KKKL2173

Analog Electronics

Chp. 6: Field-Effect Transistors

Rosmina Jaafar
 Introduction
 FETs (Field-Effect Transistors) are very much like BJTs.

 Similarities:
 Amplifiers
 Switching devices

 Differences:
 FETs are voltage-controlled devices,
whereas BJTs are current-controlled devices.
 FETs have higher input impedance, but BJTs have higher gains.
 FETs are less sensitive to temperature variations.
 FETs are smaller, hence more easily integrated (ICs).

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 Types of FETs
• JFET (Junction Field-Effect Transistor)
• MOSFET (Metal-Oxide-Semiconductor Field-
Effect Transistor)
– D-MOSFET (Depletion MOSFET)
– E-MOSFET (Enhancement MOSFET)

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 JFET construction
 There are two types of
JFETs:
 n-channel
 p-channel

 There are 3 terminals:

 Drain (D) and Source (S)
connected to n-channel.
 Gate (G) is p-type
material.

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 JFET symbols

n-Channel JFET p-Channel JFET

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 Basic Operation of a JFET
 JFET operation can be
compared to a garden hose:

 Source (S) : Water pressure due to

accumulation of electrons at the
negative pole of the drain-source
voltage.

 Drain (D) : the positive pole of the

applied drain-source voltage.

 Gate (G) controls the width of the

channel and, therefore, the flow rate of
charges from S to D.
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 JFET operating characteristics
 3 basic operating conditions for a JFET:
 Case 1: VGS = 0 V , and VDS > 0 V.
 Case 2: VGS < 0 V (-V) , and VDS > 0 V (+V).
 Case 3: Voltage-controlled resistor.

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 Electrons attracted to D, establishing
current (ID)

 Increasing VDS increases the depletion

region, decreases the size of the n-
channel,

 which increases the resistance of the n-

channel.

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 JFET Operating Characteristics:
Case 1: VGS = 0 V , and VDS > 0 V (+V)

 When VGS = 0 V, and VDS > 0 V (+V)

 If VDS is further increased to a

more positive voltage, then the
depletion zone gets larger that it
pinches-off the n-channel.

 ID would reach a saturation level

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 JFET Operating Characteristics:
Case 1: Saturation
 At the pinch-off point:
 Further increase in VDS does
not produce increase in ID

 ID is at saturation or
maximum, known as IDSS

 The ohmic value of the

channel is maximum.

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 JFET Operating Characteristics:
Case 2: VGS < 0 V (-V) , and VDS > 0 V (+V).

 As VGS becomes more

negative, the
depletion region
increases.

 Channel width
decreases

 ID decreases
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 JFET Operating Characteristics:
Case 2: VGS < 0 V (-V), and VDS > 0 V (+V)

 As VGS becomes more

negative:

 The JFET experiences

pinch-off at a lower
VDS

 Eventually ID reaches 0
A. VGS = Vp or VGS(off).

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 JFET Operating Characteristics:
Case 3: Ohmic Region (voltage controlled resistor)
 Region to the left of pinch-off point is the ohmic region.
 JFET can be used as a variable resistor, where VGS controls
the drain-source resistance (rd).
 As VGS becomes more negative, the resistance (rd) increases.
ro
rd 
2
 V 
 1  GS 
 VP 

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 JFET animation

 http://www.learnabout-electronics.org/fet_03.php

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 p-Channel JFETs
 The p-channel JFET behaves the same as the n-channel
JFET, except the polarities and currents are reversed.

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 JFET Transfer Characteristics
 The transfer characteristics of input-to-output of a
JFET not as straightforward as a BJT.

 For a BJT: Ic =  IB

 In a JFET, the relationship of VGS (input) and ID (output)

is not linear:

Shockley’s Equation 2
 V 
ID  I  1 GS 
DSS  V 
 P 
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 Plotting JFET Transfer Curve
 ID for a given value of VGS plotted graphically

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 Plotting The JFET Transfer Curve:
Shockley’s Equation
 Using IDSS and Vp (VGS(off)) values found in a spec sheet,
the transfer curve can be plotted:

Step 1  V 
2
I D  I DSS  1  GS 
 VP 
Solving for VGS = 0V ID = IDSS

2
Step 2  V 
I D  I DSS  1  GS 
 VP 
Solving for VGS = Vp (VGS(off)) ID = 0A

Step 3 2
 V 
I D  I DSS  1  GS 
 VP 
Solving for VGS = 0V to Vp
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 Plotting The JFET Transfer Curve:
Shorthand Method
 The transfer curve can be sketched quickly with
acceptable degree of accuracy using the four plot
points defined below:
VGS ID

0 IDSS

0.3VP 0.5IDSS

0.5VP 0.25IDSS

VP 0

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Example 1 (page 399)
 Example 1 (page 399)
VGS ID
0 IDSS
0.3VP = -1.8 V 0.5IDSS = 6.0 mA
0.5VP = -3.0 V 0.25IDSS = 3.0 mA
VP 0
Metal-Oxide-Semiconductor
Field-Effect Transistors
(MOSFETs)
 Introduction
 A type of FET made by placing a (Metal) gate over
an Oxide layer, above a Semiconductor channel.

