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Class AB Operation
V BB
2VT iN iP IQ
I N =I P =I Q = I S e V T ln V T ln =2 V T ln
v BEN v EBP IS IS IS
vT VT
Also: i N =I S e & i P =I S e
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
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ESE319 Introduction to Microelectronics
i N =i P i L
V T ln
iN
IS
V T ln
iP
IS
=2 V T ln
IQ
IS
V T ln
iN iP
I 2S
=2V T ln
IQ
IS
ln i N i P =ln I 2Q
Constant base voltage condition: i N i P =I Q2
vO i N i N −i L =I Q2 or i P i P i L =I 2Q
i L= for vI > 0 V for vI < 0 V
RL
Hence:
2 2
i 2N −i N i L −I Q2 =0 or i P i P i L −I Q =0
for vI > 0 V for vI < 0 V
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
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ESE319 Introduction to Microelectronics
1⋅10−6 1
i P= −3
=0.1 mA= iN
10⋅10 100
The Class AB circuit, over most of its input signal range, operates
as if the QN or QP transistor is conducting and the QP or QN transistor
is cut off.
VCC
VBB/2
RSig VBB/2
RL
-VCC
V BB
=0.5V
2
V BB
=0.7V
2
VCC
+ +
IO
- VBE1 VBE2- V BE2=V T ln
emitter IS
IO Re
degeneration I REF I S I REF
V BE1−V BE2=V T ln =V T ln
IS IO IO
V CC −V BE1 12V −0.7 V
I REF = = =1 mA V BE1 =V BE2I O R e
R 11.3k
Note: Pages 653-656 in Sedra & Smith Text. I O R e =V T ln
I REF
IO
Note Re > 0 iff IO < IREF
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
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ESE319 Introduction to Microelectronics
VCC
R
IREF
IO designer):
Re=
VT
IO
ln
IO
I REF
IO VT I REF 0.025V 10 m A
Re= ln = ln
If Re specified and IREF given: IO IO 10 A 10 A
VT
I O=
Re
ln I REF −ln I O .=2500 ln 1000=17.27 k
Solve for IO graphically. R=1.13 k R e =17.27 k
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
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ESE319 Introduction to Microelectronics
.≈.
v x −−v r ≫1/ g m
i x =g m v i ro=g m v
ro
Rout is greatly enhanced by
v =−r ∥Re i x
adding emitter degeneration.
v x r ∥R e i x vx
i x =−g m r ∥R e i x − ⇒ R out = = Re∥r 1g m r o
ro ro ix
g m r o ≫1
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
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ESE319 Introduction to Microelectronics
I O ≈2 mA
IREF ION
R=2.8 kΩ
Re=10 Ω R =100 Ω
iN L
V CC −V BE1
Amplitude: 0 Vp iIiLLL R=
Re=10 Ω I REF
Frequency: 1 kHz
R=2.8 kΩ
IREF IOP Re=
VT
IO
ln
I REF
IO
PNP Widlar current mirror
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
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ESE319 Introduction to Microelectronics
Class AB IREF = 4 mA Current Bias Simulation
NPN Widlar current mirror
Amplitude: 0 Vp
4.031m
Frequency: 1 kHz
2.329m
Quiescent Power
Dissipation vI = 0 V:
P Disp =P D−av =76.31 mW 75.53 mW
.=151.84 mW 2.270m
4.025m
Amplitude: 12 Vp
Frequency: 1 kHz
Q1 2. Q3 ≠ Cutoff =>
v BQ3 ≥ v I 0.7V
v BQ3=V CC −i REF R
v I ≤ V CC −i REF R−0.7 V =v I −max2
v I −max =max v I −max1 , v I −max2
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
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ESE319 Introduction to Microelectronics
PD+av
V BQ3 PL-av
VI NOTE:
2.697m
VO 1. Linear operation up to VI = 9 V:
PDav = 946mW, PLav = 510mW =>
PLav P Lav 510 mW
= = =0.540.785
P Dav 946 mW
PD-av
2. At VI = 10 V: VBEQ3 = VBN – VI = -0.1V
I OP
1.776u NPN Q3 is cutoff for VI ≥ 9.5 V.
4.734m 3. By symmetry PNP Q4 is cutoff
PD-av
for VI ≤ -9.5V .
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
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ESE319 Introduction to Microelectronics
Conclusions
ADVANTAGE:
Class AB operation improves on Class B linearity.
DISADVANTAGES:
1. Emitter resistors absorb output power.
2. Power Conversion Efficiency is less than Class B.
3. Temperature matching will be needed – more so.
if emitter resistors are not used.
TRADEOFFS:
Tradeoffs - involving bias current - between power
efficiency, power dissipation and output signal swing
need to be addressed.
2008 Kenneth R. Laker (based on P. V. Lopresti 2006) updated 11Nov08 KRL
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