J. Nat. Scien. & Math. Res. Vol. 1 No.

1 (2015) 5-10, 5

Copyright @2015, JNSMR, ISSN: 2460-4453

 J. Nat. Scien. & Math. Res. Vol. 1 No.1 (2015) 5-10, 6
Available online at http://journal.walisongo.ac.id/index.php/jnsmr

Effect of Growth Pressure on Structural Properties of SiC Film Grown on

Insulator by Utilizing Graphene as a Buffer Layer

Budi Astuti1, Shaharin Fadzli Abd Rahman2, Masahiro Tanikawa3,

Mohamad Rusop Mahmood4 , Kanji Yasui3 & Abdul Manaf Hashim5
1
Physics Department, Faculty of Mathematics and Natural Science, Universitas Negeri Semarang, Central
Java,Indonesia
2
Faculty of Electrical Engineering, Universiti Teknologi Malaysia, 81310 Skudai, Johor, Malaysia
3
Department of Electrical Engineering, Nagaoka University of Technology, 1603-1 Kamitomioka-cho, Nagaoka,
Niigata 940-2188, Japan
4
Faculty of Electrical Engineering, Universiti Teknologi MARA, 40450 Shah Alam, Selangor, Malaysia
5
Malaysia-Japan International Institute of Technology, Universiti Teknologi Malaysia, 54100 Kuala Lumpur,
Malaysia

Abstracts
Corresponding author:
b_astuti79@yahoo.com Heteroepitaxial growth of silicon carbide (SiC) on graphene/SiO 2/Si substrates
Recived: 10 May 2015, was carried out using a home-made hot-mesh chemical vapor deposition (HM-
Revised : 28 May 2015 CVD) apparatus. Monomethylsilane (MMS) was used as single source gas while
Accepted: 23 June 2015. hydrogen (H2) as carrier gas. The substrate temperature, tungsten mesh
temperature, H2 flow rate and distance between mesh and substrate were fixed at
750 C, 1700 C, 100 sccm and 30 mm, respectively. The growth pressures were
set to 1.2, 1.8 and 2.4 Torr. The growth of 3C-SiC (111) on graphene/SiO 2/Si were
confirmed by the observation of -2 diffraction peak at 35.68. The diffraction
peak of thin film on graphene/SiO2/Si substrate at pressure growth is 1.8 Torr is
relatively more intense and sharper than thin film grown at pressure growth 1.2
and 2.4 Torr, thus indicates that the quality of grown film at 1.8 Torr is better. The
sharp and strong peak at 33 was observed on the all film grown, that peak was
attributed Si(200) nanocrystal. The reason why Si (200) nanocrystal layer is
formed is not understood. In principle, it cant be denied that the low quality of
the grown thin film is influenced by the capability of our home-made apparatus.
However, we believe that the quality can be further increased by the improvement
of apparatus design. As a conclusion, the growth pressures around 1.8 Torr seems
to be the best pressures for the growth of heteroepitaxial 3C-SiC thin film.

