APPENDIX B: MODEL AND DEVICE PARAMETERS

B. APPENDIX B: MODEL AND DEVICE PARAMETERS B.1. URC: Uniform R.C. line

The following tables summarize the parameters available on each of the devices and models in (note URC — instance parameters (input-output)

that for some systems with limited memory, output parameters are not available). There are several tables l Length of transmission line

n Number of lumps

for each type of device supported by . Input parameters to instances and models are parameters that can
occur on an instance or model definition line in the form ‘‘keyword=value’’ where ‘‘keyword’’ is the

URC — instance parameters (output-only)

parameter name as given in the tables. Default input parameters (such as the resistance of a resistor or the
pos_node Positive node of URC

capacitance of a capacitor) obviously do not need the keyword specified. neg_node Negative node of URC

Output parameters are those additional parameters which are available for many types of instances gnd Ground node of URC

for the output of operating point and debugging information. These parameters are specified as

URC — model parameters (input-only)
‘‘@device[keyword]’’ and are available for the most recent point computed or, if specified in a ‘‘.save’’

urc Uniform R.C. line model

statement, for an entire simulation as a normal output vector. Thus, to monitor the gate-to-source capaci-
tance of a MOSFET, a command

URC — model parameters (input-output)

save @m1[cgs] k Propagation constant

fmax Maximum frequency of interest

given before a transient simulation causes the specified capacitance value to be saved at each timepoint,

rperl Resistance per unit length
and a subsequent command such as

cperl Capacitance per unit length

plot @m1[cgs] isperl Saturation current per length

rsperl Diode resistance per length

produces the desired plot. (Note that the show command does not use this format).

Some variables are listed as both input and output, and their output simply returns the previously
B.2. ASRC: Arbitrary Source
input value, or the default value after the simulation has been run. Some parameter are input only because

the output system can not handle variables of the given type yet, or the need for them as output variables ASRC — instance parameters (input-only)

has not been apparent. Many such input variables are available as output variables in a different format, i Current source

v Voltage source

such as the initial condition vectors that can be retrieved as individual initial condition values. Finally,
internally derived values are output only and are provided for debugging and operating point output pur-

ASRC — instance parameters (output-only)
poses.

i Current through source

Please note that these tables do not provide the detailed information available about the parameters v Voltage across source

provided in the section on each device and model, but are provided as a quick reference guide. pos_node Positive Node

neg_node Negative Node

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

B.3. BJT: Bipolar Junction Transistor

BJT — instance output-only parameters — continued

cexbc Total Capacitance in B-X junction

BJT — instance parameters (input-only)

qbe Charge storage B-E junction

ic Initial condition vector

qbc Charge storage B-C junction

qcs Charge storage C-S junction

BJT — instance parameters (input-output)

qbx Charge storage B-X junction

off Device initially off

p Power dissipation

icvbe Initial B-E voltage

icvce Initial C-E voltage

BJT — model parameters (input-output)

area Area factor

npn NPN type device

temp instance temperature

pnp PNP type device

is Saturation Current

BJT — instance parameters (output-only)

bf Ideal forward beta

colnode Number of collector node

nf Forward emission coefficient

basenode Number of base node

vaf Forward Early voltage

emitnode Number of emitter node

va (null)

substnode Number of substrate node

ikf Forward beta roll-off corner current

colprimenode Internal collector node

ik (null)

baseprimenode Internal base node

ise B-E leakage saturation current

emitprimenode Internal emitter node

ne B-E leakage emission coefficient

ic Current at collector node

br Ideal reverse beta

ib Current at base node

nr Reverse emission coefficient

ie Emitter current

var Reverse Early voltage

is Substrate current

vb (null)

vbe B-E voltage

ikr reverse beta roll-off corner current

vbc B-C voltage

isc B-C leakage saturation current

gm Small signal transconductance

nc B-C leakage emission coefficient

gpi Small signal input conductance - pi

rb Zero bias base resistance

gmu Small signal conductance - mu

irb Current for base resistance=(rb+rbm)/2

gx Conductance from base to internal base

rbm Minimum base resistance

go Small signal output conductance

re Emitter resistance

geqcb d(Ibe)/d(Vbc)

rc Collector resistance

gccs Internal C-S cap. equiv. cond.

cje Zero bias B-E depletion capacitance

geqbx Internal C-B-base cap. equiv. cond.

vje B-E built in potential

cpi Internal base to emitter capactance

pe (null)

cmu Internal base to collector capactiance

mje B-E junction grading coefficient

cbx Base to collector capacitance

me (null)

ccs Collector to substrate capacitance

tf Ideal forward transit time

cqbe Cap. due to charge storage in B-E jct.

xtf Coefficient for bias dependence of TF

cqbc Cap. due to charge storage in B-C jct.

vtf Voltage giving VBC dependence of TF

cqcs Cap. due to charge storage in C-S jct.

itf High current dependence of TF

cqbx Cap. due to charge storage in B-X jct.

continued ptf Excess phase

cjc Zero bias B-C depletion capacitance

vjc B-C built in potential

continued

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

B.4. BSIM1: Berkeley Short Channel IGFET Model

BJT — model input-output parameters — continued

pc (null)

