Hall Ticket No Question Paper Code: AEC001

INSTITUTE OF AERONAUTICAL ENGINEERING

(Autonomous)
MODEL QUESTION PAPER −I

Four Year B.Tech III Semester End Examinations, November − 2017

Regulation: R16
ELECTRONIC DEVICES AND CIRCUITS
Time: 3 Hours Max Marks: 70

Answer any ONE question from each Unit

All questions carry equal marks
All parts of the question must be answered in one place only

UNIT - I
1 a) Derive an expression for total diode current starting from Boltzmann relationship in terms of [7M]
the applied voltage.

b) Find the value of D.C. resistance and A.C resistance of a Germanium junction diode at 25˚C [7M]
with reverse saturation current, Io = 25μA and at an applied voltage of 0.2V across the diode?

2 a) Explain the V-I characteristics of Zener diode and Analyze between Avalanche and Zener [7M]
Break downs?

b) Determine the values of forward current in the case of P-N junction diode, with I 0=10μA, [7M]
Vf=0.8V at T=3000K.Assume silicon diode?
UNIT - II
3 a) With suitable diagrams, explain the working of centre-tapped full wave rectifier. Derive [7M]
expressions for VDC, IDC, Vrms and Irms for it?

b) Determine the ripple factor of an L-section filter comprising a 10H choke and 8μF capacitor, [7M]
used with a FWR. The DC voltage at the load is 50V. Assume the line frequency as 50Hz?

4 a) Explain the tunneling phenomenon and explain the characteristics of tunnel diode with the [7M]
help of necessary energy band diagrams?

b) Explain the construction and working of photo diode? List various applications of Photo [7M]
Diode.
UNIT – III
5 a) Define Early-effect? Explain why it is called as base-width modulation? Discuss its [7M]
consequences in transistors in detail?

b) Give constructional details of UJT and explain its operation with the help of equivalent [7M]
circuits?

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6 a) Sketch the drain characteristics of MOSFET for different values of V GS& mark different [7M]
regions of Operation.

b) The P-channel FET has a |IDS|=-12mA, |Vp|=5V, VGS is 1.6 V. Determine ID, Gm and Gm0? [7M]

UNIT – IV
7 a) Define biasing? Draw the fixed bias circuit and obtain the expression for the stability factor? [7M]

[7M]
b) Draw the emitter feedback bias circuit and obtain the expression for the stability factor?

8 a) Define Thermal Runaway in transistors? Derive the condition to prevent Thermal Runaway [7M]
in Bipolar Junction Transistors?

b) Design a collector to base bias circuit using silicon transistor to achieve a stability factor of [7M]
20, with the following specifications: VCC = 16V, VBE = 0.7V, VCEQ = 8V, Icq=4ma & β=50?

UNIT – V
9 a) Draw the circuit diagram & small signal equivalent of CB amplifier using accurate h- [7M]
parameter model. Derive expressions for A V, AI, RI and RO?

b) A common Emitter circuit has the following, components: R s=1kΩ, R1=110KΩ, R2=12KΩ, [7M]
Rc=6KΩ. h- Parameters are hie=1.2K, hre=2.5x10-4, hfe=75,hoe=25uA/V.

10 a) Explain the effect of external source resistance on the voltage gain of a common source [7M]
amplifier? Explain with necessary derivations?
b) Draw the small-signal model of common drain FET amplifier. Derive expressions for voltage [7M]
gain and output resistance?

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 ELECTRONIC DEVICES AND CIRCUITS

III Semester: ECE

Course Code Category Hours / Week Credits Maximum Marks
L T P C CIA SEE Total
AEC001 Foundation 3 1 - 4 30 70 100
Contact Classes: 45 Tutorial Classes: 15 Practical Classes: Nil Total Classes: 60
OBJECTIVES:

The course should enable the students to:

I. Be acquainted with electrical characteristics of ideal and practical diodes under forward and reverse

bias to analyze and design diode application circuits such as rectifiers and voltage regulators.

II. Utilize operational principles of bipolar junction transistors and field effect transistors to derive
appropriate small-signal models and use them for the analysis of basic amplifier circuits.

UNIT-I SEMICONDUCTOR DIODES Classes: 08

PN Junction Diode : Theory of PN diode, energy band diagram of PN diode, PN junction as a diode,

operation and V-I characteristics , static and dynamic resistances, diode equivalent circuits, diffusion and
transition capacitance, diode current equation, temperature dependence of V-I characteristics, Zener

diode characteristics ,break down mechanisms in semiconductor diodes, Zener diode as a voltage
regulator.

