ELTN 3262 POWER ELECTRONICS

IGBT Applications
IGBT Lamp Switch
132047
11-Oct-16
Introduction
An IGBT or Insulated Gate Bipolar Transistor is a device that has combined the
characteristics of BJT as the output but voltage controlled like a MOSFET. Thus it makes an
excellent choice for high voltage switching applications.

Figure 1: A Typical IGBT

The IGBT has three terminals; gate, collector, and emitter. The figure 1 shows a typical IGBT
and the schematic symbol is given in figure 2.

Figure 2: Schematic Symbol of an IGBT

The IGBT has MOSFET input characteristics and BJT output characteristics. BJTs are capable
of higher currents than FETs, but MOSFETs have no gate current because of the insulated
gate structure. IGBTs exhibit a lower saturation voltage than MOSFETs and have about the
same saturation voltage as BJTs.

IGBTs are superior to MOSFETs in some applications because they can handle high collector-
to-emitter voltages exceeding 200 V and exhibit less saturation voltage when they are in the
ON state.

IGBTs are superior to BJTs in some applications because they can switch faster. In terms of
switching speed, MOSFETs switch fastest, then IGBTs, followed by BJTs, which are slowest.
Operation

Figure 3: IGBT Characteristics

Because the IGBT is a voltage-controlled device, it only requires a small voltage on the Gate
to maintain conduction through the device unlike BJTs which require that the Base current
is continuously supplied in a sufficient enough quantity to maintain saturation.

Advantages
One of the main advantages of the IGBT transistor is the simplicity by which it can be driven
ON by applying a positive gate voltage, or switched OFF by making the gate signal zero or
slightly negative allowing it to be used in a variety of switching applications. It can also be
driven in its linear active region for use in power amplifiers.

With its lower on-state resistance and conduction losses as well as its ability to switch high
voltages at high frequencies without damage makes the Insulated Gate Bipolar
Transistor ideal for driving inductive loads such as coil windings, electromagnets and DC
motors.

Application Example

Figure 4: Driving a load by an IGBT

The LDR serves as a resistor to the voltage divider by which the Gate-Emitter voltage is
maintained. When the light to the LDR is reduced, its resistance increases and a Gate-Emitter
voltage is developed.

Once it exceeds the Gate-Emitter Threshold voltage the IGBT is turned ON. The Gate-Emitter
Threshold voltage is unique to the component and is readily available in the manufacturer
datasheet.

Figure 5: Electrical Specifications of a typical IGBT