MJ15022

NPN − MJ15022, MJ15024*
*MJ15024 is a Preferred Device
Silicon Power Transistors

The MJ15022 and MJ15024 are PowerBase power transistors
designed for high power audio, disk head positioners and other linear
applications.
Features
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• High Safe Operating Area (100% Tested) − 2 A @ 80 V
• High DC Current Gain − hFE = 15 (Min) @ IC = 8 Adc 16 AMPERES
• Pb−Free Packages are Available* SILICON POWER TRANSISTORS
200 − 250 VOLTS, 250 WATTS
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage VCEO Vdc
MJ15022 200
MJ15024 250
Collector−Base Voltage VCBO Vdc
MJ15022 350
MJ15024 400
Emitter−Base Voltage VEBO 5 Vdc TO−204AA (TO−3)
Collector−Emitter Voltage VCEX 400 Vdc CASE 1−07
STYLE 1
Collector Current − Continuous IC 16 Adc
− Peak (Note 1) 30
Base Current − Continuous IB 5 Adc MARKING DIAGRAM
Total Device Dissipation @ TC = 25_C PD 250 W

Derate above 25_C 1.43 W/_C
Operating and Storage Junction TJ, Tstg −65 to +200 _C
Temperature Range MJ1502xG
AYWW
THERMAL CHARACTERISTICS MEX
Characteristics Symbol Max Unit
Thermal Resistance, Junction−to−Case RqJC 0.70 _C/W
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not MJ1502x = Device Code
normal operating conditions) and are not valid simultaneously. If these limits are x = 2 or 4
exceeded, device functional operation is not implied, damage may occur and G = Pb−Free Package
reliability may be affected. A = Assembly Location
1. Pulse Test: Pulse Width = 5 ms, Duty Cycle v 10%. Y = Year
WW = Work Week
MEX = Country of Origin
ORDERING INFORMATION
Device Package Shipping
MJ15022 TO−204 100 Units / Tray
MJ15022G TO−204 100 Units / Tray
(Pb−Free)
MJ15024 TO−204 100 Units / Tray
MJ15024G TO−204 100 Units / Tray
(Pb−Free)
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques Preferred devices are recommended choices for future use
Reference Manual, SOLDERRM/D. and best overall value.
© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

February, 2006 − Rev. 10 MJ15022/D
NPN − MJ15022, MJ15024*
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ Characteristic Symbol Min Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
OFF CHARACTERISTICS
ÎÎÎ
Collector−Emitter Sustaining Voltage (Note 2) VCEO(sus) −
(IC = 100 mAdc, IB = 0) MJ15022 200 −
MJ15024 250 −
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
Collector Cutoff Current
ÎÎÎ
(VCE = 200 Vdc, VBE(off) = 1.5 Vdc) MJ15022
ICEX
− 250
mAdc
(VCE = 250 Vdc, VBE(off) = 1.5 Vdc) MJ15024 − 250
Collector Cutoff Current ICEO mAdc
(VCE = 150 Vdc, IB = 0) MJ15022
− 500
(VCE = 200 vdc, IB = 0) MJ15024 − 500
Emitter Cutoff Current IEBO − 500 mAdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
(VCE = 5 Vdc, IB = 0)
SECOND BREAKDOWN
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎÎÎÎÎ
ÎÎÎ
Second Breakdown Collector Current with Base Forward Biased IS/b Adc
(VCE = 50 Vdc, t = 0.5 s (non−repetitive))
5 −
(VCE = 80 Vdc, t = 0.5 s (non−repetitive)) 2 −
ON CHARACTERISTICS
DC Current Gain
(IC = 8 Adc, VCE = 4 Vdc)
hFE
15 60
−
5 −
Collector−Emitter Saturation Voltage VCE(sat) Vdc
(IC = 8 Adc, IB = 0.8 Adc) − 1.4
(IC = 16 Adc, IB = 3.2 Adc) − 4.0
Base−Emitter On Voltage VBE(on) − 2.2 Vdc
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product fT 4 − MHz
(IC = 1 Adc, VCE = 10 Vdc, ftest = 1 MHz)
Output Capacitance
(VCB = 10 Vdc, IE = 0, ftest = 1 MHz)
2. Pulse Test: Pulse Width = 300 ms, Duty Cycle v 2%.
Cob − 500 pF
100 There are two limitations on the powerhandling ability of

50 a transistor: average junction temperature and second
IC, COLLECTOR CURRENT (AMPS)
TC = 25°C breakdown. Safe operating area curves indicate IC − VCE

