Resistive Load

Fig. 5: Test Circuit For Inductive Load Switching

And Diode Recovery Times

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STW20NA50

TO-247 MECHANICAL DATA

mm inch
DIM.
MIN. TYP. MAX. MIN. TYP. MAX.

A 4.7 5.3 0.185 0.208

A1 2.87 0.113

A2 1.5 2.5 0.059 0.098

b 1 1.4 0.039 0.055

b1 2.25 0.088

b2 3.05 3.43 0.120 0.135

C 0.4 0.8 0.015 0.031

D 20.4 21.18 0.803 0.833

e 5.43 5.47 0.213 0.215

E 15.3 15.95 0.602 0.628

L 15.57 0.613

L1 3.7 4.3 0.145 0.169

Q 5.3 5.84 0.208 0.230

ØP 3.5 3.71 0.137 0.146

C
A

A1
A2

D L

Q L1
b1

ø
e
E

b2

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 STW20NA50

Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.

© 1996 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved

SGS-THOMSON Microelectronics GROUP OF COMPANIES

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