College of Engineering

Electrical Engineering Department

Electronics 1 Lab (ELE241L)

Lab 10
MOSFET Applications

Bassam yousuf – 55388

Ahmed khalid – 60961
Abstract:

This lab was divided into two sections. In the first part, we constructed and tested a common-

source MOSFET amplifier circuit. We measured the DC currents and voltages, and then

connected the AC signal and measured the gain and the input and output resistance, as we

previously did in BJT amplifiers. In the second part of the experiment, we studied the behavior

of a CMOS inverter, which is implemented using a PMOS and an NMOS together. We obtained

the voltage transfer characteristics and understood the difference between static and dynamic

behavior of a CMOS inverter.

Equipment and Materials:

 Resistors ( 14 W): 2.2 MΩ, 820KΩ, 3.9 kΩ, 1kΩ

 Capacitors: 100F( 3 Nos.).

 MOSFET BS170

 DMM

 Function generator

 Breadboarding Socket

 DC Power Supply (0-30V)

Procedure & Results : Connect the given MOSFET as shown in fig.1.

i- MOSFET Amplifier
VDD
15V R3 R1
1KΩ
2.2M 3.9K
C2
0 Vout
C1 100u
VGG BS170
V1 100u
Vac
R2
R4 Cs
820 K 1k 100u

Fig. 1

 First, we connected the DC components only, and measured the resistance of the
resistors used in order to get more accurate results.
 R1= 2.232MΩ R2=819kΩ RD=3.867kΩ RS=0.998kΩ
 We then measured the DC biasing of the circuit:
VGSQ=2.332 V
VDSQ=6.62 V
IDQ = Vd / Rd = 6.593/3.9k = 1.69 mA
 We then added the AC signal and the capacitors and measured the voltage gain by
connecting an oscilloscope across the input and output at f=10kHz.
 Vi=42mV
Vo=2.20V
Av = 2.2/42m = 52.3
 The transcondunctance (gm) was given to us as 11 x 10-3 S
Av = -gM x Rd = -11m x 3.9k = -42.9
 We measured the input resistance we placed a variable resistor in series with Vs and
varied it until the output voltage became half of its previous value.
Input resistance (Zi) = RVi – internal resistance = 290kΩ - 50Ω = 290.95 kΩ = 0.290 MΩ
 We also measured the output resistance by placing a variable resistance across the
output and changing it until the output voltage became half of its previous value.
Output resistance (ZO) = RVo= 3.5kΩ.
ii- CMOS inverter

 Using the CMOS IC, and the given pin configuration, we connected the circuit to get
the following circuit shown in the figure below:

 To find the static transfer characteristics of the inverter, we fixed V DD at 5V and varied
the input voltage (A) and measured the output voltage (Q). The data were recorded
in the following table:
 Vin Vout Vin Vout Vin Vout

0 4.992 2 4.8 2.50 0.3215

0.2 4.992 2.05 4.867 2.55 0.2471

4.992
0.4 2.10 4.832 2.60 0.1930
4.992
0.6 2.15 4.795 2.65 0.1552
4.992
0.8 2.20 4.750 2.70 0.1195
4.992
1 2.25 4.690 2.75 0.0947

1.2 4.990 2.30 4.591

1.4 4.987 2.35 4.434

1.6 4.980 2.40 3.378

1.8 4.956 2.45 0.7127

Table 1

 We also found the dynamic behavior of the CMOS inverter by replacing the input
voltage with a signal generator to a 100Hz square wave with an amplitude of 5V. We
observed the input and output waveform using the oscilloscope.

Calculate the biasing voltages in the amplifier circuit. Compare with the measured
values.
 VR2= 820k / 820k + 2.2M *15V = 4.07V

Solving the equations, we get:

 VGSQ = 2.045 V

 IDQ = 0.875*10-3 (2.05– 2.1)2 = 2.19 mA

 VDSQ = VDD – VRD – VRs = 15 – (2.19)(3.9) – (2.19)(1)= 7.12 V

% error of VGSQ = 2.332-2.045/2.045 * 100 = 14 %

% error of IDQ = 2.19-1.69/2.19 *100 = 22.83%

% error of VDSQ = 7.12-6.62/7.12 *100 = 7%

 Calculate the gain, input resistance and output resistance of the common source amplifier
and compare it with the expected results.

AV= - gm RD = - 11 mS * 3.9 kΩ = -42.9

Zi = R1\\R2 = 2.2M\\820k = 597.35k ohm

Zo = Rd = 3.9k ohm

% error of Av = 52.3-42.9/42.9 *100 = 21.9 %

 % error of Zi= 597.35-290.95 / 597.35 * 100 = 51.3%

% error of Zo= 3.9-3.5 / 3.9 * 100 = 10.3%

 Plot the transfer characteristics of the CMOS inverter

Graph 1.

 Sketch the input and output waveform for part 2 of the CMOS inverter
As we expected, the output waveform is inverted. This shows us the CMOS inverter works as a
digital logic gate (inverter/NOT)

Input Output
0 1
1 0

Discussion:

 Discuss the advantages of a MOSFET amplifier compared to a BJT amplifier.

 The MOSFET has better buffer on the input side because it has nearly infinite input resistance

vs. base current BJT. (Less power consumed)

 MOSFET has lower noise for high signal sources. (Less signal distortion)

 MOSFET functions as a better analog switch

 MOSFET is compatible with digital CMOS, which ensures better cost advantage and

compatibility.

 Discuss the phase relation between the input and output signals of a MOSFET amplifier.

The MOSFET amplifier, has a negative sign in the voltage gain, this negative sign reveals that a

180 degrees phase shift occurs between the input and output signals.

 Discuss the applications of a CMOS inverter.

 The CMOS inverter enables small chips in size to behave like high operating speeds

 Can be used as a NOT gate.

 Why do we get a current in the CMOS inverter circuit? Explain your results using suitable

diagrams.
 When the input voltage is low , the NMOS transistor’s channel is in a high resistance state (NMOS is

off) , limiting the current flow , but the PMOS transistor’s channel is in a low resistance state , thus

more current can flow from the input or supply to the output .

When the input voltage is high , the PMOS transistor’s channel is in a high resistance state (PMOS is

off) , limiting the current flow , but the NMOS transistor’s channel is in a low resistance stat, thus

more current can flow from the input or supply to the output .

Conclusion:

Upon finishing this lab, we understood the behavior of the MOSFET amplifier and CMOS. We were

able to construct both devices and test them correctly. We learnt how the MOSFET amplifier

functions in a DC and AC circuit. We also learnt two possible scenarios that can be encountered

when using a CMOS; the first scenario is conducted when the input voltage is high, and the output

voltage is low; or when the input voltage is low, but the output voltage high; Thus, we concluded

that a CMOS acts as a digital logic gate. Finally, all of the circuit implementations and the analysis of

each device, helped us understand the main objectives of this lab.