Documenti di Didattica
Documenti di Professioni
Documenti di Cultura
GENERAL DESCRIPTION
FEATURES
∗ 1A,650V, RDS(on)(typ)=4.1Ω@VGS=10V
∗ Low gate charge
∗ Low Crss
∗ Fast switching
∗ Improved dv/dt capability
NOMENCLATURE
ORDERING INFORMATION
THERMAL CHARACTERISTICS
TYPICAL CHARACTERISTICS
TYPICAL CHARACTERISTICS(continued)
400 8
300 6
Ciss
200 Coss 4
Notes:
Crss
1. VGS=0V
2. f=1MHz
100 2
Note: ID=2.0A
0 0
0.1 1 10 100 0 2 4 6 8
Drain-Source On-Resistance
2.5
(Normalized) – RDS(ON)(Ω)
Drain-Source Breakdown
1.1
2.0
1.0 1.5
1.0
0.9
Notes: Notes:
1. VGS=10V 0.5 1. VGS=10V
2. ID=250µA 2. ID=1.0A
0.8 0.0
-100 -50 0 50 100 150 200 -100 -50 0 50 100 150 200
Junction Temperature – TJ(°C) Junction Temperature – TJ(°C)
100µs
1ms
DC
10-2 0
100 101 102 103 25 50 75 100 125 150
Qgs Qgd
VGS
DUT
3mA
Charge
RL VDS
VDS
90%
VGS
VDD
RG
DUT
10%
VGS
10V
td(on) tr
ton td(off) tf
toff
1 2 BVDSS
EAS =
L 2 LIAS BVDSS - VDD
VDS
BVDSS
ID
IAS
RG
DUT VDD ID(t)
10V
VDD VDS(t)
tp
tp Time
PACKAGE OUTLINE
TO-220F-3L(One) UNIT: mm
TO-220F-3L(Two) UNIT: mm
ATTACHMENT
Revision History