Product Description

NGA-586
Sirenza Microdevices’ NGA-586 is a high performance InGaP/ DC-5.5 GHz, Cascadable
GaAs Heterojunction Bipolar Transistor MMIC Amplifier. A InGaP/GaAs HBT MMIC Amplifier
Darlington configuration designed with InGaP process
technology provides broadband performance up to 5.5 GHz with

OBSOLETE
excellent thermal perfomance. The heterojunction increases
breakdown voltage and minimizes leakage current between
junctions. Cancellation of emitter junction non-linearities results
in higher suppression of intermodulation products. At 850 Mhz See Application Note AN-059 for Alternates
and 80mA , the NGA-586 typically provides +39.6 dBm output
IP3, 19.8 dB of gain, and +18.9 dBm of 1dB compressed power Product Features
using a single positive voltage supply. Only 2 DC-blocking
capacitors, a bias resistor and an optional RF choke are required • High Gain : 18.6 dB at 1950 MHz
for operation. • Cascadable 50 Ohm
Gain & Return Loss vs. Freq. @T L=+25°C
• Patented InGaP Technology
24 0
• Operates From Single Supply
GAIN • Low Thermal Resistance Package
Return Loss (dB)

20 -10

IRL
Applications
Gain (dB)

16 -20
ORL • PA Driver Amplifier
12 -30 • Cellular, PCS, GSM, UMTS
• IF Amplifier
8 -40
0 1 2 3 4 5 6 • Wireless Data, Satellite
Frequency (GHz)

Sy mbol Parameter Units Frequency Min. Ty p. Max.

850 M Hz 17.8 19.8 21.8
G Small Signal Gain dB 1950 M Hz 18.6
2400 M Hz 17.9
850 M Hz 18.9
P1dB Output Pow er at 1dB Compression dBm
1950 M Hz 18.5
850 M Hz 39.6
OIP3 Output Third Order Intercept Point dBm
1950 M Hz 34.0
Bandw idth Determined by Return Loss (>10dB) M Hz 5500
IRL Input Return Loss dB 1950 M Hz 14.9

ORL Output Return Loss dB 1950 M Hz 19.5

NF Noise Figure dB 1950 M Hz 3.5

VD Device Operating Voltage V 4.5 4.9 5.4

ID Device Operating Current mA 72 80 88

RTH, j-l Thermal Resistance (junction to lead) °C/W 121

VS = 8v ID = 80mA Typ. IP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Test Conditions:
RBIAS = 39 Ohms TL = 25ºC ZS = ZL = 50 Ohms
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of
this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are
implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc..
All worldwide rights reserved.

522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com

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 OBSOLETE Preliminary
NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier

Typical RF Performance at Key Operating Frequencies

Frequency (MHz)
Sy mbol Parameter Unit 100 500 850 1950 2400 3500
G Small Signal Gain dB 20.5 20.1 19.8 18.6 17.9 15.5
OIP3 Output Third Order Intercept Point dBm 37.7 38.6 39.6 34.0 32.0 27.4
P1dB Output Pow er at 1dB Compression dBm 20.1 19.0 18.9 18.5 17.9 13.7
IRL Input Return Loss dB 29.3 21.3 17.7 14.9 15.4 15.8
ORL Output Return Loss dB 35.9 33.8 28.7 19.5 19.6 25
S21 Reverse Isolation dB 22.7 22.7 22.6 22.1 21.9 21.1
NF Noise Figure dB 3.7 3.5 3.4 3.5 3.5 3.6
VS = 8 V ID = 80 mA Typ. OIP3 Tone Spacing = 1 MHz, Pout per tone = 0 dBm
Test Conditions:
RBIAS = 39 Ohms TL = 25ºC ZS = ZL = 50 Ohms

Absolute Maximum Ratings

Noise Figure vs. Frequency
VD= 4.9 V, ID= 80 mA Parameter Absolute Limit
5.0 Max. Device Current (ID) 120 mA

4.5 Max. Device Voltage (VD) 6V

TL=+25ºC
Noise Figure (dB)

Max. RF Input Pow er +15 dBm

4.0
Max. Junction Temp. (TJ) +150°C
3.5
Operating Temp. Range (TL) -40°C to +85°C
3.0 Max. Storage Temp. +150°C

2.5 Operation of this device beyond any one of these limits may
cause permanent damage. For reliable continous operation,
2.0 the device voltage and current must not exceed the maximum
operating values specified in the table on page one.
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
Bias Conditions should also satisfy the follow ing expression:
Frequency (GHz)
IDVD < (TJ - TL) / RTH, j-l

