Vishay Primary MTP IGBT Power Module

VS-100MT060WDF
www.vishay.com
Vishay Semiconductors
Primary MTP IGBT Power Module
FEATURES
• Buck PFC stage with warp 2 IGBT and FRED Pt®
hyperfast diode
• Integrated thermistor
• Isolated baseplate
• Very low stray inductance design for high speed operation
• Designed and qualified for industrial level
• Material categorization: for definitions of compliance
MTP please see www.vishay.com/doc?99912
BENEFITS
PRIMARY CHARACTERISTICS
• Lower conduction losses and switching losses
FRED Pt® AP DIODE, TJ = 150 °C
VRRM 600 V • Higher switching frequency up to 150 kHz
IF(DC) at 80 °C 11 A • Optimized for welding, UPS, and SMPS applications
VF at 25 °C at 60 A 2.08 V • PCB solderable terminals
IGBT, TJ = 150 °C • Direct mounting to heatsink
VCES 600 V 
VCE(on) at 25 °C at 60 A 1.98 V 
IC at 80°C 83 A 
FRED Pt® CHOPPER DIODE, TJ = 150 °C 
VR 600 V 

IF(DC) at 80 °C 17 A

VF at 25 °C at 60 A 2.06 V

Speed 30 kHz to 150 kHz 
Package MTP 
Circuit configuration Dual forward
ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Repetitive peak reverse voltage VRRM 600 V
FRED Pt TC = 25 °C 17
Maximum continuous forward current
antiparallel IF(DC) A
diode TJ = 150 °C maximum TC = 80 °C 11
Maximum power dissipation PD TC = 25 °C 25 W
Collector to emitter voltage VCES TJ = 25 °C 600 V
Gate to emitter voltage VGE IGES max. ± 250 ns ± 20 V
Maximum continuous collector current TC = 25 °C 121
IGBT IC
at VGE = 15 V, TJ = 150 °C maximum TC = 80 °C 83 A
Clamped inductive load current ILM 300
Repetitive peak reverse voltage VRRM 600 V
FRED Pt Maximum continuous forward current TC = 25 °C 26
IF A
chopper diode TJ = 150 °C maximum TC = 80 °C 17
Maximum operating junction temperature TJ 150
°C
Storage temperature range TStg -40 to +150
Isolation voltage VISOL VRMS t = 1 s, TJ = 25 °C 3500 V
Revision: 09-Oct-17 1 Document Number: 93412

For technical questions within your region: DiodesAmericas@vishay.com, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
VS-100MT060WDF
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ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Blocking voltage BVRRM 0.5 mA 600 - - V
AP diode IF = 60 A - 2.08 2.43
Forward voltage drop VFM V
IF = 60 A, TJ = 125 °C - 2.05 2.3
Collector to emitter
BVCES VGE = 0 V, IC = 0.5 mA 600 - - V
breakdown voltage
Temperature coefficient of
VBR(CES)/TJ IC = 0.5 mA (25 °C to 125 °C) - 0.6 - V/°C
breakdown voltage
VGE 15 V, IC = 60 A - 1.93 2.29
IGBT Collector to emitter voltage VCE(on) V
VGE = 15 V, lC = 60 A, TJ = 125 °C - 2.36 2.80
Gate threshold voltage VGE(th) VCE = VGE, IC = 500 μA 2.9 - 6.0 V
Collector to emitter VGE = 0 V, VCE = 600 V - - 100 μA
ICES
leakage current VGE = 0 V, VCE = 600 V, TJ = 125 °C - - 2.0 mA
Gate to emitter leakage IGES VGE = ± 20 V - - ± 100 nA
IF = 60 A - 2.06 2.53
Forward voltage drop VFM
FRED Pt IF = 60 A, TJ = 125 °C - 1.83 2.26 V
chopper Blocking voltage BVRM 0.5 mA 600 - -
diode VRRM = 600 V - - 75 μA
Reverse leakage current IRM
VRRM = 600 V, TJ = 125 °C - - 0.5 mA
RECOVERY PARAMETER
Peak reverse recovery current Irr IF = 60 A - 67 11 A
AP diode Reverse recovery time trr dI/dt = 200 A/μs - 120 160 ns
Reverse recovery charge Qrr VR = 200 V - 620 850 nC
Peak reverse recovery current Irr IF = 60 A - 4.5 6.0 A
Reverse recovery time trr dI/dt = 200 A/μs - 67 85 ns
FRED Pt Reverse recovery charge Qrr VR = 200 V - 130 250 nC
chopper
diode Peak reverse recovery current Irr IF = 60 A - 9.5 12.0 A
Reverse recovery time trr dI/dt = 200 A/μs - 128 165 ns
Reverse recovery charge Qrr VR = 200 V, TJ = 125 °C - 601 900 nC
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

