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AO4614

Complementary Enhancement Mode Field Effect Transistor

General Description Features


The AO4614 uses advanced trench n-channel p-channel
technology MOSFETs to provide excellent VDS (V) = 40V -40V
RDS(ON) and low gate charge. The ID = 6A (VGS=10V) -5A (VGS = -10V)
complementary MOSFETs may be used RDS(ON) RDS(ON)
in H-bridge, Inverters and other < 31m (VGS=10V) < 45m (VGS = -10V)
applications. Standard Product AO4614 < 45m (VGS=4.5V) < 63m (VGS = -4.5V)
is Pb-free (meets ROHS & Sony 259
specifications). AO4614L is a Green
Product ordering option. AO4614 and
AO4614L are electrically identical.

D2 D1
S2 1 8 D2
G2 2 7 D2
S1 3 6 D1
G1 4 5 D1
G2 G1
SOIC-8 S2 S1

n-channel p-channel
Absolute Maximum Ratings TA=25C unless otherwise noted
Parameter Symbol Max n-channel Max p-channel Units
Drain-Source Voltage VDS 40 -40 V
Gate-Source Voltage VGS 20 20 V
Continuous Drain TA=25C 6 -5
Current A TA=70C ID 5 -4 A
B
Pulsed Drain Current IDM 20 -20
TA=25C 2 2
PD W
Power Dissipation TA=70C 1.28 1.28
Junction and Storage Temperature Range TJ, TSTG -55 to 150 -55 to 150 C

Thermal Characteristics: n-channel and p-channel


Parameter Symbol Device Typ Max Units
Maximum Junction-to-Ambient A t 10s n-ch 48 62.5 C/W
A
RJA
Maximum Junction-to-Ambient Steady-State n-ch 74 110 C/W
Maximum Junction-to-Lead C Steady-State RJL n-ch 35 50 C/W
A
Maximum Junction-to-Ambient t 10s p-ch 48 62.5 C/W
RJA
Maximum Junction-to-Ambient A Steady-State p-ch 74 110 C/W
Maximum Junction-to-Lead C Steady-State RJL p-ch 35 50 C/W

Alpha & Omega Semiconductor, Ltd.


AO4614

N Channel Electrical Characteristics (T J=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units


STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=10mA, V GS=0V 40 V
VDS=32V, VGS=0V 1
IDSS Zero Gate Voltage Drain Current A
TJ=55C 5
IGSS Gate-Body leakage current VDS=0V, VGS= 20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=250A 1 2.3 3 V
ID(ON) On state drain current VGS=10V, VDS=5V 20 A
VGS=10V, I D=6A 23.2 31
m
RDS(ON) Static Drain-Source On-Resistance TJ=125C 36 48
VGS=4.5V, I D=5A 32.6 45 m
gFS Forward Transconductance VDS=5V, ID=6A 22 S
VSD Diode Forward Voltage IS=1A,VGS=0V 0.77 1 V
IS Maximum Body-Diode Continuous Current 3 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 404 pF
Coss Output Capacitance VGS=0V, VDS=20V, f=1MHz 95 pF
Crss Reverse Transfer Capacitance 37 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 2.7
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge 8.3 nC
Qg(4.5V) Total Gate Charge 4.2 nC
VGS=10V, VDS=20V, I D=6A
Qgs Gate Source Charge 1.3 nC
Qgd Gate Drain Charge 2.3 nC
tD(on) Turn-On DelayTime 4.2 ns
tr Turn-On Rise Time VGS=10V, VDS=20V, RL=3.3, 3.3 ns
tD(off) Turn-Off DelayTime RGEN=3 15.6 ns
tf Turn-Off Fall Time 3 ns
trr Body Diode Reverse Recovery Time IF=6A, dI/dt=100A/s 20.5 ns
Qrr Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/s 14.5 nC
A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The value in
any given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 80s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve
provides a single pulse rating.
Rev 3 : Sept 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.


AO4614

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

30 20
10V 5V
VDS=5V
25 4.5V
15
20
4V
ID (A)

ID(A)
15 10 125C

10
VGS=3.5V 5 25C
5

0
0
0 1 2 3 4 5
2 2.5 3 3.5 4 4.5
VDS (Volts)
VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics

50 1.8
VGS=10V
ID=6A
Normalized On-Resistance

1.6
40
RDS(ON) (m)

VGS=4.5V VGS=4.5V
1.4
ID=5A

30 1.2
VGS=10V

1
20
0 5 10 15 20 0.8
ID (A) 0 25 50 75 100 125 150 175
Figure 3: On-Resistance vs. Drain Current and Gate Temperature (C)
Voltage Figure 4: On-Resistance vs. Junction Temperature

80 1.0E+01
ID=6A
70
1.0E+00
60
1.0E-01 125C
RDS(ON) (m)

50
IS (A)

125C 1.0E-02
40

1.0E-03 25C
30

20 1.0E-04
25C
10
2 4 6 8 10 1.0E-05
0.0 0.2 0.4 0.6 0.8 1.0
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.


AO4614

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL

10 800
VDS=20V
8 ID= 6A
600

Capacitance (pF)
Ciss
VGS (Volts)

6
400
4 Coss
200 Crss
2

0 0
0 2 4 6 8 10 0 10 20 30 40

Qg (nC) VDS (Volts)


Figure 7: Gate-Charge Characteristics Figure 8: Capacitance Characteristics

100.0
40
RDS(ON) TJ(Max)=150C
limited TA=25C
10s
30
10.0 100s
Power (W)
ID (Amps)

10ms 1ms
20
1s
1.0
10s 0.1s
TJ(Max)=150C 10
TA=25C DC

0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZJA Normalized Transient

RJA=62.5C/W
Thermal Resistance

0.1 PD

Ton
Single Pulse T

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.


