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160
Distribution A: Approved for public release; distribution unlimited.
50 60 30
Pout(@f=13GHz)
55
Figure 2. Measured performance parameters of the Figure 3. Measured performance of the high-end Ku-band
low-end Ku-band GaN HPA as a function of input power. GaN HPA as a function of frequency. Vdd =20 V, Pulse Width /
Vdd =26 V, Pulse Width / Duty Cycle =100 µs / 3%, Room Duty Cycle =10 µs / 10%, Room Temperature. The inset is a
Temperature. photograph of a fabricated high-end Ku-band GaN HPA. Chip
size is 4.8 mm x 2.9 mm.
161
60 50 40
Pout(@f=16GHz)
PAE(@f=16GHz)
30 30 0
25 -10
20
20 -20
Pout(@Pin=17dBm)
10 PAE(@Pin=17dBm)
15 -30
SS Gain(@Pin=0dBm)
SS InpRetLoss(@Pin=0dBm)
0 10 -40
0 5 10 15 20 25 19 19.5 20 20.5 21 21.5 22 22.5
Figure 4. Measured performance parameters of the Figure 5. Measured performance of the K-band GaN HPA
high-end Ku-band GaN HPA as a function of input power. as a function of frequency. Vdd =20 V, Pulse Width / Duty
Vdd =20 V, Pulse Width / Duty Cycle =10 µs / 10%, Room Cycle =10 µs / 10%, Room Temperature. The inset is a
Temperature. photograph of a K-band GaN HPA. Chip size is 4.8 mm x 2.5
mm.
162
Table 3. Drain supply voltage dependence of the K-band Table 4. Comparison with published Ku- and K-band GaN
HPA frequency-averaged performance. Pulse Width / Duty HPAs.
Cycle =10 µs / 10%, Room Temperature.
Reference Frequency, Psat , PAE Linear Waveform
Vdd , Small-signal Gain, Psat , PAE @Psat , Pdc @Psat , GHz Watts @Psat ,% Gain, dB
V dB Watts % Watts Low-end 13-14.5 48 43 19 pulsed
16 33.3 14.3 33.3 42.8 Ku-band
20 35.3 17.8 29.3 60.6 HPA
24 35.7 19.5 24.3 80.0 [5] 13.4-15.5 50 33 31 CW
[6] 13.5-14.5 18 38 22 CW
[7] 13.75-14.5 40 26 26 pulsed
1 13.75-14.5 25 20 24 CW
delta(Pout) [8] 14.8-15.3 62 45 10 pulsed
[9] 13.4-16.5 25 30 35 CW
In reference to 10% Duty Cycle
delta(PAE)
Change in Output Power, dB
Ku-band
-1 HPA
[10] 18-19 10 30 20 CW
K-band 19.5-22 18 29 35 pulsed
-2 HPA 19.5-22 13 24 32 CW
[11] 21-24 5 47 14 CW
-3
and 4.2% points respectively. This degradation is largely due 5. TGA2239-CP: 13.4-15.5 GHz 50W
to an increase in the output stage FET channel temperature. GaN Power Amplifier, Qorvo Datasheet,
http://www.triquint.com/products/p/TGA2239-CP.
Conclusion 6. Y.S.Noh et al, “Ku-band GaN HPA MMIC with high-
In this paper, we presented information on the development power and high-PAE performances,” Electronics Letters,
and characterization of three new Ku- and K-band High Vol. 50, No. 19 , September 2014.
Power Amplifier (HPA) MMICs, implemented in Raytheon’s 7. CMPA1D1E025F: 25W, 13.75-14.5 GHz, 40V, Ku-band
production-released mm-wave GaN technology. The circuits GaN MMIC, Power Amplifier, Wolfspeed Datasheet,
demonstrate state-of-art performance over a frequency range http://www.wolfspeed.com/media/downloads/478/
that spans from 13 to 22 GHz. Comparison of the measured CMPA1D1E025F.pdf.
frequency-averaged data with relevant published results on
8. K.Yamauchi et al, “A 45% Power Added Efficiency, Ku-
Ku- and K-band GaN HPAs is tabulated in Table 4.
band 60W GaN Power Amplifier,” 2011 IEEE MTT-S
International Microwave Symposium, 2011.
Acknowledgment
The Ku-band HPAs have been developed under Raytheon 9. TGA2219: 13.4-16.5 GHz 25W GaN
IRAD funding. The K-band HPA has been developed under a Power Amplifier, Qorvo Datasheet,
sub-contract from Nuvotronics,Inc (PI: Steve Huettner) on an http://www.triquint.com/products/p/TGA2219.
Air Force Phase 2 SBIR topic AF103-073. The authors would 10. C.Friesicke et al, “A 40 dBm AlGaN/GaN HEMT Power
like to acknowledge Tom Charbonneau for layout support; Amplifier MMIC for SatCom Applications at K-Band,”
Erin Bernay, Tony Puliafico, Brian Morrison and Phil Phalon 2016 IEEE MTT-S International Microwave Symposium,
for circuit characterization. 2016.
11. C.F.Campbell et al, “A K-Band 5W Doherty Amplifier
References
MMIC Utilizing 0.15µm GaN on SiC HEMT Technol-
1. J.C.Zolper, “Wide Bandgap Semiconductor Microwave
ogy,” 2012 IEEE Compound Semiconductors Integrated
Technologies: From Promise to Practice,” 1999 Interna-
Circuit Symposium, 2012.
tional Electron Devices Meeting, 1999.
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