BSIM1 — instance parameters (input-only)

mjc B-C junction grading coefficient

ic Vector of DS,GS,BS initial voltages

mc (null)

xcjc Fraction of B-C cap to internal base

BSIM1 — instance parameters (input-output)

tr Ideal reverse transit time

l Length

cjs Zero bias C-S capacitance w Width

ccs Zero bias C-S capacitance

ad Drain area

vjs Substrate junction built in potential

as Source area

ps (null) pd Drain perimeter

mjs Substrate junction grading coefficient

ps Source perimeter

ms (null)

nrd Number of squares in drain

xtb Forward and reverse beta temp. exp.

nrs Number of squares in source

eg Energy gap for IS temp. dependency

off Device is initially off

xti Temp. exponent for IS

vds Initial D-S voltage

fc Forward bias junction fit parameter

vgs Initial G-S voltage

tnom Parameter measurement temperature vbs Initial B-S voltage

kf Flicker Noise Coefficient

af Flicker Noise Exponent

BSIM1 — model parameters (input-only)

nmos Flag to indicate NMOS

BJT — model parameters (output-only)
pmos Flag to indicate PMOS

type NPN or PNP

invearlyvoltf Inverse early voltage:forward

BSIM1 — model parameters (input-output)

invearlyvoltr Inverse early voltage:reverse

vfb Flat band voltage

invrollofff Inverse roll off - forward

lvfb Length dependence of vfb

invrolloffr Inverse roll off - reverse

wvfb Width dependence of vfb

collectorconduct Collector conductance

phi Strong inversion surface potential

emitterconduct Emitter conductance

lphi Length dependence of phi

transtimevbcfact Transit time VBC factor

excessphasefactor Excess phase fact. wphi Width dependence of phi

k1 Bulk effect coefficient 1

lk1 Length dependence of k1

wk1 Width dependence of k1

k2 Bulk effect coefficient 2

lk2 Length dependence of k2

wk2 Width dependence of k2

eta VDS dependence of threshold voltage

leta Length dependence of eta

weta Width dependence of eta

x2e VBS dependence of eta

lx2e Length dependence of x2e

continued

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

BSIM1 — model input-output parameters — continued BSIM1 — model input-output parameters — continued

wx2e Width dependence of x2e tox Gate oxide thickness in um

x3e VDS dependence of eta temp Temperature in degree Celcius

lx3e Length dependence of x3e vdd Supply voltage to specify mus

wx3e Width dependence of x3e cgso Gate source overlap capacitance per unit channel width(m)

dl Channel length reduction in um cgdo Gate drain overlap capacitance per unit channel width(m)

dw Channel width reduction in um cgbo Gate bulk overlap capacitance per unit channel length(m)

muz Zero field mobility at VDS=0 VGS=VTH xpart Flag for channel charge partitioning

x2mz VBS dependence of muz rsh Source drain diffusion sheet resistance in ohm per square

lx2mz Length dependence of x2mz js Source drain junction saturation current per unit area

wx2mz Width dependence of x2mz pb Source drain junction built in potential

mus Mobility at VDS=VDD VGS=VTH, channel length modulation mj Source drain bottom junction capacitance grading coefficient

lmus Length dependence of mus pbsw Source drain side junction capacitance built in potential

wmus Width dependence of mus mjsw Source drain side junction capacitance grading coefficient

x2ms VBS dependence of mus cj Source drain bottom junction capacitance per unit area

lx2ms Length dependence of x2ms cjsw Source drain side junction capacitance per unit area

wx2ms Width dependence of x2ms wdf Default width of source drain diffusion in um

x3ms VDS dependence of mus dell Length reduction of source drain diffusion

lx3ms Length dependence of x3ms

wx3ms Width dependence of x3ms B.5. BSIM2: Berkeley Short Channel IGFET Model

u0 VGS dependence of mobility

lu0 Length dependence of u0 BSIM2 — instance parameters (input-only)

ic Vector of DS,GS,BS initial voltages

wu0 Width dependence of u0

x2u0 VBS dependence of u0

lx2u0 Length dependence of x2u0 BSIM2 — instance parameters (input-output)

wx2u0 Width dependence of x2u0 l Length

u1 VDS depence of mobility, velocity saturation w Width

lu1 Length dependence of u1 ad Drain area

wu1 Width dependence of u1 as Source area

x2u1 VBS depence of u1 pd Drain perimeter

lx2u1 Length depence of x2u1 ps Source perimeter

wx2u1 Width depence of x2u1 nrd Number of squares in drain

x3u1 VDS depence of u1 nrs Number of squares in source

lx3u1 Length dependence of x3u1 off Device is initially off

wx3u1 Width depence of x3u1 vds Initial D-S voltage

n0 Subthreshold slope vgs Initial G-S voltage

ln0 Length dependence of n0 vbs Initial B-S voltage

wn0 Width dependence of n0

nb VBS dependence of subthreshold slope

lnb Length dependence of nb

wnb Width dependence of nb

nd VDS dependence of subthreshold slope

lnd Length dependence of nd

wnd Width dependence of nd

continued

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

BSIM2 — model parameters (input-only) BSIM2 — model input-output parameters — continued

