, Unc.

20 STERN AVE. TELEPHONE: (973) 376-2922

SPRINGFIELD, NEW JERSEY 07081 ZN5529 2N5530 2N5533 2N5534 (212)227-6005
U.S.A. FAX: (973) 376-8960

NPN SILICON POWER TRANSISTORS

RADIATION RESISTANT
10 AMPERES
FEATURES
HIGH POWER
RADIATION EXPOSURE LEVEL TO 5x10 nvt
TOTAL NEUTRON FLUX GREATER THAN 10 KEV

APPLICATIONS
POWER AMPLIFIER
RADIATION ENVIRONMENTS
ULTRA HIGH FREQUENCY

T0-*61
'All leads Isolated from case

ARSOLUTE MAXIMUM RATINGS

2N5529 2N5533
2N5530* 2N5534*
VCBO COLLECTOR-BASE VOLTAGE 60V 90V
VCEO COLLECTOR-EMITTER VOLTAGE 40V 75V
VEBO EMITTER-BASE VOLTAGE 3V 3V

'c CONTINUOUS COLLECTOR CURRENT 10 A 10 A

IB CONTINUOUS BASE CURRENT 4A 4A

OPERATING JUNCTION TEMPERATURE -65C I

STORAGE TEMPERATURE -65 e Cto +200C.
THERMAL RESISTANCE, JUNCTION TO CASE 5C/W
PD POWER DISSIPATION (25C) 35 W

NJ Semi-Conductors reserves the right to change test conditions, parameters limits and package dimensions without
notice information furnished by NJ Semi-Conductors is believed to be both accurate and reliable at the time of going to
press. However NJ Semi-Conductors assumes no responsibility for any errors or omissions discovered in its use. NJ
Semi-Conductors encourages customers to verify that datasheets are current before placing orders.

Quality Semi-Conductors
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 2N5529 2N5530 2N5533 2N5534
ELECTRICAL CHARACTERISTICS ( TC = 25C UNLESS OTHERWISE NOTED)
CHARACTERISTICS SYMBOL MIN. MAX. UNITS
COLLECTOR EMITTER SUSTAINING VOLTAGE VCEO(SUS)
(! c =50mA) 2N5529. 2N5530 40 V
2NS533, 2N5534 75 V
(IC= 50 mA, NOTE 2) 2N5529, 2145530 40 V
2N5533.2N5534 75 V

COLLECTOR-CUTOFF CURRENT 'CEX

(VCE - 3ov, vBE - o, TC - iooec) 1.0 mA
COLLECTOR-CUTOFF CURRENT 'CBO
(VCB- RATED) 1.0 mA
(VCB= RATED, NOTE 2) 1.0 mA

COLLECTOR-CUTOFF CURRENT !CBO

(VCB= 30V) 0.1 mA

(VCB - 30V, NOTE 2) 1.0 mA

COLLECTOR-CUTOFF CURRENT 'CEO

(VCE= RATED) 50 mA
EMITTER CUTOFF CURRENT 'EBO
(VEB = 3.0V) 1.0 mA
(VEB - 3.0V, NOTE 2) 1.0 mA

EMITTER FLOATING POTENTIAL VEBF

(VCB - RATED. IE = o> 1.0 V
DC CURRENT GAIN'1' "FE
(VcE 5.0V, IG = 0.5A) 2N5529, 2N5530 40 300
(VCE s.ov, IG = O.SAJ 2N5533, 2NS534 25 300
(VCE S.OV, IQ = 3.0A) 2N5529, 2NS530 40 200
(VCE S.OV, 1C - 3-OA) 2N5533, 2N5534 30 150
(VcE S.OV, Ic = 5.0A) 2N5529, 2N5530 25
(VCE S.OV, IG = 5.0A) 2N5533, 2N5534 20
(VCE 2.0V, Ic - 10A) 2.5
(VCE 5 V. 'C - 3.0A NOTE 2) 2N5529, 2N5530 15
(VcE 5.0V, IC - 3.0ANOTE2) 2N5533, 2N5534 7.0

COLLECTOR-EMITTER SATURATION VOLTAGE<1> vce(sal)

(IC = 3.0A, IB - 0.3A) 2N5529, 2N5530 1.25 V

(IC - 0.5A. IB = 4.0A) 2N5533, 2N5534 1.25 V
(lc _ IDA, IB - 4.0A) 2.0 V
(IC = 3.0A, IB = 0.3A, NOTE 2) 2N5529, 2NSS30 2.0 V
(IC = 3.0A, IB = 0.5A, NOTE 2) 2N5533, 2N5534 3.0 V

BASE-EMITTER SATURATION VOLTAGE!" vBE(sat)

(IC - 3.0A, IB = 0.3A) 2N5529, 2N5530 1.5 V
(IC - 3.0A, IB = 0.5A) 2N5533, 2N5534 1.5 V

BASE-EMITTER VOLTAGE VBE

(VCE = S.OV, IC = 3.0A) 1.5 V
(VcE - S.OV, Ic = 5.0A) 3.0 V

MAGNITUDE OF SMALL SIGNAL GAIN Ihtal

(VcE = 28V, Ic - 0.5A, 1 = 25 MHz) 8.0
SMALL SIGNAL GAIN hle
(VCE " S.OV, Ic = 3.0A, f - 1 .0 KHz) 2N5529, 2N5530 20
2N5533, 2N5S34 15

OUTPUT CAPACITANCE cobo

(VCB = 30V, f = 1 .0 MHz) 75 PF

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