Total gate charge Qg IC = 60 A - 460 -
Gate to source charge Qgs VCC = 480 V - 160 - nC
Gate to drain (Miller) charge Qgd VGE = 15 V - 70 -
Turn-on switching loss Eon - 0.2 -
Turn-off switching loss Eoff - 0.96 - mJ
Total switching loss Etot - 1.16 -
IC = 100 A, VCC = 360 V, VGE = 15 V
Turn-on delay time td(on) - 240 -
Rg = 5 , L = 500 μH, TJ = 25 °C
Rise time tr - 47 -
ns
Turn-off delay time td(off) - 240 -
Fall time tf - 66 -
PFC IGBT
Turn-on switching loss Eon - 0.33 -
Turn-off switching loss Eoff - 1.45 - mJ
Total switching loss Etot - 1.78 -
IC = 100 A, VCC = 360 V, VGE = 15 V
Turn-on delay time td(on) - 246 -
Rg = 5 , L = 500 μH, TJ = 125 °C
Rise time tr - 50 -
ns
Turn-off delay time td(off) - 246 -
Fall time tf - 71 -
Input capacitance Cies VGE = 0 V - 9500 -
Output capacitance Coes VCC = 30 V - 780 - pF
Reverse transfer capacitance Cres f = 1 MHz - 120 -

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THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

Resistance R TJ = 25 °C - 30 000 - 
B value B TJ = 25 °C/TJ = 85 °C - 4000 - K
THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS
AP FRED Pt diode Junction to case diode thermal resistance - - 4.9
IGBT Junction to case IGBT thermal resistance - - 0.27
RthJC °C/W
FRED Pt
Junction to case diode thermal resistance - - 2.25
chopper diode
Case to sink, flat, greased surface per module RthCS - 0.06 - °C/W
Mounting torque ± 10 % to heatsink (1) - - 4 Nm
Approximate weight - 65 - g
Note
(1) A mounting compound is recommended and the torque should be rechecked after a period of 3 hours to allow for the spread of the
compound.
160 250
140 VGE = 18 V
Case Temperature (°C)
200
Maximum Allowable
120 VGE = 15 V
100 VGE = 9 V
150 VGE = 12 V
IC (A)
80
60 100
40
50
20
0 0
0 20 40 60 80 100 120 140 0 1 2 3 4 5
93412_01 IC - Continuous Collector Current (A) 93412_03 VCE (V)
Fig. 1 - Maximum IGBT Continuous Collector Current vs. Fig. 3 - Typical IGBT Output Characteristics, TJ = 25 °C
Case Temperature
1000 250
100 200
VGE = 18 V
10 150 VGE = 15 V
IC (A)
IC (A)
VGE = 9 V
1 100
VGE = 12 V
0.1 50
0.01 0
1 10 100 1000 0 1 2 3 4 5
93412_02 VCE (V) 93412_04 VCE (V)
Fig. 2 - IGBT Reverse BIAS SOA TJ = 150 °C, VGE = 15 V Fig. 4 - Typical IGBT Output Characteristics, TJ = 125 °C

VS-100MT060WDF
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IF - Instantaneous Forward Current (A)

250 100
90
200 80
70
TC = 125 °C
150 60
TC = 25 °C
IC (A)
50
40 TJ = 150 °C
100
30 TJ = 125 °C
50 20
TJ = 25 °C
10
0 0
5 6 7 8 9 10 0.5 1.0 1.5 2.0 2.5 3.0
93412_05 VGE (V) 93412_08 VF - Anode to Cathode

Forward Voltage Drop (V)
Fig. 5 - Typical IGBT Transfer Characteristics, TJ = 125 °C Fig. 8 - Typical Diode Forward Voltage Characteristics of
Antiparallel Diode, tp = 500 μs
10 160
Allowable Case Temperature (°C) 140

1
120
150 °C
100
ICES (mA)
0.1
80
0.01
60
25 °C
40
0.001
20
0.0001 0
100 200 300 400 500 600 0 5 10 15 20
93412_06 VCES (V) 93412_09 IF - Continuous Forward Current (A)
Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current Fig. 9 - Maximum Continuous Forward Current vs.
Case Temperature Antiparallel Diode
5.0 100
IF - Instantaneous Forward Drop (A)
90
80 TJ = 150 °C
4.5 TJ = 25 °C
70
60
Vgeth (V)
4.0 50 TJ = 125 °C
40
TJ = 25 °C
30
3.5 TJ = 125 °C 20
10
3.0 0
0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.25 0.75 1.25 1.75 2.25 2.75 3.25 3.75
93412_07 IC (mA) 93412_10 VF - Forward Voltage Drop (V)

