AON7410

30V N-Channel MOSFET

General Description Features

The AON7410 uses advanced trench technology and design VDS (V) = 30V
to provide excellent RDS(ON) with low gate charge. This ID = 24A (VGS = 10V)
device is suitable for use in DC - DC converters and Load RDS(ON) < 20mΩ (VGS = 10V)
Switch applications. RDS(ON) < 26mΩ (VGS = 4.5V)

RoHS and Halogen-Free Compliant 100% UIS Tested

100% Rg Tested

DFN 3x3 EP
Top View Bottom View D
Top View

1 8

2 7

3 6

4 5
G
Pin 1 S

Orderable Part Number Package Type Form Minimum Order Quantity

AON7410 DFN 3x3 EP Tape & Reel 5000

Absolute Maximum Ratings TA=25°C unless otherwise noted

Parameter Symbol Maximum Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS ±20 V
Continuous Drain TC=25°C 24
Current B TC=100°C ID 15
Pulsed Drain Current C IDM 50 A
Continuous Drain TA=25°C 9.5
A
Current TA=70°C IDSM 7.7
Avalanche Current C IAS, IAR 17 A
Repetitive avalanche energy L=0.1mH C EAS, EAR 14 mJ
TC=25°C 20
B
PD
Power Dissipation TC=100°C 8.3
W
TA=25°C 3.1
PDSM
Power Dissipation A TA=70°C 2
Junction and Storage Temperature Range TJ, TSTG -55 to 150 °C

Thermal Characteristics
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient A t ≤ 10s 30 40 °C/W
RθJA
Maximum Junction-to-Ambient A Steady-State 60 75 °C/W
B
Maximum Junction-to-Case Steady-State RθJC 5 6 °C/W

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Electrical Characteristics (TJ=25°C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units

STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=250µA, VGS=0V 30 V
VDS=30V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current µA
TJ=55°C 5
IGSS Gate-Body leakage current VDS=0V, VGS= ±20V ±100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.4 1.8 2.5 V
ID(ON) On state drain current VGS=10V, VDS=5V 50 A
VGS=10V, ID=8A 16 20
RDS(ON) Static Drain-Source On-Resistance TJ=125°C 24 29 mΩ
VGS=4.5V, ID=7A 21 26
gFS Forward Transconductance VDS=5V, ID=8A 30 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.75 1 V
IS Maximum Body-Diode Continuous Current 20 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 440 550 660 pF
Coss Output Capacitance VGS=0V, VDS=15V, f=1MHz 77 110 143 pF
Crss Reverse Transfer Capacitance 33 55 77 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 3 4 4.9 Ω
SWITCHING PARAMETERS
Qg (10V) Total Gate Charge 7.8 9.8 12 nC
Qg (4.5V) Total Gate Charge 3.6 4.6 5.5 nC
VGS=10V, VDS=15V, ID=8A
Qgs Gate Source Charge 1.4 1.8 2.2 nC
Qgd Gate Drain Charge 1.3 2.2 3 nC
tD(on) Turn-On DelayTime 5 ns
tr Turn-On Rise Time VGS=10V, VDS=15V, RL=2Ω, 3.2 ns
tD(off) Turn-Off DelayTime RGEN=3Ω 24 ns
tf Turn-Off Fall Time 6 ns
trr Body Diode Reverse Recovery Time IF=8A, dI/dt=500A/µs 7 9 11 ns
Qrr Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs 12 15 18 nC
A: The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on RθJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given
application depends on the user's specific board design, and the maximum temperature of 150°C may be used if the PCB allows it.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. 150
E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C.
G. The maximum current rating is limited by bond-wires.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA
curve provides a single pulse rating.
Rev12: Jul-2011

COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Rev.12.0: August 2014 www.aosmd.com Page 2 of 6

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

50 50
10V VDS= 5V
4.5V
4V 40
40

30 30

ID(A)
ID (A)