nmos Flag to indicate NMOS lmu2g Length dependence of mu2g

pmos Flag to indicate PMOS wmu2g Width dependence of mu2g

mu30 VDS dependence of mu in linear term

BSIM2 — model parameters (input-output) lmu30 Length dependence of mu30

vfb Flat band voltage wmu30 Width dependence of mu30

lvfb Length dependence of vfb mu3b VBS dependence of mu3

wvfb Width dependence of vfb lmu3b Length dependence of mu3b

phi Strong inversion surface potential wmu3b Width dependence of mu3b

lphi Length dependence of phi mu3g VGS dependence of mu3

wphi Width dependence of phi lmu3g Length dependence of mu3g

k1 Bulk effect coefficient 1 wmu3g Width dependence of mu3g

lk1 Length dependence of k1 mu40 VDS dependence of mu in linear term

wk1 Width dependence of k1 lmu40 Length dependence of mu40

k2 Bulk effect coefficient 2 wmu40 Width dependence of mu40

lk2 Length dependence of k2 mu4b VBS dependence of mu4

wk2 Width dependence of k2 lmu4b Length dependence of mu4b

eta0 VDS dependence of threshold voltage at VDD=0 wmu4b Width dependence of mu4b

leta0 Length dependence of eta0 mu4g VGS dependence of mu4

weta0 Width dependence of eta0 lmu4g Length dependence of mu4g

etab VBS dependence of eta wmu4g Width dependence of mu4g

letab Length dependence of etab ua0 Linear VGS dependence of mobility

wetab Width dependence of etab lua0 Length dependence of ua0

dl Channel length reduction in um wua0 Width dependence of ua0

dw Channel width reduction in um uab VBS dependence of ua

mu0 Low-field mobility, at VDS=0 VGS=VTH luab Length dependence of uab

mu0b VBS dependence of low-field mobility wuab Width dependence of uab

lmu0b Length dependence of mu0b ub0 Quadratic VGS dependence of mobility

wmu0b Width dependence of mu0b lub0 Length dependence of ub0

mus0 Mobility at VDS=VDD VGS=VTH wub0 Width dependence of ub0

lmus0 Length dependence of mus0 ubb VBS dependence of ub

wmus0 Width dependence of mus lubb Length dependence of ubb

musb VBS dependence of mus wubb Width dependence of ubb

lmusb Length dependence of musb u10 VDS depence of mobility

wmusb Width dependence of musb lu10 Length dependence of u10

mu20 VDS dependence of mu in tanh term wu10 Width dependence of u10

lmu20 Length dependence of mu20 u1b VBS depence of u1

wmu20 Width dependence of mu20 lu1b Length depence of u1b

mu2b VBS dependence of mu2 wu1b Width depence of u1b

lmu2b Length dependence of mu2b u1d VDS depence of u1

wmu2b Width dependence of mu2b lu1d Length depence of u1d

mu2g VGS dependence of mu2 wu1d Width depence of u1d

continued n0 Subthreshold slope at VDS=0 VBS=0

ln0 Length dependence of n0

continued

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

BSIM2 — model input-output parameters — continued BSIM2 — model input-output parameters — continued

wn0 Width dependence of n0 rsh Source drain diffusion sheet resistance in ohm per square

nb VBS dependence of n js Source drain junction saturation current per unit area

lnb Length dependence of nb pb Source drain junction built in potential

wnb Width dependence of nb mj Source drain bottom junction capacitance grading coefficient

nd VDS dependence of n pbsw Source drain side junction capacitance built in potential

lnd Length dependence of nd mjsw Source drain side junction capacitance grading coefficient

wnd Width dependence of nd cj Source drain bottom junction capacitance per unit area

vof0 Threshold voltage offset AT VDS=0 VBS=0 cjsw Source drain side junction capacitance per unit area

wdf Default width of source drain diffusion in um

lvof0 Length dependence of vof0

wvof0 Width dependence of vof0 dell Length reduction of source drain diffusion

vofb VBS dependence of vof

lvofb Length dependence of vofb

B.6. Capacitor: Fixed capacitor

wvofb Width dependence of vofb

vofd VDS dependence of vof Capacitor — instance parameters (input-output)

lvofd Length dependence of vofd capacitance Device capacitance

ic Initial capacitor voltage

wvofd Width dependence of vofd

ai0 Pre-factor of hot-electron effect. w Device width

l Device length

lai0 Length dependence of ai0

wai0 Width dependence of ai0

aib VBS dependence of ai Capacitor — instance parameters (output-only)

laib Length dependence of aib i Device current

p Instantaneous device power

waib Width dependence of aib

bi0 Exponential factor of hot-electron effect.

lbi0 Length dependence of bi0 Capacitor — model parameters (input-only)

c Capacitor model

wbi0 Width dependence of bi0

bib VBS dependence of bi

lbib Length dependence of bib Capacitor — model parameters (input-output)

wbib Width dependence of bib cj Bottom Capacitance per area

cjsw Sidewall capacitance per meter

vghigh Upper bound of the cubic spline function.

lvghigh Length dependence of vghigh defw Default width

wvghigh Width dependence of vghigh narrow width correction factor

vglow Lower bound of the cubic spline function.

lvglow Length dependence of vglow

wvglow Width dependence of vglow

tox Gate oxide thickness in um

temp Temperature in degree Celcius

vdd Maximum Vds

vgg Maximum Vgs

vbb Maximum Vbs

cgso Gate source overlap capacitance per unit channel width(m)

cgdo Gate drain overlap capacitance per unit channel width(m)

cgbo Gate bulk overlap capacitance per unit channel length(m)

xpart Flag for channel charge partitioning

continued

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

B.7. CCCS: Current controlled current source

CSwitch — instance parameters (input-output)

control Name of controlling source

CCCS — instance parameters (input-output)

gain Gain of source

control Name of controlling source CSwitch — instance parameters (output-only)

pos_node Positive node of switch

neg_node Negative node of switch

CCCS — instance parameters (output-only)

neg_node Negative node of source i Switch current

p Instantaneous power

pos_node Positive node of source

i CCCS output current

v CCCS voltage at output CSwitch — model parameters (input-output)

p CCCS power csw Current controlled switch model

it Threshold current

ih Hysterisis current
B.8. CCVS: Linear current controlled current source

ron Closed resistance

roff Open resistance

CCVS — instance parameters (input-output)

gain Transresistance (gain)

control Controlling voltage source CSwitch — model parameters (output-only)

gon Closed conductance

goff Open conductance

CCVS — instance parameters (output-only)

pos_node Positive node of source

neg_node Negative node of source

B.10. Diode: Junction Diode model

i CCVS output current

v CCVS output voltage Diode — instance parameters (input-output)

p CCVS power off Initially off

temp Instance temperature

ic Initial device voltage
B.9. CSwitch: Current controlled ideal switch

area Area factor

CSwitch — instance parameters (input-only)

on Initially closed Diode — instance parameters (output-only)

off Initially open vd Diode voltage

id Diode current

c Diode current

gd Diode conductance

cd Diode capacitance

charge Diode capacitor charge

capcur Diode capacitor current

p Diode power

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

B.12. mutual: Mutual inductors

Diode — model parameters (input-only)

d Diode model

mutual — instance parameters (input-output)

k Mutual inductance

Diode — model parameters (input-output) coefficient (null)

is Saturation current inductor1 First coupled inductor

tnom Parameter measurement temperature inductor2 Second coupled inductor

rs Ohmic resistance

n Emission Coefficient

B.13. Isource: Independent current source
tt Transit Time

cjo Junction capacitance Isource — instance parameters (input-only)

cj0 (null) pulse Pulse description

vj Junction potential sine Sinusoidal source description

m Grading coefficient sin Sinusoidal source description

eg Activation energy exp Exponential source description

xti Saturation current temperature exp. pwl Piecewise linear description

kf flicker noise coefficient

sffm single freq. FM description

af flicker noise exponent ac AC magnitude,phase vector

fc Forward bias junction fit parameter c Current through current source

bv Reverse breakdown voltage distof1 f1 input for distortion

ibv Current at reverse breakdown voltage distof2 f2 input for distortion

Diode — model parameters (output-only) Isource — instance parameters (input-output)

cond Ohmic conductance dc DC value of source

acmag AC magnitude

acphase AC phase

B.11. Inductor: Inductors

Inductor — instance parameters (input-output) Isource — instance parameters (output-only)

inductance Inductance of inductor neg_node Negative node of source

ic Initial current through inductor pos_node Positive node of source

acreal AC real part

acimag AC imaginary part

Inductor — instance parameters (output-only)

function Function of the source

flux Flux through inductor

v Terminal voltage of inductor order Order of the source function

coeffs Coefficients of the source

volt

i Current through the inductor v Voltage across the supply

p Power supplied by the source

current

p instantaneous power dissipated by the inductor

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

B.14. JFET: Junction Field effect transistor

JFET — model input-output parameters — continued

cgd G-D junction cap

JFET — instance parameters (input-output)

pb Gate junction potential

off Device initially off

ic Initial VDS,VGS vector is Gate junction saturation current

fc Forward bias junction fit parm.

area Area factor

b Doping tail parameter

ic-vds Initial D-S voltage

ic-vgs Initial G-S volrage tnom parameter measurement temperature

temp Instance temperature kf Flicker Noise Coefficient

af Flicker Noise Exponent

JFET — instance parameters (output-only)

drain-node Number of drain node JFET — model parameters (output-only)

gate-node Number of gate node type N-type or P-type JFET model

gd Drain conductance

source-node Number of source node

drain-prime-node Internal drain node gs Source conductance

source-prime-node Internal source node

vgs Voltage G-S B.15. LTRA: Lossy transmission line

vgd Voltage G-D

ig Current at gate node LTRA — instance parameters (input-only)

ic Initial condition vector:v1,i1,v2,i2

id Current at drain node

is Source current

igd Current G-D LTRA — instance parameters (input-output)

gm Transconductance v1 Initial voltage at end 1

v2 Initial voltage at end 2

gds Conductance D-S

ggs Conductance G-S i1 Initial current at end 1

ggd Conductance G-D i2 Initial current at end 2

qgs Charge storage G-S junction

qgd Charge storage G-D junction LTRA — instance parameters (output-only)

cqgs Capacitance due to charge storage G-S junction pos_node1 Positive node of end 1 of t-line

neg_node1 Negative node of end 1 of t.line

cqgd Capacitance due to charge storage G-D junction

p Power dissipated by the JFET pos_node2 Positive node of end 2 of t-line

neg_node2 Negative node of end 2 of t-line

JFET — model parameters (input-output)

njf N type JFET model LTRA — model parameters (input-output)

pjf P type JFET model ltra LTRA model

r Resistance per metre

vt0 Threshold voltage

vto (null) l Inductance per metre

beta Transconductance parameter g (null)

c Capacitance per metre

lambda Channel length modulation param.

