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1410A
IRFP044N
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating D
VDSS = 55V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.020Ω
l Fully Avalanche Rated
G
ID = 53A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.
Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.3
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40
8/25/97
IRFP044N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.017 ––– V/°C Reference to 25°C, I D = 1mA
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.020 Ω VGS = 10V, ID = 29A
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS , ID = 250µA
gfs Forward Transconductance 16 ––– ––– S VDS = 25V, I D = 28A
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V
I GSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 61 ID = 28A
Q gs Gate-to-Source Charge ––– ––– 13 nC VDS = 44V
Q gd Gate-to-Drain ("Miller") Charge ––– ––– 24 V GS = 10V, See Fig. 6 and 13
t d(on) Turn-On Delay Time ––– 12 ––– VDD = 28V
tr Rise Time ––– 80 ––– I D = 28A
ns
t d(off) Turn-Off Delay Time ––– 43 ––– RG = 12Ω
tf Fall Time ––– 52 ––– RD = 0.98Ω, See Fig. 10
Between lead, D
LD Internal Drain Inductance ––– 5.0 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 13 –––
and center of die contact S
––– ––– 53
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– 180
(Body Diode) p-n junction diode. S
VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V
t rr Reverse Recovery Time ––– 72 110 ns TJ = 25°C, IF = 28A
Q rr Reverse Recovery Charge ––– 210 310 µC di/dt = -100A/µs
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
VDD = 25V, starting TJ = 25°C, L = 410µH
Uses IRFZ46N data and test conditions
RG = 25Ω, IAS = 28A. (See Figure 12)
ISD ≤ 28A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
IRFP044N
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
I , D ra in -to -S o u rc e C u rre n t (A )
10 10
4 .5V
4.5 V
D
D
2 0µ s PU LSE W ID TH 20 µs P UL SE W IDTH
TC = 2 5°C TC = 17 5°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ource V oltage (V ) V D S , Drain-to-Source V oltage (V)
1000 2.5
I D = 46 A
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
I D , D rain -to- S ou rce C ur ren t (A )
2.0
TJ = 2 5 ° C
100
(N o rm a li ze d )
TJ = 1 7 5 ° C 1.5
1.0
10
0.5
V DS = 2 5 V
2 0 µ s P U L SE W ID TH V G S = 10 V
1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180
C is s
C , C a p a c ita n c e (p F )
2000
12
1600
C os s
1200
8
800
C rs s 4
400
FO R TEST C IRC U IT
SEE FIG UR E 13
0 A 0 A
1 10 100 0 10 20 30 40 50 60
1000 1000
O P ER A TION IN TH IS A R EA L IM ITE D
B Y R D S (o n)
I S D , R everse D rain C urrent (A )
I D , D rain Current (A )
100 100 10 µs
T J = 1 75 °C
10 0µ s
T J = 25 °C
10 10
1m s
10 m s
T C = 25 °C
T J = 17 5 °C
VG S = 0 V S in g le Pu lse
1 A 1 A
0.4 0.8 1.2 1.6 2.0 2.4 1 10 100
40 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
0
25 50 75 100 125 150 175
10%
T C , Case Temperature ( °C) VGS
td(on) tr t d(off) tf
Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature
10
Thermal Response (Z thJC )
1
D = 0.50
0.20
0.10 PDM
0.1 0.05
t1
0.02 SINGLE PULSE
0.01 t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)
L
VDS 500
ID
E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
D.U.T. TO P 1 1A
20A
RG + BO TTOM 28 A
400
V
- DD
10 V IAS
300
tp
0.01Ω
V(BR)DSS
100
tp
VDD
V D D = 2 5V
0 A
25 50 75 100 125 150 175
VDS Starting TJ , Junction T emperature (°C)
Current Regulator
Same Type as D.U.T.
50KΩ
12V .2µF
QG .3µF
10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA
IG ID
Charge Current Sampling Resistors
Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
IRFP044N
+
- +
-
RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test
VGS=10V *
Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD
Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent
Ripple ≤ 5% ISD
2 0 .3 0 (.80 0 )
5. 50 (.2 17 ) NOT ES :
1 9 .7 0 (.77 5 ) 2X
4. 50 (.1 77 ) 1 DIME NSIO NING & TO LERAN CING
PE R AN SI Y 14.5M, 1982.
1 2 3 2 CO NTRO LLING DIMENS IO N : IN CH .
3 CO NF ORM S T O JEDE C O UTLINE
-C - T O-247-A C.
1 4.8 0 (.5 8 3 )
4 .3 0 (.1 7 0 )
1 4.2 0 (.5 5 9 )
3 .7 0 (.1 4 5 )
WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, Tel: (310) 322 3331
EUROPEAN HEADQUARTERS: Hurst Green, Oxted, Surrey RH8 9BB, UK Tel: ++ 44 1883 732020
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IR ITALY: Via Liguria 49, 10071 Borgaro, Torino Tel: ++ 39 11 451 0111
IR FAR EAST: K&H Bldg., 2F, 30-4 Nishi-Ikebukuro 3-Chome, Toshima-Ku, Tokyo Japan 171 Tel: 81 3 3983 0086
IR SOUTHEAST ASIA: 315 Outram Road, #10-02 Tan Boon Liat Building, Singapore 0316 Tel: 65 221 8371
http://www.irf.com/ Data and specifications subject to change without notice. 8/97