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Preparation
- Clean the substrate with nanostript solution for 10 min, (Or) with piranha solution (H2SO4+H2O2).
- Transfer it DI water for rinsing
- Dry the substrate completely using a spin rinse dryer and hot wafer 200 C for 20 min.
- (Optional) O2 plasma at 300mTorr for 3 min. (If there are difficulties to spread the photoresist over the surface or if during the soft
bake the photoresist makes some hole in the layer.)
Trials: 1st 2nd 3rd 4th 5th 6th 7th 8th 9th
Rate (rpm) 3000
Time (sec) 45
Acceleration(rpm/sec) 300
Trials: 1st 2nd 3rd 4th 5th 6th 7th 8th 9th
Temperature (C) 95
Time (min) 9
Trials: 1st 2nd 3rd 4th 5th 6th 7th 8th 9th
Temperature (C) 65
Time (min) 2
Resulting thickness, height:
PDMS curing
- Mix the PDMS Prepolymer and the curing agent at weight ratio of 10:1.
- Adequately stir the mixture and degas it under a vacuum for 15 min.
- For 80 um thick PDMS layer, dispense 5 ml of PDMS on the wafer.
Trials: 1st 2nd 3rd 4th 5th 6th 7th 8th 9th
Rate (rpm) 1000
Time (sec) 45
Acceleration(rpm/sec) 100
Resulting height:
Soft Baking: Post Baking: