OMMIC GaN Process

OMMIC
Innovating with III-Vs
GaN/Si MMIC process

for mmW applications
Marc Rocchi
02/04/2015
1
OMMIC CONFIDENTIAL 2015
OMMIC
OMMIC profile and strategy

100nm GaN MMIC processes
Design kit and Foundry service
Conclusions
02/04/2015
2
OMMIC
Founded by Philips Semiconductors
OMMIC, Paris, France
OMMIC : French & independent III/V MMIC foundry

02/04/2015
3
OMMIC
Strategy
Offer High added value , Unique III/V MMIC solutions to
complement Si solutions up to 400GHz for the following
professional markets :
Aviation
Cellular Infrastructure
Space
Defence
Security
Automotive
Optical fiber
Instrumentation
Radio astronomy
Offer foundry services based on long term partnership
02/04/2015
4
OMMIC
Value chain and FAB+ services

Substrate End
Epitaxy IC Fab Back-End System
Supply User
Epitaxial growth
Process development
Custom MMIC design
Foundry service and MPW
MMIC Production
Packaging
Modules with MC2
HiRel Test & Qualification
02/04/2015
5
OMMIC
Process Roadmaps
40
35
D01GH
30
GaN HEMT/Si( C )
Vbgd ( V)
25
20 D006GH
15 D004GH
P(M)HEMT/GaAs
10
D01PH
5 D01MH
Silicon D007IH
D004IH ft (GHz)
0
20 50 100 200 500
02/04/2015
6
OMMIC
D01GH
100nm GaN/Si process

For mmW MMICs
02/04/2015
7
OMMIC
GaN processes and applications

Power electronics :
Replacement of SI solutions Si to improve the DC efficiency
of DC power converters
Switching Transistors
Schottky Diodes
RF Transistors and MMICs

0.5m and 0.25m HEMTs to replace high power LDMOS ( > 100W)
100nm et 60nm GaN HEMTs to replace GaAs PHEMTs thanks to
higher breakdown voltage and even better NF and gain :
02/04/2015
8
OMMIC
Power density/process
D01GH
4.0 100nm
Power Density (W/mm)
GaN
D025PHS D006GH
250 nm 60 nm
1.0 GaN
D01PH
DH15IB
135 nm/ DH05IB
1.5m
0.5 ED02AH
100nm
D-HBT 0.5m
D01MH D-HBT
180 nm
120 nm
E/D
Ft (h21 cutoff), GHz
50 100 150 200 250 300

02/04/2015
9
OMMIC
D01GH : MMIC PROCESS FLOW
pad FET metal R R C ox C via

airbridge
AlGaN/GaN/Si
02/04/2015
10
OMMIC
D01GH : I/V curves
Gm max = 650 mS/mm; Ron =0,8 ohms *mm

Lg = 100 nm
900
Vgs = +0.2 V
800
700
0V
600
Id (mA/mm)
- 0.2 V
500
- 0.4 V
400
- 0.6 V
300 - 0.8 V
- 1.0 V
200 - 1.2 V
- 1.4V
100
- 1.6 V
0 - 1.8 V
0 5 10 15 20 25 30
Vds (V)
02/04/2015
11
OMMIC
Pulsed IV curves
Pulsed I-V : 1s pulses, FET 2x20 m, Lg = 100 nm
1200
Vgs = +0.6 V
Vgsr 0V Vgdr 0V
1000 Vgsr -2V Vdsr 0V
Vgsr -2V Vdsr 5V
Vgsr -2V Vdsr 10V
800
Ids (mA/mm)
Vgs = 0 V
600
400
Vgs = -0.6 V
200
0
0 2 4 6 8 10 12 14 16 18 20
Vds (V)
02/04/2015
12
OMMIC
D01GH_trans 4x50m _Vds 12V 13
Vds=12V Vgs sweep: -2 to -0,5V by step: 0,25V
02/04/2015
13
OMMIC
D01GH_trans 4x50m _Vds 5V 14
Vds=5V Vgs sweep: -1,5 to -0,25V by step 0,25V
02/04/2015
14
OMMIC
Loadpull results at 24GHz
2*50m
12V
3.5W/mm
17dB gain
24GHz
46%PAE
CW
02/04/2015
15
OMMIC
D01GH mini power bars at 30GHz

OutPut Power vs Size @ 30GHz
8x50m 8x70m 8x100m
33.2 4500
G-G 25m
33 4000
P o u t ( m W /m m )
3500
32.8
P o u t (d B m )
G-G 35m 3000

