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IPI600N25N3 G
OptiMOSTM3 Power-Transistor
Product Summary
Features
VDS 250 V
N-channel, normal level
RDS(on),max 60 mW
Excellent gate charge x R DS(on) product (FOM)
ID 25 A
Very low on-resistance R DS(on)
T C=100 C 18
1)
J-STD20 and JESD22
2)
See figure 3
Thermal characteristics
Static characteristics
V DS=200 V, V GS=0 V,
Zero gate voltage drain current I DSS - 0.1 1 A
T j=25 C
V DS=200 V, V GS=0 V,
- 10 100
T j=125 C
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm 2 (one layer, 70 m thick) copper area for drain
connection. PCB is vertical in still air.
Dynamic characteristics
Fall time tf - 8 -
Reverse Diode
V GS=0 V, I F=25 A,
Diode forward voltage V SD - 1 1.2 V
T j=25 C
4)
See figure 16 for gate charge parameter definition
160 30
140
120
20
100
Ptot [W]
ID [A]
80
60
10
40
20
0 0
0 50 100 150 200 0 50 100 150 200
TC [C] TC [C]
103
102 1 s
10 s 100
100 s 0.5
ZthJC [K/W]
ID [A]
101
1 ms 0.2
0.1
10 ms 10-1 0.05
0.02
100
DC
0.01
single pulse
10-1 10-2
10-1 100 101 102 103 10-5 10-4 10-3 10-2 10-1 100
VDS [V] tp [s]
60 100
10 V
7V
50
80
4.5 V 5V
5V
40
RDS(on) [mW]
60
7V
10 V
ID [A]
30
40
20 4.5 V
20
10
0 0
0 1 2 3 4 5 0 10 20 30 40 50
VDS [V] ID [A]
40 80
70
30 60
50
gfs [S]
ID [A]
20 40
30
175 C
10 20
10
25 C
0 0
0 2 4 6 8 0 25 50 75
VGS [V] ID [A]
200 4
180
3.5
160
900 A
3
140
90 A
2.5
RDS(on) [mW]
120
VGS(th) [V]
100 2
98%
80
1.5
typ
60
1
40
0.5
20
0 0
-60 -20 20 60 100 140 180 -60 -20 20 60 100 140 180
Tj [C] Tj [C]
104 103
Ciss
103
102
Coss
25 C
C [pF]
IF [A]
102 175 C
101
25C, 98%
Crss
101
175C, 98%
100
0 40 80 120 160 0 0.5 1 1.5 2
VDS [V] VSD [V]
100 10
8
200 V
25 C 125 V
6
VGS [V]
IAS [A]
100 C
10 50 V
125 C
1 0
1 10 100 1000 0 10 20 30
tAV [s] Qgate [nC]
290
V GS
280 Qg
270
VBR(DSS) [V]
260
250
V gs(th)
240
220 Q gs Q gd
-60 -20 20 60 100 140 180
Tj [C]
PG-TO220-3: Outline
PG-TO263-3: Outline
PG-TO262-3: Outline
Published by
Infineon Technologies AG
81726 Munich, Germany
2009 Infineon Technologies AG
All Rights Reserved.
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conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
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including without limitation, warranties of non-infringement of intellectual property rights
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