UNIT-II SPECIAL PURPOSE ELECTRONIC DEVICES AND RECTIFIERS Classes: 10

Special purpose electronic devices: principles of operation and characteristics of silicon controlled

rectifier, tunnel diode, varactor diode, photodiode; Half wave rectifier, full wave rectifier, general filter
consideration, harmonic components in a rectifier circuit , Inductor Filter, capacitor filter, L-Section filter,
multiple L-C section, RC filter, comparison of filters.

UNIT-III TRANSISTORS Classes: 08

Bipolar Junction Transistors: Construction of BJT, operation of BJT, minority carrier distributions and

current components, configurations, characteristics, BJT specifications; Applications: Amplifier, switch.

Field Effect Transistors: Types of FET, FET construction, symbol, principle of operation, V-I
characteristics, FET parameters, FET as voltage variable resistor, comparison of BJT and FET;
MOSFET construction and operation; Uni-Junction Transistor: Symbol, principle of operation,
characteristics, applications (UJT as relaxation oscillator).

UNIT-IV BIASING AND COMPENSATION TECHNIQUES Classes: 10

Need for biasing, BJT operating point, The DC and AC load lines, types of biasing circuits, bias stability,
stabilization factors, stabilization against variations in VBE and β; Bias compensation techniques, thermal
runaway, thermal stability, biasing the FET and MOSFET.

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UNIT-V BJT AND FET AMPLIFIERS Classes: 09
BJT small signal analysis, BJT hybrid model, determination of h-parameters from transistor

characteristics, transistor amplifiers analysis using h- parameters; FET small signal model, FET as
common source amplifier, FET as common drain amplifier, FET as common gate amplifier, generalized
FET amplifier .

Text Books:

nd
1. J. Millman, C.C.Halkias, ―Millman‘s Integrated Electronics‖, Tata McGraw-Hill, 2 Edition, 2001.

2. J. Millman, C.C.Halkias, Satyabrata Jit, ―Millman‘s Electronic Devices and Circuits‖, Tata
nd
McGrawHill, 2 Edition, 1998.
Reference Books:
st
1. Sedha.R.S, ―A Text Book of Applied Electronics‖, Sultan Chand Publishers,1 Edition, 2008.
th
2. R.L. Boylestad, Louis Nashelsky, ―Electronic Devices and Circuits‖, PEI/PHI, 9 edition, 2006.
nd
3. Gupta.J.B, ―Electron Devices and Circuits‖, S.K.Kataria & Sons, 2 Edition, 2012.

4. S. Salivahanan, N. Suresh Kumar,A. Vallavaraj, ―Electronic Devices and Circuits‖, Tata McGraw Hill,
nd
2 edition, 2011.
st
5. Anil K. Maini, Varsha Agarwal, ―Electronic Devices and Circuits‖, Wiley India Pvt. Ltd, 1 edition,

Web References:
1. http://www-mdp.eng.cam.ac.uk/web/library/enginfo/electrical/hong1.pdf

2. https://archive.org/details/ElectronicDevicesCircuits

3. http://nptel.ac.in/courses/Webcourse-contents/IIT-ROORKEE/BASIC
ELECTRONICS/home_page.htm

4. http://www.vidyarthiplus.in/2011/11/electronic-device-and-circuits-edc.html

E-Text Books:

1. http://services.eng.uts.edu.au/pmcl/ec/Downloads/LectureNotes.pdf

2. http://nptel.ac.in/courses/122106025/

3. http://www.freebookcentre.net/electronics-ebooks-download/Electronic-Devices-and-Circuits-(PDF-

313p).html
Course Home Page:

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COURSE OUTCOMES:

After completing this course the student must demonstrate the knowledge and ability to:

1. Understand the operation of various semiconductor diodes

2. Understand diode current components
3. Analyze the zener regulator characteristics
4. Analyze characteristics of different types of diodes.
5. Understand the function of diode as rectifier.
6. Analyze and design various rectifier circuits.
7. Understand the operation of rectifier with filters
8. Understand the operation of transistors in different configurations.
9. Understand the operation of field effect transistor
10. Analyze the characteristics of BJT and UJT in different modes.
11. Understand the biasing techniques of transistors.
12. Design and analyze the DC bias circuitry of BJT and FET.
13. Design biasing circuits using diodes and transistors.
14. Design small signal amplifiers using BJT.
15. Design small signal amplifiers using FET.