OIP3 vs. Frequency P1dB vs. Frequency

VD= 4.9 V, ID= 80 mA VD= 4.9 v, ID= 80 mA
45 22
+25°C +25°C
40 TL -40°C 20 TL -40°C
+85°C +85°C
35 18
OIP3 (dBm)

P1dB (dBm)

30 16

25 14

20 12

15 10
0 0.5 1 1.5 2 2.5 3 3.5 0 0.5 1 1.5 2 2.5 3 3.5
Frequency (GHz) Frequency (GHz)

522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com

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NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier

S21 vs. Frequency S11 vs. Frequency

VD= 4.9 v, ID= 80 mA VD= 4.9 v, ID= 80 mA
25 0
+25°C
+25°C -5 TL -40°C
20 TL -40°C +85°C
+85°C -10

S11(dB)
S21(dB)

15 -15

-20
10
-25

5 -30
0 1 2 3 4 5 6 0 1 2 3 4 5 6
Frequency (GHz) Frequency (GHz)

S12 vs. Frequency S22 vs. Frequency

VD= 4.9 v, ID= 80 mA VD= 4.9 v, ID= 80 mA
-15 -5
+25°C +25°C
-17 TL -40°C -10 TL -40°C
+85°C +85°C
-15
-19
S12(dB)

S22(dB)

-20
-21
-25
-23
-30

-25 -35
0 1 2 3 4 5 6 0 1 2 3 4 5 6
Frequency (GHz) Frequency (GHz)

VD vs. ID over Temperature for fixed

VD vs. Temperature for Constant ID = 80 mA
VS= 8 v, RBIAS= 39 ohms *
95 5.3

90 5.1
+85°C
85
VD(Volts)

4.9
ID(mA)

+25°C
80
-40°C 4.7
75
4.5
70

65 4.3
4.6 4.7 4.8 4.9 5.0 5.1 -40 -15 10 35 60 85
VD(Volts) Temperature(°C)

* Note: In the applications circuit on page 4, RBIAS compensates for voltage and current variation over temperature.

522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com

EDS-101105 Rev. OBS
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 OBSOLETE Preliminary
NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier

Basic Application Circuit

Application Circuit Element Values

R BIAS
VS Reference
Frequency (Mhz)

Designator 500 850 1950 2400 3500

1 uF 1000 CD CB 220 pF 100 pF 68 pF 56 pF 39 pF

pF
CD 100 pF 68 pF 22 pF 22 pF 15 pF
LC
LC 68 nH 33 nH 22 nH 18 nH 15 nH
4
1 3
RF in NGA-586 RF out
Recommended Bias Resistor Values for ID=80mA
CB 2 CB RBIAS=( VS-VD ) / ID

Supply Voltage(VS) 7.5 V 8V 10 V 12 V

RBIAS 33 39 62 91
VS
1 uF Note: RBIAS provides DC bias stability over temperature.
RBIAS
1000 pF
Mounting Instructions
CD
LC 1. Use a large ground pad area under device pins 2
and 4 with many plated through-holes as shown.
N5

CB CB
2. We recommend 1 or 2 ounce copper. Measurements
for this data sheet were made on a 31 mil thick FR-4
board with 1 ounce copper on both sides.

Pin # Function D escription

Part Identification Marking
1 RF IN RF i nput pi n. Thi s pi n requi res the use
The part will be marked with an “N5” designator on the of an external D C blocki ng capaci tor
top surface of the package. chosen for the frequency of operati on.
3 2, 4 GND C onnecti on to ground. Use vi a holes
for best performance to reduce lead
i nductance as close to ground leads as
possi ble.
4 N5 2
3 RF OUT/ RF output and bi as pi n. D C voltage i s
BIAS present on thi s pi n, therefore a D C
blocki ng capaci tor i s necessary for
1 proper operati on.

Part Number Ordering Information

Caution: ESD sensitive
Appropriate precautions in handling, packaging Part Number Reel Size Devices/Reel
and testing devices must be observed.
NGA-586 7" 1000

522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com

EDS-101105 Rev. OBS
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 OBSOLETE Preliminary
NGA-586 DC-5.5 GHz Cascadable MMIC Amplifier

PCB Pad Layout

Dimensions in inches [millimeters]

Nominal Package Dimensions

Dimensions in inches [millimeters]
Refer to drawing posted at www.sirenza.com for tolerances.

522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC http://www.sirenza.com

EDS-101105 Rev. OBS
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