Reg no:

KONGUNADU COLLEGE OF ENGINEERING AND TECHNOLOGY

NAMAKKAL- TRICHY MAIN ROAD, THOTTIAM
DEPARTMENT OF ELECTRONICS AND COMMUNIATION ENGINEERING EX-05
MODEL EXAMINATION Rev: 0
EC 6701 RF & MICROWAVE ENGINEERING
VII SEMESTER
Date:09.10.2017 Session : AN
Time: 3 hours Max Marks: 100
PART - A (1002=20 MARKS)
Sl.No. Questions Blooms CO
Why it is difficult to measure Z, Y, h and ABCD parameters at microwave
1. U 1
frequencies?
2. Give the relationship between [s] and [z]. R 1
3. What are the need for impedance matching networks? U 2
4. Define transducer power gain and unilateral power gain. R 2
A directional coupler is having coupling factor of 25 dB and directivity of 45 dB.
5. Ap 3
If the incident power is 110 mW, what is the coupled power?
A 25 mW signal is fed into one of collinear port 1 of a lossless H plane T junction.
6. Calculate the power delivered through each port when other ports are terminated in Ap 3
matched load.
7. What is negative resistance in Gunn diode? U 4
A helix travelling wave tube operates at 4 GHz, under a beam voltage of 10 kV
8. and beam current of 500mA. If the helix is 25 and interaction length is 20cm, Ap 4
find the gain parameter.
9. Distinguish between TWT and Klystron. A 5
10. What are the possible errors in VSWR measurement? R 5

PART B(516=80 marks)

Sl.No. Questions Blooms CO
2 + 4 6
(a) (i) Evaluate the S parameters from the Z parameters. [] = [ ] , 50.
4 Ap 1
(8)
11. (ii) Derive the expression for the Scattering matrix of multiport network.(8) A 1
OR
(b) (i) Explain and prove the properties of the S parameter.(8) R 1
(ii) Write in detail about capacitor and inductor. (8) U 1
(a) (i)A microwave amplifier is characterized by its S parameters. Derive equations
A 2
For power gain, available power gain and transducer gain.(10)
(ii) Output impedance of a transmitter operating frequency of 2 GHz is ZT=(150+j50).
Design an L type matching network so that maximum power is delivered to the antenna Ap 2
whose input impedance is ZA=(50+j20)&Z0=50 . (6)
OR
12.
(b) (i) Explain various stabilization methods and also explain stability considerations for
U 2
RF transistor amplifier design. (16)
(ii) Design a T-type matching network that transforms load impedance ZL = (60-j30) ohms
into a Zin= (10+j20) ohms input impedance and that has a maximum nodal quality factor of
Ap 2
3. Compute the values for the matching network components assuming that matching is
required at f = 1GHz. Assume Z0 = 50 ohms.
 (a) (i) Explain the principle of operation of the Magic Tee and obtain their S matrix.
U 3
Discuss about the applications of Magic Tee.(8)
(ii) Explain the types of attenuator and discuss the working principle of precision
U 3
13. type attenuator.(8)
OR
(b) Describe the Gunn effect with the aid of Two valley model theory and explain the
R 3
Gunn diode operation. (16)
(a)(i) A two cavity klystron amplifier has the following parameters:
Beam voltage Vo = 1000v, Beam current Io = 25mA, Frequency f = 3 GHz, Ro = 40 k,
Gap spacing I either cavity d = 1mm, Spacing between the two cavities L = 4cm, Effective Ap 4
shunt impedance, Rsh = 30 k, Calculate input gap voltage, voltage gain and efficiency.
14. (8)
(ii) Explain the working principle of Travelling Wave Tube Amplifier.(8) U 4
OR
(b) Derive the equation of velocity modulated wave and discuss the concept ofbunching
A 4
effect in two cavity klystron.
(a) (i) Explain the measurement of VSWR with the help of neat block diagram.(8) U 5
(ii) Describe the measurement of power at microwave frequencies in detail.(8) U 5
OR
15.
(b) (i) Explain the procedure to measure the impedance of a load at microwave frequency.
U 5
(8)
(ii) Describe how the frequency of a given microwave source can be measured.(8) U 5

CO-Course Outcomes Blooms Taxonomy: A-Analyzing, R-Remembering, U-

Understanding, E-Evaluating, C-Creating ,Ap-Applying

Faculty In-charge HOD