3.5V
20 20

125°C
10 VGS= 3V 10
25°C

0 0
0 1 2 3 4 5 1 2 3 4 5

VDS (Volts) VGS(Volts)

Figure 1: On-Region Characteristics Figure 2: Transfer Characteristics

26 1.8

24 VGS= 10V
Normalized On-Resistance

VGS= 4.5V 1.6 ID= 8A

22
RDS(ON) (mΩ)

1.4 VGS= 4.5V

20 ID= 7A

1.2
18
VGS= 10V

16 1.0

14 0.8
0 5 10 15 IF=-6.5A,
20 25 30 µ
dI/dt=100A/µs 0 25 50 75 100 125 150 175
ID (A) Temperature (°C)
Figure 3: On-Resistance vs. Drain Current and Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage

50 1E+02
ID= 8A
45 1E+01

40 1E+00

35 1E-01
RDS(ON) (mΩ)

IS (A)

30 125°C 1E-02 125°C

25 1E-03
20 25°C 1E-04
25°C
15 1E-05
10 1E-06
2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2
VGS (Volts) VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics

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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
800
10
VDS= 15V
ID= 8A
8 600 Ciss

Capacitance (pF)
VGS (Volts)

6
400

4
200
Coss
2
Crss
0 0
0 2 4 6 8 10 0 5 10 15 20 25 30

Qg (nC) VDS (Volts)

Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100 300
TJ(Max)=150°C
10µs TC=25°C
10
100µs
200
Power (W)
ID (Amps)

1ms
1 DC
RDS(ON)
limited 100
0.1
TJ(Max)=150°C
TA=25°C
0.01 0
0.1 1 10 100 0.00001 0.0001 0.001 0.01 0.1 1 10
VDS (Volts) Pulse Width (s)
Figure 9: Maximum Forward Biased Safe Figure 10: Single Pulse Power Rating Junction-
Operating Area (Note H) to-Case (Note F)

10
D=Ton/T In descending order
TJ,PK=TC+PDM.ZθJC.RθJC D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZθJC Normalized Transient

RθJC=6°C/W
Thermal Resistance

0.1

PD
0.01
Single Pulse
Ton
T

0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance(Note F)

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 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS

25 30
Power Dissipation (W)

20

Current rating ID(A)

20
15

10
10

0 0
0 25 50 75 100 125 150 0 25 50 75 100 125 150

TCASE (°C) TCASE (°C)

Figure 12: Power De-rating (Note F) Figure 13: Current De-rating (Note F)

1000

TA=25°C

100
Power (W)

10

1
0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 14: Single Pulse Power Rating Junction-to-
Ambient (Note H)

10
D=Ton/T In descending order
ZθJA Normalized Transient

TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

D=Ton/T In descending order
RθJA=75°C/W
Thermal Resistance

1 TJ,PK=TA+PDM.ZθJA.RθJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse

RθJA=75°C/W 40
0.1

0.01 Single Pulse

Single Pulse
0.001
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 15: Normalized Maximum Transient Thermal Impedance(Note H)

Rev.12.0: August 2014 www.aosmd.com Page 5 of 6

 Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
VDC
+ Vds Qgs Qgd
- VDC

DUT -
Vgs

Ig

Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds

90%
DUT
+ Vdd
Vgs VDC

Rg - 10%

Vgs Vgs t d(on) tr t d(off) tf

t on t off

Unclamped Inductive Switching (UIS) Test Circuit & Waveforms

L 2
Vds EAR= 1/2 LIAR BVDSS

Id Vds

Vgs + Vdd I AR
Vgs VDC

Rg - Id

DUT
Vgs Vgs

Diode Recovery Test Circuit & Waveforms

Vds + Q rr = - Idt
DUT
Vgs

t rr
Vds - L Isd IF
Isd dI/dt
+ Vdd I RM
Vgs VDC
Vdd
Ig
- Vds

Rev.12.0: August 2014 www.aosmd.com Page 6 of 6