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Solution 1
Vo
3V
0V 1V 2V 3V Vi
Fig. 1 Transfer characteristics of an inverter
Answer:
VIL=1V, VOL=0V, so NML=1V
VIH=2V, VOH=3V, so NMH=1V
2. Draw the transistor level schematic diagram of the CMOS gate that
implements function Z:
a. Z = A B C + D + E'
b. Z = (A B C + D)
Assume that the Primary Inputs available are A, B, C, D and their
complements.
1
Answer:
3. For the following NMOS and PMOS transistors, determine the region of
operation (saturation, triode, cutoff) and the drain current ID for each of the
biasing configurations given below: (assume, for NMOS: direction of ID is Drain
to Source, PMOS: direction of ID is Source to Drain). Use the following
transistor data: NMOS: kn = 60A/V2, VTO = 0.65V, = 0.1V1. Assume (W/L)
= 1. All calculations/steps to derive the result should be shown.
a. NMOS: VGS = 3.3V, VDS = 3.3V; PMOS: VGS = 0.5V, VDS = 1.5V.
b. NMOS: VGS = 3.3V, VDS = 2.2V; PMOS: VGS = 3.3V, VDS = 2.6V.
c. NMOS: VGS = 0.6V, VDS = 0.1V; PMOS: VGS = 3.3V, VDS = 0.5V.
Answer:
a. NMOS: Since VDS > VGS Vt (3.3 > 3.3 0.65), the device is in saturation.
Therefore,
PMOS:
Since |Vgs| < |Vt|, the device is turned off. Therefore, Id = 0.
2
b. NMOS: VGS = 3.3V, VDS = 2.2V; PMOS: VGS = 3.3V, VDS = 2.6V.
Since VGS > Vt and VDS < VGS Vt, the device is in linear region.
Therefore,
Fig. 2 Circuit
3
Answer:
(a) D = AB C + ABC + A BC
B /C
/B C
A D
/B /C
/A
D = A BC + AB C + AC + B C , then:
(a) Please implement the function using transmission gate and draw the
transistor level schematic diagram.
(b) Please implement this function using a compound CMOS gate and draw
the transistor level schematic diagram.
4
Answer:
(a) /A, /B, /C represent A , B , C .
B C
/A
/B /C
/B C
B /C
/C
D
A
C
/C
/B
5
(b) /A, /B, /C represent A , B , C .
Vdd
A /A /A B
/B B
/C /C C C
A /B /C
/A B /C
/A C
B C
Gnd