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FGA40N65SMD 650 V, 40 A Field Stop IGBT
August 2014
FGA40N65SMD
650 V, 40 A Field Stop IGBT
Features General Description
Maximum Junction Temperature : TJ = 175oC Using novel field stop IGBT technology, Fairchilds new series of
Positive Temperature Co-efficient for Easy Parallel Operating field stop 2nd generation IGBTs offer the optimum performance
High Current Capability for solar inverter, UPS, welder, induction heating, telecom, ESS
and PFC applications where low conduction and switching
Low Saturation Voltage: VCE(sat) = 1.9 V(Typ.) @ IC = 40 A
losses are essential.
Fast Switching : EOFF = 6.5 uJ/A
Tighten Parameter Distribution
RoHS Compliant
Applications
Solar Inverter, UPS, Welder, PFC, Induction Heating
Telecom, ESS
TO-3PN
G CE E
Notes:
1: Repetitive rating: Pulse width limited by max. junction temperature
Off Characteristics
BVCES Collector to Emitter Breakdown Voltage VGE = 0 V, IC = 250 A 650 - - V
BVCES Temperature Coefficient of Breakdown
VGE = 0 V, IC = 250 A - 0.6 - V/oC
TJ Voltage
ICES Collector Cut-Off Current VCE = VCES, VGE = 0 V - - 250 A
IGES G-E Leakage Current VGE = VGES, VCE = 0 V - - 400 nA
On Characteristics
VGE(th) G-E Threshold Voltage IC = 250 A, VCE = VGE 3.5 4.5 6.0 V
IC = 40 A, VGE = 15 V - 1.9 2.5 V
VCE(sat) Collector to Emitter Saturation Voltage
IC = 40 A, VGE = 15 V,
- 2.1 - V
TC = 175oC
Dynamic Characteristics
Cies Input Capacitance - 1880 - pF
VCE = 30 V, VGE = 0 V,
Coes Output Capacitance - 180 - pF
f = 1 MHz
Cres Reverse Transfer Capacitance - 50 - pF
Switching Characteristics
td(on) Turn-On Delay Time - 12 16 ns
tr Rise Time - 20 28 ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 40 A, - 92 120 ns
tf Fall Time RG = 6 , VGE = 15 V, - 13 17 ns
Inductive Load, TC = 25oC
Eon Turn-On Switching Loss - 0.82 1.23 mJ
Eoff Turn-Off Switching Loss - 0.26 0.34 mJ
Ets Total Switching Loss - 1.08 1.57 mJ
td(on) Turn-On Delay Time - 15 - ns
tr Rise Time - 22 - ns
td(off) Turn-Off Delay Time VCC = 400 V, IC = 40 A, - 116 - ns
tf Fall Time RG = 6 , VGE = 15 V, - 16 - ns
Inductive Load, TC = 175oC
Eon Turn-On Switching Loss - 1.08 - mJ
Eoff Turn-Off Switching Loss - 0.60 - mJ
Ets Total Switching Loss - 1.68 - mJ
60 60
VGE = 8V VGE = 8V
40 40
20 20
0 0
0 2 4 6 0 2 4 6
Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V]
VGE = 15V
VGE = 15V
100 80A
o
TC = 25 C 2.5
Collector Current, IC [A]
o
TC = 175 C
80
2.0
60
40A
40
1.5
20 IC = 20A
1.0
0 25 50 75 100 125 150 175
0 1 2 3 4 o
Collector-Emitter Voltage, VCE [V] Case Temperature, TC [ C]
Figure 5. Saturation Voltage vs. VGE Figure 6. Saturation Voltage vs. VGE
20 20
Common Emitter Common Emitter
o
Collector-Emitter Voltage, VCE [V]
TC = 25 C TC = 175 C
o
Collector-Emitter Voltage, VCE [V]
16 16
12 12
8 8
40A
80A 80A
4 4
40A
IC = 20A
IC = 20A
0 0
4 8 12 16 20 4 8 12 16 20
Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V]
300V
9
Cies
2000
6
1000 Coes
3
Cres
0 0
0.1 1 10 30 0 40 80 120
Collector-Emitter Voltage, VCE [V] Gate Charge, Qg [nC]
tr
td(off)
Switching Time [ns]
Switching Time [ns]
100
td(on)
10 tf
Common Emitter
10 Common Emitter
VCC = 400V, VGE = 15V
VCC = 400V, VGE = 15V
IC = 40A
IC = 40A
o
TC = 25 C o
TC = 25 C
o
TC = 175 C o
TC = 175 C
1 1
0 10 20 30 40 50 0 10 20 30 40 50
Gate Resistance, RG [] Gate Resistance, RG []
Figure 11. Switching Loss vs. Figure 12. Turn-on Characteristics vs.