32.6
2500
32.4
2000
32.2
1500
32 1000
G-G 16m
31.8 500
G-G 30m
31.6 0
0 0.2 0.4 0.6 0.8 1
Size (m m )
Pout (dBm) Pout (mW/mm)
02/04/2015
16
OMMIC
Measured NF min and associated gain
4*50m , 40GHz , 5V, 42mA, NF =1, 54 dB, 8dB Asssociated gain

Evolution de Gdisp
Evolution de NFMIN
25
1,8
1,6
20
1,4
1,2
15
G d i sp (d B )
N F M IN (d B )
1 Vd=5V,Vg=-1.2V , Vd=5V,Vg=-1V , ID=356mA/mm

ID=211mA/mm Vd=5V,Vg=-1.2V , ID=211mA/mm
0,8
10 Vd=7.5V,Vg=-1.2V , ID=288mA/mm
0,6
0,4 5
0,2
0 0
0 5 10 15 20 25 30 35 40 0 5 10 15 20 25 30 35 40
Freq(GHz) Freq(GHz)
02/04/2015
17
OMMIC
Measured NF min and associated gain at 40GHz

4*50m D01PH D01GH D01MH
( 135nm ( 100nm ( 120nm
GaAs PHEMT) GaN/Si HEMT) GaAs MHEMT)
Vds ( Volt) 3V 5V 1V
Ids( mA) 15 42 30mA
Rs( Ohm) 1,0 1,2 0,8
Rg( Ohm) 0,65 0,70 0,7
NFmin 1.72 dB 1.54 dB 1,13 dB
Associated gain 4.5 dB 8 dB 12,4dB
02/04/2015
18
OMMIC
DC Step stress results
IG( Vgs) ID( Vgs) Vth

250C, 270C, 280C, 1000h ( no drift after burn-in)
02/04/2015
19
OMMIC
D01GH :specifications and RF performances
Idss ( 0V) = 650 mA/mm

Vt= - 1.6VGm max ext= 650 mS/mm
Ft= 115 GHz, Fmax =155 GHz @ up to Vds = 12 V
MSG( 2*50m) = 14 dB @ 30 GHz
Vbgd min =30V, typical = 40V ( Vds max= 25V)
Vdd =12V
Psat> 3.5 W/mm at 24 GHz ( Vds =12V)
NFmin ( 30GHz) : 1.3 dB
02/04/2015
20
OMMIC
D01GH design kit
02/04/2015
21
OMMIC
Conclusions
End of 2014, project,,OMMIC opened its GaN/Si
foundry service based on the 100nm D01GH process up
to 50GHz
Customer foundry runs:

May 2015
June 2015
September 2015
This process is a full replacement of D01PH
02/04/2015
22

OMMIC GaN Process

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OMMIC GaN Process

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OMMIC

Innovating with III-Vs

GaN/Si MMIC process

OMMIC profile and strategy

Founded by Philips Semiconductors

OMMIC, Paris, France

OMMIC : French & independent III/V MMIC foundry

Offer foundry services based on long term partnership

Value chain and FAB+ services

100nm GaN/Si process

GaN processes and applications

RF Transistors and MMICs

50 100 150 200 250 300

D01GH : MMIC PROCESS FLOW

pad FET metal R R C ox C via

D01GH : I/V curves

Gm max = 650 mS/mm; Ron =0,8 ohms *mm

Pulsed I-V : 1s pulses, FET 2x20 m, Lg = 100 nm

D01GH_trans 4x50m _Vds 12V 13

Vds=12V Vgs sweep: -2 to -0,5V by step: 0,25V

D01GH_trans 4x50m _Vds 5V 14

Vds=5V Vgs sweep: -1,5 to -0,25V by step 0,25V

Loadpull results at 24GHz

D01GH mini power bars at 30GHz

G-G 35m 3000

Pout (dBm) Pout (mW/mm)

Measured NF min and associated gain

4*50m , 40GHz , 5V, 42mA, NF =1, 54 dB, 8dB Asssociated gain

1 Vd=5V,Vg=-1.2V , Vd=5V,Vg=-1V , ID=356mA/mm

Measured NF min and associated gain at 40GHz

Rg( Ohm) 0,65 0,70 0,7

NFmin 1.72 dB 1.54 dB 1,13 dB

Associated gain 4.5 dB 8 dB 12,4dB

DC Step stress results

IG( Vgs) ID( Vgs) Vth

D01GH :specifications and RF performances

Idss ( 0V) = 650 mA/mm

D01GH design kit

Customer foundry runs:

This process is a full replacement of D01PH

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