Fig. 7 - Typical IGBT Gate Thresold Voltage Fig. 10 - Typical PFC Diode Forward Voltage

VS-100MT060WDF
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160 5
Allowable Case Temperature (°C)
140
4
120
Energy (mJ)
100
3
80 Eoff
60 2
Eon
40
1
20
0 0
0 5 10 15 20 25 30 35 40 0 10 20 30 40 50
93412_11 IF - Continuous Forward Current (A) 93412_14 Rg (Ω)
Fig. 11 - Maximum Continuous Forward Current vs. Fig. 14 - Typical IGBT Energy Loss vs. Rg, TJ = 125 °C
Case Temperature PFC Diode IC = 100 A, VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 
0.1 1000
TJ = 150 °C
td(off)
Switching Time (ns)
0.01
td(on)
IR (mA)
0.001 100 tf
0.0001 tr
TJ = 25 °C
0.00001 10
100 200 300 400 500 600 0 20 40 60 80 100 120
93412_12 VR (V) 93412_15 IC (A)

Fig. 12 - Typical FRED Pt Chopper Diode Reverse Current vs. Fig. 15 - Typical IGBT Switching Time vs. IC
Reverse Voltage TJ = 125 °C, VDD = 360 V, VGE = 15 V, L = 500 μH, Rg = 5 
2.0 1000
td(off)
1.6 td(on)
Switching Time (ns)
Energy (mJ)
1.2
100 tf
0.8 Eoff
tr
0.4 Eon
0 10
0 20 40 60 80 100 120 0 10 20 30 40 50
93412_13 IC (A) 93412_16 Rg (Ω)

Fig. 13 - Typical IGBT Energy Loss vs. IC Fig. 16 - Typical IGBT Switching Time vs. Rg, TJ = 125 °C
TJ = 125 °C, VCC = 360 V, VGE = 15 V, L = 500 μH, Rg = 5  IC = 100 A, VCE = 360 V, VGE = 15 V, L = 500 μH

VS-100MT060WDF
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250 180
200 130 TJ = 125 °C

trr (ns)
trr (ns)
TJ = 125 °C
150 80
TJ = 25 °C
TJ = 25 °C
100 30
100 200 300 400 500 100 200 300 400 500
93412_17 dIF/dt (A/μs) 93412_20 dIF/dt (A/μs)

Fig. 17 - Typical trr Antiparallel Diode vs. dIF/dt Fig. 20 - Typical trr Chopper Diode vs. dIF/dt
Vrr = 200 V, IF = 60 A Vrr = 200 V, IF = 60 A
25 20
20
15
TJ = 125 °C
TJ = 125 °C
15
Irr (A)
Irr (A)
10
10 TJ = 25 °C
5 TJ = 25 °C
5
0 0
100 200 300 400 500 100 200 300 400 500

Fig. 18 - Typical Irr Antiparallel Diode vs. dIF/dt Fig. 21 - Typical Irr Chopper Diode vs. dIF/dt
Vrr = 200 V, IF = 60 A Vrr = 200 V, IF = 60 A
1100
1000
1500
900
TJ = 125 °C
800
1200 TJ = 125 °C
700
Qrr (nC)
Qrr (nC)
600
900 500
TJ = 25 °C 400
300
600
200
TJ = 25 °C
100
300 0
100 200 300 400 500 100 200 300 400 500
Fig. 19 - Typical Qrr Antiparallel Diode vs. dIF/dt Fig. 22 - Typical Qrr Chopper Diode vs. dIF/dt
Vrr = 200 V, IF = 60 A Vrr = 200 V, IF = 40 A

VS-100MT060WDF
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ZthJC - Thermal Impedance

Junction to Case (°C/W)
0.1
D = 0.50
D = 0.20
D = 0.10
0.01
D = 0.05
D = 0.02
D = 0.01
DC
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10
93412_23 t1 - Rectangular Pulse Duration (s)

Fig. 23 - Maximum Thermal Impedance ZthJC Characteristics (IGBT)
10
ZthJC - Thermal Impedance
Junction to Case (°C/W)
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
0.1 D = 0.01
DC
0.01
0.0001 0.001 0.01 0.1 1 10
93412_24 t1 - Rectangular Pulse Duration (s)

Fig. 24 - Maximum Thermal Impedance ZthJC Characteristics (PFC Diode)
L
+ VCC 80 V
+
D.U.T. - D.U.T.
0 -
1000 V
1K Rg
Fig. 25 - Gate Charge Circuit (Turn-Off) Fig. 26 - RBSOA Circuit

