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PD - 9.

1410A

IRFP044N
HEXFET® Power MOSFET
l Advanced Process Technology
l Dynamic dv/dt Rating D
VDSS = 55V
l 175°C Operating Temperature
l Fast Switching
RDS(on) = 0.020Ω
l Fully Avalanche Rated
G
ID = 53A
S
Description
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
and reliable device for use in a wide variety of applications.

The TO-247 package is preferred for commercial-industrial


applications where higher power levels preclude the use of
TO-220 devices. The TO-247 is similar but superior to the TO-247AC
earlier TO-218 package because of its isolated mounting
hole.

Absolute Maximum Ratings


Parameter Max. Units
ID @ TC = 25°C Continuous Drain Current, VGS @ 10V 53
ID @ TC = 100°C Continuous Drain Current, VGS @ 10V 37 A
IDM Pulsed Drain Current … 180
PD @TC = 25°C Power Dissipation 120 W
Linear Derating Factor 0.77 W/°C
VGS Gate-to-Source Voltage ± 20 V
EAS Single Pulse Avalanche Energy‚… 230 mJ
IAR Avalanche Current 28 A
EAR Repetitive Avalanche Energy 12 mJ
dv/dt Peak Diode Recovery dv/dt ƒ… 5.0 V/ns
TJ Operating Junction and -55 to + 175
TSTG Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case )
Mounting torque, 6-32 or M3 screw 10 lbf•in (1.1N•m)

Thermal Resistance
Parameter Typ. Max. Units
RθJC Junction-to-Case ––– 1.3
RθCS Case-to-Sink, Flat, Greased Surface 0.24 ––– °C/W
RθJA Junction-to-Ambient ––– 40

8/25/97
IRFP044N
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 55 ––– ––– V VGS = 0V, ID = 250µA
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient ––– 0.017 ––– V/°C Reference to 25°C, I D = 1mA…
RDS(on) Static Drain-to-Source On-Resistance ––– ––– 0.020 Ω VGS = 10V, ID = 29A „
VGS(th) Gate Threshold Voltage 2.0 ––– 4.0 V VDS = VGS , ID = 250µA
gfs Forward Transconductance 16 ––– ––– S VDS = 25V, I D = 28A…
––– ––– 25 VDS = 55V, VGS = 0V
IDSS Drain-to-Source Leakage Current µA
––– ––– 250 VDS = 44V, VGS = 0V, TJ = 150°C
Gate-to-Source Forward Leakage ––– ––– 100 V GS = 20V
I GSS nA
Gate-to-Source Reverse Leakage ––– ––– -100 VGS = -20V
Qg Total Gate Charge ––– ––– 61 ID = 28A
Q gs Gate-to-Source Charge ––– ––– 13 nC VDS = 44V
Q gd Gate-to-Drain ("Miller") Charge ––– ––– 24 V GS = 10V, See Fig. 6 and 13 „…
t d(on) Turn-On Delay Time ––– 12 ––– VDD = 28V
tr Rise Time ––– 80 ––– I D = 28A
ns
t d(off) Turn-Off Delay Time ––– 43 ––– RG = 12Ω
tf Fall Time ––– 52 ––– RD = 0.98Ω, See Fig. 10 „…
Between lead, D
LD Internal Drain Inductance ––– 5.0 –––
6mm (0.25in.)
nH G
from package
LS Internal Source Inductance ––– 13 –––
and center of die contact S

Ciss Input Capacitance ––– 1500 ––– VGS = 0V


Coss Output Capacitance ––– 450 ––– pF VDS = 25V
Crss Reverse Transfer Capacitance ––– 160 ––– ƒ = 1.0MHz, See Fig. 5…

Source-Drain Ratings and Characteristics


Parameter Min. Typ. Max. Units Conditions
IS Continuous Source Current MOSFET symbol D

––– ––– 53
(Body Diode) showing the
A
ISM Pulsed Source Current integral reverse G
––– ––– 180
(Body Diode)  p-n junction diode. S

VSD Diode Forward Voltage ––– ––– 1.3 V TJ = 25°C, IS = 29A, VGS = 0V „
t rr Reverse Recovery Time ––– 72 110 ns TJ = 25°C, IF = 28A
Q rr Reverse Recovery Charge ––– 210 310 µC di/dt = -100A/µs „…
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)