rd Drain ohmic resistance len length of line

rs Source ohmic resistance nocontrol No timestep control

cgs G-S junction capactance steplimit always limit timestep to 0.8*(delay of line)

continued

continued

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

LTRA — model input-output parameters — continued MES — instance output-only parameters — continued

nosteplimit don’t always limit timestep to 0.8*(delay of line) p Power dissipated by the mesfet

lininterp use linear interpolation

quadinterp use quadratic interpolation MES — model parameters (input-only)

mixedinterp use linear interpolation if quadratic results look unacceptable nmf N type MESfet model

truncnr use N-R iterations for step calculation in LTRAtrunc pmf P type MESfet model

truncdontcut don’t limit timestep to keep impulse response calculation errors low

compactrel special reltol for straight line checking

MES — model parameters (input-output)

compactabs special abstol for straight line checking

vt0 Pinch-off voltage

vto (null)

LTRA — model parameters (output-only)

alpha Saturation voltage parameter

rel Rel. rate of change of deriv. for bkpt beta Transconductance parameter

abs Abs. rate of change of deriv. for bkpt

lambda Channel length modulation parm.

b Doping tail extending parameter

B.16. MES: GaAs MESFET model rd Drain ohmic resistance

rs Source ohmic resistance

MES — instance parameters (input-output)

cgs G-S junction capacitance

area Area factor cgd G-D junction capacitance

icvds Initial D-S voltage

pb Gate junction potential

icvgs Initial G-S voltage is Junction saturation current

fc Forward bias junction fit parm.

MES — instance parameters (output-only) kf Flicker noise coefficient

off Device initially off af Flicker noise exponent

dnode Number of drain node

gnode Number of gate node

MES — model parameters (output-only)

snode Number of source node type N-type or P-type MESfet model

dprimenode Number of internal drain node

gd Drain conductance

sprimenode Number of internal source node

gs Source conductance

vgs Gate-Source voltage depl_cap Depletion capacitance

vgd Gate-Drain voltage vcrit Critical voltage

cg Gate capacitance

cd Drain capacitance

cgd Gate-Drain capacitance

gm Transconductance

gds Drain-Source conductance

ggs Gate-Source conductance

ggd Gate-Drain conductance

cqgs Capacitance due to gate-source charge storage

cqgd Capacitance due to gate-drain charge storage

qgs Gate-Source charge storage

qgd Gate-Drain charge storage

is Source current

continued

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

B.17. Mos1: Level 1 MOSfet model with Meyer capacitance model

Mos1 — instance output-only parameters — continued

sourceconductance Conductance of source

Mos1 — instance parameters (input-only)

rd Drain conductance

off Device initially off

ic Vector of D-S, G-S, B-S voltages drainconductance Conductance of drain

gm Transconductance

gds Drain-Source conductance

Mos1 — instance parameters (input-output)

l Length gmb Bulk-Source transconductance

w Width gmbs

gbd Bulk-Drain conductance

ad Drain area

as Source area gbs Bulk-Source conductance

pd Drain perimeter cbd Bulk-Drain capacitance

cbs Bulk-Source capacitance

ps Source perimeter
cgs Gate-Source capacitance

nrd Drain squares

nrs Source squares cgd Gate-Drain capacitance

cgb Gate-Bulk capacitance

icvds Initial D-S voltage
cqgs Capacitance due to gate-source charge storage

icvgs Initial G-S voltage

icvbs Initial B-S voltage cqgd Capacitance due to gate-drain charge storage

temp Instance temperature cqgb Capacitance due to gate-bulk charge storage

cqbd Capacitance due to bulk-drain charge storage

cqbs Capacitance due to bulk-source charge storage

Mos1 — instance parameters (output-only)

cbd0 Zero-Bias B-D junction capacitance
id Drain current

cbdsw0

is Source current

cbs0 Zero-Bias B-S junction capacitance

ig Gate current

ib Bulk current cbssw0

qgs Gate-Source charge storage

ibd B-D junction current

qgd Gate-Drain charge storage

ibs B-S junction current

vgs Gate-Source voltage qgb Gate-Bulk charge storage

vds Drain-Source voltage qbd Bulk-Drain charge storage

qbs Bulk-Source charge storage

vbs Bulk-Source voltage

p Instaneous power

vbd Bulk-Drain voltage

dnode Number of the drain node

gnode Number of the gate node Mos1 — model parameters (input-only)

nmos N type MOSfet model

snode Number of the source node

pmos P type MOSfet model

bnode Number of the node

dnodeprime Number of int. drain node

Mos1 — model parameters (input-output)