VS-100MT060WDF
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Diode clamp/
D.U.T.
Driver L
+
-
D + -5V +
C - 900 V
D.U.T./ -
VCC
Driver
D.U.T. Rg
Fig. 27 - S.C. SOA Circuit Fig. 28 - Switching Loss Circuit
VCC
R=
ICM
+
D.U.T. -
VCC
Rg
Fig. 29 - Resistive Load Circuit
CIRCUIT CONFIGURATION
E1
F1
Q1
D1 D3
A7
E6
A1 M2
E7
B1 M3
Th
Q4
G6
D2 D4
G7
M7
I1
L1

VS-100MT060WDF
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ORDERING INFORMATION TABLE
Device code VS- 100 MT 060 W DF
1 2 3 4 5 6
1 - Vishay Semiconductors product

2 - Current rating (100 = 100 A)
3 - Essential part number (MT = MTP package)
4 - Voltage code x 10 = voltage rating (example: 060 = 600 V)
5 - Die IGBT technology (W = warp speed IGBT)
6 - Circuit configuration (DF = dual forward)
LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95383

Outline Dimensions
www.vishay.com
MTP - Full Pin
DIMENSIONS in millimeters
3.0
12 ± 0.3 39.5 ± 0.3 12.1 ± 0.3 2.1
1.5
Ø 1.1 ± 0.025 z detail
6
2.5 ± 0.1
17 ± 0.3
3
Use Self Tapping Screw
or M2.5 x X.
45 ± 0.1
e.g. M2.5 x 6 or M2.5 x 8
63.5 ± 0.15 according to PCB

thickness used
0.8 Ra
1.3 48.7 ± 0.3 7.4 21.1 ± 0.5

4.1
A B C D E F G H I L M
1
2
45°
31.8 ± 0.15
19.8 ± 0.1
33.2 ± 0.3
27.5 ± 0.3
3
Ø 5 (x 4)
15.2
22.8
7.6
4
5
6
5.2
X
7
Ø 2.1 (x 4) 6
R 2.6 (x 2)
12
18
24
30
PINS POSITION
WITH TOLERANCE Ø 0.6
Revision: 14-Sep-16 1 Document Number: 95383

Legal Disclaimer Notice
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Vishay
Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.
Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.
Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of
typical requirements that are often placed on Vishay products in generic applications. Such statements are not binding
statements about the suitability of products for a particular application. It is the customer’s responsibility to validate that a
particular product with the properties described in the product specification is suitable for use in a particular application.
Parameters provided in datasheets and / or specifications may vary in different applications and performance may vary over
time. All operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.
Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk.
Please contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for
such applications.
No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document
or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.
© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED
Revision: 08-Feb-17 1 Document Number: 91000

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VS-100MT060WDF

ABSOLUTE MAXIMUM RATINGS

Revision: 09-Oct-17 1 Document Number: 93412

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise noted)

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

Revision: 09-Oct-17 2 Document Number: 93412

THERMISTOR ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

THERMAL AND MECHANICAL SPECIFICATIONS

93412_02 VCE (V) 93412_04 VCE (V)

Revision: 09-Oct-17 3 Document Number: 93412

IF - Instantaneous Forward Current (A)

93412_05 VGE (V) 93412_08 VF - Anode to Cathode

Allowable Case Temperature (°C) 140

93412_06 VCES (V) 93412_09 IF - Continuous Forward Current (A)

93412_07 IC (mA) 93412_10 VF - Forward Voltage Drop (V)

Revision: 09-Oct-17 4 Document Number: 93412

93412_12 VR (V) 93412_15 IC (A)

93412_13 IC (A) 93412_16 Rg (Ω)

Revision: 09-Oct-17 5 Document Number: 93412

200 130 TJ = 125 °C

93412_17 dIF/dt (A/μs) 93412_20 dIF/dt (A/μs)

93412_18 dIF/dt (A/μs) 93412_21 dIF/dt (A/μs)

Revision: 09-Oct-17 6 Document Number: 93412

ZthJC - Thermal Impedance

93412_23 t1 - Rectangular Pulse Duration (s)

93412_24 t1 - Rectangular Pulse Duration (s)

Fig. 25 - Gate Charge Circuit (Turn-Off) Fig. 26 - RBSOA Circuit

Revision: 09-Oct-17 7 Document Number: 93412

Fig. 27 - S.C. SOA Circuit Fig. 28 - Switching Loss Circuit

Fig. 29 - Resistive Load Circuit

Revision: 09-Oct-17 8 Document Number: 93412

Device code VS- 100 MT 060 W DF

1 - Vishay Semiconductors product

LINKS TO RELATED DOCUMENTS

Revision: 09-Oct-17 9 Document Number: 93412

63.5 ± 0.15 according to PCB

1.3 48.7 ± 0.3 7.4 21.1 ± 0.5

Revision: 14-Sep-16 1 Document Number: 95383

© 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED

Revision: 08-Feb-17 1 Document Number: 91000

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