Subject: Radio Frequency Integrated Circuits Code: 13A04804 DEPT: ECE Branch&class: ECE-IV-II

Faculty Name: N Sreenivasulu Reddy Academic Year: 2017-18

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QUESTION BANK
UNIT -1

INTRODUCTION RF SYSTEMS

1. Explain in detail about the architecture of Radio Frequency system.

2. Define the T-match circuit and find out the net Q factor of the circuit.

3. Explain transmission medium and reflections in radio frequency system.

4. Draw and explain in detail about IC interconnects of capacitors, Resistors & Inductors

5. Write about RLC Networks with network examples

Objective Questions
1. In the following which is not discipline to design RF Circuit. [ ]
a) Random signals b) CAD Tools c) Time constant d) Microwave theory.
2. In simple RF Communications Which amplifier are used [ ]
a) Single tuned amplifier b) stagger tuned amplifier c) Multistage amplifier d) Power amplifier
3) To design RFCircuit which is the shape is used [ ]
a) Pentagon b) Hexagon c) triangle d) Rectangle
4) What is the value of Centre frequency in Generic RF transceiver [ ]
a) fc = 3.4 GHz b) 2 GHz c) 2.4 GHz d) 1.4 GHz
5) In parallel RLC tankcircuit the quality factor can be find as [ ]
a) Q = ω (Energy stored)/(Power dissipated) b) Q = (Energy stored)/(Average Power dissipated)
c) Q = ω (Energy stored)/ (Average Power dissipated) d) Q = ω (Energy stored)/ (Power dissipated)
6) The average power can be found as [ ]
2 2 2 2 2
a) Pavg = I PK R b) Pavg = 1/2 ( I PK R ) c) Pavg = 1/2 ( I PK R ) d) Pavg = 1/2 ( I PK R )
7) Characteristic impedance of the parallel RLC network [ ]
a) Z0= L/C b) Z0 = √ (L/C) c) Z0 = √ (LC) d) Z0 = (LC)
8) The total energy stored in a parallel RLC network [ ]
2
a) Etotal = 1/2 C ( IPK R ) b) Etotal = 1/2 ( I PK R )
2
c) Etotal = 1/2 C ( I PK R ) d)Etotal = 1/2 C ( I PK ) 2
9) What is the quality factor for RLC parallel network? [ ]
a) Q = ω0RC b) Q = ω0 / RC c) Q = ω0C d) Q = ω0R
10) In maximum power transfer theorem [ ]
a) │ VR2 │/ ( RL ) = │VS│2 / ( ( RL +RS )2 +(XL +XS)2 ) b)│ VR2 │ / ( RL ) = RS │VS │2 / ( ( RL +RS )2 +(XL +XS)2 )
c) │ VR2 │ / ( RL ) = RS/ ( ( RL +RS )2 d) │ VR2 │ / ( RL ) = RL │VS │2 / (XL +XS)2
11) In parallel RLC network whatis ‘Q’ [ ]
a) Q = ω0 LS / Rs b) Q = LS / Rs c) Q = RS / Ls d) Q = ω0 RS / Ls
12)In parallel RLC network what is LP [ ]
2 2 2 2 2 2
a) LP = (Q +1) / Q b) LP= LS [(Q +1) / Q ] c) LP = LS [(Q +1) / Q ] d) LP = LS (Q +1)
13) In parallel RLC network what is RP [ ]
2 2
a) RP = (Q +1 ) b) RP = RS (Q +1 ) c) RP = RS (Q +1 ) d) RP = RS
14) In parallel RLC network what is CP [ ]
2 2
a) CP = Cs( (Q ) / (Q +1 )) b) CP = Cs ( (Q ) / (Q +1 ))
2 2
c) CP = ( (Q ) / (Q +1 ) ) d) CP = Cs ( (Q2 ) / (Q2 +1 ) )
15) In L- matching circuits what is the value of RP [ ]
a) RP = LS / C b) RP = ( 1/Rs ) (LS / C)c) RP = ( 1/Rs ) ( C/ LS) d) RP = ( C/ LS)
16) In L- matching circuits what is the value of ‘Q’ [ ]
a) Q = RP / Rs b) Q = Rs / Rp c) Q = √ (Rs / Rp ) d)Q = √ (Rp / Rs )
17) In π – matching circuits value of Q for right-hand L section [ ]
a) Qright = √ ( ( RP / RI ) -1 ) b) Qright = √ ( RI / RP)
c) Qright = √ ( ( RP / RI ) +1 ) d) Qright = √ ( RP / RI )
18) In π – matching circuits value of Q for Left-hand L section [ ]
a) Qleft = √ ( ( RIN / RI ) +1 ) b) Qleft = √ ( ( RI / RIn ) +1 )
c) Qleft = √ ( ( RI / RIn ) - 1 ) d) Qleft = √ ( ( RIn / RI ) +1 )
19) In π – matching circuits overall network Q is find by [ ]
a) Q = √ ( ( RIn / RI ) -1 ) - √ ( Rp / RI ) -1 b) Q = √ ( ( RIn / RI ) -1 ) + √ ( Rp / RI ) -1
c) Q = √ ( ( RI / RIn ) -1 ) - √ ( Ri / Rp ) -1 d) Q = √ ( ( RI / RIn ) -1 ) + √ ( Ri / Rp ) -1
20) In π – matching circuits the total inductance is found [ ]
a) L1 + L2 =( R I /ω0 ) b) L1 + L2 = ( Q /ω0 )
c) L1 + L2 = Q ( R I /ω0 ) d) L1 + L2 = Q R I
21) In π – matching circuits the value of capacitor ‘ C1’ is found [ ]
a) C1 = Qleft / RIn b) C1 = Qleft / ω0 c) C1 = Qleft / ω0RIn d) C1 = 1 / ω0RIn
22) In π – matching circuits the value of capacitor ‘ C2’ is found [ ]
a) C2 = Qright / ω0Rp b) C2 = Qright / Rp c) C2 = Qright / ω0 d) C2 = Qright / 2Rp
23) What is the value of image resistance in π – matching circuits [ ]
2
a) RI= (RIn + Rp) / (Q) 2
b) RI = (√RIn + √Rp) / (Q)
2 2