20
limits of the transistor that must be observed for reliable
10 operation; i.e., the transistor must not be subjected to greater
5.0 dissipation than the curves indicate.
BONDING WIRE LIMITED The data of Figure 1 is based on TJ(pk) = 200_C; TC is
THERMAL LIMITATION variable depending on conditions. At high case
1.0 (SINGLE PULSE) temperatures, thermal limitations will reduce the power that
SECOND BREAKDOWN can be handled to values Ion than the limitations imposed by
LIMITED
second breakdown.
0.2
0.1
0.1 0.2 0.5 10 20 50 100 250 500 1k
VCE, COLLECTOR−EMITTER VOLTAGE (VOLTS)
Figure 1. Active−Region Safe Operating Area
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2
NPN − MJ15022, MJ15024*
TYPICAL CHARACTERISTICS
f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)

4000
3000 TJ = 25°C
Cib 9 TJ = 25°C
8 VCE = 10 V
fTest = 1 MHz
C, CAPACITANCE (pF)
1000 7
6
500
5
Cob 4
3
100 2
1
40 0
0.3 0.5 1 5.0 10 30 50 100 300 0.1 0.3 0.5 1.0 2.0 5.0 10
VR, REVERSE VOLTAGE (VOLTS) IC, COLLECTOR CURRENT (AMPS)
Figure 2. Capacitances Figure 3. Current−Gain — Bandwidth Product
200
TJ = 100°C VCE = 4 V
100 1.8
TJ = 25°C
hFE , DC CURRENT GAIN
50 1.4
V, VOLTAGE (VOLTS)
20
1.0
10 VBE(on) @ VCE = 4 V
0.8 TJ = 25°C
5.0 100°C
VCE(sat) @ IC/IB = 10
0.2 25°C
1.0 100°C
0
0.2 0.5 1.0 2.0 5.0 10 20 0.15 0.5 1.0 2.0 5.0 10 20
IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS)
Figure 4. DC Current Gain Figure 5. “On” Voltage
VCE , COLLECTOR−EMITTER VOLTAGE (VOLTS)
1.8 TJ = 25°C
1.4
1.0
16 A
0.6 8A
IC = 4 A
0.2
0
0.03 0.1 0.2 0.5 1.0 2.0 5.0 10 30
IB, BASE CURRENT (AMPS)
Figure 6. Collector Saturation Region
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3
NPN − MJ15022, MJ15024*
PACKAGE DIMENSIONS
TO−204 (TO−3)
CASE 1−07
ISSUE Z
A NOTES:
1. DIMENSIONING AND TOLERANCING PER ANSI
N Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
C 3. ALL RULES AND NOTES ASSOCIATED WITH
−T− SEATING REFERENCED TO−204AA OUTLINE SHALL APPLY.
PLANE
E
INCHES MILLIMETERS
D 2 PL K DIM MIN MAX MIN MAX
A 1.550 REF 39.37 REF
0.13 (0.005) M T Q M Y M
B −−− 1.050 −−− 26.67
C 0.250 0.335 6.35 8.51
D 0.038 0.043 0.97 1.09
U E 0.055 0.070 1.40 1.77
L −Y−
V G 0.430 BSC 10.92 BSC
H 0.215 BSC 5.46 BSC
2 K 0.440 0.480 11.18 12.19
G B L 0.665 BSC 16.89 BSC
H 1 N −−− 0.830 −−− 21.08
Q 0.151 0.165 3.84 4.19
U 1.187 BSC 30.15 BSC
−Q− V 0.131 0.188 3.33 4.77
0.13 (0.005) M T Y M STYLE 1:

PIN 1. BASE
2. EMITTER
CASE: COLLECTOR
ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
“Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All
operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights
nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications
intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should
Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates,
and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death
associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal
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NPN − MJ15022, MJ15024*

*MJ15024 is a Preferred Device

Silicon Power Transistors

Base Current − Continuous IB 5 Adc MARKING DIAGRAM

Total Device Dissipation @ TC = 25_C PD 250 W

© Semiconductor Components Industries, LLC, 2006 1 Publication Order Number:

100 There are two limitations on the powerhandling ability of

TC = 25°C breakdown. Safe operating area curves indicate IC − VCE

f T, CURRENT−GAIN BANDWIDTH PRODUCT (MHz)

Figure 2. Capacitances Figure 3. Current−Gain — Bandwidth Product

Figure 6. Collector Saturation Region

0.13 (0.005) M T Y M STYLE 1:

PUBLICATION ORDERING INFORMATION

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