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MEP 305
Control Engineering Laboratory
MEP205 Page 1
Control Engineering Laboratory
INCANDESCENT LAMP
3. Equipment Specifications-
DIGIAC 1750 Transducer and Instrumentation Trainer.
4mm Connecting Leads.
Digital Multimeter.
4. Observation Table
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Control Engineering Laboratory
700 0.14
Lamp Resistance(ohm)
600 0.12
Lamp Power(mW)
500 0.1
400 0.08
300 0.06
200 0.04
100 0.02
0 0
0 2 4 6 8 10 12
Lamp Voltage(V)
Lamp filament power
Lamp filament resistance
Linear (Lamp filament resistance)
Fig. Variation of lamp voltage with lamp power and lamp resistance.
8. Additional information
Earlier incandescent lamps was used as a source of light, but they consumes a lot of energy and are
gradually replaced by LED lights which are able to produce the light of same frequency regardless the voltage
across it and also uses very low power and have high intensity.
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Control Engineering Laboratory
PHOTOVOLTAIC CELL
The device can be used either as a voltage source or as a current source. To increase the output voltage
cells may be connected in series. Parallel connection allows a greater current to be drawn. When used as
energy source they are called solar cells since the incident light is suns light.
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Control Engineering Laboratory
3. Equipment Specifications-
DIGIAC 1750 Transducer and Instrumentation Trainer.
4mm Connecting Leads.
Digital Multimeter.
4. Observation Table
Photovoltaic Cell
1400 0.5
Short circuit output current(uA)
1200
0.4
1000
800 0.3
600
400 0.2
200
0.1
0
-200 0 2 4 6 8 10 12
0
Lamp Filament Voltage(V)
Fig. Variation of Lamp filament voltage with short circuit output current and open circuit output
voltage.
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Control Engineering Laboratory
7. Additional information
Photovoltaics are best known as a method for generating electric power by using solar cells to convert
energy from the sun into a flow of electrons by the photovoltaic cell.
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Control Engineering Laboratory
PHOTOTRANSISTOR
The device differs from the natural transistor in allowing light to fall onto the base region, focused
there by a lens.
The photodiode supplies base current to the transistor and the transistor multiplies the base current by
its gain. The deice responds to wide range of wavelength varying from infrared to ultra-violet.
When no light falling on the device, there will be a small leakage current flowing due to thermally
generated hole-electron pairs and the output voltage from the circuit will be slightly less than the supply
voltage due to the voltage drop across the load resistor R.
When light falls on base region, leakage current increases with the base connection open circuit, the
current flows via base-emitter junction and is amplified by normal transistor action to given a large charge in
the collector leakage current.
With increased current in load resistor R, output voltage reduces and is dependent on the light falling
on the device
Vout = V - Iceo R
where: V = Supply voltage, Iceo = Collector leakage current, R = Collector load resistance
3. Equipment Specifications-
DIGIAC 1750 Transducer and Instrumentation Trainer.
4mm Connecting Leads.
Digital Multimeter.
MEP205 Page 7
Control Engineering Laboratory
4. Observation Table
Phototransistor Cell
Lamp Filament Voltage(Volts)
Output(Volts)
0 5.0115
1 5.0014
2 4.965
3 4.586
4 3.412
5 1.403
6 0.843
7 0.818
8 0.803
9 0.741
10 0.78
0
0 2 4 6 8 10 12
Lamp filament voltag(Volts)
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Control Engineering Laboratory
8. Additional information
1. Phototransistors produce a higher current than photo diodes.
2. Phototransistors are very fast and are capable of providing nearly instantaneous output.
3. Phototransistors are used in security system, punch card readers, highway lighting control, IR detectors
photo etc.
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Control Engineering Laboratory
A LDR works on the principle of photo conductivity. Photo conductivity is an optical phenomenon in
which the material conductively is increased when light is absorbed by the material. When light fall i.e. when
the photons fall on the device the electrons in the valence band of the semiconductor material are excited to
the conduction band. These photons in the incident light should have energy greater that the band gap of the
semiconductor material to make the electrons jump from the valance band to conduction band. Hence when
light having enough energy strikes on the device more and more electrons are excide to the conduction band
which result in large number of charge carrier. As a result more and more current starts flowing through the
device when the circuit is closed and hence if is said that the resistance of the device has been decreases.
LDRs have low cost and simple structure. They are often used as light sensors.
3. Equipment Specifications-
DIGIAC 1750 Transducer and Instrumentation Trainer.
4mm Connecting Leads.
Digital Multimeter.
MEP205 Page 10
Control Engineering Laboratory
4. Observation Table
0
0 2 4 6 8 10 12
Lamp filament Voltage(V)
Fig. Variation of Lamp filament voltage with Photoconductive Cell output voltage.
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Control Engineering Laboratory
PIN PHOTODIODE
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Control Engineering Laboratory
The main improvement of the introduction of I region is a reduction in the capacitance of the junction
resulting in a faster response time which can be as high as 0.5 ns .
A PIN photodiode obeys the standard diode equation for low frequency signals. At higher frequencies,
the diode looks like an almost perfect (linear) resistor.
3. Equipment Specifications-
DIGIAC 1750 Transducer and Instrumentation Trainer.
4mm Connecting Leads.
Digital Multimeter.
4. Observation Table
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Control Engineering Laboratory
3000
2500
2000
1500
1000
500
0
0 2 4 6 8 10 12
Lamp Filament Voltage(V)
Fig. Variation of Lamp filament voltage with PIN Photodiode output voltage.
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Control Engineering Laboratory
8. Additional information
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