c) RI= RIn - Rp / (Q) 2

d) RI = (√RIn - √Rp)2 / (Q)2
24) In T – matching circuits overall network Q is find by [ ]
a) Q = √ ( ( RI / RIN ) +1 ) + √ ( RI / RS ) +1 b) Q = √ ( ( RI / RIN ) +1 ) - √ ( RI / RS ) +1
c) Q = √ ( ( RI / RIN )) + √ ( RI / RS ) d) Q = √ ( ( RIn / RI ) ) + √ ( RIn / RS )
25) In T-match circuits the capacitance can be calculated as [ ]
a) C1 + C2= Q / ω0 b) C1 + C2 = Q / RI c) C1 + C2 = Q / ω0 RI d)C1 + C2 = 1 / ω0 RI
 QUESTION BANK
UNIT -2

A REVIEW OF MOS DEVICE PHYSICS

1. Derive an expression for characteristic impedance and propagation constant of lossy transmission line.

2. Discuss the methods of open circuit time constant & Short circuit time constants for estimating the
bandwidth of the system.

3. Prove that a long channel MOSFET transconductance depends only on the square root of bias current

4. Illustrate the following a. Delay of systems in cascade b. Risetime of systems in cascade

5. Explain about Shunt-Series and Tuned amplifiers.
Objective Questions
1. MOSFET is a ________ controlled device [ ]
A. Voltage B. Current C. Power D. None
2. Long channel is actually ____ electric field [ ]
A. High B. Low C. Medium D. None
3. Short channel is actually ____ electric field [ ]
A. Medium B. High C. High D. None
4. The primary high-field effect is_______ [ ]
A. Frequency modulation B. Current Saturation C. Voltage Saturation D. Velocity saturation
5. In long-channel devices, the saturation drain current is corresponding to ___ of the channel. [ ]
A. Pinch-off. B. Vt C. Carrier velocity D.None
6. In short-channel devices, the saturation drain current is corresponding to __of the channel. [ ]
A. Pinch-off. B. Vt C. Carrier velocity D.None
7. _____distinguishes "long-channel" from "short-channel". [ ]
A. Electric field strengths. B.Vgs C.Vds D.None
8. Kirchhoff's voltage and current " laws" are used to approximate_____ regime [ ]
A. Lumped B.Distributed C. Both A and B D. None
9. _________ parameter descriptions of circuits is used for ICs. [ ]
A. Distributed B. Lumped C. Both A and B D. None
10. Net magnetic charge would cause________ in the magnetic field [ ]
A. Convergence B. Curl C. Divergence D. None
11. Changing magnetic field causes _________ in the electric field. [ ]
A. Convergence B. Curl C. Divergence D. None
12. Reduction of "parasitics" leads to ______ bandwidth [ ]
A.Infinite B.Decrease C. Increase D. Zero
13. In ladder network the ratio of Zin to R is known as _______ [ ]
A. Golden ratio B. Golden section C. A or B D. None
14. The characteristic impedance Zo of infinite transmission line [ ]
A.C / L B.√LC C.√L/C2 D.√L/C
15. _____tells us the ratio of voltage to current at anyone point in an infinitely long line. [ ]
A. Reflection coefficient B. Propagation constant C. Characteristic impedance D. None
16. _________ quantities the line's attenuation properties. [ ]
A. Reflection coefficient B. Propagation constant C. Characteristic impedance D. None
17. Propagation constant y= [ ]
A. √Z/Y B. √Z-Y C. √Z+Y D. √ZY
18. The point Γ= - I in Schmitt chart corresponds to ____ resistance (or reactance). [ ]
A. Infinite B. Minimum C. Maximum D. Zero
19. The point Γ = I in Schmitt chart corresponds to resistance (or reactance. [ ]
A. Infinite B. Minimum C. Maximum D. Zero
20. Most of RF instruments and coaxial cables have standardized impedances of either __ohms [ ]
A. 75 or 100 B. 10 or 40 C. 50 or 75 D. 100 or 75
21. Propagation constant γ = [ ]
A. α-jβ B. α+jβ C. α/jβ D. α2+jβ
22. Since the attenuation is ________ at all frequencies, a lossless line has no bandwidth limit. [ ]
A. Infinite B. Minimum C. Maximum D. Zero
23. If the load impedance equals the characteristic impedance of the line, Γ= [ ]
A. Infinite B. Minimum C. Maximum D. Zero
24. At lower frequencies ___ is a powerful intuitive aid in the design of high-BW amplifiers. [ ]
A. OCTs B.SCTs C. Both a and b D. None
25. A technique that satisfied requirement of large band width at low cost is known as ___ [ ]
A. Shunt peaking B. Series Peaking C. Both A and B D. None