Gate Resistance Collector Current
5 1000
Common Emitter
VGE = 15V, RG = 6
o
TC = 25 C
o
Eon TC = 175 C
Switching Loss [mJ]
100 tr
1
Eoff
Common Emitter
VCC = 400V, VGE = 15V 10 td(on)
IC = 40A
o
TC = 25 C
o
TC = 175 C
0.1 1
0 10 20 30 40 50 20 30 40 50 60 70 80
Gate Resistance, RG [] Collector Current, IC [A]
Figure 13. Turn-off Characteristics vs. Figure 14. Switching Loss vs.
Collector Current Collector Current
1000 6
Common Emitter
VGE = 15V, RG = 6
Eon
o
TC = 25 C
td(off) o
TC = 175 C
100
Eoff
1
tf
10 Common Emitter
VGE = 15V, RG = 6
o
TC = 25 C
o
TC = 175 C
1 0.1
20 30 40 50 60 70 80 20 30 40 50 60 70 80
Collector Current, IC [A] Collector Current, IC [A]
Figure 15. Load Current vs. Frequency Figure 16. SOA Characteristics
250 300
Square Wave
o 100 10s
TJ <= 175 C, D = 0.5, VCE = 400V
200 VGE = 15/0V, RG = 6 100s
Collector Current, [A]
10 1 ms
10ms
150 DC
o
TC = 75 C
1
100
o
TC = 100 C *Notes:
0.1 o
50 1. TC = 25 C
o
2. TJ = 175 C
3. Single Pulse
0 0.01
1k 10k 100k 1M 1 10 100 1000
Switching Frequency, f[Hz] Collector-Emitter Voltage, VCE [V]
10 o
TC = 175 C
o
Forward Current, IF [A]
TC = 175 C
8
o
TC = 125 C
TC = 75 C
o 6
di/dt =100A/uS
10 di/dt = 200A/uS
o
TC = 175 C 4
o
TC = 125 C
o 2
TC = 75 C
o
TC = 25 C o
TC = 25 C
1 0
0 1 2 3 4 0 10 20 30 40
Forward Voltage, VF [V] Forward Current, IF [A]
o
250 TC = 175 C 1000 TC = 175 C
o
200 800
150 600
di/dt = 100A/s
di/dt = 200A/s
100 400 di/dt = 100A/s
di/dt = 200A/s
50 200
0 0
0 10 20 30 40 0 10 20 30 40
Forward Current, IF [A] Forwad Current, IF [A]
1
Thermal Response [Zthjc]
0.5
0.1 0.2
0.1
0.05
0.02
0.01 single pulse
0.01 PDM
t1
t2
Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.001
-5 -4 -3 -2 -1 0
10 10 10 10 10 10
Rectangular Pulse Duration [sec]
3
Thermal Response [Zthjc]
1
0.5
0.2
0.1
0.1 0.05
PDM
0.02
t1
0.01 t2
single pulse Duty Factor, D = t1/t2
Peak Tj = Pdm x Zthjc + TC
0.01
1E-5 1E-4 1E-3 0.01 0.1 1
Rectangular Pulse Duration [sec]
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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I71
2011 Fairchild Semiconductor Corporation 9 www.fairchildsemi.com
FGA40N65SMD Rev. C5
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries.
ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductors product/patent
coverage may be accessed at www.onsemi.com/site/pdf/PatentMarking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein.
ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability
arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages.
Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards,
regardless of any support or applications information provided by ON Semiconductor. Typical parameters which may be provided in ON Semiconductor data sheets and/or
specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including Typicals must be validated for each customer
application by customers technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not
designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification
in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized
application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and
expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such
claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This
literature is subject to all applicable copyright laws and is not for resale in any manner.
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FGA40N65SMD