snodeprime Number of int. source node

vto Threshold voltage

von

vt0 (null)

vdsat Saturation drain voltage

kp Transconductance parameter

sourcevcrit Critical source voltage

gamma Bulk threshold parameter

drainvcrit Critical drain voltage

phi Surface potential

rs Source resistance

continued lambda Channel length modulation

rd Drain ohmic resistance

continued

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

B.18. Mos2: Level 2 MOSfet model with Meyer capacitance model

Mos1 — model input-output parameters — continued

rs Source ohmic resistance

Mos2 — instance parameters (input-only)

cbd B-D junction capacitance

off Device initially off

cbs B-S junction capacitance ic Vector of D-S, G-S, B-S voltages

is Bulk junction sat. current

pb Bulk junction potential

Mos2 — instance parameters (input-output)

cgso Gate-source overlap cap. l Length

cgdo Gate-drain overlap cap. w Width

cgbo Gate-bulk overlap cap.

ad Drain area

rsh Sheet resistance as Source area

cj Bottom junction cap per area pd Drain perimeter

mj Bottom grading coefficient

ps Source perimeter
cjsw Side junction cap per area

nrd Drain squares

mjsw Side grading coefficient nrs Source squares

js Bulk jct. sat. current density

icvds Initial D-S voltage
tox Oxide thickness

icvgs Initial G-S voltage

ld Lateral diffusion icvbs Initial B-S voltage

u0 Surface mobility temp Instance operating temperature

uo (null)

fc Forward bias jct. fit parm.

Mos2 — instance parameters (output-only)

nsub Substrate doping
id Drain current

tpg Gate type

cd

nss Surface state density

ibd B-D junction current

tnom Parameter measurement temperature ibs B-S junction current

kf Flicker noise coefficient

is Source current

af Flicker noise exponent

ig Gate current

ib Bulk current

Mos1 — model parameters (output-only) vgs Gate-Source voltage

type N-channel or P-channel MOS

vds Drain-Source voltage

vbs Bulk-Source voltage

vbd Bulk-Drain voltage

dnode Number of drain node

gnode Number of gate node

snode Number of source node

bnode Number of bulk node

dnodeprime Number of internal drain node

snodeprime Number of internal source node

von

vdsat Saturation drain voltage

sourcevcrit Critical source voltage

drainvcrit Critical drain voltage

continued

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

Mos2 — instance output-only parameters — continued Mos2 — model parameters (input-output)

rs Source resistance vto Threshold voltage

sourceconductance Source conductance vt0 (null)

rd Drain resistance kp Transconductance parameter

drainconductance Drain conductance gamma Bulk threshold parameter

gm Transconductance phi Surface potential

gds Drain-Source conductance lambda Channel length modulation

gmb Bulk-Source transconductance rd Drain ohmic resistance

gmbs rs Source ohmic resistance

gbd Bulk-Drain conductance cbd B-D junction capacitance

gbs Bulk-Source conductance cbs B-S junction capacitance

cbd Bulk-Drain capacitance is Bulk junction sat. current

cbs Bulk-Source capacitance pb Bulk junction potential

cgs Gate-Source capacitance cgso Gate-source overlap cap.

cgd Gate-Drain capacitance cgdo Gate-drain overlap cap.

cgb Gate-Bulk capacitance cgbo Gate-bulk overlap cap.

cbd0 Zero-Bias B-D junction capacitance rsh Sheet resistance

cbdsw0 cj Bottom junction cap per area

cbs0 Zero-Bias B-S junction capacitance mj Bottom grading coefficient

cbssw0 cjsw Side junction cap per area

cqgs Capacitance due to gate-source charge storage mjsw Side grading coefficient

cqgd Capacitance due to gate-drain charge storage js Bulk jct. sat. current density

cqgb Capacitance due to gate-bulk charge storage tox Oxide thickness

cqbd Capacitance due to bulk-drain charge storage ld Lateral diffusion

cqbs Capacitance due to bulk-source charge storage u0 Surface mobility

qgs Gate-Source charge storage uo (null)

qgd Gate-Drain charge storage fc Forward bias jct. fit parm.

qgb Gate-Bulk charge storage nsub Substrate doping

qbd Bulk-Drain charge storage tpg Gate type

qbs Bulk-Source charge storage nss Surface state density

p Instantaneous power delta Width effect on threshold

uexp Crit. field exp for mob. deg.

Mos2 — model parameters (input-only)

ucrit Crit. field for mob. degradation

nmos N type MOSfet model vmax Maximum carrier drift velocity

pmos P type MOSfet model

xj Junction depth

neff Total channel charge coeff.

