DIP Type Transistors

NPN Transistors
2SC3074
TO-251

■ Features
● Low collector saturation voltage
1 2 3
● High speed switching time: tstg = 1.0 μs (typ.)
● Complementary to 2SA1244

1 2 3

1 Base
2 Collector
Unit: mm 3 Emitter
■ Absolute Maximum Ratings Ta = 25℃
Parameter Symbol Rating Unit
Collector - Base Voltage VCBO 60
Collector - Emitter Voltage VCEO 50 V
Emitter - Base Voltage VEBO 5
Collector Current - Continuous IC 5
A
Base current IB 1
Ta = 25°C 1
Collector Power Dissipation PC W
Tc = 25°C 20
Junction Temperature TJ 150
℃
Storage Temperature Range Tstg -55 to 150

■ Electrical Characteristics Ta = 25℃

Parameter Symbol Test Conditions Min Typ Max Unit
Collector- base breakdown voltage VCBO Ic= 100 μA， IE= 0 60
Collector- emitter breakdown voltage VCEO Ic= 10 mA， IB= 0 50 V
Emitter - base breakdown voltage VEBO IE= 100μA， IC= 0 5
Collector-base cut-off current ICBO VCB= 50 V , IE= 0 1
uA
Emitter cut-off current IEBO VEB= 5V , IC=0 1
Collector-emitter saturation voltage VCE(sat) IC=3 A, IB=150mA 0.4
V
Base - emitter saturation voltage VBE(sat) IC=3 A, IB=150mA 1.2
hFE(1) VCE= 1V, IC= 1 A 70 240
DC current gain
hFE(2) VCE= 1V, IC= 3 A 30
OUTPUT
Turn-on time ton 20 μs IB1 0.1
INPUT
10 Ω
IB1

Storage time tstg IB2 1 uS

IB2
VCC = 30 V
B1 = 0.15 A , IB2 = 0.15 A
Fall time tf Duty cycle ≤ 1% 0.1

Collector output capacitance Cob VCB= 10V, IE= 0,f=1MHz 80 pF

Transition frequency fT VCE= 4V, IC= 1 A 120 MHz

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 DIP Type Transistors

NPN Transistors
2SC3074
■ Classification of hfe(1)
Type 2SC3074-O 2SC3074-O
Range 70-140 120-240

■ Typical Characterisitics
IC – VCE VCE – IC
10 1.2
Common emitter
Common emitter
Tc = 25°C
100 90 1.0 Tc = 25°C
8 80
(A)

Collector-emitter voltage
70 IB = 10 mA
60 0.8
Collector current IC

20 40 60 80 100
6 50

VCE (V)
40 150
0.6

4 30 200

0.4 300
20
500
2
IB = 10 mA 0.2

0 0
0 2 4 6 8 10 12 0 1 2 3 4 5 6 7

Collector-emitter voltage VCE (V) Collector current IC (A)

VCE – IC VCE – IC
1.2

1.0 Common emitter Common emitter

Collector-emitter voltage VCE (V)

Collector-emitter voltage VCE (V)

Tc = 100°C 1.0 Tc = −55°C

0.8
20 40 60 80 100 IB = 20 mA
0.8
120 40 120 160 200
IB = 10 mA
0.6
0.6

150
0.4 250
200 0.4 300
500 500

0.2 0.2

0 0
0 1 2 3 4 5 6 7 0 1 2 3 4 5 6 7

Collector current IC (A) Collector current IC (A)

hFE – IC VCE (sat) – IC

1000 1
Common emitter Common emitter
Collector-emitter saturation voltage

500 VCE = 1 V 0.5 IC/IB = 20

300 0.3
DC current gain hFE

Tc = 100°C
VCE (sat) (V)

Tc = −55°C
25 25
100 0.1

50 −55 0.05
100
30 0.03

10 0.01
0.03 0.1 0.3 1 3 10 0.03 0.1 0.3 1 3 10

Collector current IC (A) Collector current IC (A)

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 DIP Type Transistors

NPN Transistors
2SC3074
■ Typical Characterisitics

VBE (sat) – IC IC – VBE

10 5

Common emitter Common emitter

5 VCE = 1 V
Base-emitter saturation voltage

IC/IB = 20
4
3

(A)
VBE (sat) (V)

Collector current IC
3
1 Tc = −55°C
Tc = 100°C −55
0.5
2 25
25
0.3 100

0.1
0.03 0.1 0.3 1 3 10
0
Collector current IC (A) 0 0.4 0.8 1.2 1.6 2.0 2.4

Base-emitter voltage VBE (V)

Safe Operating Area PC – Ta

10 28
IC max (pulsed)* 1 ms* (1) Tc = Ta infinite heat sink
5
PC (W)

IC max (continuous) 24
(2) Ceramic substrate
3 10 ms*
(1) 50 × 50 × 0.8 mm
20
(A)

DC operation (3) No heat sink

Collector power dissipation

1 Tc = 25°C
Collector current IC

16
0.5
0.3 12

8
0.1
*: Single nonrepetitive pulse
0.05 Tc = 25°C 4 (2)
0.03 Curves must be derated (3)
VCEO max
linearly with increase in 0
0 20 40 60 80 100 120 140 160
temperature.
0.01
0.1 0.3 1 3 10 30 100 Ambient temperature Ta (°C)

Collector-emitter voltage VCE (V)

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