VSMB11940X01

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Vishay Semiconductors
High Speed Infrared Emitting Diode, 940 nm, GaAlAs, MQW
FEATURES
Package type: surface mount
Package form: side view
Dimensions (L x W x H in mm): 3 x 2 x 0.6
AEC-Q101 qualified
Peak wavelength: p = 940 nm
High reliability
High radiant power
High radiant intensity
High speed
Angle of half intensity: = 75
Low forward voltage
DESCRIPTION
Package matches with detector VEMD11940FX01
VSMB11940X01 is an infrared, 940 nm side looking emitting
diode in GaAlAs multi quantum well (MQW) technology with Floor life: 168 h, MSL 3, according to J-STD-020
high radiant power and high speed, molded in clear, Lead (Pb)-free reflow soldering
untinted plastic package (with lens) for surface mounting Material categorization: for definitions of compliance
(SMD). please see www.vishay.com/doc?99912

APPLICATIONS
IR touch panel
High power emitter for low space applications
High performance transmissive or reflective sensors

PRODUCT SUMMARY
COMPONENT Ie (mW/sr), 20 mA (deg) p (nm) tr (ns)
VSMB11940X01 1 75 940 15
Note
Test conditions see table Basic Characteristics

ORDERING INFORMATION
ORDERING CODE PACKAGING REMARKS PACKAGE FORM
VSMB11940X01 Tape and reel MOQ: 4000 pcs, 4000 pcs/reel side view
Note
MOQ: minimum order quantity

ABSOLUTE MAXIMUM RATINGS (Tamb = 25 C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Reverse voltage VR 5 V
Forward current IF 65 mA
Peak forward current tp/T = 0.5, tp = 100 s IFM 130 mA
Surge forward current tp = 100 s IFSM 500 mA
Power dissipation PV 104 mW
Junction temperature Tj 100 C
Operating temperature range Tamb -40 to +85 C
Storage temperature range Tstg -40 to +100 C
Soldering temperature According to Fig. 9, J-STD-020 Tsd 260 C
Thermal resistance junction / ambient JESD 51 RthJA 580 K/W

Rev. 1.2, 30-Jun-16 1 Document Number: 84193

For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors

120 80

70
PV - Power Dissipation (mW)

100

IF - Forward Current (mA)

60
80
50

60 40

30
40 RthJA = 580 K/W RthJA = 580 K/W
20
20
10

0 0
0 20 40 60 80 100 0 20 40 60 80 100

Tamb - Ambient Temperature (C) Tamb - Ambient Temperature (C)

Fig. 1 - Power Dissipation Limit vs. Ambient Temperature Fig. 2 - Forward Current Limit vs. Ambient Temperature

BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
IF = 20 mA, tp = 20 ms VF 1.1 1.24 1.5 V
Forward voltage IF = 65 mA, tp = 20 ms VF - 1.35 - V
IF = 500 mA, tp = 100 s VF - 1.8 - V
Temperature coefficient of VF IF = 1 mA TKVF - -1.5 - mV/K
Reverse current VR = 5 V IR - - 10 A
VR = 0 V, f = 1 MHz,
Junction capacitance CJ - 21 - pF
E = 0 mW/cm2
IF = 20 mA, tp = 20 ms Ie 0.5 1.0 1.5 mW/sr
Radiant intensity IF = 65 mA, tp = 20 ms Ie - 3.2 - mW/sr
IF = 500 mA, tp = 100 s Ie - 20 - mW/sr
Radiant power IF = 100 mA, tp = 20 ms e - 35 - mW
Temperature coefficient of radiant power IF = 100 mA TKe - -0.47 - %/K
Angle of half intensity - horizontal h - 77.5 - deg
Angle of half intensity - vertical v - 72.5 - deg
Peak wavelength IF = 30 mA p - 940 - nm
Spectral bandwidth IF = 30 mA - 25 - nm
Temperature coefficient of p IF = 30 mA TKp - 0.3 - nm
Rise time IF = 100 mA, 20 % to 80 % tr - 15 - ns
Fall time IF = 100 mA, 20 % to 80 % tf - 15 - ns