nfs Fast surface state density

tnom Parameter measurement temperature

kf Flicker noise coefficient

af Flicker noise exponent

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

Mos2 — model parameters (output-only) Mos3 — instance output-only parameters — continued

type N-channel or P-channel MOS von Turn-on voltage

vdsat Saturation drain voltage

sourcevcrit Critical source voltage
B.19. Mos3: Level 3 MOSfet model with Meyer capacitance model

drainvcrit Critical drain voltage

Mos3 — instance parameters (input-only) rs Source resistance

off Device initially off sourceconductance Source conductance

rd Drain resistance

drainconductance Drain conductance

Mos3 — instance parameters (input-output)

l Length gm Transconductance

w Width gds Drain-Source conductance

gmb Bulk-Source transconductance

ad Drain area

gmbs Bulk-Source transconductance

as Source area

pd Drain perimeter gbd Bulk-Drain conductance

gbs Bulk-Source conductance

ps Source perimeter

cbd Bulk-Drain capacitance

nrd Drain squares

nrs Source squares cbs Bulk-Source capacitance

cgs Gate-Source capacitance

icvds Initial D-S voltage

cgd Gate-Drain capacitance

icvgs Initial G-S voltage

icvbs Initial B-S voltage cgb Gate-Bulk capacitance

ic Vector of D-S, G-S, B-S voltages cqgs Capacitance due to gate-source charge storage

temp Instance operating temperature cqgd Capacitance due to gate-drain charge storage

cqgb Capacitance due to gate-bulk charge storage

Mos3 — instance parameters (output-only) cqbd Capacitance due to bulk-drain charge storage

id Drain current cqbs Capacitance due to bulk-source charge storage

cd Drain current cbd0 Zero-Bias B-D junction capacitance

ibd B-D junction current cbdsw0 Zero-Bias B-D sidewall capacitance

ibs B-S junction current cbs0 Zero-Bias B-S junction capacitance

cbssw0 Zero-Bias B-S sidewall capacitance

is Source current

ig Gate current qbs Bulk-Source charge storage

ib Bulk current qgs Gate-Source charge storage

vgs Gate-Source voltage qgd Gate-Drain charge storage

qgb Gate-Bulk charge storage

vds Drain-Source voltage

vbs Bulk-Source voltage qbd Bulk-Drain charge storage

vbd Bulk-Drain voltage p Instantaneous power

dnode Number of drain node

Mos3 — model parameters (input-only)

gnode Number of gate node

snode Number of source node nmos N type MOSfet model

pmos P type MOSfet model

bnode Number of bulk node

dnodeprime Number of internal drain node

snodeprime Number of internal source node

continued

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

Mos3 — model parameters (input-output) Mos3 — model parameters (output-only)

vto Threshold voltage type N-channel or P-channel MOS

vt0 (null)

kp Transconductance parameter
B.20. Mos6: Level 6 MOSfet model with Meyer capacitance model

gamma Bulk threshold parameter

phi Surface potential Mos6 — instance parameters (input-only)

rd Drain ohmic resistance off Device initially off

rs Source ohmic resistance ic Vector of D-S, G-S, B-S voltages

cbd B-D junction capacitance

cbs B-S junction capacitance Mos6 — instance parameters (input-output)

is Bulk junction sat. current l Length

pb Bulk junction potential w Width

cgso Gate-source overlap cap.

ad Drain area

cgdo Gate-drain overlap cap. as Source area

cgbo Gate-bulk overlap cap. pd Drain perimeter

rsh Sheet resistance

ps Source perimeter

cj Bottom junction cap per area nrd Drain squares

mj Bottom grading coefficient nrs Source squares

cjsw Side junction cap per area

icvds Initial D-S voltage

mjsw Side grading coefficient icvgs Initial G-S voltage

js Bulk jct. sat. current density icvbs Initial B-S voltage

tox Oxide thickness temp Instance temperature

ld Lateral diffusion

u0 Surface mobility Mos6 — instance parameters (output-only)

uo (null) id Drain current

fc Forward bias jct. fit parm. cd Drain current

nsub Substrate doping is Source current

tpg Gate type ig Gate current

nss Surface state density

ib Bulk current

vmax Maximum carrier drift velocity ibs B-S junction capacitance

xj Junction depth ibd B-D junction capacitance

nfs Fast surface state density vgs Gate-Source voltage

xd Depletion layer width

vds Drain-Source voltage

alpha Alpha vbs Bulk-Source voltage

eta Vds dependence of threshold voltage vbd Bulk-Drain voltage

delta Width effect on threshold dnode Number of the drain node

input_delta (null) gnode Number of the gate node

theta Vgs dependence on mobility snode Number of the source node

kappa Kappa

bnode Number of the node

tnom Parameter measurement temperature dnodeprime Number of int. drain node

kf Flicker noise coefficient snodeprime Number of int. source node

af Flicker noise exponent continued

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

Mos6 — instance output-only parameters — continued Mos6 — model parameters (input-output)

rs Source resistance vto Threshold voltage

sourceconductance Source conductance vt0 (null)

rd Drain resistance kv Saturation voltage factor

drainconductance Drain conductance nv Saturation voltage coeff.

von Turn-on voltage kc Saturation current factor

vdsat Saturation drain voltage nc Saturation current coeff.

sourcevcrit Critical source voltage nvth Threshold voltage coeff.

drainvcrit Critical drain voltage ps Sat. current modification par.

gmbs Bulk-Source transconductance gamma Bulk threshold parameter

gm Transconductance gamma1 Bulk threshold parameter 1

gds Drain-Source conductance sigma Static feedback effect par.

gbd Bulk-Drain conductance phi Surface potential

gbs Bulk-Source conductance lambda Channel length modulation param.