Key words: Silicon carbide, graphene, hot-mesh CVD

Copyright @2015, JNSMR, ISSN: 2460-4453

1. Introduction (20%) and the is also fascinating as it as buffer layer has not
difference in the behaves like a 2D been reported yet. In
Growth of SiC/c- thermal expansion crystal in which this pioneer work, we
Si heteroepitaxial are coefficient (8%) electron tranvel up to reported the effect of
interesting topic on between SiC and Si, it micrometer distance the pressure and
the point of view the is quite likely without scattering. graphene as a buffer
potential application generating a residual This makes it layer for
of SiC material on the stress and a high superior for transport heteroepitaxial
production of density of interface properties and the growth of SiC thin
heterobipolar defects when the material itself is very film.
transistor [1] or processing robust, highly elastic
optoelectronic temperatures are very and chemically inert 2. Experiments
devices [2]. high [4]. However, offering a high Procedure
Hydrogenated several applications potential for
amorphous silicon can benefit from technological Heteroepitaxial
carbide is preferred heteroepitaxial application [10]. SiC films are
to use in many studies system. In order to deposited on poly
in comparison with Heteroepitaxial SiC/c- realize high quality crystalline
monocrystalline Si with optimized SiC thin film on graphene/SiO2/Si
material, since the properties possesses silicon, we have substrates by home-
growth temperature potential application studied the growth of made hot-mesh
is relatively low and such as on switching SiC on Si substrate by chemical vapor
which guarantees a devices [5], sensors using carbonization deposition (hot-mesh
large compatibility [6], detectors [7] and layer to reduce the CVD) technique. Fig. 1
among the fabrication micro-electrical lattice mismatch shows the schematic
processes of the mechanical system between SiC and Si of home-made hot-
silicon carbide layer (MEMS) [8]. interfaces [11]. The mesh CVD apparatus.
with current silicon Graphene is one latter work triggers Schematic of the
technology. In order monolayer of carbon and idea to employ graphene/SiO2/Si(10
to improve the atoms packed into a graphene , a 2D 0) substrate as shown
performance of the two-dimensional (2D) carbon material with in Fig. 2. After the
devices, carrier honeycomb crystal only one atomic-layer tradisional cleaning
mobility should be lattice. The electron in thick, as a buffer layer was applied prior to
enhanced and this is an ideal graphene for epitaxial growth of the growth which
possible with the sheet behaves like SiC thin film on consists of acetone,
crystallization of SiC massless Dirac- insulator substrate. ethanol and deionized
layers. Hence, it is Fermion. Graphene To our knowledge, (DI) water, the
important to grow possesses high carrier growth of the substrate was loaded
heteroepitaxial mobility, up to material on the to the chamber
crystalline SiC on 200,000 cm2/Vs, even insulator substrate is directly. The distance
different substrates. at room temperature not new topic, such as between the tungsten
Growth of the (RT), and this Ge-on-insulator[12], mesh wire (diameter
Single crystalline SiC mobility in turn result graphene-on- of 0.1 mm, 300
films is usually in along mean free insulator[13], GaAs- mesh/in.) and the
realized only at high path of 1.2 m at a on-insulator [14] and substrate was set to
growth temperature carrier concentration SiC-on-insulator [15]. 30 mm.
greater than 1000 C of 2 x 1011 cm-2 [9]. However, the growth Monomethylsilane
[3]. owing to the The physical SiC on insulator by (MMS) gas was used
lattice mismatch structure of graphene introducing graphene as a single source gas
while hydrogen (H2) grapheme grains of In general, the 2D
as a carrier gas with several tens band spectra change
constant flow rate of micrometer in the its shape, width, and
100 sccm. This diameter. The position with the
method utilizes polycrystalline increase of layer
heated tungsten wire graphene grains were number. At the same
arranged in a mesh, grown by CVD time, G band peak
which promotes the technique with the position will also
high decomposition coverage of single change by down
effeicency of H2 gas. layer graphene grains shifting to lower wave
The substrate of 90%. The number due to the
temperature and thickness of the chemical bonding
tungsten mesh graphene grain was between graphene
temperature were also confirmed by layer [17]. The effect
fixed at 750 C and Raman measurement, of graphene thickness
Figure 1. Schematic of
1700 C, respectively. the homemade hot- as showns in Fig. 4. on the shifting of 2D
The growth pressures mesh CVD apparatus. Based on the Fig. 4, and G band can study
were set to 1.2, 1.8 the sharp peak was continue if the
and 2.4 Torr. X-ray clearly observed at graphene substrate
diffraction (XRD) 1580 cm-1 and 2670 was prepared by
spectra were cm-1 is attributed to G using mechanical
measured using an X- and 2D bands, exfoliation technique.
ray diffractometer respectively. The ratio Not only affected to
(RAD IIIA, Rigaku) intensity of the 2D the 2D and G band
over the range of 2 = and G band (I2D/IG) is shift on Raman
20 - 40. Mean about 1.6, hence measurement also
crystalline sizes were indicate that the will affect on the
determined from the graphene is a single image contras of the
full width at half layer [16]. graphene layer.
maximum (FWHM) of Graphene is 2D
XRD peaks using hexagonal network of
Scherrers formula. carbon atoms which
Cross sectional image formed by making
of the SiC film were strong triangular -
Figure 2. Schematic of
observed using field bonds of the sp2
graphene/SiO2/Si(100)
effect scanning substrate (eye bird hybridized orbitals.
electron microscope view) This bonding
(FESEM). Raman structure is similar to
scattering spectra 3. Result and the C plane of
were measured using Discussion hexagonal ctystalline
micro-raman structure and (111)
equipment (Jobin plane zinc-blende
The FESEM
Yvon, Horiba) with structure. With this
image of as received
Ar+ laser 514.5 nm regard, the growth of
graphene/SiO2/Si(10 Figure 3. FESEM image
wavelength. (111) oriented SiC on
0) substrate from as-received
graphene/SiO2/Si(100) graphene in <111>
Graphene
substrate direction is feasible
Laboratories Inc. USA
(Fig. 5).
is shown in Fig. 3. It is
clear that the size of
 300 samples deposited on condition to obtain condition [25].
the the 3C-SiC film on Therefore, it supports
graphene/SiO2/Si(10 insulator by the feasibility of
250 2D
0) substrate at introducing graphene forming 3C-SiC film
various gas pressure. as buffer layer. on graphene since
200 Two diffraction peak According to this both process are
Intensity (a.u.)

