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Question Bank MW- I (Regarding RTU Exams)

UNIT 1

1. Solve the equations for plane waves in rectangular coordinated for TE & TM mode.
2. Explain power losses and power transmissions in rectangular waveguides.
3. What are different types of microstrip lines? What are their advantages over waveguides?

4. Explain the reasons for


(i) TEM mode not possible in rectangular wave guide.
(ii) Why phase and group velocity are not same in waveguide.

5. A TE11 wave is propagated through a air filled circular waveguide of diameter 10cm. Determine

(i)The cut-off frequency.


(ii) The wavelength g for frequency 3GHz.
(iii) Wave impedance of the guide.
6. A certain microstrip line has following parameters: W=10 mm, h=10 mm, t=2 mm, r = 2.23 Find
characteristics impedance.

UNIT 2

1. Derive the conversion of s-parameters in terms of ABCD, Z and Y parameters.

2. Consider a loss less two port networks


2 2
i) if the network is reciprocal | S21 | = 1- |S11|

ii) if the networks is non-reciprocal, show that it is impossible to have unidirectional


transmission where s21=0 and s12 = 0.

3. Prove that for a reciprocal, lossless, three port network, the all ports cannot be perfectly
matched.

4. The S- parameter of two port network are given by S 11 = 0.2/_0 S22 = 0.1/_0 S12=0.6/_90 S21 -
=0.6/_90.
(a) Prove that the network is reciprocal but not lossless.
(b) Find the return loss at port 1 when port 2 is short circuit.

5. Find the S parameter of the 3 dB attenuator circuit (T shape) with 50 ohm characteristic impedance.
Given : Z1 =Z 2= 8.56ohm , Z 3 =141.8ohm.
6. The scattering parameters of a certain two port network were measured to be S 11= 0.3 + j0.7 , S12=
S21= + j0.6, S22= 0.3 - j0.7. Find the equivalent impedance parameter for this network, if the
characteristic impedance 50.

UNIT 3

1. Explain the construction, working and application of magic tee. Also give its S-matrix

representation.

2. Describe working principle of a two-hole waveguide directional coupler. Also derive its S-

matrix.

3. What will be affected if microstrip lines have open and short ends?

4. Write a short note on:

i) 3-dB branchline coupler

ii) Backward wave coupler

iii) Ring Resonator

iv) Rat-race hybrid ring

v) Shorting Plungar

5. Draw the micro strip line and strip line coupler. Explain their parameters.

6. In an H plane tee junction 20mW power is applied to port 3 that is perfectly matched to the

junction. Calculate power delivered to the load 60 and 75 which are connected at port 1 and

port 2. Assume Z0 = 50 .

7. A 10 mw signal is applied to 20Db directional coupler. Find the power available at the coupled port.

UNIT 4
1. Explain the impedance and VSWR measurement by using the slotted line method? While measuring

the VSWR, what happens when the line is short circuited and open circuited on the load end?

2. Write short notes on

(i) Impedance Measurement

(ii) Network Analyzer


(iii) Spectrum Analyzer

(iv) Noise figure meter

3. Why we now use ordinary diode and transistor in microwave detection and microwave

amplification.

4. Draw the test setup for s-parameters measurement using a complex network analyzer.

5. In a SWR measurement at 10 GHz the distance between the successive minima is 1 cm, inside

dimension of waveguides are 4 cm and 2 cm respectively.TE10 mode is propagating through the

waveguide. Calculate the VSWR.

6. In a calorimeter-wattmeter power measurement system, mass of water taken is 1000 gm and rise

in temperature is 100 degree C. calculate the amount of incident microwave power.

UNIT 5
1. Explain the MMIC fabrication techniques with the help of suitable example.

2. List and draw the various configurations for planar resistors, planar inductors and planar

conductors.

3. List out the steps for MOSFET fabrication with suitable diagrams.

4. Explain the properties of substrate and their selection criterion for MIC application.

5. What is the difference between thin & thick film deposition? Explain the CVD process.

6. Describe

(a) the MMIC techniques

(b) the capacitor film development

c) the inductor film development

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