 MOSFETs have characteristics similar to JFETs and

additional characteristics that make then very
useful.

 There are two types of MOSFETs:

 Depletion-Type / D-MOSFETs
 Enhancement-Type / E-MOSFETs

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 D-MOSFET construction
 The Drain (D) and Source (S)
are n-doped regions, connected
via an n-channel

 The n-channel is below the

Gate (G), separated by a thin
insulating layer of SiO2

 The n-doped material lies on a

p-doped substrate that may
have an additional terminal
connection called substrate
(SS).
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D-MOSFET Symbols

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Basic Operation of D-MOSFET
VGS = 0 V , and VDS > 0 V (+V)

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Basic Operation of D-MOSFET
VGS < 0 V (-V), and VDS > 0 V (+V)

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 Depletion-MOSFET animation
 http://wps.pearsoned.com/wps/media/objects/11427/1170
2033/Biasing%20of%20D%20Mosfet.swf

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 Basic operation of D-MOSFET
 A D-MOSFET can operate in two modes:
 Depletion Mode
 Enhancement Mode

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 D-MOSFET in depletion mode
 The characteristics are similar to a JFET:
 When VGS = 0V, ID = IDSS
 When VGS < 0V (-V), ID < IDSS (-IDSS)
 The formula used to plot the transfer curve still applies:
2
 VGS 

I D  I DSS  1  
 VP 

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 D-MOSFET in Enhancement Mode
 When VGS > 0V (+V), ID > IDSS (+IDSS)
 The formula used to plot the transfer curve still applies:
 Note that VGS is now a positive polarity.
2
 VGS 
I D  I DSS 1  
 VP 

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 P-channel D-MOSFETs
 The p-channel D-MOSFET behaves the same as the n-
channel D-MOSFET, except the polarities and currents
are reversed.

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D-MOSFET example

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 D-MOSFET
example
VGS ID
0 IDSS
0.3VP = -1.2 V 0.5IDSS = 5.0 mA
0.5VP= -2.0 V 0.25IDSS = 2.5 mA
VP 0

2
 VGS 
I D  I DSS 1  
 VP 

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 E-MOSFET construction
 The Drain (D) and Source (S) are n-
doped regions.

 There is no ready channel.

 The Gate (G) above the p-doped

substrate separated by a thin insulating
layer of SiO2.

 The n-doped material lies on a p-doped

substrate that may have an additional
terminal connection called substrate
(SS).

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E-MOSFET Symbols

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Basic Operation of E-MOSFET

VGS = 0 V , and VDS > 0 V (+V)

No channel
No current conduction

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Basic Operation of E-MOSFET
VGS > 0 V (+V) , and VDS > 0 V (+V)

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 Basic Operation of E-MOSFET
VGS > 0 V (+V) , and VDS >> 0 V (++V)

VDG = VDS - VGS

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 Enhancement-MOSFET animation
 http://www-
g.eng.cam.ac.uk/mmg/teaching/linearcircuits/mosfet.html

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 Basic Operation of E-MOSFET
 The E-MOSFET only operates in the enhancement mode:
 VGS is always positive. As VGS increases, ID increases
 As VGS is kept constant and VDS is increased, then ID saturates (IDSS) and
the saturation level, VDSsat is reached.

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 E-MOSFET Transfer Curve
 To determine ID given VGS: I D  k (VGS  VT ) 2 I D(ON)
k
 Where: (VGS(ON)  VT) 2
 VT = Threshold voltage or voltage at which the MOSFET turns on
 k = Constant found in the specification sheet
VDsat  VGS  VT

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 P-channel E-MOSFETs
 The p-channel E-MOSFET behaves the same as the n-
channel E-MOSFET, except the polarities and currents
are reversed.

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E-MOSFET example

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Fig.40: 2N4351
e-MOSFET

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E-MOSFET example

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Summary Table (page 425)

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 FETs tutorial assignment

Solve the following Chap. 6 problems:

10, 12, 30, 35(c), 36

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