G were found in the result, we speculate simply reversed to

150 range from 20 to 40. that the growth of 3C- each other and we
The peaks at 33 is SiC on assume that the same
attributed to graphene/SiO2/Si(10 bonding structures
100 0) substrate has been should be formed.
crystalline Si(200)
peak [18]. Komura et. enhance in (111) The FESEM
50 D
al. [19] was reported domain. In this work, image of 3C-SiC films
the film grown at the grown SiC films grown on insulator
below 1.5 Torr is were also substrate which
0
1000 1500 2000 contained
2500 3000 Si
3500 polycrystalline same graphene as a buffer
-1
Raman nanocrystallites,
Shift(cm ) as the reported SiC layer show the film
Figure 4. Raman where that Si film on SiO2 [22-24] structures with no
spectra of CVD grown nanocrystallite since the void formed at the
graphene grains. embedded polycrystalline single interface between SiC
amorphous SiC (a- layer graphene flake and SiO2. Fig. 6 shows
SiC) film were were used. However, the cross sectional
prepared by HWCVD if the technology to FESEM of the 3C-SiC
using
Si(200)CH4 as a carbon form large area single film on
source [20] and our crystalline grapheme graphene/SiO2/Si(10
result at the low is realized and then, 0) substrate. It is
pressure condition such single crystalline clearly shown that 3C-
Intensity (a.u.)

below 1.5 Torr are
consistent with it. On
SiC (111)
2.4 Torr the other hand, for
films prepared at 1.8
Torr, XRD peaks due
to 3C-SiC(111) were
1.8 Torr observed at 35.68. thin film. It seem to
This mean that 3C-SiC
growth occurred at
1.2 Torr
the pressure 1.8 Torr
20 25 30 and that 35gas pressure
40
2(degree)
is a key parameter for
preparing 3C-SiC film
Figure 5. XRD spectra [21]. For the film
of SiC films grown on prepared at 1.8 Torr,
graphene/SiO2/Si(100) the diffraction peak
substrate at growth intensity is higher
pressure 1.2, 1.8, and
than the film grown at
2.4 Torr.
1.2 and 2.4 Torr. It is
can be assume the
Fig. 5 shows the
growth pressure 1.8
X-ray diffraction
Torr is optimum
(XRD) spectra of the
grapheme structures SiC film can be grown
is applied, it should on the surface of the
lead to the realization insulator which is the
of highly oriented polycrystalline
single crystalline 3C- grapheme as a buffer
SiC (111) continous layer is incorporation
on the SiC film
show that grapheme formation. The
is a promising buffer thickness of the 3C-
layer to grow single SiC film is about 2 m
crystalline material where the film shows
structure on grain like structure
amorphous material. which is the size of
Recently, Takahashi et the grain are similar
al. reported the to the size of
graphitization graphene grain.
process or the
formation of epitaxial
grapheme on the 3C-
SiC (111) surface by
annealing process in
ultrahigh vacuum
 the TO and LO SiC LO
phonon mode peaks This work was
for SiC is indicated partlyG Band
D Band supported
2.4 Torr by
that the grown film is FRGS (4F081), and
polycrystalline with ERGS (4L001) grants
small crystallite size from the Malaysian

Intensity (a.u.)
[27-29]. The shifting Ministry of Higher
of the TO and LO SiC LO Education (MOHE)
peaks is caused by the SiC TO and MJIIT grant
small crystallite size (4J045) from
(quantum Malaysian 1.8 Japan
Torr
confinement effect) a-SiC
International
D Band
G Band Institute
1.2 Torr
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