Notes:
 Repetitive rating; pulse width limited by „ Pulse width ≤ 300µs; duty cycle ≤ 2%.
max. junction temperature. ( See fig. 11 )
‚ VDD = 25V, starting TJ = 25°C, L = 410µH … Uses IRFZ46N data and test conditions
RG = 25Ω, IAS = 28A. (See Figure 12)
ƒ ISD ≤ 28A, di/dt ≤ 240A/µs, VDD ≤ V(BR)DSS,
TJ ≤ 175°C
IRFP044N
1000 1000
VGS VGS
TOP 15V TOP 15V
10V 10V
8.0V 8.0V
7.0V 7.0V
I , D ra in -to -S o u rc e C u rre n t (A )

I , D ra in -to -S o u rce C u rre n t (A )


6.0V 6.0V
5.5V 5.5V
5.0V 5.0V
BOTT OM 4.5V BOTT OM 4.5V
100 100

10 10
4 .5V

4.5 V
D

D
2 0µ s PU LSE W ID TH 20 µs P UL SE W IDTH
TC = 2 5°C TC = 17 5°C
1 A 1 A
0.1 1 10 100 0.1 1 10 100
V D S , D rain-to-S ource V oltage (V ) V D S , Drain-to-Source V oltage (V)

Fig 1. Typical Output Characteristics Fig 2. Typical Output Characteristics

1000 2.5
I D = 46 A
R D S (o n ) , D ra in -to -S o u rc e O n R e si sta n ce
I D , D rain -to- S ou rce C ur ren t (A )

2.0

TJ = 2 5 ° C
100
(N o rm a li ze d )

TJ = 1 7 5 ° C 1.5

1.0
10

0.5

V DS = 2 5 V
2 0 µ s P U L SE W ID TH V G S = 10 V
1 0.0 A
A
4 5 6 7 8 9 10 -60 -40 -20 0 20 40 60 80 100 120 140 160 180

V G S , Ga te-to-S o urce V oltage (V ) T J , Junction T emperature (°C)

Fig 3. Typical Transfer Characteristics Fig 4. Normalized On-Resistance


Vs. Temperature
IRFP044N
2800 20
V GS = 0 V, f = 1M H z I D = 28 A
C is s = C gs + C gd , Cds SH O RTE D V D S = 44 V

V G S , G a te -to -S o u rce V o lta g e (V )


2400 C rs s = C gd V D S = 28 V
C o ss = C ds + C g d 16

C is s
C , C a p a c ita n c e (p F )

2000

12
1600

C os s
1200
8

800

C rs s 4
400
FO R TEST C IRC U IT
SEE FIG UR E 13
0 A 0 A
1 10 100 0 10 20 30 40 50 60

V D S , Drain-to-Source V oltage (V) Q G , T otal G ate Charge (nC)

Fig 5. Typical Capacitance Vs. Fig 6. Typical Gate Charge Vs.


Drain-to-Source Voltage Gate-to-Source Voltage

1000 1000
O P ER A TION IN TH IS A R EA L IM ITE D
B Y R D S (o n)
I S D , R everse D rain C urrent (A )

I D , D rain Current (A )

100 100 10 µs

T J = 1 75 °C
10 0µ s
T J = 25 °C

10 10
1m s

10 m s
T C = 25 °C
T J = 17 5 °C
VG S = 0 V S in g le Pu lse
1 A 1 A
0.4 0.8 1.2 1.6 2.0 2.4 1 10 100

V S D , S ource-to-D rain Voltage (V ) V D S , D rain-to-Source V oltage (V )

Fig 7. Typical Source-Drain Diode Fig 8. Maximum Safe Operating Area


Forward Voltage
IRFP044N
RD
VDS
60
VGS
D.U.T.
RG
50 +
-VDD
I D , Drain Current (A)

40 10V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %

30

Fig 10a. Switching Time Test Circuit


20
VDS
90%
10

0
25 50 75 100 125 150 175
10%
T C , Case Temperature ( °C) VGS
td(on) tr t d(off) tf

Fig 9. Maximum Drain Current Vs. Fig 10b. Switching Time Waveforms
Case Temperature

10
Thermal Response (Z thJC )

1
D = 0.50

0.20

0.10 PDM
0.1 0.05
t1
0.02 SINGLE PULSE
0.01 t2
(THERMAL RESPONSE)
Notes:
1. Duty factor D = t1 / t 2
2. Peak T J = P DM x Z thJC + T C
0.01
0.00001 0.0001 0.001 0.01 0.1 1
t1 , Rectangular Pulse Duration (sec)

Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case


IRFP044N

L
VDS 500
ID

E A S , S in g le P u ls e A va la n c h e E n e rg y (m J)
D.U.T. TO P 1 1A
20A
RG + BO TTOM 28 A
400
V
- DD

10 V IAS
300
tp
0.01Ω

Fig 12a. Unclamped Inductive Test Circuit 200

V(BR)DSS
100
tp
VDD
V D D = 2 5V
0 A
25 50 75 100 125 150 175
VDS Starting TJ , Junction T emperature (°C)

Fig 12c. Maximum Avalanche Energy


IAS Vs. Drain Current
Fig 12b. Unclamped Inductive Waveforms

Current Regulator
Same Type as D.U.T.