cgs Gate-Source capacitance lambda0 Channel length modulation param. 0

cgd Gate-Drain capacitance lambda1 Channel length modulation param. 1

cgb Gate-Bulk capacitance rd Drain ohmic resistance

cbd Bulk-Drain capacitance rs Source ohmic resistance

cbs Bulk-Source capacitance cbd B-D junction capacitance

cbd0 Zero-Bias B-D junction capacitance cbs B-S junction capacitance

cbdsw0 is Bulk junction sat. current

cbs0 Zero-Bias B-S junction capacitance pb Bulk junction potential

cbssw0 cgso Gate-source overlap cap.

cqgs Capacitance due to gate-source charge storage cgdo Gate-drain overlap cap.

cqgd Capacitance due to gate-drain charge storage cgbo Gate-bulk overlap cap.

cqgb Capacitance due to gate-bulk charge storage rsh Sheet resistance

cqbd Capacitance due to bulk-drain charge storage cj Bottom junction cap per area

cqbs Capacitance due to bulk-source charge storage mj Bottom grading coefficient

qgs Gate-Source charge storage cjsw Side junction cap per area

qgd Gate-Drain charge storage mjsw Side grading coefficient

qgb Gate-Bulk charge storage js Bulk jct. sat. current density

qbd Bulk-Drain charge storage ld Lateral diffusion

qbs Bulk-Source charge storage tox Oxide thickness

p Instaneous power u0 Surface mobility

uo (null)

Mos6 — model parameters (input-only)

fc Forward bias jct. fit parm.

nmos N type MOSfet model tpg Gate type

pmos P type MOSfet model

nsub Substrate doping

nss Surface state density

tnom Parameter measurement temperature

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

Mos6 — model parameters (output-only) Switch — instance parameters (input-output)

type N-channel or P-channel MOS pos_node Positive node of switch

neg_node Negative node of switch

B.21. Resistor: Simple linear resistor

Switch — instance parameters (output-only)

Resistor — instance parameters (input-output) cont_p_node Positive contr. node of switch

resistance Resistance cont_n_node Positive contr. node of switch

temp Instance operating temperature i Switch current

l Length p Switch power

w Width

Switch — model parameters (input-output)

Resistor — instance parameters (output-only) sw Switch model

i Current vt Threshold voltage

p Power vh Hysteresis voltage

ron Resistance when closed

Resistor — model parameters (input-only) roff Resistance when open

r Device is a resistor model

Switch — model parameters (output-only)

Resistor — model parameters (input-output) gon Conductance when closed

goff Conductance when open

rsh Sheet resistance

narrow Narrowing of resistor

tc1 First order temp. coefficient B.23. Tranline: Lossless transmission line

tc2 Second order temp. coefficient

defw Default device width Tranline — instance parameters (input-only)

tnom Parameter measurement temperature ic Initial condition vector:v1,i1,v2,i2

Tranline — instance parameters (input-output)
B.22. Switch: Ideal voltage controlled switch

z0 Characteristic impedance

Switch — instance parameters (input-only) zo (null)

on Switch initially closed f Frequency

off Switch initially open td Transmission delay

nl Normalized length at frequency given

v1 Initial voltage at end 1

v2 Initial voltage at end 2

i1 Initial current at end 1

i2 Initial current at end 2

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 APPENDIX B: MODEL AND DEVICE PARAMETERS APPENDIX B: MODEL AND DEVICE PARAMETERS

Tranline — instance parameters (output-only) VCVS — instance parameters (output-only)

rel Rel. rate of change of deriv. for bkpt pos_node Positive node of source

abs Abs. rate of change of deriv. for bkpt neg_node Negative node of source

pos_node1 Positive node of end 1 of t. line cont_p_node Positive node of contr. source

neg_node1 Negative node of end 1 of t. line cont_n_node Negative node of contr. source

pos_node2 Positive node of end 2 of t. line i Output current

neg_node2 Negative node of end 2 of t. line v Output voltage

delays Delayed values of excitation p Power

B.24. VCCS: Voltage controlled current source B.26. Vsource: Independent voltage source

VCCS — instance parameters (input-only) Vsource — instance parameters (input-only)

ic Initial condition of controlling source pulse Pulse description

sine Sinusoidal source description

VCCS — instance parameters (input-output) sin Sinusoidal source description

gain Transconductance of source (gain) exp Exponential source description

pwl Piecewise linear description

sffm Single freq. FM descripton

VCCS — instance parameters (output-only)

pos_node Positive node of source ac AC magnitude, phase vector

distof1 f1 input for distortion

neg_node Negative node of source

distof2 f2 input for distortion

cont_p_node Positive node of contr. source

cont_n_node Negative node of contr. source

Vsource — instance parameters (input-output)
i Output current

dc D.C. source value

v Voltage across output

acmag A.C. Magnitude

p Power

acphase A.C. Phase

B.25. VCVS: Voltage controlled voltage source

Vsource — instance parameters (output-only)

VCVS — instance parameters (input-only) pos_node Positive node of source

neg_node Negative node of source

ic Initial condition of controlling source

function Function of the source

order Order of the source function

VCVS — instance parameters (input-output)

coeffs Coefficients for the function

gain Voltage gain

acreal AC real part

acimag AC imaginary part

i Voltage source current

p Instantaneous power

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