Rev. 1.2, 30-Jun-16 2 Document Number: 84193

For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
 VSMB11940X01
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Vishay Semiconductors
BASIC CHARACTERISTICS (Tamb = 25 C, unless otherwise specified)

1000 160

Ie, rel - Relative Radiant Intensity (%)

tp = 100 s
IF = 100 mA
IF - Forward Current (mA)

140

100
120

100
10

80

1 60
1.0 1.2 1.4 1.6 1.8 2.0 - 60 - 40 - 20 0 20 40 60 80 100
VF - Forward Voltage (V) Tamb - Ambient Temperature (C)

Fig. 3 - Forward Current vs. Forward Voltage Fig. 6 - Relative Radiant Intensity vs. Ambient Temperature

110 100
VF, rel - Relative Forward Voltage (%)

e rel - Relative Radiant Power (%)

108 90
106 80 IF = 30 mA

104 70
102 60
IF = 100 mA
100 50
IF = 10 mA
98 40
96 tp = 20 ms 30
94 20
IF = 1 mA
92 10
90 0
- 40 - 20 0 20 40 60 80 100 840 880 920 960 1000 1040
21443 Tamb - Ambient Temperature (C) 21445 - Wavelength (nm)

Fig. 4 - Relative Forward Voltage vs. Ambient Temperature Fig. 7 - Relative Radiant Power vs. Wavelength

0 10 20
100
30
tp = 100 s
Ie - Radiant Intensity (mW/sr)

vertical
Ie, rel - Relative Radiant Intensity

- Angular Displacement
horizontal
10
40
1.0
1
0.9 50

0.8 60
0.1
70
0.7
80
0.01
1 10 100 1000 0.6 0.4 0.2 0

IF - Forward Current (mA)

Fig. 5 - Radiant Intensity vs. Forward Current Fig. 8 - Relative Radiant Intensity vs. Angular Displacement

Rev. 1.2, 30-Jun-16 3 Document Number: 84193

For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
REFLOW SOLDER PROFILE DRYPACK
Devices are packed in moisture barrier bags (MBB) to
prevent the products from moisture absorption during
transportation and storage. Each bag contains a desiccant.
10 s max.

255 C to 260 C FLOOR LIFE

3 C/s max. Time between soldering and removing from MBB must not
217 C
Temperature

200 C exceed the time indicated in J-STD-020:

6 C/s max.
150 C Moisture sensitivity: level 3
3 C/s max. Floor life: 168 h
Conditions: Tamb < 30 C, RH < 60 %
60 s to 120 s
60 s max.
DRYING
22932 Time In case of moisture absorption devices should be baked
before soldering. Conditions see J-STD-020 or label.
Fig. 9 - Lead (Pb)-free Reflow Solder Profile Devices taped on reel dry using recommended conditions
According to J-STD-020 192 h at 40 C (+ 5 C), RH < 5 %.

PACKAGE DIMENSIONS in millimeters

Optical center 2 0.2 Polarity
C Cathode
identification

0.4
0.4
2

3
1.5

1 0.2 A
Anode

1.5
0.6
0.2
Recommended Footprint
0.9
5
2

0.9

Technical drawings
according to DIN
specification.

Drawing- No: 6.550-5327.01-4

Issue: Prel. 26.11.2013 Not indicated tolerances 0.1 mm

Rev. 1.2, 30-Jun-16 4 Document Number: 84193

For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Vishay Semiconductors
TAPING AND REEL DIMENSIONS in millimeters

Reel-design is representative for different types

Unreel direction

Empty trailer 160 mm min.

1 .5
17
8
Co
Em ve
r ta
pty pe
lea 40
de 0m
r1
A 00
mm
m
mi
n.
13 mi
n.

8 .4

Label posted .4
14
here

H - H (5 : 1)
0.23

0.9
Device
Cathode 2 4
1.55
3.5 1.75

A
H H

1 4
Drawing refers to following types: VSMB11940
VEMD11940F
Drawing No. 9.800-5126.01-4; Issue: Prel. 23.05.2013

Rev. 1.2, 30-Jun-16 5 Document Number: 84193

For technical questions, contact: emittertechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
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Revision: 13-Jun-16 1 Document Number: 91000