AO4614

P-Channel Electrical Characteristics (T J=25C unless otherwise noted)

Symbol Parameter Conditions Min Typ Max Units


STATIC PARAMETERS
BVDSS Drain-Source Breakdown Voltage ID=-10mA, V GS=0V -40 V
VDS=-32V, VGS=0V -1
IDSS Zero Gate Voltage Drain Current A
TJ=55C -5
IGSS Gate-Body leakage current VDS=0V, VGS=20V 100 nA
VGS(th) Gate Threshold Voltage VDS=VGS ID=-250A -1 -1.9 -3 V
ID(ON) On state drain current VGS=-10V, VDS=-5V -20 A
VGS=-10V, I D=-5A 34.7 45
m
RDS(ON) Static Drain-Source On-Resistance TJ=125C 52 65
VGS=-4.5V, I D=-2A 50.6 63 m
gFS Forward Transconductance VDS=-5V, ID=-4.8A 12 S
VSD Diode Forward Voltage IS=-1A,VGS=0V -0.75 -1 V
IS Maximum Body-Diode Continuous Current -3.2 A
DYNAMIC PARAMETERS
Ciss Input Capacitance 657 pF
Coss Output Capacitance VGS=0V, VDS=-20V, f=1MHz 143 pF
Crss Reverse Transfer Capacitance 63 pF
Rg Gate resistance VGS=0V, VDS=0V, f=1MHz 6.5
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge (10V) 13.6 nC
Qg(4.5V) Total Gate Charge (4.5V) 6.8 nC
VGS=-10V, VDS=-20V, I D=-5A
Qgs Gate Source Charge 1.8 nC
Qgd Gate Drain Charge 3.9 nC
tD(on) Turn-On DelayTime 7.5 ns
tr Turn-On Rise Time VGS=-10V, VDS=-20V, RL=4, 6.7 ns
tD(off) Turn-Off DelayTime RGEN=3 26 ns
tf Turn-Off Fall Time 11.2 ns
trr Body Diode Reverse Recovery Time IF=-5A, dI/dt=100A/s 22.3 ns
Qrr Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/s 15.2 nC

A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The
value in any agiven
givenapplication
applicationdepends
dependson onthe
theuser's
user'sspecific
specificboard
boarddesign.
design.The
Thecurrent
currentrating
ratingisisbased
basedon
onthe
thett10s
10sthermal
thermalresistance
resistancerating.
rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient.
D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80s pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA
curve provides a single pulse rating.
Rev 3 : Sept 2005

THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.

Alpha & Omega Semiconductor, Ltd.


AO4614

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

30 25
-10V -5V VDS=-5V
-4.5V
25
20
-6V -4V
20
15
-ID (A)

-ID(A)
15
-3.5V
10
10 125C

VGS=-3V 25C
5 5

0
0
0 1 2 3 4 5
1 1.5 2 2.5 3 3.5 4 4.5 5
-VDS (Volts)
-VGS(Volts)
Fig 1: On-Region Characteristics
Figure 2: Transfer Characteristics

60 1.8

55 VGS=-10V
Normalized On-Resistance

VGS=-4.5V 1.6
ID=-5A
50
RDS(ON) (m)

1.4
45
VGS=-4.5V
1.2 ID=-4A
40
VGS=-10V
35 1

30 0.8
0 2 4 6 8 10 0 25 50 75 100 125 150 175
-ID (A) Temperature (C)
Figure 3: On-Resistance vs. Drain Current and Gate Figure 4: On-Resistance vs. Junction Temperature
Voltage

160 1.0E+01

140 ID=-5 1.0E+00

120 125C
1.0E-01
RDS(ON) (m)

100 125C
1.0E-02
-IS (A)

80
1.0E-03
60
1.0E-04
40 25C
25C
20 1.0E-05
2 3 4 5 6 7 8 9 10
1.0E-06
-VGS (Volts)
0.0 0.2 0.4 0.6 0.8 1.0
Figure 5: On-Resistance vs. Gate-Source Voltage
-VSD (Volts)
Figure 6: Body-Diode Characteristics

Alpha & Omega Semiconductor, Ltd.


AO4614

TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL

10 1000
VDS=-20V
8 ID=-5A
800
Ciss

Capacitance (pF)
-VGS (Volts)

6 600

4
400
Coss
Crss
2
200

0
0
0 5 10 15
0 10 20 30 40
-Qg (nC)
-VDS (Volts)
Figure 7: Gate-Charge Characteristics
Figure 8: Capacitance Characteristics

100.0
40
TJ(Max)=150C, TA=25C TJ(Max)=150C
TA=25C
RDS(ON) 100s 10s 30
10.0 limited 1ms
Power (W)
-ID (Amps)

10ms
0.1s 20

1.0
1s 10
10s DC
0
0.1
0.001 0.01 0.1 1 10 100 1000
0.1 1 10 100
-VDS (Volts) Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-to-
Figure 9: Maximum Forward Biased Safe
Ambient (Note E)
Operating Area (Note E)

10
D=Ton/T In descending order
TJ,PK=TA+PDM.ZJA.RJA D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
ZJA Normalized Transient

RJA=62.5C/W
Thermal Resistance

PD
0.1
Ton
T
Single Pulse

0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance

Alpha & Omega Semiconductor, Ltd.

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