50KΩ

12V .2µF
QG .3µF

10 V +
V
D.U.T. - DS
QGS QGD
VGS
VG 3mA

IG ID
Charge Current Sampling Resistors

Fig 13a. Basic Gate Charge Waveform Fig 13b. Gate Charge Test Circuit
IRFP044N

Peak Diode Recovery dv/dt Test Circuit

+ Circuit Layout Considerations


D.U.T
• Low Stray Inductance
• Ground Plane
ƒ
• Low Leakage Inductance
Current Transformer
-

+
‚
„
- +
-


RG • dv/dt controlled by RG +
• Driver same type as D.U.T. VDD
-
• ISD controlled by Duty Factor "D"
• D.U.T. - Device Under Test

Driver Gate Drive


P.W.
Period D=
P.W. Period

VGS=10V *

D.U.T. ISD Waveform

Reverse
Recovery Body Diode Forward
Current Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
VDD

Re-Applied
Voltage Body Diode Forward Drop
Inductor Curent

Ripple ≤ 5% ISD

* VGS = 5V for Logic Level Devices

Fig 14. For N-Channel HEXFETS


IRFP044N
Package Outline
TO-247AC Outline
Dimensions are shown in millimeters (inches)
3 .6 5 (.1 4 3 ) -D -
1 5 .90 (.6 2 6) 3 .5 5 (.1 4 0 ) 5 .3 0 (.2 0 9 )
1 5 .30 (.6 0 2) 4 .7 0 (.1 8 5 )
0 .25 (.0 1 0) M D B M
-B - -A - 2 .5 0 (.0 8 9)
1 .5 0 (.0 5 9)
5 .5 0 (.2 1 7 ) 4

2 0 .3 0 (.80 0 )
5. 50 (.2 17 ) NOT ES :
1 9 .7 0 (.77 5 ) 2X
4. 50 (.1 77 ) 1 DIME NSIO NING & TO LERAN CING
PE R AN SI Y 14.5M, 1982.
1 2 3 2 CO NTRO LLING DIMENS IO N : IN CH .
3 CO NF ORM S T O JEDE C O UTLINE
-C - T O-247-A C.
1 4.8 0 (.5 8 3 )
4 .3 0 (.1 7 0 )
1 4.2 0 (.5 5 9 )
3 .7 0 (.1 4 5 )

2 .4 0 (.09 4 ) LEAD AS SIGN MENT S


1 .4 0 (.0 56 ) 0 .8 0 (. 03 1 )
2 .0 0 (.07 9 ) 3 X 1 .0 0 (.0 39 ) 3 X 0 .4 0 (. 01 6 ) 1 - G ATE
2X 2 - DRAIN
0 .25 (.0 10 ) M C A S 2.6 0 (.10 2 ) 3 - SO URCE
5 .45 (.2 1 5) 2.2 0 (.08 7 ) 4 - DRAIN
3 .4 0 (.1 3 3 )
2X 3 .0 0 (.1 1 8 )

Part Marking Information


TO-247AC
E X AM PLE : T HI S IS A N IRF 1010
E XAM P LWE IT
: HT HAISS SISE MB
AN LY
IR F PE 30 A A
LO T WCO IT H AS SE M BL Y
DE 9B 1M IN TE R NA T ION A L
IN TE R N A TIO N A L
P AR
P ATRTN UNU
M BM
ERBE R
LOT C ODE 3A 1Q
R EC T IF IER IRIR
FPFE3 0
1010
R E C T IF IE R
LO
L O GGOO 9246
3A 19B
Q 9 31M
02 D A TE C OD E
A SMSBL
A SSE EMY B LY D A TE C O D E
(Y YW W )
L O TLO TC O DCO
E DE (YYW W )
Y Y = YE A R
YY = YE AR
WW W WW EE
= WK E EK

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http://www.irf.com/ Data and specifications subject to change without notice. 8/97