HOW PROGRAM OUTCOMES ARE ASSESSED:

Program Outcomes Level Proficiency

assessed by
Engineering knowledge: Apply the knowledge of S Lectures,
PO1 mathematics, science, engineering fundamentals, and an Assignments,
engineering specialization to the solution of complex Exercises.
engineering problems.
Problem analysis: Identify, formulate, review research H Design, Exercises.
PO2 literature, and analyze complex engineering problems
reaching substantiated conclusions using first principles of
mathematics, natural sciences, and engineering sciences.
Design/development of solutions: Design solutions for S --
complex engineering problems and design system
PO3 components or processes that meet the specified needs with
appropriate consideration for the public health and safety,
and the cultural, societal, and environmental considerations.
Conduct investigations of complex problems: Use S Lab sessions,
PO4 research-based knowledge and research methods including Exams
design of experiments, analysis and interpretation of data,
and synthesis of the information to provide valid
conclusions.
Modern tool usage: Create, select, and apply appropriate S Lab
PO5 techniques, resources, and modern engineering and IT tools Exercises
including prediction and modeling to complex engineering
activities with an understanding of the limitations.
The engineer and society: Apply reasoning informed by the N --
PO6 contextual knowledge to assess societal, health, safety, legal
and cultural issues and the consequent responsibilities
relevant to the professional engineering practice.

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 Environment and sustainability: Understand the impact of N --
PO7 the professional engineering solutions in societal and
environmental contexts, and demonstrate the knowledge of,
and need for sustainable development.
PO8 Ethics: Apply ethical principles and commit to professional N --
ethics and responsibilities and norms of the engineering
practice.
PO9 Individual and team work: Function effectively as an N Seminars
individual, and as a member or leader in diverse teams, and Discussions
in multidisciplinary settings.
Communication: Communicate effectively on complex N ---
engineering activities with the engineering community and
PO10 with society at large, such as, being able to comprehend and
write effective reports and design documentation, make
effective presentations, and give and receive clear
instructions.
Project management and finance: Demonstrate knowledge S Discussions,
PO11 and understanding of the engineering and management Seminars, Paper
principles and apply these to one’s own work, as a member Presentations,
and leader in a team, to manage projects and in Exercises
multidisciplinary environments.
Life-long learning: Recognize the need for, and have the H Exercises ,
PO12 preparation and ability to engage in independent and life- Development of
long learning in the broadest context of technological prototypes and
change. Mini Projects

HOW PROGRAM SPECIFIC OUTCOMES ARE ASSESSED:

Program Specific Outcomes Level Proficiency

Assessed By

Professional Skills: The ability to research, understand and H Lectures and

implement computer programs in the areas related to Assignments
PSO1
algorithms, system software, multimedia, web design, big
data analytics, and networking for efficient analysis and
design of computer-based systems of varying complexity.
Problem-Solving Skills: The ability to apply standard S Tutorials
PSO2 practices and strategies in software project development
using open-ended programming environments to deliver a
quality product for business success.
Successful Career and Entrepreneurship: The ability to S Seminars and
PSO3 employ modern computer languages, environments, and Projects
platforms in creating innovative career paths, to be and
entrepreneur, and a zest for higher studies.

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 MAPPING COURSE OUTCOMES LEADING TO THE ACHIEVEMENT OF PROGRAM OUTCOMES
AND PROGRAM SPECIFIC OUTCOMES:

Course Program Outcomes Program

Outcome specific Outcomes
s PO1 PO2 PO3 PO4 PO5 PO6 PO7 PO8 PO9 PO10 PO11 PO12 PSO1 PSO2 PSO3
1 S S H S H S
2 H S S H
3 S S H H S
4 S S S S S S S
5 S H H S S S S
6 S H S H S H S
7 S S S S H H S
8 H S S S S S S
9 H S S S S H H S
10 S H H H S H S
11 S S S S
12 H H H S H S
13 S S S S S S
14 H S H S S H H S
15 H S H S S H H S

S- Supportive H- Highly Related

MAPPING OF MODEL QUESTION PAPER QUESTIONS TO THE ACHIEVEMENT OF COURSE

OUTCOMES

Questio Course Outcomes

n CO1 CO2 CO3 CO4 CO5 CO6 CO7 CO8 CO9 CO10 CO11 CO12 CO13 CO14 CO15
Number
1(a) S H
1(b) H
2(a) S H
2(b) S H
3(a) S H H
3(b) S H
4(a) S H
4(b) S H
5(a) H H
5(b) H H
6(a) H H
6(b) H H
7(a) H H
7(b) H H
8(a) H
8(b) H
9(a) H
9(b) H
10(a) H
10(b) H

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Signature of Course Coordinator HOD,ECE

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